公开(公告)号：US3676756A

公开(公告)日：1972-07-11

申请号：US3676756D

申请日：1969-09-18

申请人： INNOTECH CORP

发明人： MERRIN SEYMOUR

IPC分类号： H01L21/316 ,  H01L29/00 ,  H01L11/14

CPC分类号： H01L21/316 ,  H01L29/00

摘要： An insulated gate field effect transistor having a glass gate insulator is fabricated by diffusing into a semiconductor substrate the impurities required to produce the channel, source and drain, exposing the substrate by etching away any remaining masking layer, forming a gate insulator of thin film ion impermeable glass on the exposed substrate and then metalizing and packaging the resulting device. Advantageously, the thin glass film is also used as a passivating layer. IGFET''S fabricated in this manner are significantly more resistant to contamination than are prior art devices using oxide insulated gates and passivating layers. As a consequence they are more economical to fabricate and more reliable in operation.

摘要翻译： 具有玻璃栅极绝缘体的绝缘栅场效应晶体管通过向半导体衬底扩散产生沟道，源极和漏极所需的杂质，通过蚀刻掉任何残留的掩模层而暴露衬底，形成薄膜离子的栅极绝缘体 不透水玻璃在暴露的基材上，然后金属化和包装所得到的装置。 有利地，薄玻璃膜也用作钝化层。 与使用氧化物绝缘栅极和钝化层的现有技术的器件相比，以这种方式制造的IGFET'S显着地比抗污染性更强。 因此，它们在制造中更经济并且在操作中更可靠。

公开(公告)号：US3663873A

公开(公告)日：1972-05-16

申请号：US3663873D

申请日：1969-01-27

申请人： SONY CORP

发明人： YAGI HAJIME

IPC分类号： H01L21/00 ,  H01L29/00 ,  H01L29/76 ,  H01L29/80 ,  H01L11/14

CPC分类号： H01L29/76 ,  H01L21/00 ,  H01L29/00 ,  H01L29/80 ,  Y10S148/037 ,  Y10S148/053 ,  Y10S148/085 ,  Y10S148/151

摘要： Field effect transistor and method of making same, the transistor having a high resistance layer of one conductivity type, an epitaxially grown layer of the opposite conductivity type on the first layer, and a low resistance semiconductor layer formed between the two layers and extending partly into both layers, the low resistance layer being of the same conductivity type as the first-mentioned layer, with a channel between the low resistance layer and the second semiconductor layer.

摘要翻译： 场效应晶体管及其制造方法，具有一个导电类型的高电阻层的晶体管，在第一层上具有相反导电类型的外延生长层，以及形成在两层之间并部分延伸到 两层，低电阻层与第一层具有相同的导电类型，在低电阻层和第二半导体层之间具有沟道。

公开(公告)号：US3657615A

公开(公告)日：1972-04-18

申请号：US3657615D

申请日：1970-06-30

申请人： WESTINGHOUSE ELECTRIC CORP

发明人： DRIVER MICHAEL C

IPC分类号： H01L23/36 ,  H01L29/00 ,  H01L29/10 ,  H01L29/812 ,  H01L11/14

CPC分类号： H01L29/812 ,  H01L23/36 ,  H01L29/00 ,  H01L29/1075 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： This disclosure is directed to a Schottky Barrier field effect transistor (FET) having a low thermal impedance and to a process of producing it. The thermal impedance of the device is reduced by reducing the thickness of a semiinsulating layer of semiconductor material through which the device is joined to a heat sink. The process for making the device disclosed makes possible the reducing of the layer.

摘要翻译： 本公开涉及具有低热阻抗的肖特基势垒场效应晶体管（FET）及其制造方法。

公开(公告)号：US3656011A

公开(公告)日：1972-04-11

申请号：US3656011D

申请日：1971-02-02

申请人： RCA CORP

发明人： WEINBERG ZEEV ABRAHAM

IPC分类号： G11C19/28 ,  H01L27/105 ,  H01L11/14

CPC分类号： G11C19/282 ,  H01L27/1057

摘要： A shift register using charge coupled device techniques wherein three-phase operation is converted to one-phase operation to provide faster operation thereof.

摘要翻译： 一种使用电荷耦合器件技术的移位寄存器，其中三相操作被转换为单相操作以提供更快的操作。

公开(公告)号：US3652907A

公开(公告)日：1972-03-28

申请号：US3652907D

申请日：1970-05-05

申请人： WESTINGHOUSE ELECTRIC CORP

发明人： PAGE DERRICK J ,  BRODY THOMAS P

IPC分类号： H01L29/00 ,  H01L29/76 ,  H01L11/14

CPC分类号： H01L29/00 ,  H01L29/76

摘要： This disclosure is concerned with a thin film, power field effect transistor having a power dissipation capability of 80 watts/cm.2. The transistor has a thin film interdigitated source and drain used in conjunction with a thick film source and drain leads. The thick film source and drain leads essentially eliminates negative feedback resulting from a voltage drop in the source and drain.

