公开(公告)号：US20060231850A1

公开(公告)日：2006-10-19

申请号：US11350936

申请日：2006-02-10

申请人： Tan Sakong ,  Tae-hoon Jang ,  Joong-kon Son ,  Han-youl Ryu

发明人： Tan Sakong ,  Tae-hoon Jang ,  Joong-kon Son ,  Han-youl Ryu

IPC分类号： H01L33/00

CPC分类号： H01S5/2231 ,  H01S5/0422 ,  H01S5/221 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/32341 ,  H01S2304/04

摘要： Provided is a semiconductor laser diode having a ridge portion and a method of manufacturing the semiconductor laser diode. The semiconductor laser diode includes: a first clad layer, an active layer formed on the first clad layer, a second clad layer formed on the active layer and having a stripe shaped ridge portion; and a buried layer formed of AlGaInN and grown on the second clad layer except for a region of an upper surface of the ridge portion.

摘要翻译： 提供了具有脊部分的半导体激光二极管和制造半导体激光二极管的方法。 半导体激光二极管包括：第一覆盖层，形成在第一覆盖层上的有源层，形成在有源层上并具有条形脊部分的第二覆盖层; 以及由AlGaInN形成的埋层，并且在除了所述脊部的上表面的区域之外的所述第二包覆层上生长。

公开(公告)号：US07087449B2

公开(公告)日：2006-08-08

申请号：US10875418

申请日：2004-06-24

申请人： Fred A. Kish, Jr. ,  Sheila K. Mathis ,  Charles H. Joyner ,  Richard P. Schneider

发明人： Fred A. Kish, Jr. ,  Sheila K. Mathis ,  Charles H. Joyner ,  Richard P. Schneider

IPC分类号： H01L21/20

CPC分类号： B82Y20/00 ,  H01L31/03046 ,  H01L31/109 ,  H01L33/145 ,  H01S5/026 ,  H01S5/2072 ,  H01S5/221 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/2231 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/3072 ,  H01S5/34306 ,  Y02E10/544

摘要： An active semiconductor device, such as, buried heterostructure semiconductor lasers, LEDs, modulators, photodiodes, heterojunction bipolar transistors, field effect transistors or other active devices, comprise a plurality of semiconductor layers formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III–V compound, i.e., an Al-III–V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III–V layer. An example of a material system for this invention useful at optical telecommunication wavelengths is InGaAsP/InP where the Al-III–V layer comprises InAlAs:O or InAlAs:O:Fe. Other materials for the blocking layers may be InAlGaAs or alternating layers or alternating monolayers of AlAs/InAs. Thus, the O-doped blocking layers may be undoped, impurity doped or co-doped with Fe.

公开(公告)号：US07003008B2

公开(公告)日：2006-02-21

申请号：US11074273

申请日：2005-03-07

申请人： Hiroshi Yoshida ,  Misuzu Abe ,  Maho Ohara ,  Takashi Yamaguchi ,  Hiroshi Nakajima

发明人： Hiroshi Yoshida ,  Misuzu Abe ,  Maho Ohara ,  Takashi Yamaguchi ,  Hiroshi Nakajima

IPC分类号： H01S5/00

CPC分类号： H01S5/32341 ,  H01S5/221 ,  H01S5/2218 ,  H01S5/2231

摘要： Disclosed is a semiconductor laser light emitting device including: a stacked film composed of a stack of group III nitride semiconductor films each containing at least one kind selected from aluminum, gallium, indium, and boron; wherein an upper portion of the stacked film is formed into a ridge-like stripe, to form a current injection region; a current non-injection region formed on both sides of the ridge-like stripe; and at least part of the current non-injection region is made from a material expressed by a chemical formula AlxGa1−xN (0≦x≦1.0). In this device, the component ratio “x” of Al is specified at a value in a range of 0.3≦x≦1.0, so that the semiconductor laser light emitting device is configured as an index guide type semiconductor laser light emitting device; the component ratio “x” of Al is specified at a value in a range of 0.15

