公开(公告)号：US5903098A

公开(公告)日：1999-05-11

申请号：US779223

申请日：1997-01-06

Applicant: Gary W. Jones

Inventor： Gary W. Jones

IPC: G01R33/10 ,  G02B27/00 ,  G02B27/01 ,  G02B27/22 ,  G09G3/00 ,  H01J3/02 ,  H01J9/02 ,  H01J9/24 ,  H01J29/94 ,  H01J31/12 ,  H04N5/70 ,  H04N5/74 ,  H04N13/00 ,  H01J1/30

CPC classification number: G09G3/003 ,  G01R33/10 ,  G02B27/017 ,  G02B27/0172 ,  G02B27/0176 ,  G02B27/2235 ,  G09G3/02 ,  H01J29/94 ,  H01J3/022 ,  H01J31/127 ,  H01J9/025 ,  H04N13/0422 ,  H04N13/0438 ,  H04N13/044 ,  H04N13/0459 ,  H04N13/0497 ,  H04N5/7408 ,  G02B2027/0132 ,  G02B2027/0136 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2209/385 ,  H01J2329/00 ,  H04N13/0059 ,  H04N13/0285 ,  H04N13/0427 ,  H04N13/0456 ,  H04N5/70 ,  H04N5/7491

Abstract: A field emitter array device includes a ceramic substrate member having a multiplicity of through conductive vias therein. An insulative material layer is located on the ceramic substrate member. An addressable array of gate and emitter line elements is located on the insulative material and is conductively coupled to the through substrate conductive vias. A backside connector is located on the ceramic substrate member and conductively coupled to the vias for connection of the ceramic substrate member with an array driver device for the addressable array of emitter and gate line elements. A field emitter array of field emitter elements on the insulative material layer of the ceramic substrate member which are operatively coupled with the addressable array of gate and emitter line elements.

Abstract translation: 场致发射体阵列器件包括其中具有多个通孔的陶瓷衬底构件。 绝缘材料层位于陶瓷基板部件上。 栅极和发射极线元件的可寻址阵列位于绝缘材料上并与导电通孔导电耦合。 背面连接器位于陶瓷基板构件上并且导电地耦合到通孔，用于将陶瓷基板构件与用于可寻址阵列的发射极和栅极线路元件的阵列驱动器装置连接。 在陶瓷衬底构件的绝缘材料层上的场发射极元件的场发射极阵列，其与栅极和发射极线元件的可寻址阵列可操作地耦合。

公开(公告)号：US5898262A

公开(公告)日：1999-04-27

申请号：US889509

申请日：1997-07-08

Applicant: Chang-seob Kim ,  Bong-uk Jeong

Inventor： Chang-seob Kim ,  Bong-uk Jeong

IPC: H01J1/304 ,  H01J3/02 ,  H01J29/04 ,  H01J29/48 ,  H01J1/14

CPC classification number: H01J29/04 ,  H01J29/481 ,  H01J3/022

Abstract: In an electron gun for a color cathode ray tube including a cathode structure having three electrodes, a control electrode and a screen electrode, and a plurality of focus electrodes and last accelerating electrodes for forming electron lenses, the cathode structure includes a rimmed electrode member, an insulating member inserted into the electrode member and having an indentation formed on the upper surface thereof, a field emission array cell having a base member which is inserted into the indentation, and a plurality of supporting members installed at the insulating member for pressing down on the upper surface of the edge of the field emission array cell which is inserted into the indentation toward the upper surface of the insulating member. Thus, the strength of attachment between the insulating member and a field emission device is improved.

