公开(公告)号：US11018631B2

公开(公告)日：2021-05-25

申请号：US16783223

申请日：2020-02-06

申请人： Cree, Inc.

发明人： Thomas J. Smith, Jr.

IPC分类号： H03F1/26 ,  H03F3/213 ,  H03F3/193 ,  H03F3/195 ,  H01L29/78 ,  H04B7/08 ,  H04B17/13 ,  H01L29/20

摘要： Monolithic microwave integrated circuits are provided that include a substrate, a transmit/receive selection device that is formed on the substrate, a high power amplifier formed on the substrate and coupled to a first RF port of the transmit/receive selection device, a low noise amplifier formed on the substrate and coupled to a second RF port of the transmit/receive selection device and a protection circuit that is coupled to a first control port of the transmit/receive selection device.

公开(公告)号：US11004808B2

公开(公告)日：2021-05-11

申请号：US15973276

申请日：2018-05-07

申请人： Cree, Inc.

发明人： Xikun Zhang ,  Dejiang Chang ,  Bill Agar ,  Michael Lefevre ,  Alexander Komposch

IPC分类号： H01L23/00 ,  H01L23/66 ,  H01L23/495 ,  H01L23/498 ,  H01L25/07 ,  H01L25/00 ,  H01L29/16

摘要： A multi-die package includes a thermally conductive flange, a first semiconductor die made of a first semiconductor material attached to the thermally conductive flange via a first die attach material, a second semiconductor die attached to the same thermally conductive flange as the first semiconductor die via a second die attach material, and leads attached to the thermally conductive flange or to an insulating member secured to the flange. The leads are configured to provide external electrical access to the first and second semiconductor dies. The second semiconductor die is made of a second semiconductor material different than the first semiconductor material. Additional multi-die package embodiments are described.

公开(公告)号：US10991861B2

公开(公告)日：2021-04-27

申请号：US15280438

申请日：2016-09-29

申请人： Cree, Inc.

发明人： Michael John Bergmann ,  Matthew Donofrio ,  Peter Scott Andrews ,  Colin Blakely ,  Troy Gould ,  Jack Vu

IPC分类号： H01L25/16 ,  H01L33/06 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/48 ,  H01L33/50 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62 ,  H01L25/075 ,  H01L33/32

摘要： Flip chip LEDs incorporate multi-layer reflectors and light transmissive substrates patterned along an internal surface adjacent to semiconductor layers. A multi-layer reflector may include a metal layer and a dielectric layer containing conductive vias. Portions of a multi-layer reflector may wrap around a LED mesa including an active region, while being covered with passivation material. A substrate patterned along an internal surface together with a multi-layer reflector enables reduction of optical losses. A light transmissive fillet material proximate to edge emitting surfaces of an emitter chip may enable adequate coverage with lumiphoric material. An emitter chip may be elevated with increased thickness of solder material and/or contacts, and may reduce luminous flux loss when reflective materials are present on a submount. Methods for coating emitter chips with lumiphoric material include one or more of angled spray coating, fillet formation prior to spray coating, stencil island coating, and releasable tape coating.

公开(公告)号：US10985294B2

公开(公告)日：2021-04-20

申请号：US16357949

申请日：2019-03-19

申请人： Cree, Inc.

发明人： Justin White

IPC分类号： H01L33/38 ,  H01L33/22 ,  H01L33/24 ,  H01L33/44 ,  H01L33/46 ,  H01L33/40

摘要： Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly contact structures for LED chips are disclosed. LED chips as disclosed herein may include contact structure arrangements that have reduced impact on areas of active LED structures within the LED chips. Electrical connections between an n-contact and an n-type layer may be arranged outside of a perimeter edge or a perimeter corner of the active LED structure. N-contact interconnect configurations are disclosed that form electrical connections between n-contacts and n-type layers of LED chips outside of lateral boundaries of the active LED structures. By electrically contacting n-type layers outside of the lateral boundaries of the active LED structures, LED chips are provided with improved current spreading and improved brightness.

公开(公告)号：US20210111279A1

公开(公告)日：2021-04-15

申请号：US16598646

申请日：2019-10-10

申请人： Cree, Inc.

发明人： Sei-Hyung Ryu

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L21/266

摘要： A semiconductor device includes a substrate, a drift layer, a well region, and a source region. The substrate has a first conductivity type. The drift layer has the first conductivity type and is on the substrate. The well region has a second conductivity type opposite the first conductivity type and provides a channel region. The source region is in the well region and has the first conductivity type. A doping concentration of the well region along a surface of the drift layer opposite the substrate is variable such that the well region includes a region of increased doping concentration at a distance from a junction between the source region and the well region.

公开(公告)号：US20210111254A1

公开(公告)日：2021-04-15

申请号：US16600825

申请日：2019-10-14

申请人： Cree, Inc.

