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    Semiconductor laser device
    1.
    发明授权
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号：US06909733B2

    公开(公告)日：2005-06-21

    申请号：US09968942

    申请日：2001-10-03

    申请人： Katsuya Samonji ,  Toru Takayama ,  Osamu Imafuji ,  Masaaki Yuri

    发明人： Katsuya Samonji ,  Toru Takayama ,  Osamu Imafuji ,  Masaaki Yuri

    IPC分类号： H01S5/30 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/00

    CPC分类号： H01S5/32308 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2206 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/3213

    摘要： A semiconductor laser device comprises, on top of an active layer, an n-type cladding layer of Alx1Ga1−x1As and a p-type cladding layer of (AlxGa1−x)yIn1−yP for defining a barrier height. The p-type cladding layer for defining a barrier height contains more component elements than the n-type cladding layer. The potential difference between the conduction band edges of the p-type cladding layer for defining a barrier height and the active layer is greater than the potential difference between the conduction band edges of the n-type cladding layer and the active layer. The carriers in the active layer are prevented from overflowing into the p-type cladding layer and a material having a high thermal conductivity is used for the n-type cladding layer to prevent the phenomenon of thermal saturation, thereby providing improved optical output.

    摘要翻译： 半导体激光器件包括在有源层的顶部上形成具有Al x 1 Ga 1-x As As的n型包覆层和（ 用于限定势垒高度的第1 -Y-P层中的至少一个。 用于限定势垒高度的p型包覆层包含比n型包覆层更多的组成元素。 用于限定势垒高度的p型覆层的导带边缘与有源层之间的电位差大于n型覆层和有源层的导带边缘之间的电位差。 有源层中的载流子被阻止溢出到p型包覆层中，并且具有高导热性的材料用于n型包覆层以防止热饱和现象，从而提供改善的光输出。

    Semiconductor laser device for use as a light source of an optical disk or the like
    2.
    发明授权
    Semiconductor laser device for use as a light source of an optical disk or the like 失效
    用作光盘等的光源的半导体激光装置

    公开(公告)号：US5751756A

    公开(公告)日：1998-05-12

    申请号：US707566

    申请日：1996-09-04

    申请人： Toru Takayama ,  Osamu Imafuji ,  Masaaki Yuri ,  Masahiro Kume ,  Akio Yoshikawa

    发明人： Toru Takayama ,  Osamu Imafuji ,  Masaaki Yuri ,  Masahiro Kume ,  Akio Yoshikawa

    IPC分类号： H01S5/20 ,  H01S5/223 ,  H01S3/19

    CPC分类号： H01S5/20 ,  H01S5/2231 ,  H01S5/2004 ,  H01S5/205

    摘要： A buffer layer composed of an n-type semiconductor layer, a cladding layer composed of an n-type semiconductor layer, and an active layer are formed sequentially on an n-type semiconductor substrate. On the active layer, there are formed a first optical guiding layer composed of a p-type semiconductor layer including a loss varying layer composed of a p-type semiconductor layer having a bandgap smaller than that of the active layer and a second optical guiding layer composed of a p-type semiconductor layer in this order. On the second optical guiding layer, there is formed a third optical guiding layer composed of a p-type semiconductor layer extending in a stripe. On both sides of the third optical guiding layer on the second optical guiding layer, there are formed current blocking layers which become transparent to a lasing light generated in the active layer composed of the n-type semiconductor layer.

    摘要翻译： 在n型半导体衬底上依次形成由n型半导体层，由n型半导体层构成的覆层和有源层构成的缓冲层。 在有源层上形成有由p型半导体层构成的第一光导层，该p型半导体层包括由具有小于有源层的带隙的p型半导体层构成的损耗变化层和第二光导层 由p型半导体层构成。 在第二光导层上形成由条带延伸的p型半导体层构成的第三光导层。 在第二导光层上的第三光导层的两侧形成有对由在n型半导体层构成的有源层中产生的激光产生透明的电流阻挡层。

    Semiconductor laser
    3.
    发明授权
    Semiconductor laser 有权
    半导体激光器

    公开(公告)号：US07301979B2

    公开(公告)日：2007-11-27

    申请号：US10825407

    申请日：2004-04-14

    申请人： Keiji Ito ,  Isao Kidoguchi ,  Toru Takayama ,  Osamu Imafuji

    发明人： Keiji Ito ,  Isao Kidoguchi ,  Toru Takayama ,  Osamu Imafuji

    IPC分类号： H01S5/00

    CPC分类号： B82Y20/00 ,  H01S5/028 ,  H01S5/0655 ,  H01S5/1014 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2301/18 ,  H01S2304/04