Abstract translation: 在包括具有三个电极的阴极结构，控制电极和屏幕电极以及多个聚焦电极和用于形成电子透镜的最后加速电极的彩色阴极射线管的电子枪中，阴极结构包括边缘电极部件， 绝缘构件，其插入到所述电极构件中并且具有形成在其上表面上的凹陷;场发射阵列单元，具有插入到所述凹槽中的基座构件;以及多个支撑构件，安装在所述绝缘构件上以压下 该场发射阵列单元的边缘的上表面朝向该绝缘构件的上表面插入到该凹陷中。 因此，提高了绝缘构件和场致发射装置之间的附着强度。

公开(公告)号：US5892320A

公开(公告)日：1999-04-06

申请号：US835155

申请日：1997-04-04

Applicant: Kevin Tjaden ,  John K. Lee

Inventor： Kevin Tjaden ,  John K. Lee

IPC: H01J3/02 ,  H01J9/02 ,  H01J1/30 ,  H01J19/24

CPC classification number: H01J9/025 ,  H01J3/022

Abstract: A field emission display includes a substrate (400) having a trench (402) formed therein, an emitter (418) formed in the trench (402), a dielectric layer (412) disposed on the substrate (400), and a grid material layer (406) disposed on the dielectric layer (412). The dielectric layer (412) is exposed by a planarization method. Consequently, the emitter (418) is necessarily aligned with the opening in the grid material layer (406). An electric field applied to the grid material layer (406) activates emitter (418) to emit electrons (416) to strike a faceplate (414).

Abstract translation: 场发射显示器包括其中形成有沟槽（402）的衬底（400），形成在沟槽（402）中的发射极（418），设置在衬底（400）上的电介质层（412） 层（406）设置在电介质层（412）上。 介电层（412）通过平面化方法曝光。 因此，发射器（418）必须与栅格材料层（406）中的开口对准。 施加到栅格材料层（406）的电场激活发射器（418）以发射电子（416）以撞击面板（414）。

公开(公告)号：US5891271A

公开(公告)日：1999-04-06

申请号：US971281

申请日：1997-11-18

Applicant: Norio Yuki ,  Yoshihisa Kita

Inventor： Norio Yuki ,  Yoshihisa Kita

IPC: C22C38/00 ,  C22C38/08 ,  H01J3/02 ,  H01J29/48 ,  H01J31/20 ,  H01J17/04 ,  C22C19/03

CPC classification number: H01J29/485 ,  C22C38/08

Abstract: Fe--Ni alloys for electron gun parts consisting of, all by weight, 30-55% Ni, 0.0010-0.200% S, up to 0.8% Mn, from not less than 0.005 to less than 0.5% in total of one or more elements selected from the group consisting of Ti, Mg, Ce and Ca, and the balance substantially Fe and unavoidable impurities, and electron gun parts, typically electron gun electrodes, made of the alloys by punching are provided. Controlling the grain size number to No. 7.0 or above is also effective. The Fe--Ni alloys of this invention for electron gun parts are remarkably improved in press punchability and can solve burring problems through the easy formation of sulfide inclusions of Ti, Mg, Ce, and Ca.

Abstract translation: 用于电子枪部件的Fe-Ni合金，全部由30-55％Ni，0.0010-0.200％S，至多0.8％Mn组成，从一种或多种元素的总和不小于0.005至小于0.5％ 选自Ti，Mg，Ce和Ca，余量基本上为Fe和不可避免的杂质，以及通过冲孔由合金制成的电子枪部件，通常为电子枪电极。 将粒度数控制在7.0以上也是有效的。 本发明的电子枪部件的Fe-Ni合金在冲压冲压性方面显着提高，并且通过容易地形成Ti，Mg，Ce和Ca的硫化物夹杂物可以解决毛刺问题。

公开(公告)号：US5889361A

公开(公告)日：1999-03-30

申请号：US92884

申请日：1998-06-08

Applicant: Wen Chun Wang ,  Jermmy J. M. Wang ,  Tzung-Zu Yang

Inventor： Wen Chun Wang ,  Jermmy J. M. Wang ,  Tzung-Zu Yang

IPC: H01J3/02 ,  H01J9/02 ,  H01J1/30

CPC classification number: H01J3/022 ,  H01J2201/319 ,  H01J2329/00

Abstract: A cold cathode field emission device is described. A key feature of its design is that groups of microtips share a single conductive disk with a reliable ballast resistor being interposed between each of these conductive disks and the cathode conductor. Additionally, a resistor, rather than a conductor, is used to connect the gate conductive disk to the gate electrode. The latter is arranged so as not to overlap with the cathode electrode. The cathode and gate conductive disks ensure that the ballast resistance associated with each microtip is essentially the same.