发明人： Evan Jones ,  Terry Alcorn ,  Jia Guo ,  Fabian Radulescu ,  Scott Sheppard

IPC分类号： H01L29/40 ,  H01L29/778 ,  H01L29/66

摘要： A transistor includes a semiconductor layer structure, a source electrode and a drain electrode on the semiconductor layer structure, a gate on a surface of the semiconductor layer structure between the source electrode and the drain electrode, and a field plate. The field plate includes a first portion adjacent the gate and a second portion adjacent the source or drain electrode. The second portion of the field plate is farther from the surface of the semiconductor layer structure than the first portion of the field plate, and is closer to the surface of the semiconductor layer structure than an extended portion of the gate. Related devices and fabrication methods are also discussed.

公开(公告)号：US10957736B2

公开(公告)日：2021-03-23

申请号：US15918839

申请日：2018-03-12

申请人： Cree, Inc.

发明人： Aaron J. Francis ,  Jasper Sicat Cabalu ,  Colin Kelly Blakely

IPC分类号： H01L27/15 ,  H01L33/62 ,  H01L33/08 ,  H01L33/54

摘要： Light emitting diode (LED) components include a submount, at least one or more LED chip wirebonded on a first surface of the submount to electrical traces at the edges of the submount, and a molded encapsulant which is devoid of a curved lens or hemispherical lens and can have outer or lateral walls co-planar with exterior walls of the submount. An LED component can have a viewing angle that is greater than 125°. A method of providing an LED component includes providing a substantially flat submount, attaching one or more LED chip over a first surface of the submount, dispensing an encapsulant over the first surface of the submount over the LED chips, applying a press over the encapsulant to apply a heat and/or pressure to the encapsulant, and molding the encapsulant over the first surface of the submount.

公开(公告)号：US10950769B2

公开(公告)日：2021-03-16

申请号：US15432146

申请日：2017-02-14

申请人： Cree, Inc.

发明人： Michael John Bergmann ,  Colin Kelly Blakely ,  Arthur Fong-Yuen Pun ,  Jesse Colin Reiherzer

IPC分类号： H01L33/62 ,  B23K1/00 ,  H01L33/64 ,  B23K35/26 ,  B23K35/30 ,  C22C13/00 ,  C22C19/03 ,  H01L25/075 ,  H01L33/36 ,  H01L33/48 ,  H01L33/38 ,  H01L33/20

摘要： A Light Emitting Diode (LED) component includes a lead frame and an LED that is electrically connected to the lead frame without wire bonds, using a solder layer. The lead frame includes a metal anode pad, a metal cathode pad and a plastic cup. The LED die includes LED die anode and cathode contacts with a solder layer on them. The metal anode pad, metal cathode pad, plastic cup and/or the solder layer are configured to facilitate the direct die attach of the LED die to the lead frame without wire bonds. Related fabrication methods are also described.

公开(公告)号：US20210057390A1

公开(公告)日：2021-02-25

申请号：US17092939

申请日：2020-11-09

申请人： Cree, Inc.

发明人： Troy Gould ,  Colin Kelly Blakely ,  Jesse Colin Reiherzer ,  Joseph G. Clark

IPC分类号： H01L25/075 ,  H01L33/50 ,  H01L33/54 ,  H01L33/58 ,  H01L33/62 ,  H01L33/60

摘要： Light emitting diode (LED) devices and methods. An example apparatus can include a substrate, one or more LEDs, light-transmissive encapsulation material, and a reflective material covering a portion of the encapsulation material to form a defined opening. The opening allows light emitted from an LED to pass through in a prescribed manner. In some embodiments, the apparatus can be subsequently treated to modify the surface having the opening. In other embodiments, the reflective material can be disposed on a lateral surface of the encapsulation material to reflect light in a desired direction.

公开(公告)号：US20210043821A1

公开(公告)日：2021-02-11

申请号：US17081522

申请日：2020-10-27

申请人： Cree, Inc.

发明人： Christopher P. Hussell

IPC分类号： H01L33/62 ,  H01L27/15 ,  H05B45/325

摘要： Synchronization for light emitting diode (LED) pixels in an LED display is provided so that one or more actions of all LED pixels are able to be initiated at the same time, or within a millisecond. LED displays and corresponding systems may include a controller that is configured for sending communication signals to one or more strings of LED pixels. Active electrical elements within each LED pixel may be configured to receive the communication signals, generate corresponding synchronization signals, and respond in a manner that is coordinated with all other LED pixels in a particular LED display. Failure mitigation of LED pixel failures within an LED string is provided where the controller is configured with bidirectional communication ports for communication with the LED string. In a failure mitigation process, the bidirectional communication ports may switch directions to provide communication signals to both sides of an LED string.