公开(公告)号：US20090124040A1

公开(公告)日：2009-05-14

申请号：US12354745

申请日：2009-01-15

申请人： Daisuke Miura ,  Tomonari Nakayama ,  Toshinobu Ohnishi ,  Makoto Kubota ,  Akane Masumoto ,  Hidetoshi Tsuzuki ,  Makiko Miyachi

发明人： Daisuke Miura ,  Tomonari Nakayama ,  Toshinobu Ohnishi ,  Makoto Kubota ,  Akane Masumoto ,  Hidetoshi Tsuzuki ,  Makiko Miyachi

IPC分类号： H01L51/40

CPC分类号： H01L51/0512 ,  H01L51/0012 ,  H01L51/0077 ,  H01L51/0078 ,  H01L51/0533 ,  H01L51/0545

摘要： There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.

摘要翻译： 提供了具有有机半导体层的场效应晶体管，包括：至少含有卟啉的有机半导体层; 以及由至少聚硅氧烷化合物构成的层，该层层叠在有机半导体层上以与有机半导体层紧密接触。 结果，可以提供能够形成具有高结晶度和高取向性的有机半导体层并具有高迁移率的场效应晶体管。

公开(公告)号：US07491967B2

公开(公告)日：2009-02-17

申请号：US10555614

申请日：2005-03-09

申请人： Daisuke Miura ,  Tomonari Nakayama ,  Toshinobu Ohnishi ,  Makoto Kubota ,  Akane Masumoto ,  Hidetoshi Tsuzuki ,  Makiko Miyachi

发明人： Daisuke Miura ,  Tomonari Nakayama ,  Toshinobu Ohnishi ,  Makoto Kubota ,  Akane Masumoto ,  Hidetoshi Tsuzuki ,  Makiko Miyachi

IPC分类号： H01L51/00 ,  H01L51/05

CPC分类号： H01L51/0512 ,  H01L51/0012 ,  H01L51/0077 ,  H01L51/0078 ,  H01L51/0533 ,  H01L51/0545

摘要： There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.

摘要翻译： 提供了具有有机半导体层的场效应晶体管，包括：至少含有卟啉的有机半导体层; 以及由至少聚硅氧烷化合物构成的层，该层层叠在有机半导体层上以与有机半导体层紧密接触。 结果，可以提供能够形成具有高结晶度和高取向性的有机半导体层并具有高迁移率的场效应晶体管。

公开(公告)号：US07407846B2

公开(公告)日：2008-08-05

申请号：US11672908

申请日：2007-02-08

申请人： Masahiko Ando ,  Masatoshi Wakagi ,  Hiroshi Sasaki

发明人： Masahiko Ando ,  Masatoshi Wakagi ,  Hiroshi Sasaki

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L51/0545 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0012 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/0533

摘要： The present method prevents malfunctions in switching caused by a light leakage current in an active matrix type thin film transistor substrate for a liquid crystal display and prevents display failures, by selectively disposing a self assembled monolayer film in a gate electrode-projected region of the surface of an insulator film with high definition, and by selectively improving the orientation order of an organic semiconductor film only in the gate electrode-projected region without improving the order at an irradiated portion with light outside the gate electrode-projected region.

摘要翻译： 本方法通过在表面的栅极电极投影区域中选择性地配置自组装单层膜来防止由液晶显示器的有源矩阵型薄膜晶体管基板中的漏光电流引起的切换中的故障，并且防止显示故障 具有高清晰度的绝缘体膜，并且仅通过选择性地改善栅极电极投影区域中的有机半导体膜的取向顺序，而不改善栅极电极投影区域外的光的照射部分的阶数。

公开(公告)号：US20080067507A1

公开(公告)日：2008-03-20

申请号：US11901534

申请日：2007-09-17

申请人： Takuji Kato ,  Tamotsu Aruga ,  Daisuke Goto ,  Masafumi Torii ,  Shinji Matsumoto

发明人： Takuji Kato ,  Tamotsu Aruga ,  Daisuke Goto ,  Masafumi Torii ,  Shinji Matsumoto

IPC分类号： H01L51/30

CPC分类号： H01L51/0533 ,  H01L51/0035 ,  H01L51/0038 ,  H01L51/0043 ,  H01L51/0059 ,  H01L51/0545

摘要： An organic thin-film transistor, including a layer exposing a benzene ring, having a surface separation of from 2.8 to 3.0 Å; and an organic semiconductive layer located overlying the layer exposing a benzene ring.

