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公开(公告)号:US12113692B2
公开(公告)日:2024-10-08
申请号:US17958796
申请日:2022-10-03
申请人: SK hynix Inc.
发明人: In Seok Kong , Ki Yong Choi , Dong Seok Kim , Sung Mook Kim , Se Won Kim , Joo Won Oh , Keun Jin Chang
IPC分类号: H04L43/08 , H04L43/087
CPC分类号: H04L43/087
摘要: A data transmission circuit may include a plurality of data transmission lines configured to transmit a victim data signal through a victim data transmission line, and transmit an adjacent data signal through an adjacent data transmission line disposed adjacent to the victim data transmission line; and a data input/output circuit configured to control a reference voltage level reflected into the victim data signal on the basis of data pattern information of the adjacent data signal, and compare the victim data signal to the reference voltage level and output the comparison result.
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公开(公告)号:US12113085B2
公开(公告)日:2024-10-08
申请号:US17559304
申请日:2021-12-22
申请人: SK hynix Inc.
发明人: Jae Hyung Jang
IPC分类号: H01L27/146
CPC分类号: H01L27/1463
摘要: An image sensing device includes a plurality of unit pixels, each of which includes a plurality of sub-pixels. Each of the unit pixels is structured to respond to incident light to produce photocharges indicative of detected incident light and includes sub-pixels. Each sub-pixel includes a control region configured to generate, within a substrate in which the sub-pixels are disposed, a current that carries the photocharges, a detection region spaced from the control region and configured to capture the photocharges carried by the current, a plurality of first isolation portions disposed between two adjacent sub-pixels, a second isolation portion disposed to surround the sub-pixels, and a voltage applying region disposed at a center portion of the unit pixel and configured to receive a first voltage.
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公开(公告)号:US12113018B2
公开(公告)日:2024-10-08
申请号:US18192322
申请日:2023-03-29
申请人: SK hynix Inc.
发明人: Dong Hyuk Kim , Sung Lae Oh , Tae Sung Park , Soo Nam Jung
IPC分类号: H01L23/528 , G11C7/18 , H01L23/522 , H01L23/535 , H10B41/20 , H10B41/41 , H10B43/20 , H10B43/40
CPC分类号: H01L23/528 , G11C7/18 , H01L23/5226 , H01L23/535 , H10B41/20 , H10B41/41 , H10B43/20 , H10B43/40
摘要: A semiconductor device includes a first connection pattern; a bit line disposed over the first connection pattern in a vertical direction; and a bit-line contact pad, disposed in a first layer between the bit line and the first connection pattern to electrically couple the bit line to the first connection pattern, and formed as an island when viewed along the vertical direction. A predetermined number of the bit-line contact pads are spaced apart from each other by a predetermined distance in a first direction, when viewed along the vertical direction.
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公开(公告)号:US12112041B2
公开(公告)日:2024-10-08
申请号:US17950528
申请日:2022-09-22
申请人: SK hynix Inc.
发明人: Fan Zhang , Meysam Asadi , Haobo Wang
CPC分类号: G06F3/0611 , G06F3/0659 , G06F3/0679 , H03M13/1108 , H03M13/1111 , H03M13/1128
摘要: Devices, systems, and methods for reducing a latency of a decoder in a non-volatile memory are described. An example method includes receiving a noisy codeword that is based on a transmitted codeword generated from a low-density parity-check (LDPC) code, the LDPC code having an associated parity matrix comprising a plurality of columns of circulant matrices, performing a sorting operation that sorts the plurality of columns of circulant matrices in a descending order of a first quality metric to generate a plurality of sorted columns of circulant matrices, the first quality metric indicative of a number of errors in a corresponding column of circulant matrices, and iteratively processing the plurality of sorted columns of circulant matrices to determine a candidate version of the transmitted codeword.
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公开(公告)号:US20240334706A1
公开(公告)日:2024-10-03
申请号:US18471165
申请日:2023-09-20
申请人: SK hynix Inc.
发明人: Ki Deok KIM
摘要: A memory device, and a method of manufacturing the same, includes a well formed in a substrate. The memory device also includes an insulating liner layer formed between the well and the substrate, the insulating linear layer enclosing the well. The memory device further includes first, second, and third junction regions included in the well enclosed by the insulating liner layer, the first, second, and third junction regions being spaced apart from each other. The memory device additionally includes a gate pattern disposed on the well between the first and second junction regions and a blocking layer included in the well, the blocking layer disposed between the second and third junction regions.
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公开(公告)号:US20240332331A1
公开(公告)日:2024-10-03
申请号:US18508570
申请日:2023-11-14
申请人: SK hynix Inc.
