公开(公告)号：US20050266764A1

公开(公告)日：2005-12-01

申请号：US11139664

申请日：2005-05-31

Applicant: Won-Seok Kim ,  Gi-Young Kim ,  Sang-Hyun Lee ,  Jung-Na Heo ,  Hyun-Jung Lee

Inventor： Won-Seok Kim ,  Gi-Young Kim ,  Sang-Hyun Lee ,  Jung-Na Heo ,  Hyun-Jung Lee

IPC: H01J1/30 ,  H01J9/00 ,  H01J9/02

CPC classification number: B82Y10/00 ,  H01J9/025 ,  H01J2201/30469

Abstract: A method of stabilizing a field emitter includes performing plasma treatment on carbon nanotubes of the field emitter. The plasma treatment evens the surface of the carbon nanotubes, stabilizing the current density of the carbon nanotubes and increasing the durability of the field emitter.

Abstract translation: 稳定场致发射体的方法包括对场致发射体的碳纳米管进行等离子体处理。 等离子体处理使碳纳米管的表面变得脆弱，稳定了碳纳米管的电流密度，增加了场致发射体的耐久性。

公开(公告)号：US20240054512A1

公开(公告)日：2024-02-15

申请号：US18492370

申请日：2023-10-23

Applicant: Hyun Jung LEE

Inventor： Hyun Jung LEE

IPC: G06Q30/0204 ,  G06N3/08

CPC classification number: G06Q30/0204 ,  G06N3/08

Abstract: The present disclosure relates to a method for predicting demand using a visual schema of a product, a device therefor, and a computer program therefor. The demand predicting method includes the operations of: creating visual schemas in which attributes of a product are digitized; analyzing the visual schemas and creating visual schema analysis data which are data relating to the attributes of the product; creating prediction data which are data obtained as a result of demand prediction analysis by attributes of the product using the visual schema analysis data; and creating visual narrative data expressing the prediction data into correlation between products or customers, and describing demand prediction.

公开(公告)号：US20200224952A1

公开(公告)日：2020-07-16

申请号：US16552572

申请日：2019-08-27

Applicant: Hyun-Jung LEE

Inventor： Hyun-Jung LEE

IPC: F25D17/02 ,  A47C21/04 ,  F25D19/00 ,  F25D31/00

Abstract: The present invention relates to a circulator for a cooling mat, whereby water is brought into contact with a frozen refrigerant, cooled thereby, and then circulated through a pipe of the mat, such that a cooling effect can be provided to a user in contact with the mat by using the circulator having a simple structure.

公开(公告)号：US10155763B2

公开(公告)日：2018-12-18

申请号：US13548785

申请日：2012-07-13

Applicant: Ju Young Lee ,  Keun-Ho Ryu ,  Jae-Sun Kim ,  Yong-Hyuk Kim ,  Dong-Chul Shin ,  Bong-yong Lee ,  Sang-hwan Kang ,  Hyun-Jung Lee ,  Hoechul Jung ,  Young Ah Shin ,  Euisun Park ,  Jaeseung Ahn ,  Hun-Taek Kim ,  Je Ho Ryu

Inventor： Ju Young Lee ,  Keun-Ho Ryu ,  Jae-Sun Kim ,  Yong-Hyuk Kim ,  Dong-Chul Shin ,  Bong-yong Lee ,  Sang-hwan Kang ,  Hyun-Jung Lee ,  Hoechul Jung ,  Young Ah Shin ,  Euisun Park ,  Jaeseung Ahn ,  Hun-Taek Kim ,  Je Ho Ryu

IPC: C07D487/04 ,  C07D519/00

Abstract: The present invention provides a novel 2-pyridyl substituted imidazole derivative, or a pharmaceutically acceptable salt or solvate thereof, which selectively inhibits the transforming growth factor-β (TGF-β) type I receptor (ALK5) and/or the activin type I receptor (ALK4); a pharmaceutical composition comprising same as an active ingredient; and a use of the 2-pyridyl substituted imidazole derivative for the manufacture of a medicament for preventing or treating a disease mediated by ALK5 and/or ALK4 receptors in a mammal.

公开(公告)号：US09577043B2

公开(公告)日：2017-02-21

申请号：US14826174

申请日：2015-08-13

Applicant: Jongryeol Yoo ,  Hyun Jung Lee ,  Sunjung Kim ,  Seung Hun Lee ,  Eunhye Choi

Inventor： Jongryeol Yoo ,  Hyun Jung Lee ,  Sunjung Kim ,  Seung Hun Lee ,  Eunhye Choi

IPC: H01L29/10 ,  H01L29/165 ,  H01L29/78 ,  H01L21/8238 ,  H01L27/092 ,  H01L27/088 ,  H01L21/8234

CPC classification number: H01L29/1054 ,  H01L21/823412 ,  H01L21/823814 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/165 ,  H01L29/7849

Abstract: A semiconductor device includes a buffer layer on a semiconductor substrate including first and second regions, a first channel layer on the buffer layer of the first region, a second channel layer on the buffer layer of the second region, and a spacer layer between the second channel layer and the buffer layer. The buffer layer, the first and second channel layers, and the spacer layer are formed of semiconductor materials including germanium. A germanium concentration difference between the first and second channel layers is greater than a germanium concentration difference between the buffer layer and the second channel layer. The spacer layer has a germanium concentration gradient.

