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119 条记录 (耗时 0.039 秒)

    SOLAR CELL AND METHOD FOR FABRICATING THE SAME
    31.
    发明申请
    SOLAR CELL AND METHOD FOR FABRICATING THE SAME 有权
    太阳能电池及其制造方法

    公开(公告)号：US20120273038A1

    公开(公告)日：2012-11-01

    申请号：US13547939

    申请日：2012-07-12

    申请人： Nobuaki Nagao ,  Takahiro Hamada ,  Akihiro Itoh

    发明人： Nobuaki Nagao ,  Takahiro Hamada ,  Akihiro Itoh

    IPC分类号： H01L31/0687 ,  H01L31/18

    CPC分类号： H01L31/0392 ,  C23C16/303 ,  C30B25/183 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02376 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L31/0693 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

    摘要： A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.

    摘要翻译： 太阳能电池包括石墨基板，形成在石墨基板上的厚度不小于20nm且不大于60nm的非晶碳层，形成在非晶碳层上的AlN层，n型氮化物半导体层 形成在AlN层上; 包括形成在所述n型氮化物半导体层上的氮化物半导体层的光吸收层; 形成在所述光吸收层上的p型氮化物半导体层; 电连接到p型氮化物半导体层的p侧电极; 和与n型氮化物半导体层电连接的n侧电极。 无定形碳层通过氧化石墨基材的表面而获得。

    SURFACE-EMISSION LASER DIODE AND FABRICATION PROCESS THEREOF
    32.
    发明申请
    SURFACE-EMISSION LASER DIODE AND FABRICATION PROCESS THEREOF 有权
    表面发射激光二极管及其制造工艺

    公开(公告)号：US20120263206A1

    公开(公告)日：2012-10-18

    申请号：US13459333

    申请日：2012-04-30

    申请人： Shunichi SATO ,  Akihiro Itoh ,  Naoto Jikutani

    发明人： Shunichi SATO ,  Akihiro Itoh ,  Naoto Jikutani

    IPC分类号： H01S5/34 ,  H04B10/04 ,  G03G15/04

    CPC分类号： H01S5/343 ,  H01S5/02284 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18347 ,  H01S5/18383 ,  H01S5/2205 ,  H01S5/423

    摘要： A surface-emission laser diode includes a GaAs substrate, a cavity region, and upper and lower reflectors provided at a top part and a bottom part of the cavity region, the upper reflector and/or the lower reflector including a semiconductor Bragg reflector, at least a part of the semiconductor distributed Bragg reflector includes a semiconductor layer containing Al, Ga and As as major components, there being provided, between the active layer and the semiconductor layer that contains Al, Ga and As as major components, a semiconductor layer containing Al, In and P as major components adjacent to the semiconductor layer that contains Al, Ga and As as major components, with an interface formed coincident to a location of a node of electric strength distribution.

    摘要翻译： 表面发射激光二极管包括GaAs衬底，空腔区域和设置在空腔区域的顶部和底部的上反射器和下反射器，上反射器和/或下反射器包括半导体布拉格反射器， 半导体分布布拉格反射器的至少一部分包括以Al，Ga和As为主要成分的半导体层，在有源层和含有Al，Ga和As作为主要成分的半导体层之间提供含有 Al，In和P作为与Al，Ga和As作为主要成分的半导体层相邻的主要成分，其界面与电强度分布的节点的位置一致。

    SINGLE-STRANDED NUCLEIC ACID MOLECULE FOR CONTROLLING GENE EXPRESSION
    34.
    发明申请
    SINGLE-STRANDED NUCLEIC ACID MOLECULE FOR CONTROLLING GENE EXPRESSION 有权
    用于控制基因表达的单链核酸分子

    公开(公告)号：US20120010271A1

    公开(公告)日：2012-01-12

    申请号：US13254150

    申请日：2011-07-08

    申请人： Tadaaki Ohgi ,  Hirotake Hayashi ,  Hisao Shirohzu ,  Tomohiro Hamasaki ,  Akihiro Itoh ,  Hiroshi Suzuki

    发明人： Tadaaki Ohgi ,  Hirotake Hayashi ,  Hisao Shirohzu ,  Tomohiro Hamasaki ,  Akihiro Itoh ,  Hiroshi Suzuki