摘要翻译： 公开了一种半导体激光发光装置，其包括：由包含选自铝，镓，铟和硼中的至少一种的III族氮化物半导体膜的堆叠构成的层叠膜; 其中所述层叠膜的上部形成为脊状条纹，以形成电流注入区域; 形成在脊状条纹的两侧的电流非注入区域; 并且当前非注入区域的至少一部分由化学式Al x 1 Ga x-x N表示的材料制成（0≤x≤1.0 ）。 在该器件中，Al的分量比“x”被指定为0.3 <= x <= 1.0的范围内的值，使得半导体激光发光器件被配置为引导型半导体激光发光器件; Al的分量比“x”被规定在0.15

公开(公告)号：US20050201440A1

公开(公告)日：2005-09-15

申请号：US11077126

申请日：2005-03-11

申请人： Hideki Asano

发明人： Hideki Asano

IPC分类号： H01S5/227 ,  H01S5/00 ,  H01S5/10 ,  H01S5/20 ,  H01S5/22 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343

CPC分类号： H01S5/227 ,  B82Y20/00 ,  H01S5/0287 ,  H01S5/1039 ,  H01S5/2086 ,  H01S5/221 ,  H01S5/2222 ,  H01S5/3211 ,  H01S5/3403 ,  H01S5/34313

摘要： In a semiconductor laser element, a lower cladding layer, a lower optical waveguide layer, an InGaAs compressive-strain quantum-well active layer, an upper optical waveguide layer, and an upper cladding layer are formed in this order in a stripe-shaped region on a substrate. A current-blocking layer is formed on both sides of the compressive-strain quantum-well active layer so that the compressive-strain quantum-well active layer is sandwiched between two portions of the current-blocking layer, and trenches extending along the direction of the laser resonator are formed through the current-blocking layer. Instead of providing the trenches, the widths of the layers formed above the substrate are reduced so as to form a ridge structure.

摘要翻译： 在半导体激光元件中，依次形成下包层，下光波导层，InGaAs压应变量子阱有源层，上光波导层和上包覆层，条纹区域 在基板上。 在压应变量子阱有源层的两侧形成电流阻挡层，使得压电应变量子阱有源层夹在电流阻挡层的两个部分之间，并且沟槽沿着 激光谐振器通过电流阻挡层形成。 代替提供沟槽，形成在衬底上方的层的宽度被减小以形成脊状结构。

公开(公告)号：US06909733B2

公开(公告)日：2005-06-21

申请号：US09968942

申请日：2001-10-03

申请人： Katsuya Samonji ,  Toru Takayama ,  Osamu Imafuji ,  Masaaki Yuri

发明人： Katsuya Samonji ,  Toru Takayama ,  Osamu Imafuji ,  Masaaki Yuri

IPC分类号： H01S5/30 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/00

CPC分类号： H01S5/32308 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2206 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/3213

摘要： A semiconductor laser device comprises, on top of an active layer, an n-type cladding layer of Alx1Ga1−x1As and a p-type cladding layer of (AlxGa1−x)yIn1−yP for defining a barrier height. The p-type cladding layer for defining a barrier height contains more component elements than the n-type cladding layer. The potential difference between the conduction band edges of the p-type cladding layer for defining a barrier height and the active layer is greater than the potential difference between the conduction band edges of the n-type cladding layer and the active layer. The carriers in the active layer are prevented from overflowing into the p-type cladding layer and a material having a high thermal conductivity is used for the n-type cladding layer to prevent the phenomenon of thermal saturation, thereby providing improved optical output.

摘要翻译： 半导体激光器件包括在有源层的顶部上形成具有Al x 1 Ga 1-x As As的n型包覆层和（ 用于限定势垒高度的第1 -Y-P层中的至少一个。 用于限定势垒高度的p型包覆层包含比n型包覆层更多的组成元素。 用于限定势垒高度的p型覆层的导带边缘与有源层之间的电位差大于n型覆层和有源层的导带边缘之间的电位差。 有源层中的载流子被阻止溢出到p型包覆层中，并且具有高导热性的材料用于n型包覆层以防止热饱和现象，从而提供改善的光输出。

公开(公告)号：US20040235213A1

公开(公告)日：2004-11-25

申请号：US10875418

申请日：2004-06-24

发明人： Fred A. Kish JR. ,  Sheila K. Mathis ,  Charles H. Joyner ,  Richard P. Schneider