    摘要： A semiconductor laser device of the present invention includes: a first conductivity type cladding layer; an active layer; and a second conductivity type cladding layer, which are on a substrate. The semiconductor laser device further includes a stripe structure for injecting carriers therein. A width of the stripe is wider at a front end face of a resonator from which laser light is emitted than at a rear end face that is located on an opposite side of the front end face, and a reflectance of the front end face is lower than a reflectance of the rear end face. With this configuration, the injection of carriers into an active layer can be controlled in accordance with an optical intensity distribution along the resonator direction within the semiconductor laser, thus achieving a decrease in threshold current, an enhancement of a slope efficiency and an enhancement of a kink level. As a result, the semiconductor laser device can be provided so that stable laser oscillation in the fundamental transverse mode can be realized up to the time of a high optical output operation.

    摘要翻译： 本发明的半导体激光器件包括：第一导电型包覆层; 活性层 和第二导电型包覆层。 半导体激光装置还包括用于在其中注入载体的条纹结构。 在发射激光的谐振器的前端面上的宽度比位于前端面相对侧的后端面宽，并且前端面的反射率较低 比后端面的反射率高。 利用这种配置，可以根据沿着半导体激光器内的谐振器方向的光强度分布来控制载流子进入有源层，从而实现阈值电流的降低，斜率效率的提高和 扭结水平 结果，可以提供半导体激光器件，使得可以在高光输出操作时实现在基本横向模式下的稳定的激光振荡。

    Steel for steel tube with excellent sulfide stress cracking resistance
    6.
    发明授权
    Steel for steel tube with excellent sulfide stress cracking resistance 有权
    钢管用于钢管，具有优良的耐硫化物应力开裂性能

    公开(公告)号：US09175371B2

    公开(公告)日：2015-11-03

    申请号：US13702763

    申请日：2011-05-25

    申请人： Mitsuhiro Numata ,  Tomohiko Omura ,  Masayuki Morimoto ,  Toru Takayama ,  Atsushi Soma

    发明人： Mitsuhiro Numata ,  Tomohiko Omura ,  Masayuki Morimoto ,  Toru Takayama ,  Atsushi Soma

    IPC分类号： C22C38/28 ,  C22C38/22 ,  C22C38/32 ,  C22C38/00 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/24 ,  C22C38/26 ,  C21D8/02

    CPC分类号： C22C38/32 ,  C21D8/0247 ,  C22C38/001 ,  C22C38/002 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/22 ,  C22C38/24 ,  C22C38/26 ,  C22C38/28

    摘要： The present invention provides a steel which simultaneously satisfies a plurality of characteristics, specifically, a steel for tubes with excellent sulfide stress cracking resistance, including, C: 0.2 to 0.7%; Si: 0.01 to 0.8%; Mn: 0.1 to 1.5%; S: not more than 0.005%; P: not more than 0.03%; Al: 0.0005 to 0.1%; Ti: 0.005 to 0.05%; Ca: 0.0004 to 0.005%; N: not more than 0.007%; Cr: 0.1 to 1.5%; and Mo: 0.2 to 1.0%; the balance being Fe, Mg and impurities, being characterized in that: the content of Mg is not less than 1.0 ppm and not more than 5.0 ppm; and inclusions of not less than 50% of the total number of those in steel have such a morphology that Mg—Al—O-based oxides exist at the central part of the inclusion, Ca—Al-based oxides enclose the Mg—Al—O-based oxides, and Ti-containing-carbonitrides further exist on a periphery of the Ca—Al-based oxides.

    摘要翻译： 本发明提供一种同时满足多种特性的钢，具体地说，具有优异的耐硫化物应力开裂性的钢，其包括C：0.2〜0.7％， Si：0.01〜0.8％ Mn：0.1〜1.5％ S：不超过0.005％; P：不大于0.03％; Al：0.0005〜0.1％ Ti：0.005〜0.05％ Ca：0.0004〜0.005％ N：不大于0.007％; Cr：0.1〜1.5％ 和Mo：0.2〜1.0％ 余量为Fe，Mg和杂质，其特征在于：Mg的含量不小于1.0ppm且不大于5.0ppm; 并且不少于钢总数的50％的夹杂物具有在夹杂物的中心部存在Mg-Al-O系氧化物的形态，Ca-Al系氧化物包围Mg-Al- O型氧化物和含Ti的碳氮化物进一步存在于Ca-Al系氧化物的周围。