摘要翻译： 一种有机薄膜晶体管，其包括暴露苯环的层，其表面分离为2.8至3.0; 以及位于暴露苯环的层上方的有机半导体层。

公开(公告)号：US20080042129A1

公开(公告)日：2008-02-21

申请号：US11794044

申请日：2005-12-21

申请人： Masatoshi Nakagawa ,  Hiroyuki Hanato ,  Toshihiro Tamura

发明人： Masatoshi Nakagawa ,  Hiroyuki Hanato ,  Toshihiro Tamura

IPC分类号： H01L51/10 ,  H01L51/40

CPC分类号： H01L51/0533 ,  H01L51/0038 ,  H01L51/005 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/0055 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0068 ,  H01L51/0094 ,  H01L51/0545 ,  H01L51/0562

摘要： An organic TFT comprising an organic thin film, a gate electrode formed on one surface of the organic thin film through a gate insulating film, source/drain electrodes formed on both sides of the gate electrode and on one surface of the organic thin film or on the other surface, and a film of an organic silane compound positioned between the organic thin film and the gate insulating film and/or between the organic thin film and the source/drain electrodes.

摘要翻译： 一种有机TFT，包括有机薄膜，通过栅极绝缘膜在有机薄膜的一个表面上形成的栅电极，形成在栅电极的两侧和有机薄膜的一个表面上的源/漏电极， 位于有机薄膜和栅极绝缘膜之间和/或有机薄膜和源极/漏极之间的有机硅烷化合物的膜。

公开(公告)号：US07301183B2

公开(公告)日：2007-11-27

申请号：US11329072

申请日：2006-01-11

申请人： Ali Afzali-Ardakani ,  Christos D. Dimitrakopoulos

发明人： Ali Afzali-Ardakani ,  Christos D. Dimitrakopoulos

IPC分类号： H01L27/148

CPC分类号： H01L51/0068 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0006 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0076 ,  H01L51/0094 ,  H01L51/0533 ,  H01L51/0541 ,  H01L51/0545

摘要： An organic field-effect transistor and a method of making the same include a self-assembled monolayer (SAM) of bifunctional molecules disposed between a pair of electrodes as a channel material. The pair of electrodes and the SAM of bifunctional molecules are formed above an insulating layer, in which each of the bifunctional molecules comprises a functionality at a first end that covalently bonds to the insulating layer, and an end-cap functionality at a second end that includes a conjugated bond. The SAM of bifunctional molecules may be polymerized SAM to form a conjugated polymer strand extending between the pair of electrodes.

摘要翻译： 有机场效应晶体管及其制造方法包括设置在作为沟道材料的一对电极之间的双功能分子的自组装单层（SAM）。 双功能分子的一对电极和SAM形成在绝缘层上方，其中每个双功能分子在第一端包含与绝缘层共价键合的官能团，以及在第二端的端帽功能， 包括共轭键。 双功能分子的SAM可以聚合SAM以形成在该对电极之间延伸的共轭聚合物链。

公开(公告)号：US20070181961A1

公开(公告)日：2007-08-09

申请号：US11642504

申请日：2006-12-20

申请人： Tobin Marks ,  Antonio Facchetti

发明人： Tobin Marks ,  Antonio Facchetti

IPC分类号： B05D1/36 ,  H01L29/94 ,  H01L21/336

CPC分类号： H01L51/0529 ,  B82Y30/00 ,  H01L51/052 ,  H01L51/0533 ,  H01L51/0545 ,  H01L51/0579 ,  Y10T428/31536 ,  Y10T428/31663

摘要： Compositions, methods of using inorganic moieties for dielectric modulation, and related device structures.