    IPC分类号： A61K31/7088 ,  C12N5/00 ,  A61P43/00 ,  C07H21/04 ,  A61K31/7105 ,  A61K31/711 ,  C07H21/02 ,  C12N5/071

    CPC分类号： C12N15/113 ,  A61K31/7105 ,  A61K31/7115 ,  A61K31/712 ,  A61K31/7125 ,  C12N15/111 ,  C12N2310/14 ,  C12N2320/30 ,  C12N2330/51

    摘要： Provided is a novel nucleic acid molecule that can inhibit the expression of a gene and can be produces easily and efficiently. The nucleic acid molecule is a single-stranded nucleic acid molecule including an expression inhibitory sequence that inhibits expression of a target gene. The single-stranded nucleic acid molecule includes, in sequence from the 5′ side to the 3′ side: a 5′ side region (Xc); an inner region (Z); and a 3′ side region (Yc). The inner region (Z) is composed of an inner 5′ side region (X) and an inner 3′ side region (Y) that are linked to each other. The 5′ side region (Xc) is complementary to the inner 5′ side region (X). The 3′ side region (Yc) is complementary to the inner 3′ side region (Y). At least one of the inner region (Z), the 5′ side region (Xc), and the 3′ side region (Yc) includes the expression inhibitory sequence. According to this single-stranded nucleic acid molecule, it is possible to inhibit the expression of the target gene.

    摘要翻译： 提供了可以抑制基因表达并且可以容易且有效地产生的新型核酸分子。 核酸分子是包含抑制靶基因表达的表达抑制性序列的单链核酸分子。 单链核酸分子包括从5'侧到3'侧的顺序：5'侧区（Xc）; 内部区域（Z）; 和3'侧区域（Yc）。 内部区域（Z）由彼此连接的内部5'侧区域（X）和内部3'侧区域（Y）构成。 5'侧区域（Xc）与内部5'侧区域（X）互补。 3'侧区域（Yc）与内3'侧区域（Y）互补。 内部区域（Z），5'侧区域（Xc）和3'侧区域（Yc）中的至少一个包括表达抑制序列。 根据该单链核酸分子，可以抑制靶基因的表达。

    Semiconductor oxidation apparatus and method of producing semiconductor element
    36.
    发明授权
    Semiconductor oxidation apparatus and method of producing semiconductor element 有权
    半导体氧化装置及半导体元件的制造方法

    公开(公告)号：US07981700B2

    公开(公告)日：2011-07-19

    申请号：US10592213

    申请日：2006-02-13

    申请人： Shunichi Sato ,  Naoto Jikutani ,  Akihiro Itoh ,  Shinya Umemoto ,  Yoshiaki Zenno ,  Takatoshi Yamamoto

    发明人： Shunichi Sato ,  Naoto Jikutani ,  Akihiro Itoh ,  Shinya Umemoto ,  Yoshiaki Zenno ,  Takatoshi Yamamoto

    IPC分类号： H01L21/00 ,  G01R31/26 ,  H01L21/76

    CPC分类号： H01S5/18358 ,  H01S5/18313 ,  H01S5/2215

    摘要： A semiconductor oxidation apparatus is provided with a sealable oxidation chamber defined by walls, a base provided within the oxidation chamber and configured to support a semiconductor sample, a supply part configured to supply water vapor into the oxidation chamber to oxidize a specific portion of the semiconductor sample, a monitoring window provided in one of the walls of the oxidation chamber and disposed at a position capable of confronting the semiconductor sample supported on the base, a monitoring part provided outside the oxidation chamber and capable of confronting the semiconductor sample supported on the base via the monitoring window, and an adjusting part configured to adjust a distance between the base and the monitoring part.

    摘要翻译： 半导体氧化装置设置有由壁限定的可密封氧化室，设置在氧化室内并配置为支撑半导体样品的基座，配置成将水蒸气供应到氧化室中以供氧化半导体特定部分的供应部分 样品，设置在所述氧化室的一个壁中并设置在能够面对支撑在所述基底上的所述半导体样品的位置处的监测窗口，设置在所述氧化室外部并且能够面对所述基底上的所述半导体样品的监视部 以及配置为调整基座和监视部件之间的距离的调节部件。