IPC分类号： H01L021/00

CPC分类号： B82Y20/00 ,  H01L31/03046 ,  H01L31/109 ,  H01L33/145 ,  H01S5/026 ,  H01S5/2072 ,  H01S5/221 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/2231 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/3072 ,  H01S5/34306 ,  Y02E10/544

摘要： An active semiconductor device, such as, buried heterostructure semiconductor lasers, LEDs, modulators, photodiodes, heterojunction bipolar transistors, field effect transistors or other active devices, comprise a plurality of semiconductor layers formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer. An example of a material system for this invention useful at optical telecommunication wavelengths is InGaAsP/InP where the Al-III-V layer comprises InAlAs:O or InAlAs:O:Fe. Other materials for the blocking layers may be InAlGaAs or alternating layers or alternating monolayers of AlAs/InAs. Thus, the O-doped blocking layers may be undoped, impurity doped or co-doped with Fe.

摘要翻译： 诸如掩埋异质结构半导体激光器，LED，调制器，光电二极管，异质结双极晶体管，场效应晶体管或其它有源器件的有源半导体器件包括形成在衬底上的多个半导体层，其中一层是有源区 。 通过由形成在指定的有源区通道的相邻侧上的电流阻挡层限定的有源区形成电流通道，其中阻挡层基本上限制电流通过通道。 阻挡层的特征在于含有铝的III-V族化合物，即有意从氧化物源掺杂氧的Al-III-V层。 此外，湿氧化物工艺或沉积的氧化物源可用于横向形成Al-III-V层的天然氧化物。 在光通信波长下用于本发明的材料系统的一个例子是InGaAsP / InP，其中Al-III-V层包括InAlAs：O或InAlAs：O：Fe。 用于阻挡层的其它材料可以是AlAlGaAs或AlAs / InAs的交替层或交替单层。 因此，O掺杂阻挡层可以是未掺杂的，杂质掺杂的或与Fe共掺杂的。

公开(公告)号：US20040184501A1

公开(公告)日：2004-09-23

申请号：US10796704

申请日：2004-03-09

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Toru Takayama

IPC分类号： H01S005/00

CPC分类号： H01S5/2231 ,  G11B7/123 ,  H01S5/02248 ,  H01S5/02292 ,  H01S5/0421 ,  H01S5/1014 ,  H01S5/162 ,  H01S5/2201 ,  H01S5/221

摘要： A semiconductor laser device is provided, in which an optical axis of a far-field pattern (FFP) is stabilized and which is capable of oscillating in a fundamental transverse mode up to a high output. An optical pickup apparatus also is provided, in which an optical axis of an FFP is stabilized and which is capable of being operated in fundamental transverse mode oscillation up to a high output. A semiconductor laser device is formed on a tilted substrate composed of a compound semiconductor, and includes an active layer and two cladding layers interposing the active layer therebetween. One of the cladding layers forms a mesa-shaped ridge. The ridge includes a first region where a width of a bottom portion of the ridge is substantially constant and a second region where the width of the bottom portion of the ridge is varied continuously. The second region is placed between the first region and an end face in an optical path.

摘要翻译： 提供一种半导体激光器件，其中远场图案（FFP）的光轴被稳定并且能够以基本横向模式振荡到高输出。 还提供了一种光拾取装置，其中FFP的光轴是稳定的，并且能够在基本横向模式振荡下操作，直到高输出。 半导体激光装置形成在由化合物半导体构成的倾斜基板上，并且包括有源层和在其间插入有源层的两个包覆层。 包层之一形成台面状的脊。 脊包括脊的底部的宽度基本上恒定的第一区域和脊的底部的宽度连续变化的第二区域。 第二区域被放置在光路中的第一区域和端面之间。

公开(公告)号：US20020051475A1

公开(公告)日：2002-05-02

申请号：US09828218

申请日：2001-04-09

发明人： Motoharu Miyashita ,  Motoko Sasaki ,  Ken-Ichi Ono

IPC分类号： H01S005/00

CPC分类号： H01S5/2202 ,  H01S5/221 ,  H01S5/2218 ,  H01S5/2231 ,  H01S5/32325

摘要： To provide a semiconductor laser device exhibiting a reduced threshold current with less deterioration in temperature properties in current-optical output performance and excellent beam properties, in the semiconductor laser device according to the present invention, a current blocking layer 22 made of n-AlInP having a stripe-shaped opening 24 is disposed on a first upper clad layer 20, the first upper clad layer 20 and the current blocking layer 22 facing the opening 24 respectively are covered by a buffer layer 26 made of p-Al0.5Ga0.5As and a second upper clad layer 28 made of p-(Al0.7Ga0.3)0.5In0.5P is disposed via the buffer layer 26, to prevent lattice defect formation in the crystal layer grown on the surface of the current blocking layer 22 facing the opening 24.

