利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

32 条记录 (耗时 0.019 秒)

    SEMICONDUCTOR DEVICE EXHIBITING A HIGH BREAKDOWN VOLTAGE AND THE METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    SEMICONDUCTOR DEVICE EXHIBITING A HIGH BREAKDOWN VOLTAGE AND THE METHOD OF MANUFACTURING THE SAME 失效
    展示高突变电压的半导体器件及其制造方法

    公开(公告)号：US20070155144A1

    公开(公告)日：2007-07-05

    申请号：US11681525

    申请日：2007-03-02

    申请人： Kazuo Matsuzaki ,  Naoto Fujishima ,  Akio Kitamura ,  Gen Tada ,  Masaru Saito

    发明人： Kazuo Matsuzaki ,  Naoto Fujishima ,  Akio Kitamura ,  Gen Tada ,  Masaru Saito

    IPC分类号： H01L21/425

    CPC分类号： H01L29/7816 ,  H01L21/266 ,  H01L29/0615 ,  H01L29/0634 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1079 ,  H01L29/41775 ,  H01L29/42368 ,  H01L29/66598 ,  H01L29/66659 ,  H01L29/66674 ,  H01L29/66681 ,  H01L29/7801 ,  H01L29/7835 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The invention provides a semiconductor device exhibiting a stable and high breakdown voltage, which is manufactured at a low manufacturing cost. The semiconductor device of the invention includes an n-type silicon substrate; a p-type base region in the surface portion of substrate; an n-type drain region in the surface portion of n-type substrate; a p-type offset region in the surface portion of n-type substrate; an n-type source region in the surface portion of p-type base region; a p-type contact region in the surface portion of p-type base region; a gate electrode above the extended portion of p-type base region extending between n-type source region and n-type substrate (or p-type offset region), with a gate insulation film interposed therebetween; an insulation film on gate electrode and p-type offset region; a source electrode on n-type source region; and a drain electrode on n-type drain region. The p-type offset region is formed of a first p-type sub-region, a second p-type sub-region, and a third p-type sub-region.

    摘要翻译： 本发明提供了以低制造成本制造的稳定且高的击穿电压的半导体器件。 本发明的半导体器件包括n型硅衬底; 在基板的表面部分中的p型基极区域; n型衬底的表面部分中的n型漏极区域; n型衬底的表面部分中的p型偏移区域; p型基极区域的表面部分中的n型源极区域; p型基极区域的表面部分中的p型接触区域; 位于p型基极区域的延伸部分之间的栅电极，其在n型源极区域和n型衬底（或p型偏移区域）之间延伸，栅极绝缘膜插入其间; 栅极电极和p型偏移区域上的绝缘膜; n型源极区上的源电极; 以及n型漏区上的漏电极。 p型偏移区域由第一p型子区域，第二p型子区域和第三p型子区域形成。

    Field emission type electron emitting device with convex insulating portions
    3.
    发明授权
    Field emission type electron emitting device with convex insulating portions 失效
    具有凸形绝缘部分的场发射型电子发射器件

    公开(公告)号：US5793153A

    公开(公告)日：1998-08-11

    申请号：US512686

    申请日：1995-08-08

    申请人： Junji Itoh ,  Takahiko Uematsu ,  Yoichi Ryokai ,  Masato Nishizawa ,  Kazuo Matsuzaki

    发明人： Junji Itoh ,  Takahiko Uematsu ,  Yoichi Ryokai ,  Masato Nishizawa ,  Kazuo Matsuzaki

    IPC分类号： H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01L21/00 ,  H01J1/46 ,  H01J1/02 ,  H01J1/16 ,  H01J21/10

    CPC分类号： H01J9/025 ,  H01J3/022

    摘要： In a comb-like or wedge-like electron emitting device, an emitter or both an emitter and an anode electrode are processed from a single-crystal silicon thin film of an SOI wafer. The single-crystal silicon thin film in portions other than the processed portion is removed so that the silicon oxide layer is dug down further slightly. A gate electrode for applying an electric field in order to draw electrons out of the emitter is provided in the dug-down portion. When the end and side faces of the emitter are formed as (111) faces by anisotropic etching in the condition that the single-crystal silicon thin film is oriented to a (100) face, the emitter has a sharp edge at about 55.degree. with respect to the substrate. In a conical electron emitting device, the gate electrode is constituted by a single-crystal silicon thin film of an SOI wafer so that a pyramid surrounded by the (111) faces is formed on the single-crystal silicon substrate.

