METHOD FOR MAKING SEMICONDUCTOR DEVICE
    31.
    发明公开

    公开(公告)号:US20230326769A1

    公开(公告)日:2023-10-12

    申请号:US18184670

    申请日:2023-03-16

    CPC classification number: H01L21/565 H01L25/50

    Abstract: A method for making a semiconductor device is provided. The method includes: providing a package including: a substrate including a top surface and a bottom surface; a top electronic component mounted on the top surface of the substrate; at least one conductive pillar formed on the bottom surface of the substrate; and a protection layer attached on the bottom surface of the substrate and covering the at least one conductive pillar; providing a molding apparatus including a top chase and a bottom chase, wherein a molding material is held in the bottom chase; attaching the protection layer onto the top chase of the molding apparatus; and moving the top chase and the bottom chase close to each other to compress the molding material to cover the top electronic component on the top surface of the substrate, thereby forming a top encapsulation on the top surface of the substrate.

    Semiconductor device and method of integrating RF antenna interposer with semiconductor package

    公开(公告)号:US11735530B2

    公开(公告)日:2023-08-22

    申请号:US17445908

    申请日:2021-08-25

    CPC classification number: H01L23/5386 H01L25/18 H01L25/50 H01Q1/2283

    Abstract: A semiconductor device has a substrate and a first electrical component disposed over a first surface of the substrate. An RF antenna interposer is disposed over the substrate with the first electrical component connected to a first antenna disposed on a surface of the antenna interposer. An area of the antenna interposer is substantially the same as an area of the substrate. The first antenna disposed on the surface of the antenna interposer has a plurality of islands of conductive material. Alternatively, the first antenna disposed on the surface of the antenna interposer has a spiral shape of conductive material. A second antenna can be disposed on the surface of the antenna interposer connected to a second electrical component disposed over the substrate. A second electrical component can be disposed over a second surface of the substrate opposite the first surface of the substrate.

    Semiconductor Device and Method of Forming Dual-Sided Interconnect Structures in FO-WLCSP

    公开(公告)号:US20230096463A1

    公开(公告)日:2023-03-30

    申请号:US18060115

    申请日:2022-11-30

    Abstract: A semiconductor device has a substrate with first and second conductive layers formed over first and second opposing surfaces of the substrate. A plurality of bumps is formed over the substrate. A semiconductor die is mounted to the substrate between the bumps. An encapsulant is deposited over the substrate and semiconductor die. A portion of the bumps extends out from the encapsulant. A portion of the encapsulant is removed to expose the substrate. An interconnect structure is formed over the encapsulant and semiconductor die and electrically coupled to the bumps. A portion of the substrate can be removed to expose the first or second conductive layer. A portion of the substrate can be removed to expose the bumps. The substrate can be removed and a protection layer formed over the encapsulant and semiconductor die. A semiconductor package is disposed over the substrate and electrically connected to the substrate.

    Semiconductor Device and Method of Controlling Warpage During LAB

    公开(公告)号:US20230077132A1

    公开(公告)日:2023-03-09

    申请号:US17447001

    申请日:2021-09-07

    Abstract: A semiconductor device has a semiconductor die and a support tape disposed over a back surface of the semiconductor die opposite an active surface of the semiconductor die. A portion of the back surface of the semiconductor wafer is removed to reduce its thickness. The semiconductor die is part of a semiconductor wafer, and the wafer is singulated to provide the semiconductor die with the support tape disposed on the back surface of the semiconductor die. The support tape can be a polyimide tape. A dicing tape is disposed over the support tape. The semiconductor die is disposed over a substrate. A laser emission is projected onto the semiconductor die to bond the semiconductor die to the substrate. The support tape provides stress relief to avoid warpage of the semiconductor die during the laser emission. The support tape is removed from the back surface of the semiconductor die.

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