发明人: Ho Young KWAK
IPC分类号: H01L27/146 , H01L23/538
CPC分类号: H01L27/1463 , H01L23/5384
摘要: Image sensing devices are disclosed. In an embodiment, an image sensing device includes a semiconductor substrate including a first surface and a second surface facing or opposite to the first surface, and structured to include a pixel region in which photoelectric conversion elements are formed to correspond to unit pixels and a pad region that is located outside the pixel region while having an electrode pad, a pixel isolation pattern disposed between the photoelectric conversion elements in the semiconductor substrate, and a pad isolation pattern disposed between the pixel region and the pad region in the semiconductor substrate.
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公开(公告)号:US20240332241A1
公开(公告)日:2024-10-03
申请号:US18744174
申请日:2024-06-14
申请人: SK hynix Inc.
发明人: Jin Woong KIM , Mi Seon LEE
IPC分类号: H01L23/00 , H01L25/00 , H01L25/065 , H01L25/18
CPC分类号: H01L24/30 , H01L24/04 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L25/0652 , H01L25/18 , H01L25/50 , H01L2224/0401 , H01L2224/04026 , H01L2224/05025 , H01L2224/05073 , H01L2224/05082 , H01L2224/05124 , H01L2224/05186 , H01L2224/05573 , H01L2224/05647 , H01L2224/05655 , H01L2224/1146 , H01L2224/13014 , H01L2224/13025 , H01L2224/13147 , H01L2224/14134 , H01L2224/14181 , H01L2224/16146 , H01L2224/16238 , H01L2224/17181 , H01L2224/2746 , H01L2224/29012 , H01L2224/29035 , H01L2224/29147 , H01L2224/29186 , H01L2224/3003 , H01L2224/30051 , H01L2224/3015 , H01L2224/30181 , H01L2224/30505 , H01L2224/30517 , H01L2224/30519 , H01L2224/32145 , H01L2224/73104 , H01L2224/73153 , H01L2224/81201 , H01L2224/83048 , H01L2224/83201 , H01L2924/04941 , H01L2924/05042
摘要: A semiconductor die stack includes a base die and core dies stacked over the base die. Each of the base die and the core dies include a semiconductor substrate, a front side passivation layer formed over a front side of the semiconductor substrate, a back side passivation layer over a back side of the semiconductor substrate, a through-via vertically penetrating the semiconductor substrate and the front side passivation layer, and a bump, a support pattern, and a bonding insulating layer formed over the front side passivation layer. Top surfaces of the bump, the support pattern, and the bonding insulating layer are co-planar. The bump is vertically aligned with the through-via. The support pattern is spaced apart from the through-via and the bump. The support pattern includes a plurality of first bars that extend in parallel with each other in a first direction and a plurality of second bars that extend in parallel with each other in a second direction.
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38.
公开(公告)号:US20240331788A1
公开(公告)日:2024-10-03
申请号:US18466561
申请日:2023-09-13
申请人: SK hynix Inc.
发明人: Nam Cheol JEON , Tae Un YOUN , Ho Jung KANG
IPC分类号: G11C29/10
CPC分类号: G11C29/10
摘要: Provided herein is a method of measuring a refractive index of a semiconductor memory device and a method of classifying a product group of a semiconductor memory device using the same. The method of measuring a refractive index of a semiconductor memory device includes measuring a positive breakdown voltage and a negative breakdown voltage of each of memory cells coupled to a selected word line. The method also includes checking a refractive index of a charge storage layer of each of the memory cells based on the measured positive breakdown voltage and the measured negative breakdown voltage.
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公开(公告)号:US20240331752A1
公开(公告)日:2024-10-03
申请号:US18737111
申请日:2024-06-07
申请人: SK hynix Inc.
发明人: Ki Hun KWON , Jae Il KIM
摘要: A semiconductor device may be provided. The semiconductor device may include a power-down signal generation circuit and a refresh signal generation circuit. The power-down signal generation circuit may be configured to generate a power-down signal which is enabled during a power-down operation period based on a multi-operation signal that is generated by decoding commands. The refresh signal generation circuit may be configured to generate a refresh signal which is enabled during a refresh operation period based on the multi-operation signal and an operation selection signal.
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40.
公开(公告)号:US20240331744A1
公开(公告)日:2024-10-03
申请号:US18461504
申请日:2023-09-06
申请人: SK hynix Inc.
发明人: Myung Jin JO
CPC分类号: G11C7/1069 , G11C7/1063 , G11C7/222
摘要: A memory system includes at least one memory chip including first information regarding internal configurations and operational characteristics, and a memory controller configured to perform a data input/output operation on the at least one memory chip. The memory controller includes a core-processor engaged with firmware configured to generate at least one first command for controlling an operation associated with the first information, a memory control sequence generator configured to generate at least one second command for controlling an operation performed on a memory chip which includes second information, and a core interface configured to, when the first information is included in the second information, handover, to the core-processor from the memory control sequence generator, a process for generating some of the at least one command associated with a part of the first information, the part not included in the second information.
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