摘要翻译： 组合物，使用无机部分进行介电调制的方法以及相关的器件结构。

公开(公告)号：US20070085072A1

公开(公告)日：2007-04-19

申请号：US11513062

申请日：2006-08-31

申请人： Akane Masumoto ,  Shintetsu Go ,  Tomonari Nakayama ,  Toshinobu Ohnishi

发明人： Akane Masumoto ,  Shintetsu Go ,  Tomonari Nakayama ,  Toshinobu Ohnishi

IPC分类号： H01L29/08

CPC分类号： H01L51/0533 ,  H01L21/02126 ,  H01L21/3122 ,  H01L51/0003 ,  H01L51/0027 ,  H01L51/0055 ,  H01L51/0558

摘要： Provided is a method of producing a semiconductor device having an organic semiconductor layer, which includes the steps of providing a crystallization promoting layer on a substrate; providing an organic semiconductor precursor on the crystallization promoting layer; and applying light energy and thermal energy simultaneously to the organic semiconductor precursor to form a layer containing an organic semiconductor. Thereby, an organic semiconductor device is provided which is low cost and has excellent durability.

摘要翻译： 提供一种制造具有有机半导体层的半导体器件的方法，其包括在衬底上提供结晶促进层的步骤; 在结晶促进层上提供有机半导体前体; 以及将光能和热能同时施加到所述有机半导体前体以形成包含有机半导体的层。 由此，提供了低成本，耐久性优异的有机半导体装置。

公开(公告)号：US20060131561A1

公开(公告)日：2006-06-22

申请号：US10545361

申请日：2004-02-17

申请人： Katsura Hirai ,  Hiroshi Kita ,  Hiroaki Arita

发明人： Katsura Hirai ,  Hiroshi Kita ,  Hiroaki Arita

IPC分类号： H01L29/08

CPC分类号： C23C16/30 ,  H01L51/0002 ,  H01L51/0005 ,  H01L51/0533 ,  H01L51/0541 ,  H01L51/0545

摘要： It is an object of the present invention to provide an organic thin-film transistor exhibiting high carrier mobility and a manufacturing method thereof. Disclosed is an organic thin-film transistor prossessing a film having a contact angle against pure water of a surface of not less than 50°, wherein an organic semiconductor layer is formed on the film prepared by a CVD (chemical vapor deposition) method employing a reactive gas.

摘要翻译： 本发明的目的是提供一种显示高载流子迁移率的有机薄膜晶体管及其制造方法。 公开了一种有机薄膜晶体管，其考虑与表面的纯水接触角不小于50°的膜，其中在通过CVD（化学气相沉积）方法制备的膜上形成有机半导体层， 反应气体。

公开(公告)号：US07029945B2

公开(公告)日：2006-04-18

申请号：US10499040

申请日：2002-11-21

申请人： Janos Veres ,  Simon Dominic Ogier ,  Soad Mohialdin-Khaffaf ,  Stephen William Leeming

发明人： Janos Veres ,  Simon Dominic Ogier ,  Soad Mohialdin-Khaffaf ,  Stephen William Leeming

IPC分类号： H01L35/24 ,  H01L51/00

CPC分类号： H01L51/052 ,  C08G2261/11 ,  C08G2261/12 ,  C08G2261/3142 ,  C08G2261/3162 ,  C08G2261/3223 ,  C08G2261/92 ,  C09B57/008 ,  C09B69/109 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02282 ,  H01L21/312 ,  H01L21/3127 ,  H01L28/56 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0052 ,  H01L51/0059 ,  H01L51/0533 ,  H01L51/0541 ,  H01L51/0545

摘要： A process of manufacturing an organic field effect device is provided comprising the steps of (a) depositing from a solution an organic semiconductor layer; and (b) depositing from a solution a layer of low permittivity insulating material forming at least a part of a gate insulator, such that the low permittivity insulating material is in contact with the organic semiconductor layer, wherein the low permittivity insulating material is of relative permittivity from 1.1 to below 3.0. In addition, an organic field effect device manufactured by the process is provided.

摘要翻译： 提供一种制造有机场效应器件的方法，包括以下步骤：（a）从溶液中沉积有机半导体层; 和（b）从溶液沉积形成栅极绝缘体的至少一部分的低介电常数绝缘材料层，使得低介电常数绝缘材料与有机半导体层接触，其中低介电常数绝缘材料是相对的 介电常数从1.1到3.0。 此外，提供了通过该方法制造的有机场效应器件。