Abstract:
An objective of the present invention is to provide a charged particle beam device with which information based on a charged particle which is discharged from a bottom part of high-aspect structure is revealed more than with previous technology. To achieve the objective, proposed is a charged particle beam device comprising: a first orthogonal electromagnetic field generator which deflects charged particles which are discharged from a material; a second orthogonal electromagnetic field generator which further deflects the charged particles which are deflected by the first orthogonal electromagnetic field generator; an aperture forming member having a charged particle beam pass-through aperture; and a third orthogonal electromagnetic field generator which deflects the charged particles which have passed through the aperture forming member.
Abstract:
A measurement apparatus according to an embodiment includes an electron emission unit and a detection unit that detects a reflection electron reflected by a recessed shape pattern. In addition, the measurement apparatus includes a time measurement unit that measures a response time from when the electron beam is emitted to when the reflection electron is detected. Further, the measurement apparatus includes a bent amount calculation unit that calculates the amount of bent, i.e., a position deviation amount, between an upper surface portion and a bottom surface portion of the recessed shape pattern. The bent amount calculation unit calculates the amount of bent on the basis of a condition for determining the incidence path of the electron beam to the recessed shape pattern, and the response time.
Abstract:
An object of the invention is to provide a charged particle beam apparatus which can perform optimized adjustment of a focusing condition of a charged particle beam focused on a sample and optimized adjustment of an orbit of a charged particle emitted from the sample. In order to achieve the above-described object, there is provided a charged particle beam apparatus including a passage restriction member that partially restricts passage of a charged particle emitted from a sample, a first lens that is arranged between the passage restriction member and the sample, and that controls an orbit of the charged particle emitted from the sample, and a second lens that is arranged between the passage restriction member and the charged particle source, and that changes a focusing condition of the charged particle beam in accordance with a control condition of the first lens.
Abstract:
A charged particle beam device is described. In one aspect, the charged particle beam device includes a charged particle beam source, and a switchable multi-aperture for generating two or more beam bundles from a charged particle beam which includes: two or more aperture openings, wherein each of the two or more aperture openings is provided for generating a corresponding beam bundle of the two or more beam bundles; a beam blanker arrangement configured for individually blanking the two or more beam bundles; and a stopping aperture for blocking beam bundles. The device further includes a control unit configured to control the individual blanking of the two or more beam bundles for switching of the switchable multi-aperture and an objective lens configured for focusing the two or more beam bundles on a specimen or wafer.
Abstract:
Provided is an electron beam scanning method for forming an electric field for appropriately guiding electrons emitted from a pattern to the outside of the pattern, and also provided is a scanning electron microscope. When an electron beam for forming charge is irradiated to a sample, a first electron beam is irradiated to a first position (1) and a second position (2) having the center (104) of a pattern formed on the sample as a symmetrical point, and is then additionally irradiated to two central positions (3, 4) between the first and second irradiation position, the two central positions (3, 4) being on the same radius centered on the symmetrical point as are the first and second positions. Further, after that, the irradiation of the first electron beam to the central positions between existing scanning positions on the radius is repeated.
Abstract:
An electron beam apparatus includes at least one electron beam column. The at least one beam column includes an electron beam optical system to irradiate an electron beam on a surface of a sample, and a detection system to detect electrons generated from the electron beam. The electron beam optical system includes an object lens to focus the electron beam on a surface of the sample. The object lens includes an electrostatic lens having a first electrode to which a first voltage is applied, a second electrode that is grounded, a third electrode to which a second voltage is applied, and a fourth electrode that is grounded. The first through fourth electrodes sequentially arranged relative to the sample.
Abstract:
An apparatus of plural charged particle beams with multi-axis magnetic lens is provided to perform multi-functions of observing a specimen surface, such as high-throughput inspection and high-resolution review of interested features thereof and charge-up control for enhancing image contrast and image resolution. In the apparatus, two or more sub-columns are formed and each of the sub-columns performs one of the multi-functions. Basically the sub-columns take normal illumination to get high image resolutions, but one or more may take oblique illuminations to get high image contrasts.
Abstract:
An object of the invention is to provide a scanning electron microscope which forms an electric field to lift up, highly efficiently, electrons discharged from a hole bottom or the like even if a sample surface is an electrically conductive material. To achieve the above object, according to the invention, a scanning electron microscope including a deflector which deflects a scanning position of an electron beam, and a sample stage for loading a sample thereon, is proposed. The scanning electron microscope includes a control device which controls the deflector or the sample stage in such a way that before scanning a beam on a measurement target pattern, a lower layer pattern situated in a lower layer of the measurement target pattern undergoes beam irradiation on another pattern situated in the lower layer.
Abstract:
An electron beam apparatus includes at least one electron beam column. The at least one beam column includes an electron beam optical system to irradiate an electron beam on a surface of a sample, and a detection system to detect electrons generated from the electron beam. The electron beam optical system includes an object lens to focus the electron beam on a surface of the sample. The object lens includes an electrostatic lens having a first electrode to which a first voltage is applied, a second electrode that is grounded, a third electrode to which a second voltage is applied, and a fourth electrode that is grounded. The first through fourth electrodes sequentially arranged relative to the sample.
Abstract:
The present invention provides a contact hole observation technology for avoiding a situation in which it is difficult to observe a contact hole as a nonuniform charge is formed in the contact hole due to a tilted electron beam during a process for forming a preliminary charge on a sample. The present invention also provides a scanning electron microscope based on such a contact hole observation technology. During a preliminary charge process, an electron beam is allowed to become incident in a plurality of directions to perform a precharge, thereby reducing a region within the contact hole that is not irradiated with the electron beam. This reduces the number of secondary electrons that become lost on the wall surface of the contact hole, thereby making it possible to acquire information about the bottom of the contact hole. Further, the precharge is processed by dividing a precharge irradiation region into a plurality of ring-shaped regions concentric with an observation region and precharging each of the ring-shaped regions in a plurality of scanning directions.