Abstract:
A high-frequency transmission device includes first and second resonators as ring-shaped wires each having an opening part at a part thereof, first and second input/output terminals each electrically connected to both resonators, a first ground shield formed on a plane different from planes on which both resonators are arranged, a second ground shield formed on a plane different from the planes on which both resonators and the first ground shield are arranged, and first and second ground wires each formed to surround peripheries of both resonators. The ground shields and the ground wires are respectively connected to each other. A dielectric wire is present between both ground wires, and the ground wires are not electrically connected to each other.
Abstract:
According to various aspects, exemplary embodiments are disclosed of thermal interface materials including electrically-conductive material, shields including thermal interface materials, and related methods. In an exemplary embodiment, a thermal interface material generally includes a top surface, a bottom surface, and one or more outer side surfaces extending between the top and bottom surfaces. Electrically-conductive material is along and/or adjacent the one or more outer side surfaces. The thermal interface material may be configured to be operable as a waveguide through which energy below a cutoff frequency cannot flow. The electrically-conductive material may be parallel with a direction of heat flow from a heat source to a heat removal/dissipation structure when the bottom surface is positioned against or adjacent the heat source and the top surface is positioned adjacent or against the heat removal/dissipation structure.
Abstract:
A flip-chip employing an integrated cavity filter is disclosed comprising an integrated circuit (IC) chip comprising a semiconductor die and a plurality of conductive bumps. The plurality of conductive bumps is interconnected to at least one metal layer of the semiconductor die to provide a conductive “fence” that defines an interior resonator cavity for providing an integrated cavity filter in the flip-chip. The interior resonator cavity is configured to receive an input RF signal from an input transmission line through an input signal transmission aperture provided in an internal layer in the semiconductor die. The interior resonator cavity resonates the input RF signal to generate the output RF signal comprising a filtered RF signal of the input RF signal, and couples the output RF signal on an output signal transmission line in the flip-chip through an output transmission aperture provided in the aperture layer.
Abstract:
Dielectric waveguide comprising a plurality of resonator groups disposed on a substrate, wherein each of the resonator groups comprises one or more integrally-formed resonators, each obtained by coating a dielectric body with a conductor film, wherein each resonator group in at least a set of resonator groups of the plurality of resonator groups comprises waveguide-side slot exposing the dielectric body in a bottom surface thereof, wherein the substrate comprises a cavity surrounded by conductor patterns formed in the upper and lower surfaces, and by a via hole connecting the conductor patterns in the upper and lower surfaces, wherein the cavity comprises a set of substrate-side slots exposing the core material, the set of substrate-side slots being provided at a position to which waveguide-side slots of the set of resonator groups are opposed, and wherein resonator groups in the set of resonator groups are coupled together via the cavity.
Abstract:
A bandpass filter has a combline structure having a plurality of cascaded nodes. A plurality of nodes in the filter are connected both to resonant elements (a.k.a. resonators) and non-resonant elements (including elements having inductances and/or capacitances that do not resonate in a predetermined frequency band of interest). The resonant frequencies of the resonant elements may be adjusted, in order to adjust the location of the center frequency and/or the width of the passband of the filter. The characteristics of the resonant and non-resonant elements are selected such that the poles of the filter, when plotted on the complex plane, move substantially along the imaginary axis when the resonant frequencies are adjusted, without substantial movement along the real axis. The resulting bandpass filter has substantially constant losses and substantially constant absolute selectivity over a relatively wide range of bandwidths.
Abstract:
A flip-chip employing an integrated cavity filter is disclosed comprising an integrated circuit (IC) chip comprising a semiconductor die and a plurality of conductive bumps. The plurality of conductive bumps is interconnected to at least one metal layer of the semiconductor die to provide a conductive “fence” that defines an interior resonator cavity for providing an integrated cavity filter in the flip-chip. The interior resonator cavity is configured to receive an input RF signal from an input transmission line through an input signal transmission aperture provided in an internal layer in the semiconductor die. The interior resonator cavity resonates the input RF signal to generate the output RF signal comprising a filtered RF signal of the input RF signal, and couples the output RF signal on an output signal transmission line in the flip-chip through an output transmission aperture provided in the aperture layer.
Abstract:
In an end surface 32b of the second transmission line forming body 32 forming a second waveguide 30, the height of a central region 33 which includes an opening of the second transmission line 30b is a reference plane. A depressed portion 32e that is depressed to a depth greater than the length of a thread portion of a screw 205 from the reference plane is provided in a region outside the central region 33 and includes a screw hole forming position. A screw hole 32d for fixing an external circuit 200 to be connected is provided at the screw hole forming position in the depressed portion 32e. The height of a region, which is excluding the depressed portion 32e and is further away from the central region 33 than the screw hole forming position, is equal to the reference plane.
Abstract:
A multi-mode filter for realizing wide-band is disclosed. The multi-mode filter includes a housing; a plurality of cavities formed in the housing; a plurality of resonators located in each of the cavities; at least one connector formed through a side wall of the housing; and at least one coupling element connected to the at least one connector in the cavities, the at least one coupling element coupling the at least one connector with at least one of the resonators respectively, wherein each of the at least one coupling element has “T” shape in view of front section and “L” shape in view of side section.
Abstract:
A high-frequency module includes a semiconductor chip device that is mounted on an external circuit substrate by wire bonding. A switch forming section, a power amplifier forming section and a low noise amplifier forming section, realized by a group of FETs, which are active elements, are formed in the semiconductor chip device. Flat plate electrodes, which form capacitors are formed in the semiconductor chip device. Conductor wires that connect the external circuit substrate and the semiconductor chip device function as inductors. A group of passive elements that includes inductors and capacitors is formed. As a result, a high-frequency module that can be reduced in size while still obtaining the required transmission characteristic is realized.
Abstract:
A Yttrium Iron Garnet (YIG) tuned band reject filter using one or more Shunt YIG resonators provides for much wider minimum rejection bandwidths without increasing maximum 3 db bandwidths or spurious response. Various configurations of a tunable shunt YIG tuned band reject filter achieves a wide rejection bandwidth at the low end of the tuning range while keeping the maximum 3 db bandwidth, normally occurring at the high end of the tuning range, to a minimum.