Abstract translation: 半导体器件包括在半导体衬底上的包括第一和第二区域的缓冲层，第一区域的缓冲层上的第一沟道层，第二区域的缓冲层上的第二沟道层以及第二区域之间的间隔层 通道层和缓冲层。 缓冲层，第一和第二沟道层以及间隔层由包括锗的半导体材料形成。 第一和第二沟道层之间的锗浓度差大于缓冲层和第二沟道层之间的锗浓度差。 间隔层具有锗浓度梯度。

公开(公告)号：US20160218181A1

公开(公告)日：2016-07-28

申请号：US14968049

申请日：2015-12-14

Applicant: Moon Seung Yang ,  Eun Hye Choi ,  Sun Jung Kim ,  Seung Hun Lee ,  Hyun-Jung Lee

Inventor： Moon Seung Yang ,  Eun Hye Choi ,  Sun Jung Kim ,  Seung Hun Lee ,  Hyun-Jung Lee

IPC: H01L29/10 ,  H01L29/417 ,  H01L29/161 ,  H01L29/78

CPC classification number: H01L29/1054 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02532 ,  H01L29/161 ,  H01L29/78 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor substrate and a semiconductor device are provided. The semiconductor substrate includes a base substrate, a first silicon germanium layer on the base substrate and a second silicon germanium layer on the first silicon germanium layer. A germanium fraction of the second silicon germanium layer decreases in the direction away from the base substrate, and a germanium fraction of a lowermost part of the second silicon germanium layer is greater than a germanium fraction of an uppermost part of the first silicon germanium layer.

Abstract translation: 提供半导体衬底和半导体器件。 半导体衬底包括基底衬底，在基底衬底上的第一硅锗层和第一硅锗层上的第二硅锗层。 第二硅锗层的锗部分在远离基底的方向上减小，并且第二硅锗层的最下部分的锗部分大于第一硅锗层的最上部的锗部分。

公开(公告)号：US09318379B2

公开(公告)日：2016-04-19

申请号：US14939439

申请日：2015-11-12

Applicant: Eun-Ok Lee ,  Nam-Gun Kim ,  Gyuhwan Oh ,  Heesook Park ,  Hyun-Jung Lee ,  Kyungho Jang

Inventor： Eun-Ok Lee ,  Nam-Gun Kim ,  Gyuhwan Oh ,  Heesook Park ,  Hyun-Jung Lee ,  Kyungho Jang

IPC: H01L21/768

CPC classification number: H01L23/5329 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76889 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/53209 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A spacer covering a sidewall of a contact plug includes a relatively more damaged first portion and a relatively less damaged second portion. An interface of the first and second portions of the spacer is spaced apart from a metal silicide layer of the contact plug. Thus reliability of the semiconductor device may be improved. Related fabrication methods are also described.

Abstract translation: 覆盖接触塞的侧壁的间隔件包括相对更受损的第一部分和相对较少受损的第二部分。 间隔物的第一和第二部分的界面与接触塞的金属硅化物层间隔开。 因此，可以提高半导体器件的可靠性。 还描述了相关的制造方法。

公开(公告)号：US09096571B2

公开(公告)日：2015-08-04

申请号：US13696400

申请日：2011-05-04

Applicant: Je Ho Ryu ,  Shin Ae Kim ,  Keun Ho Ryu ,  Jae Sun Kim ,  Nam Ho Kim ,  Hye Young Han ,  Yong Hyuk Kim ,  Won-No Youn ,  Yoon-Jung Lee ,  Hyun Joo Son ,  Bong-Yong Lee ,  Sung Hoon Park ,  Ju Young Lee ,  Hyun Jung Lee ,  Hoe Chul Jung ,  Young Ah Shin ,  Jung A Lee ,  Bo Ram Lee ,  Joon Ho Sa

Inventor： Je Ho Ryu ,  Shin Ae Kim ,  Keun Ho Ryu ,  Jae Sun Kim ,  Nam Ho Kim ,  Hye Young Han ,  Yong Hyuk Kim ,  Won-No Youn ,  Yoon-Jung Lee ,  Hyun Joo Son ,  Bong-Yong Lee ,  Sung Hoon Park ,  Ju Young Lee ,  Hyun Jung Lee ,  Hoe Chul Jung ,  Young Ah Shin ,  Jung A Lee ,  Bo Ram Lee ,  Joon Ho Sa

