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公开(公告)号：US20230249978A1
公开(公告)日：2023-08-10
申请号：US18096602
申请日：2023-01-13
Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
Inventor： Brian L. Chaloux , James A. Ridenour , Albert Epshteyn
IPC: C01B35/12
CPC classification number: C01B35/12
Abstract: A method of preparing borosulfate materials avoids the need for fuming sulfuric acid, also known as oleum. Instead, B(OH)3 present in solution in concentrated sulfuric acid at 5% to 15% by weight is reacted with a cation source at 100-250° C. under dynamic vacuum while in connection with a receiving vessel comprising a desiccant and separate from the reaction vessel, thereby causing formation of a borosulfate material in the reaction vessel while eliminated water is collected in the receiving vessel.
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32.发明授权公开(公告)号：US11719634B2
公开(公告)日：2023-08-08
申请号：US17407274
申请日：2021-08-20
Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
Inventor： Jerry R. Meyer , Igor Vurgaftman , Chadwick Lawrence Canedy , William W. Bewley , Chul Soo Kim , Charles D. Merritt , Michael V. Warren , R. Joseph Weiblen , Mijin Kim
IPC: G01N21/59 , H01S5/028 , H01S5/10 , H01S5/125 , H01S5/34 , H01S5/343 , H01S5/042 , H01S5/20 , H01S5/02 , H01S5/026 , G02B6/10 , G01N21/27 , G01N21/25 , G01J3/18 , G01J3/28 , H01S5/22 , H01S5/06 , H01S5/062
CPC classification number: G01N21/59 , G01J3/1895 , G01J3/2803 , G01N21/255 , G01N21/27 , G02B6/102 , H01S5/0215 , H01S5/0262 , H01S5/0287 , H01S5/0421 , H01S5/101 , H01S5/125 , H01S5/2063 , H01S5/2206 , H01S5/3402 , H01S5/343 , G01N2201/0612 , H01S5/062 , H01S5/0612
Abstract: Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission.
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公开(公告)号：US20230242396A1
公开(公告)日：2023-08-03
申请号：US18161009
申请日：2023-01-27
Applicant: The Goverment of the United States of America, as represented by the Secretary of the Navy
Inventor： Travis G. Novak , Debra R. Rolison , Paul A. DeSario
CPC classification number: C01B3/16 , B01J23/72 , B01J23/10 , B01J35/0013 , B01J35/0066 , B01J12/007 , B01J19/24 , B01J19/0013 , H01M8/0612 , C01B2203/0283 , C01B2203/1076 , C01B2203/1082 , C01B2203/066 , H01M2008/1095
Abstract: A method and apparatus for: providing a ceria aerogel and copper nanoparticle catalyst, flowing a hydrogen, carbon monoxide, and water vapor source gas from an inlet into contact with the catalyst to produce a product gas, and flowing the product gas to an outlet. The concentration of carbon monoxide in the product gas is no more than 50% of the concentration of carbon monoxide in the source gas. The concentration of hydrogen in the product gas is no less than 90% of the concentration of hydrogen in the source gas.
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34.发明授权公开(公告)号：US11705535B2
公开(公告)日：2023-07-18
申请号：US16919024
申请日：2020-07-01
Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
Inventor： Berend T. Jonker , Matthew R. Rosenberger , Hsun-Jen Chuang , Joshua R. Hendrickson , Chandriker Kavir Dass
CPC classification number: H01L33/06 , B82Y20/00 , B82Y40/00 , G01Q60/16 , G01Q60/38 , G01Q80/00 , Y10S977/856
Abstract: A nano-indent process for creating a single photon emitter in a two-dimensional materials platform comprising the steps of providing a substrate, providing a layer of polymer, providing a layer of two-dimensional material, utilizing a proximal probe, applying mechanical stress to the layer of two-dimensional material and to the layer of polymer, deforming the layer of two-dimensional material and the layer of polymer, and forming a nano-indent in the two-dimensional material. A single photon emitter in a two-dimensional materials platform comprising a substrate, a deformable polymer film, a two-dimensional material, and a nano-indent in the two-dimensional material.
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公开(公告)号：US11702622B2
公开(公告)日：2023-07-18
申请号：US16999174
申请日：2020-08-21
Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
Inventor： Marc P. Raphael , Wonmo Kang
Abstract: A system and method for studying cell injury mechanisms by applying biologically relevant mechanical impact to in vitro cell culture are disclosed. This approach is for maintaining consistent in vitro conditions during experiments, accommodating multiple cell populations, and monitoring each in real-time while achieving amplitude and time scale of input acceleration that mimic blunt injury cases. These multiplexed, environmental control capabilities enable characterizing the relationships between mechanical impact and cell injury in multivariate biological systems.
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Patent Agency Ranking
公开(公告)号：US20230208516A1
公开(公告)日：2023-06-29
申请号：US18113500
申请日：2023-02-23
Applicant: The Regents of the University of California , The Government of the United States of America, as Represented by the Secretary of the Navy
Inventor： Keith Corzine , Todd Weatherford , Matthew Porter
IPC: H04B10/071 , G01J3/28 , H04B10/80 , H01L33/32 , G02B6/12
CPC classification number: H04B10/071 , G01J3/28 , H04B10/801 , H01L33/32 , G02B6/12007
Abstract: An optically-monitored and/or optically-controlled electronic device is described. The device includes at least one of a semiconductor transistor or a semiconductor diode. An optical detector is configured to detect light emitted by the at least one of the semiconductor transistor or the semiconductor diode during operation. A signal processor is configured to communicate with the optical detector to receive information regarding the light detected. The signal processor is further configured to provide information concerning at least one of an electrical current flowing in, a temperature of, or a condition of the at least one of the semiconductor transistor or the semiconductor diode during operation.
