Piezoelectric device and method for manufacturing thereof
    25.
    发明授权
    Piezoelectric device and method for manufacturing thereof 有权
    压电元件及其制造方法

    公开(公告)号:US08963403B2

    公开(公告)日:2015-02-24

    申请号:US13310109

    申请日:2011-12-02

    申请人: Takashi Yamane

    发明人: Takashi Yamane

    IPC分类号: H03H9/13 H03H3/04 H03H9/56

    摘要: In a piezoelectric device, a lower covering layer, a piezoelectric material layer, a lower electrode layer, and an upper electrode layer, which define common layers, and an upper covering layer, which defines a specific layer, are laminated on a substrate. The piezoelectric material layer is sandwiched between a pair of electrodes. First to third vibration regions are provided in which the electrodes are superimposed with the piezoelectric material layer therebetween when viewed in a transparent manner in the direction in which the layers are laminated. The upper covering layer includes only a portion having with a first thickness in the first vibration region, includes a portion having the first thickness and a portion having a second thickness that is smaller than the first thickness in the second vibration region, and includes only a portion having the second thickness in the third vibration region.

    摘要翻译: 在基板上层压压电元件,将覆盖层,压电材料层,下电极层和上电极层,以及限定特定层的上覆盖层层叠。 压电材料层夹在一对电极之间。 提供了第一至第三振动区域,其中当层压层的方向以透明的方式观察时,电极与其间的压电材料层叠加。 上覆盖层仅包括在第一振动区域中具有第一厚度的部分,包括具有第一厚度的部分和具有小于第二振动区域中的第一厚度的第二厚度的部分,并且仅包括 在第三振动区域具有第二厚度的部分。

    Acoustic wave device with frequency control film
    28.
    发明授权
    Acoustic wave device with frequency control film 有权
    具有频率控制膜的声波装置

    公开(公告)号:US08344590B2

    公开(公告)日:2013-01-01

    申请号:US13431642

    申请日:2012-03-27

    IPC分类号: H01L41/04 H03H9/205

    摘要: An acoustic wave device includes a main resonator and a sub resonator each having a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on an upper side of the piezoelectric film. The sub resonator has a mass addition film on the upper electrode in a resonance area in which the upper electrode and the lower electrode face each other. At least one of the main resonator and the sub resonator is provided with a frequency control film on an upper side of the resonance area, and the frequency control film has a weight per unit area smaller than a weight of the mass addition film per unit area.

    摘要翻译: 声波装置包括主谐振器和子谐振器,每个具有基板,设置在基板上的下电极,设置在下电极上的压电膜和设置在压电膜上侧的上电极。 副谐振器在上电极和上电极彼此面对的共振区域中的上电极上具有质量加成膜。 主谐振器和副谐振器中的至少一个在谐振区域的上侧设置有频率控制膜,频率控制膜的每单位面积的重量比单位面积的质量加成膜的重量小 。

    Piezoelectric Resonator and Piezoelectric Filter Device
    29.
    发明申请
    Piezoelectric Resonator and Piezoelectric Filter Device 审中-公开
    压电谐振器和压电滤波器

    公开(公告)号:US20100134210A1

    公开(公告)日:2010-06-03

    申请号:US12683092

    申请日:2010-01-06

    申请人: Keiichi Umeda

    发明人: Keiichi Umeda

    IPC分类号: H03H9/205 H03H9/17

    摘要: A piezoelectric resonator includes an acoustic reflective layer including first acoustic impedance sub-layers made of a material with relatively low acoustic impedance and second acoustic impedance sub-layers made of a material with relatively high acoustic impedance. A thin-film laminate is disposed on the acoustic reflective layer. The thin-film laminate includes a piezoelectric thin-film, a first electrode, a second electrode greater than the first electrode, and a mass-adding film. The second electrode is disposed on the acoustic reflective layer. The mass-adding film is disposed in at least one portion of a region outside a piezoelectric vibrational section and extends around the first electrode. The second electrode extends over the piezoelectric vibrational section to a region containing the mass-adding film.

    摘要翻译: 压电谐振器包括声反射层,其包括由具有较低声阻抗的材料制成的第一声阻抗子层和由具有较高声阻抗的材料制成的第二声阻抗子层。 薄膜层叠体设置在声反射层上。 薄膜层压体包括压电薄膜,第一电极,大于第一电极的第二电极和质量添加膜。 第二电极设置在声反射层上。 质量添加膜设置在压电振动部分外部的区域的至少一部分中,并且围绕第一电极延伸。 第二电极在压电振动部分上延伸到包含质量添加膜的区域。