    Method for manufacturing semiconductor device including layer containing yttria-stabilized zirconia
    7.
    发明授权
    Method for manufacturing semiconductor device including layer containing yttria-stabilized zirconia 有权
    包含氧化钇稳定氧化锆层的半导体器件的制造方法

    公开(公告)号：US08951849B2

    公开(公告)日：2015-02-10

    申请号：US13050002

    申请日：2011-03-17

    申请人： Toru Takayama ,  Kengo Akimoto

    发明人： Toru Takayama ,  Kengo Akimoto

    IPC分类号： H01L35/24 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/3205 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786 ,  H01L29/417

    CPC分类号： H01L21/3105 ,  H01L21/31604 ,  H01L21/32055 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

    摘要： An object is to provide a semiconductor device including a microcrystalline semiconductor film with favorable quality and a method for manufacturing the semiconductor device. In a thin film transistor formed using a microcrystalline semiconductor film, yttria-stabilized zirconia having a fluorite structure is formed in the uppermost layer of a gate insulating film in order to improve quality of a microcrystalline semiconductor film to be formed in the initial stage of deposition. The microcrystalline semiconductor film is deposited on the yttria-stabilized zirconia, so that the microcrystalline semiconductor film around an interface with a base particularly has favorable crystallinity while by crystallinity of the base.

    摘要翻译： 目的在于提供一种具有质量好的微晶半导体膜的半导体装置及其制造方法。 在使用微晶半导体膜形成的薄膜晶体管中，在栅极绝缘膜的最上层形成具有萤石结构的氧化钇稳定的氧化锆，以提高在初始沉积时形成的微晶半导体膜的质量 。 微晶半导体膜沉积在氧化钇稳定的氧化锆上，使得与碱的界面周围的微晶半导体膜特别具有良好的结晶度，同时通过碱的结晶度。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08841664B2

    公开(公告)日：2014-09-23

    申请号：US13404516

    申请日：2012-02-24

    申请人： Hitomi Sato ,  Takayuki Saito ,  Kosei Noda ,  Toru Takayama

    发明人： Hitomi Sato ,  Takayuki Saito ,  Kosei Noda ,  Toru Takayama

    IPC分类号： H01L29/10 ,  H01L29/786 ,  H01L27/108 ,  H01L29/49 ,  H01L27/115

    CPC分类号： H01L29/7869 ,  H01L27/10873 ,  H01L27/1156 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78606

    摘要： Provided is a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which a semiconductor film whose threshold voltage is difficult to control is used as an active layer. By using a silicon oxide film having a negative fixed charge as a film in contact with the active layer of the transistor or a film in the vicinity of the active layer, a negative electric field is always applied to the active layer due to the negative fixed charge and the threshold voltage of the transistor can be shifted in the positive direction. Thus, the highly reliable semiconductor device can be manufactured by giving stable electric characteristics to the transistor.

    摘要翻译： 提供了一种高可靠性的半导体器件，其通过对其中阈值电压难以控制的半导体膜用作有源层的晶体管给予稳定的电特性。 通过使用具有负固定电荷的氧化硅膜作为与晶体管的有源层或有源层附近的膜接触的膜，由于负固定，总是向有源层施加负电场 电荷和晶体管的阈值电压可以向正方向移动。 因此，可以通过给晶体管提供稳定的电特性来制造高度可靠的半导体器件。

    Method of manufacturing semiconductor device
    10.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08673739B2

    公开(公告)日：2014-03-18

    申请号：US13303519

    申请日：2011-11-23

    申请人： Toru Takayama ,  Yuugo Goto ,  Yumiko Fukumoto ,  Junya Maruyama ,  Takuya Tsurume

    发明人： Toru Takayama ,  Yuugo Goto ,  Yumiko Fukumoto ,  Junya Maruyama ,  Takuya Tsurume

    IPC分类号： H01L21/30

    CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L33/0079

    摘要： It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.

    摘要翻译： 本发明的目的是提供一种具有高度可靠的密封结构的轻质半导体器件及其制造方法，该密封结构能够防止元素特性恶化的诸如水分等杂质的侵入。 具有优异阻气性的保护膜（其是如果在元件上直接形成保护膜时可能损坏元件的保护膜）预先在其上形成有元件的基板之外的耐热基板上形成 。 保护膜从耐热基材上剥离，并在其上形成的元件在基板上转印以密封元件。