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公开(公告)号：US20230200244A1
公开(公告)日：2023-06-22
申请号：US18061012
申请日：2022-12-02
Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
Inventor： Boris N. Feigelson , Kevin P. Anderson , Benjamin L. Greenberg , James A. Wollmershauser , Alan G. Jacobs
IPC: H10N10/857 , H10N10/01 , C04B35/117 , C04B35/488 , C04B35/628 , C04B35/64
CPC classification number: H10N10/857 , C04B35/64 , C04B35/117 , C04B35/488 , C04B35/62813 , C04B35/62823 , C04B35/62884 , H10N10/01 , C04B2235/428 , C04B2235/3217 , C04B2235/3244 , C04B2235/5445 , C04B2235/5454 , C04B2235/9607
Abstract: Thermoelectric (TE) nanocomposite material that includes at least one component consisting of nanocrystals. A TE nanocomposite material in accordance with the present invention can include, but is not limited to, multiple nanocrystalline structures, nanocrystal networks or partial networks, or multi-component materials, with some components forming connected interpenetrating networks including nanocrystalline networks. The TE nanocomposite material can be in the form of a bulk solid having semiconductor nanocrystallites that form an electrically conductive network within the material. In other embodiments, the TE nanocomposite material can be a nanocomposite thermoelectric material having one network of p-type or n-type semiconductor domains and a low thermal conductivity semiconductor or dielectric network or domains separating the p-type or n-type domains that provides efficient phonon scattering to reduce thermal conductivity while maintaining the electrical properties of the p-type or n-type semiconductor.
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公开(公告)号：US20230200243A1
公开(公告)日：2023-06-22
申请号：US18061007
申请日：2022-12-02
Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
Inventor： Boris N. Feigelson , Kevin P. Anderson , Benjamin L. Greenberg , James A. Wollmershauser , Alan G. Jacobs
CPC classification number: H10N10/857 , C09C1/28 , C09C3/006 , C09C3/041 , C09C3/043 , C09C3/063 , H10N10/01 , C01P2002/60 , C01P2002/88 , C01P2004/64 , C01P2006/32 , C01P2006/40
Abstract: Thermoelectric (TE) nanocomposite material that includes at least one component consisting of nanocrystals. A TE nanocomposite material in accordance with the present invention can include, but is not limited to, multiple nanocrystalline structures, nanocrystal networks or partial networks, or multi-component materials, with some components forming connected interpenetrating networks including nanocrystalline networks. The TE nanocomposite material can be in the form of a bulk solid having semiconductor nanocrystallites that form an electrically conductive network within the material. In other embodiments, the TE nanocomposite material can be a nanocomposite thermoelectric material having one network of p-type or n-type semiconductor domains and a low thermal conductivity semiconductor or dielectric network or domains separating the p-type or n-type domains that provides efficient phonon scattering to reduce thermal conductivity while maintaining the electrical properties of the p-type or n-type semiconductor.
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公开(公告)号：US20230197534A1
公开(公告)日：2023-06-22
申请号：US18052654
申请日：2022-11-04
Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
Inventor： Michael A. Mastro , James Gallagher , Travis J. Anderson
IPC: H01L21/66 , G06T7/00 , G06N3/0442 , G06N3/0464
CPC classification number: H01L22/12 , G06N3/0442 , G06N3/0464 , G06T7/001 , G06T2207/20084 , G06T2207/30148
Abstract: A computer-implemented method for evaluating a semiconductor wafer. In accordance with the present invention, using a properly designed neural network, the computer can take image data regarding the wafer at issue, plus image and electrical data regarding a prior wafer and devices fabricated on the prior wafer, to find relations to and between structural features, both known and previously unidentified, that can degrade the performance of devices fabricated on the wafer and/or can reduce the device yield of the wafer.
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40.发明公开公开(公告)号：US20230197454A1
公开(公告)日：2023-06-22
申请号：US17714204
申请日：2022-04-06
Inventor： Boris N. Feigelson , Alan G. Jacobs
IPC: H01L21/265 , H01L29/20 , H01L29/207 , H01L29/24
CPC classification number: H01L21/26546 , H01L29/24 , H01L29/207 , H01L29/2003
Abstract: Methods for efficient doping of wide-bandgap (WBG) and ultrawide-bandgap (UWBG) semiconductors by implantation, and WBG and UWBG semiconductors made using the disclosed methods. A p-type semiconductor region is formed by implanting specified acceptor and donor co-dopant atoms in a predetermined ratio, e.g., two acceptors to one donor (ADA), into the semiconductor lattice. An n-type type semiconductor region is by implanting specified donor and acceptor co-dopant atoms in a predetermined ratio, e.g., two donors to one acceptor (DAD), into the semiconductor lattice. Compensator atoms are also implanted into the lattice to complete formula units in the crystal lattice structure and preserve the stoichiometry of the semiconductor material. The doped material is then annealed to activate the dopants and repair any damage to the lattice that might have occurred during implantation.
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