摘要翻译： 在本发明的半导体激光装置中，为了提供一种半导体激光装置，具有降低的阈值电流，电流 - 光输出性能和优异的光束特性的温度特性降低较少，所以由n-AlInP制成的电流阻挡层22具有 在第一上包覆层20上设置条形开口24，分别由第一上覆层20和与开口24相对的电流阻挡层22被由p-Al0.5Ga0.5As构成的缓冲层26覆盖， 通过缓冲层26设置由p-（Al0.7Ga0.3）0.5In0.5P制成的第二上包覆层28，以防止在电流阻挡层22的表面上生长的晶体层中的晶格缺陷形成 开24。

公开(公告)号：US20020044583A1

公开(公告)日：2002-04-18

申请号：US09968942

申请日：2001-10-03

发明人： Katsuya Samonji ,  Toru Takayama ,  Osamu Imafuji ,  Masaaki Yuri

IPC分类号： H01S005/00

CPC分类号： H01S5/32308 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2206 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/3213

摘要： A semiconductor laser device comprises, on top of an active layer, an n-type cladding layer of Alx1Ga1nullx1As and a p-type cladding layer of (AlxGa1nullx)yIn1nullyP for defining a barrier height. The p-type cladding layer for defining a barrier height contains more component elements than the n-type cladding layer. The potential difference between the conduction band edges of the p-type cladding layer for defining a barrier height and the active layer is greater than the potential difference between the conduction band edges of the n-type cladding layer and the active layer. The carriers in the active layer are prevented from overflowing into the p-type cladding layer and a material having a high thermal conductivity is used for the n-type cladding layer to prevent the phenomenon of thermal saturation, thereby providing improved optical output.

摘要翻译： 半导体激光器件在有源层的顶部包括Al x Ga 1-x As的n型包覆层和用于限定势垒高度的（Al x Ga 1-x）y In 1-y P的p型包覆层。 用于限定势垒高度的p型包覆层包含比n型包覆层更多的组成元素。 用于限定势垒高度的p型覆层的导带边缘与有源层之间的电位差大于n型覆层和有源层的导带边缘之间的电位差。 有源层中的载流子被阻止溢出到p型包覆层中，并且具有高导热性的材料用于n型包覆层以防止热饱和现象，从而提供改善的光输出。

公开(公告)号：US06274891B1

公开(公告)日：2001-08-14

申请号：US09392459

申请日：1999-09-09

申请人： Haruo Tanaka ,  Yukio Shakuda

发明人： Haruo Tanaka ,  Yukio Shakuda

IPC分类号： H01L3300

CPC分类号： H01S5/32325 ,  H01S5/026 ,  H01S5/0267 ,  H01S5/042 ,  H01S5/0654 ,  H01S5/0683 ,  H01S5/1064 ,  H01S5/1085 ,  H01S5/18 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/221 ,  H01S5/2219 ,  H01S5/2231 ,  H01S5/32341

摘要： In a semiconductor laser which uses a semiconductor of GaN type compound, an optimism material is used for a current blocking layer, so that it is made possible to obtain a semiconductor laser that satisfies a gain guiding structure of high light emitting efficiency or a refractive index guiding structure or both, thereby facilitating control of the noise of oscillated light (reduction of noise), control of the spread of light in lateral direction, and control of the longitudinal mode.

摘要翻译： 在使用GaN型化合物的半导体的半导体激光器中，使用乐观材料作为电流阻挡层，从而可以获得满足高发光效率或折射率的增益导引结构的半导体激光器 引导结构或两者，从而有助于控制振荡光的噪声（降低噪声），控制光在横向方向的扩展以及纵向模式的控制。