Abstract translation: 描述冷阴极场致发射器件。 其设计的一个关键特征是，一组微尖头共享一个导电盘，在这些导电盘和阴极导体之间​​插入可靠的镇流电阻。 此外，使用电阻器而不是导体将栅极导电盘连接到栅电极。 后者被布置成不与阴极重叠。 阴极和栅极导电盘确保与每个微尖端相关联的镇流电阻基本相同。

公开(公告)号：US5869924A

公开(公告)日：1999-02-09

申请号：US889508

申请日：1997-07-08

Applicant: Sang-kyun Kim

Inventor： Sang-kyun Kim

IPC: H01J1/304 ,  H01J3/02 ,  H01J29/04 ,  H01J29/48 ,  H01J29/46

CPC classification number: H01J3/022 ,  H01J29/04 ,  H01J29/485

Abstract: A cathode structure and an electron gun for a CRT adopting the same are provided. The cathode structure has an external case, an insulating member filled in the external case, a plurality of pins fixedly inserted into the insulating member and of which end portions extend from the upper surface of the insulating member, a field emission device (FED) unit attached on the insulating member, and a wire for electrically connecting the FED unit to the end portions of the pins. Electrons are emitted by a field effect rather than by thermal electron emission.

Abstract translation: 提供了一种用于采用该阴极结构的CRT的阴极结构和电子枪。 阴极结构具有外部壳体，填充在外部壳体中的绝缘构件，固定地插入到绝缘构件中并且其端部从绝缘构件的上表面延伸的多个销，场致发射装置（FED）单元 连接在绝缘构件上，以及用于将FED单元电连接到销的端部的导线。 电子通过场效应而不是热电子发射发射。

公开(公告)号：US5866438A

公开(公告)日：1999-02-02

申请号：US59333

申请日：1998-04-14

Applicant: Junji Itoh ,  Takahiko Uematsu ,  Yoichi Ryokai ,  Masato Nishizawa ,  Kazuo Matsuzaki

Inventor： Junji Itoh ,  Takahiko Uematsu ,  Yoichi Ryokai ,  Masato Nishizawa ,  Kazuo Matsuzaki

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01L21/00

CPC classification number: H01J9/025 ,  H01J3/022

Abstract: In a comb-like or wedge-like electron emitting device, an emitter or both an emitter and an anode electrode are processed from a single-crystal silicon thin film of an SOI wafer. The single-crystal silicon thin film in portions other than the processed portion is removed so that the silicon oxide layer is dug down further slightly. A gate electrode for applying an electric field in order to draw electrons out of the emitter is provided in the dug-down portion. When the end and side faces of the emitter are formed as (111) faces by anisotropic etching in the condition that the single-crystal silicon thin film is oriented to a (100) face, the emitter has a sharp edge at about 55.degree. with respect to the substrate. In a conical electron emitting device, the gate electrode is constituted by a single-crystal silicon thin film of an SOI wafer so that a pyramid surrounded by the (111) faces is formed on the single-crystal silicon substrate.

Abstract translation: 在梳状或楔形电子发射器件中，从SOI晶片的单晶硅薄膜处理发射极或发射极和阳极两者。 去除处理部分以外的部分中的单晶硅薄膜，使得氧化硅层进一步略微下降。 用于施加电场以便将电子从发射极引出的栅电极设置在所述挖空部分中。 当在单晶硅薄膜取向为（100）面的条件下，通过各向异性蚀刻将发射极的端面和侧面形成为（111）面时，发射极具有约55°的尖锐边缘， 相对于底物。 在圆锥形电子发射器件中，栅极由SOI晶片的单晶硅薄膜构成，从而在单晶硅衬底上形成由（111）面包围的金字塔。