摘要翻译： 本公开涉及具有80瓦/ cm 2的功率消耗能力的薄膜功率场效应晶体管。 晶体管具有与厚膜源极和漏极引线结合使用的薄膜交叉的源极和漏极。 厚膜源极和漏极引线基本上消除了源极和漏极中的电压降引起的负反馈。

公开(公告)号：US3649885A

公开(公告)日：1972-03-14

申请号：US3649885D

申请日：1970-06-24

申请人： PHILIPS CORP

发明人： NIENHUIS RIJKENT JAN

IPC分类号： H01L27/02 ,  H01L27/06 ,  H01L29/78 ,  H03F1/52 ,  H03K17/0812 ,  H01L11/14

CPC分类号： H03K17/08122 ,  H01L27/0251 ,  H01L27/0255 ,  H01L27/0629 ,  H01L29/7831 ,  H03F1/523

摘要： A field-effect transistor having at least two insulated-gate electrodes comprises an island zone of the same conductivity type as the electrode zones (source and drain zones) situated between two gate electrodes. According to the invention an aperture is provided in said island zone in which aperture a circuit element is provided, particularly a safety diode, which is connected to a gate electrode. In this case a particularly simple and short connection is possible between the circuit element and a gate electrode.

摘要翻译： 具有至少两个绝缘栅电极的场效应晶体管包括与位于两个栅电极之间的电极区（源区和漏区）相同导电类型的岛区。 根据本发明，在所述岛区域中提供孔，其中设置有电路元件的孔，特别是连接到栅电极的安全二极管。 在这种情况下，电路元件和栅电极之间可以具有特别简单且短的连接。

公开(公告)号：US3641405A

公开(公告)日：1972-02-08

申请号：US3641405D

申请日：1969-12-16

申请人： GEN ELECTRIC

发明人： BROWN DALE M ,  ENGELER WILLIAM E

IPC分类号： H01L21/225 ,  H01L21/316 ,  H01L27/00 ,  H01L27/092 ,  H01L29/00 ,  H01L11/14

CPC分类号： H01L27/00 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/2255 ,  H01L21/31612 ,  H01L21/31662 ,  H01L27/0927 ,  H01L29/00

摘要： Improved semiconductor field-effect transistors have selfregistration and electrical insulation. Conductivity-modified, surface adjacent source and drain regions are formed by diffusing dopants through gate-oxide layer. One embodiment features a conducting gate electrode which is formed from a thin deposited film. In this embodiment a large region of opposite-conductivitytype semiconductor is formed by diffusion through both conducting and oxide films. Complementary ''''N-channel'''' and ''''P-channel'''' devices may be formed on the same substrate by combining two separate embodiments. In such devices the original conductivitytype semiconductor is the base for one FET, while the large conductivity-modified-type region is the base for the other FET. Such modules may be interconnected to form integrated circuits capable of performing a variety of logical functions.

摘要翻译： 改进的半导体场效应晶体管具有自动对准和电绝缘。 通过将掺杂剂通过栅氧化层扩散形成电导率改性的表面相邻源极和漏极区。 一个实施例的特征在于由薄的沉积膜形成的导电栅电极。 在本实施例中，通过扩散通过导电和氧化膜形成相反导电型半导体的大区域。 可以通过组合两个单独的实施例在相同的基板上形成互补的“N沟道”和“P沟道”器件。 在这种器件中，原始导电型半导体是一个FET的基极，而大导电率改变型区域是另一个FET的基极。 这样的模块可以互连以形成能够执行各种逻辑功能的集成电路。

公开(公告)号：US3617823A

公开(公告)日：1971-11-02

申请号：US3617823D

申请日：1969-03-07

申请人： RCA CORP

发明人： HOFSTEIN STEVEN R

IPC分类号： H01L27/06 ,  H01L27/146 ,  H01L11/14

CPC分类号： H01L27/0694 ,  H01L27/14681

摘要： A planar phototransistor array having relatively fast response time and being efficiently sensitive to radiation in the near infrared includes a plurality of phototransistors arranged in rows and columns and conductive means which may be selectively coupled by means of an insulated gate enhancement structure to the base regions of each of the transistors. In operation, all transistors are normally biased into a nonconductive condition, but selected ones of the transistors may be biased into photoconduction and provide outputs representative of the light falling thereon.

公开(公告)号：US3612964A

公开(公告)日：1971-10-12

申请号：US3612964D

申请日：1970-01-02

申请人： MITSUBISHI ELECTRIC CORP

发明人： KAWAZU SATORU

IPC分类号： H01L29/00 ,  H01L29/93 ,  H01L11/14

CPC分类号： H01L29/93 ,  H01L29/00

摘要： A comb-shaped P-type region is provided on one main face of an N-type substrate to form therebetween a P-N junction terminating at that face. An insulating film is disposed on both the one face of the substrate and the P-region, except for a predetermined portion of the P-region, and a metallic layer is disposed on the film to extend over the P-N junction. A DC voltage across the substrate and P-region is controlled to change the capacitance between the substrate and film of the resulting MIS-type structure.

公开(公告)号：US3590342A

公开(公告)日：1971-06-29

申请号：US3590342D

申请日：1968-11-06

申请人： HEWLETT PACKARD CO

发明人： JEKAT HANS J

IPC分类号： H01L23/535 ,  H01L27/088 ,  H01L11/14

CPC分类号： H01L23/535 ,  H01L27/088 ,  H01L2924/0002 ,  Y10S148/085 ,  H01L2924/00

摘要： In a P-channel MOS integrated circuit each active P -type region to be operated at ground potential is connected by a conductor to an adjacent N -type region in the N-type substrate thereby interconnecting these active regions through the substrate.