    摘要翻译： 在梳状或楔形电子发射器件中，从SOI晶片的单晶硅薄膜处理发射极或发射极和阳极两者。 去除处理部分以外的部分中的单晶硅薄膜，使得氧化硅层进一步略微下降。 用于施加电场以便将电子从发射极引出的栅电极设置在所述挖空部分中。 当在单晶硅薄膜取向为（100）面的条件下，通过各向异性蚀刻将发射极的端面和侧面形成为（111）面时，发射极具有约55°的尖锐边缘， 相对于底物。 在圆锥形电子发射器件中，栅极由SOI晶片的单晶硅薄膜构成，从而在单晶硅衬底上形成由（111）面包围的金字塔。

    Lateral semiconductor device with maximized breakdown voltage, and methods of fixing potential of same
    4.
    发明授权
    Lateral semiconductor device with maximized breakdown voltage, and methods of fixing potential of same 失效
    具有最大击穿电压的侧向半导体器件及其固定电位的方法

    公开(公告)号：US5789782A

    公开(公告)日：1998-08-04

    申请号：US794146

    申请日：1997-02-03

    申请人： Kazuo Matsuzaki

    发明人： Kazuo Matsuzaki

    IPC分类号： H01L21/762 ,  H01L29/861 ,  H01L27/01 ,  H01L23/58

    CPC分类号： H01L21/76264 ,  H01L29/861 ,  H01L21/76267 ,  H01L21/76275 ,  H01L21/76283 ,  H01L21/76286

    摘要： A lateral semiconductor device with enhanced breakdown characteristics includes a semiconductor substrate composite of first and second semiconductor substrates bonded to one another via an oxide film. An insulation film is buried in a separation trench which extends from a major surface of the first semiconductor substrate to the oxide film. An element region of greater than 10 .mu.m in thickness is isolated by the separation trench from other element regions. First and second diffusion regions of opposite conductivity type are formed on the element region. The potential of the second substrate is fixed at one-third of the designed maximum breakdown voltage of the lateral semiconductor device. Alternatively, if the element region is 10 .mu.m or less in thickness, the potential of the second substrate is fixed at one-half of the designed maximum breakdown voltage of the lateral semiconductor device.

    摘要翻译： 具有增强的击穿特性的横向半导体器件包括经由氧化物膜彼此接合的第一和第二半导体衬底的半导体衬底复合物。 绝缘膜被埋在从第一半导体衬底的主表面延伸到氧化物膜的分离槽中。 厚度大于10微米的元件区域通过分离沟槽与其它元件区域隔离。 在元件区域上形成相反导电类型的第一和第二扩散区域。 第二基板的电位固定在横向半导体器件的设计的最大击穿电压的三分之一处。 或者，如果元件区域的厚度为10μm以下，则第二基板的电位被固定为横向半导体器件的设计的最大击穿电压的一半。

    Lateral semiconductor device and method of fixing potential of the same
    5.
    发明授权
    Lateral semiconductor device and method of fixing potential of the same 失效
    侧面半导体器件及其固定电位的方法

    公开(公告)号：US5631491A

    公开(公告)日：1997-05-20

    申请号：US530003

    申请日：1995-09-19

    申请人： Kazuo Matsuzaki

    发明人： Kazuo Matsuzaki

    IPC分类号： H01L21/762 ,  H01L29/861 ,  H01L23/58 ,  H01L27/04

    CPC分类号： H01L21/76264 ,  H01L29/861 ,  H01L21/76267 ,  H01L21/76275 ,  H01L21/76283 ,  H01L21/76286

    摘要： A lateral semiconductor device with enhanced breakdown characteristics includes a semiconductor substrate composite of first and second semiconductor substrates bonded to one another via an oxide film. An insulation film is buried in a separation trench which extends from a major surface of the first semiconductor substrate to the oxide film. An element region of 10 .mu.m or more in thickness is isolated by the separation trench from other element regions. First and second diffusion regions of opposite conductivity type are formed on the element region. The potential of the second substrate is fixed at one-third of the designed maximum breakdown voltage of the lateral semiconductor device. Alternatively, if the element region is 10 .mu.m or less in thickness, the potential of the second substrate is fixed at one-half of the designed maximum breakdown voltage of the lateral semiconductor device.

    摘要翻译： 具有增强的击穿特性的横向半导体器件包括经由氧化物膜彼此接合的第一和第二半导体衬底的半导体衬底复合物。 绝缘膜被埋在从第一半导体衬底的主表面延伸到氧化物膜的分离槽中。 10μm以上的元件区域通过分离沟槽与其它元件区域隔离。 在元件区域上形成相反导电类型的第一和第二扩散区域。 第二基板的电位固定在横向半导体器件的设计的最大击穿电压的三分之一处。 或者，如果元件区域的厚度为10μm以下，则第二基板的电位被固定为横向半导体器件的设计的最大击穿电压的一半。

    Stabilized power supply device using a flip chip as an active component
    6.
    发明授权
    Stabilized power supply device using a flip chip as an active component 失效
    使用倒装芯片作为有源元件的稳定电源装置

    公开(公告)号：US5604383A

    公开(公告)日：1997-02-18

    申请号：US439579

    申请日：1995-05-11

    申请人： Kazuo Matsuzaki

    发明人： Kazuo Matsuzaki

    IPC分类号： H01L27/04 ,  G06K19/07 ,  H01L21/822 ,  H01L25/16 ,  H02M3/155 ,  H01L23/48 ,  H01L23/28 ,  H01L29/40 ,  H05K7/20

    CPC分类号： G06K19/0723 ,  H01L25/16 ,  H01L2224/16 ,  H01L2924/01078 ,  H01L2924/01079 ,  Y10S257/904

    摘要： A stabilized power supply device includes a substrate and a passive part laminate layered on the substrate. The passive part laminate, shaped as a single flat board, includes a thin charge storage film element. A thin magnetic inductive film element is laminated on the thin charge storage film element. The device also includes an active part incorporated in a flip chip. The flip chip, including semiconductors and bump electrodes, is mounted on an upper surface of the passive part laminate. The upper surface of the passive part laminate includes terminals for connecting the passive part laminate to the bump electrodes. This connection also fixes the active part to the passive part laminate.