公开(公告)号：US5859493A

公开(公告)日：1999-01-12

申请号：US667874

申请日：1996-06-20

Applicant: Jong-min Kim

Inventor： Jong-min Kim

IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01J1/02

CPC classification number: H01J3/022 ,  H01J9/025

Abstract: A lateral field emission display in which a cathode and anode are laterally arrayed, and a fabricating method thereof, since the micro tip is formed to be sharp through the reactive ion etching method, efficiency of electron emission is better than a conventional wedge-type tip. Also, since focusing of an electron beam is accurately controlled, a relatively low-voltage driving is possible. Further, since the first gate is further provided above the cathode and the anode is formed to be higher than the second gate, a trace control of an electron-beam emitted from the micro tip is easy and focusing efficiency of the emitted electron beam to the anode is also improved.

Abstract translation: 横向排列阴极和阳极的横向场致发射显示器及其制造方法，由于微尖端通过反应离子蚀刻方法形成为尖锐的，所以电子发射的效率优于传统的楔形尖端 。 此外，由于电子束的聚焦被精确地控制，所以可以进行相对低电压的驱动。 此外，由于第一栅极还设置在阴极上方并且阳极形成为高于第二栅极，所以从微尖端发射的电子束的迹线控制容易，并且发射的电子束的聚焦效率 阳极也得到改善。

公开(公告)号：US5814926A

公开(公告)日：1998-09-29

申请号：US547879

申请日：1995-10-25

Applicant: Yoshinori Tomihari

Inventor： Yoshinori Tomihari

IPC: H01J1/304 ,  H01J3/02 ,  H01J3/18 ,  H01J1/30

CPC classification number: H01J3/022

Abstract: An electron emission device which allows provision of a larger-current, sharper, higher-resolution beam of electrons, has a offset control electrode 10 which is located, on an insulating layer 9, above a gate electrode 7 formed on a plurality of cathodes 4. Each of the centers of the openings of the control electrode 10 is offset from the centers of the openings of the gate electrode 7.

Abstract translation: 允许提供更大电流，更清晰，更高分辨率的电子束的电子发射装置具有偏移控制电极10，该偏移控制电极10位于绝缘层9上，形成在多个阴极4上的栅极电极7上方 控制电极10的开口的每个中心偏离栅电极7的开口的中心。

公开(公告)号：US5813892A

公开(公告)日：1998-09-29

申请号：US678565

申请日：1996-07-12

Applicant: Christopher J. Spindt ,  John M. Macaulay

Inventor： Christopher J. Spindt ,  John M. Macaulay

IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319

Abstract: A gated electron-emitter is fabricated according to the process in which charged particles are directed towards a track-susceptible layer (48) to form charged-particle tracks (50B.sub.1) through the track-susceptible layer. Apertures (52.sub.1) are formed through the track-susceptible layer by etching along the charged-particle tracks. A gate layer (46) is etched through the apertures to form gate openings (54.sub.1) through the gate layer. An insulating layer (24) is etched through the gate openings to form dielectric open spaces (56.sub.1, 94.sub.1, 106.sub.1, or 114.sub.1) through the insulating layer down to a resistive layer (22B) of an underlying conductive region (22). Electron-emissive elements (30B, 30/88D.sub.1, 98/102.sub.1, or 118.sub.1) are formed in the dielectric open spaces over the resistive layer.

Abstract translation: 根据其中带电粒子指向轨道敏感层（48）以通过轨道敏感层形成带电粒子轨迹（50B1）的工艺制造门控电子发射器。 通过沿着带电粒子轨迹的蚀刻，通过轨道敏感层形成孔径（521）。 通过孔径蚀刻栅极层（46），以形成通过栅极层的栅极开口（541）。 通过栅极开口蚀刻绝缘层（24），以形成通过绝缘层的下行导电区域（22）的电阻层（22B）的电介质开放空间（561,941,1061或1141）。 在电阻层上的电介质开放空间中形成电子发射元件（30B，30 / 88D1,98 / 1011或1181）。