Methods and systems for point of use removal of sacrificial material

    公开(公告)号:US09852919B2

    公开(公告)日:2017-12-26

    申请号:US14676697

    申请日:2015-04-01

    CPC classification number: H01L21/31105 G01N27/4145 H01L21/31144

    Abstract: A method of manufacturing a sensor, the method including forming an array of chemically-sensitive field effect transistors (chemFETs), depositing a dielectric layer over the chemFETs in the array, depositing a protective layer over the dielectric layer, etching the dielectric layer and the protective layer to form cavities corresponding to sensing surfaces of the chemFETs, and removing the protective layer. The method further includes, etching the dielectric layer and the protective layer together to form cavities corresponding to sensing surfaces of the chemFETs. The protective layer is at least one of a polymer, photoresist material, noble metal, copper oxide, and zinc oxide. The protective protective layer is removed using at least one of sodium hydroxide, organic solvent, aqua regia, ammonium carbonate, hydrochloric acid, acetic acid, and phosphoric acid.

    Methods for manufacturing well structures for low-noise chemical sensors

    公开(公告)号:US09841398B2

    公开(公告)日:2017-12-12

    申请号:US13736566

    申请日:2013-01-08

    CPC classification number: G01N27/414 G01N27/4145 G01N27/4148

    Abstract: In one implementation, a method for manufacturing a chemical detection device is described. The method includes forming a chemical sensor having a sensing surface. A dielectric material is deposited on the sensing surface. A first etch process is performed to partially etch the dielectric material to define an opening over the sensing surface and leave remaining dielectric material on the sensing surface. An etch protect material is formed on a sidewall of the opening. A second etch process is then performed to selectively etch the remaining dielectric material using the etch protect material as an etch mask, thereby exposing the sensing surface.

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