    摘要翻译： 稳定的电源装置包括层叠在基板上的基板和被动部件层压体。 成形为单个平板的无源部分层压板包括薄的电荷存储膜元件。 在薄的电荷存储膜元件上层压薄的磁性感应膜元件。 该装置还包括结合在倒装芯片中的有源部分。 包括半导体和凸块电极的倒装芯片安装在无源部分层压板的上表面上。 被动部件层叠体的上表面包括用于将被动部件层压体连接到凸起电极的端子。 该连接还将活性部件固定在被动部件层压板上。

    Electromagnetic wave detecting apparatus
    7.
    发明授权
    Electromagnetic wave detecting apparatus 失效
    电磁波检测装置

    公开(公告)号：US5463226A

    公开(公告)日：1995-10-31

    申请号：US271458

    申请日：1994-07-07

    申请人： Kazuo Matsuzaki ,  Akira Amano

    发明人： Kazuo Matsuzaki ,  Akira Amano

    IPC分类号： G01R29/08 ,  G01R23/04 ,  H01J17/14 ,  H01J17/40 ,  H01J25/00 ,  G01J5/10

    CPC分类号： H01J17/14 ,  G01R23/04 ,  H01J17/40 ,  H01J25/00

    摘要： A miniaturized electromagnetic wave detecting apparatus is provided that detects wavelengths from the microwave to the infrared regions in any environment. Electrons are field-emitted from an electron emitting means comprising a cold cathode and a gate electrode 2. Spiral motion and elongation of traveling length of the emitted electrons are enhanced by orthogonal magnetic field applied by a magnetic field application means while the electrons are attracted to the anode. The electrons are accelerated by the cyclotron resonance enhanced when the angular cyclotron resonance frequency .omega..sub.c, determined by the magnetic flux density of the orthogonal magnetic field, and the angular frequency .omega..sub.f of the electromagnetic wave to be measured coincide with each other. The accelerated electrons collide with and dissociate the dilute gas molecules to produce multiplied ion-pairs, which are then captured by the cathode and anode. The wavelength of the electromagnetic wave is measured from the angular frequency .omega..sub.c of the cyclotron resonance by detecting the anode current peak observed when the cyclotron resonance is enhanced.

    摘要翻译： 提供了一种小型化的电磁波检测装置，其在任何环境中检测从微波到红外区域的波长。 电子从包括冷阴极和栅电极的电子发射装置进行场发射2.发射电子的行进长度的螺旋运动和延长通过磁场施加装置施加的正交磁场而增强，同时电子被吸引到 阳极。 当由正交磁场的磁通密度确定的角回波共振频率ω和要测量的电磁波的角频率ωf相互一致时，通过回旋加速器共振增强的电子被加速。 加速的电子与稀释气体分子碰撞并解离，产生倍增的离子对，然后由阴极和阳极捕获。 通过检测当回旋加速器共振增强时观察到的阳极电流峰值，从回旋共振的角频率ωc测量电磁波的波长。

    Printing column number limiting device
    8.
    发明授权
    Printing column number limiting device 失效
    打印列号限制装置

    公开(公告)号：US4236447A

    公开(公告)日：1980-12-02

    申请号：US950109

    申请日：1978-10-10

    申请人： Kazuo Matsuzaki ,  Shigenobu Katagiri ,  Hiroshige Nakano

    发明人： Kazuo Matsuzaki ,  Shigenobu Katagiri ,  Hiroshige Nakano

    IPC分类号： B41J9/46 ,  B41J1/20 ,  B41J29/20 ,  G06K15/00 ,  G06K15/08

    CPC分类号： B41J1/20

    摘要： A device for limiting the number of printing columns in a printer in which a group of printing data codes transferred from a data source are successively compared with a group of type codes which are determined in correspondence to the instantaneous positions of type on a type carrier, so that a type in a place where a printing data code coincides with a type code is printed. The device comprises a reversible counter adapted to subject a coincidence signal relating to said printing data code and type code and a printing completion signal for each place to addition and subtraction, respectively, so that when the count value of the reversible counter reaches a predetermined value, printing for further places is inhibited.

    摘要翻译： 一种用于限制打印机中打印列数量的装置，其中从数据源传送的一组打印数据代码被连续地与与类型载体上的类型的瞬时位置相对应地确定的一组类型代码进行比较， 使得打印数据代码与类型代码一致的地方的类型被打印。 该装置包括可逆计数器，其适于将与所述打印数据代码和类型代码相关的一致信号和每个地方的打印完成信号分别对加法和减法进行加法运算，使得当可逆计数器的计数值达到预定值时 ，禁止进一步打印。