    Method For Manufacturing Surface-Emitting Laser Device, Optical Scanner, Image Forming Apparatus, And Oxidation Apparatus
    37.
    发明申请
    Method For Manufacturing Surface-Emitting Laser Device, Optical Scanner, Image Forming Apparatus, And Oxidation Apparatus 有权
    制造表面发射激光装置，光学扫描仪，成像装置和氧化装置的方法

    公开(公告)号：US20100311194A1

    公开(公告)日：2010-12-09

    申请号：US12796217

    申请日：2010-06-08

    申请人： Toshihide SASAKI ,  Akihiro Itoh

    发明人： Toshihide SASAKI ,  Akihiro Itoh

    IPC分类号： H01L21/00 ,  B01J19/00 ,  G02B26/08

    CPC分类号： H01S5/18311 ,  G02B26/12 ,  H01S5/3202 ,  H01S5/423

    摘要： Disclosed is a method for manufacturing a surface-emitting laser device that emits laser light in a direction perpendicular to a substrate. The method includes manufacturing a laminated body in which a lower reflecting mirror, a resonator structure including an active layer, and an upper reflecting mirror including a selectively oxidized layer are laminated on the substrate; etching the laminated body from an upper surface to form a mesa structure having at least the selectively oxidized layer exposed at a side surface; and mounting the laminated body on a tray having a front surface shaped to follow a warpage of the laminated body at an oxidation temperature and selectively oxidizing the selectively oxidized layer from the side surface of the mesa structure, thereby generating a confinement structure in which a current passing region is surrounded by an oxide.

    摘要翻译： 公开了一种用于制造在垂直于基板的方向上发射激光的表面发射激光器件的方法。 该方法包括制造其中下反射镜，包括有源层的谐振器结构和包括选择性氧化层的上反射镜层叠在基板上的层叠体; 从上表面蚀刻层叠体以形成至少在侧表面露出的选择性氧化层的台面结构; 并将层叠体安装在具有成形为在氧化温度下跟随层叠体的翘曲的正面的托盘上，并且从台面结构的侧面选择性地氧化选择性氧化层，由此产生限制结构，其中电流 通过区域被氧化物包围。

    SURFACE-EMISSION LASER ARRAY, OPTICAL SCANNING APPARATUS AND IMAGE FORMING APPARATUS
    38.
    发明申请
    SURFACE-EMISSION LASER ARRAY, OPTICAL SCANNING APPARATUS AND IMAGE FORMING APPARATUS 有权
    表面发射激光阵列，光学扫描装置和图像形成装置

    公开(公告)号：US20100060712A1

    公开(公告)日：2010-03-11

    申请号：US11993406

    申请日：2007-04-27

    申请人： Shunichi Sato ,  Akihiro Itoh ,  Hiroyoshi Shouji ,  Yoshinori Hayashi ,  Daisuke Ichii ,  Kei Hara ,  Mitsumi Fujii

    发明人： Shunichi Sato ,  Akihiro Itoh ,  Hiroyoshi Shouji ,  Yoshinori Hayashi ,  Daisuke Ichii ,  Kei Hara ,  Mitsumi Fujii

    IPC分类号： B41J2/45 ,  H01S5/00 ,  G02B26/10 ,  B41J2/455

    CPC分类号： B41J2/45 ,  B41J2/473 ,  B82Y20/00 ,  G02B26/123 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/3432 ,  H01S5/423

    摘要： A surface-emission laser array comprises a plurality of surface-emission laser diode elements arranged in the form of a two-dimensional array, wherein a plurality of straight lines drawn perpendicularly to a straight line extending in a first direction from respective centers of the plurality of surface emission laser diode elements aligned in a second direction perpendicular to the first direction, are formed with generally equal interval in the first direction, the plurality of surface-emission laser diode elements are aligned in the first direction with an interval set to a reference value, and wherein the number of the surface-emission laser diode elements aligned in the first direction is smaller than the number of the surface-emission laser diode elements aligned in the second direction.

    摘要翻译： 表面发射激光器阵列包括以二维阵列的形式布置的多个表面发射激光二极管元件，其中垂直于从第一方向延伸的直线绘制的多条直线从多个 在与第一方向垂直的第二方向上排列的表面发射激光二极管元件在第一方向上以大致相等的间隔形成，多个表面发射激光二极管元件在第一方向上对准，间隔设置为基准 并且其中在所述第一方向上排列的所述表面发射激光二极管元件的数量小于在所述第二方向上排列的所述表面发射激光二极管元件的数量。