IPC: A61K31/47 ,  A61K31/55 ,  A61K31/445 ,  A61K31/497 ,  C07D401/04 ,  C07D401/14 ,  C07D403/04 ,  C07D403/14 ,  C07D405/14 ,  C07D213/81 ,  C07D401/06 ,  C07D401/12 ,  C07D405/12 ,  C07D239/557

CPC classification number: C07D401/04 ,  C07D213/81 ,  C07D239/557 ,  C07D401/06 ,  C07D401/12 ,  C07D401/14 ,  C07D403/04 ,  C07D403/14 ,  C07D405/12 ,  C07D405/14

Abstract: Provided are picolinamide and pyrimidine-4-carboxamide compounds, a method for preparing the same, a pharmaceutical composition containing the same, and a medical use using the compound as an agent for preventing, regulating, and treating diseases related to regulation of glucocorticoids by using selective inhibitory activity of the compound for an 11β-HSD1 enzyme. The picolinamide and pyrimidine-4-carboxamide compounds of the present invention are selective inhibitors of human-derived 11β-HSD1 enzymes, and are useful in an agent for preventing, regulating, and treating diseases related to glucocorticoid regulation in which human-derived 11β-HSD1 enzymes are involved, for example, metabolic syndromes such as, type 1 and type 2 diabetes, diabetes later complications, latent autoimmune diabetes adult (LADA), insulin tolerance syndromes, obesity, impaired glucose tolerance (IGT), impaired fasting glucose (IFG), damaged glucose tolerance, dyslipidemia, atherosclerosis, hypertension, etc.

Abstract translation: 提供了吡啶酰胺和嘧啶-4-甲酰胺化合物，其制备方法，含有该组合物的药物组合物，以及使用该化合物作为预防，调节和治疗与糖皮质激素调节有关的疾病的药物的用途 该化合物对于11-bgr-HSD1酶的选择性抑制活性。 本发明的吡啶酰胺和嘧啶-4-甲酰胺化合物是人源性11β-HSD1酶的选择性抑制剂，可用于预防，调节和治疗糖皮质激素调节相关疾病的药剂，其中人源性11β- ; -HSD1酶涉及例如代谢综合征，如1型和2型糖尿病，糖尿病后期并发症，潜伏性自身免疫性糖尿病成人（LADA），胰岛素耐受综合征，肥胖，葡萄糖耐量异常（IGT），空腹血糖受损 （IFG），葡萄糖耐量受损，血脂异常，动脉粥样硬化，高血压等。

公开(公告)号：US08772897B2

公开(公告)日：2014-07-08

申请号：US13049783

申请日：2011-03-16

Applicant: Ki-Won Kim ,  Kap-Soo Yoon ,  Woo-Geun Lee ,  Yeong-Keun Kwon ,  Hye-Young Ryu ,  Jin-Won Lee ,  Hyun-Jung Lee

Inventor： Ki-Won Kim ,  Kap-Soo Yoon ,  Woo-Geun Lee ,  Yeong-Keun Kwon ,  Hye-Young Ryu ,  Jin-Won Lee ,  Hyun-Jung Lee

IPC: H01L27/146

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/78645 ,  H01L29/78648

Abstract: A thin-film transistor includes a semiconductor pattern, a first gate electrode, a source electrode, a drain electrode and a second gate electrode. The semiconductor pattern is formed on a substrate. A first conductive layer has a pattern that includes the first gate electrode which is electrically insulated from the semiconductor pattern. A second conductive layer has a pattern that includes a source electrode electrically connected to the semiconductor pattern, a drain electrode spaced apart from the source electrode, and a second gate electrode electrically connected to the first gate electrode. The second gate electrode is electrically insulated from the semiconductor pattern, the source electrode and the drain electrode.

Abstract translation: 薄膜晶体管包括半导体图案，第一栅电极，源电极，漏电极和第二栅电极。 半导体图案形成在基板上。 第一导电层具有包括与半导体图案电绝缘的第一栅电极的图案。 第二导电层具有图案，其包括电连接到半导体图案的源电极，与源电极间隔开的漏电极和与第一栅电极电连接的第二栅电极。 第二栅电极与半导体图案，源电极和漏电极电绝缘。

公开(公告)号：US08623120B2

公开(公告)日：2014-01-07

申请号：US13284261

申请日：2011-10-28

Applicant: Sang Hyup Lee ,  Hyun Jung Lee ,  Joong Kee Lee ,  Joo Man Woo ,  Min Woo Lee ,  Han Byul Kim

Inventor： Sang Hyup Lee ,  Hyun Jung Lee ,  Joong Kee Lee ,  Joo Man Woo ,  Min Woo Lee ,  Han Byul Kim

IPC: B01D53/04 ,  B01D61/00

CPC classification number: B01D53/229 ,  B01D53/04 ,  B01D53/225 ,  B01D71/50 ,  B01D2253/102 ,  B01D2257/302 ,  B01D2257/80 ,  B01D2258/0216 ,  B01D2259/40096 ,  B01D2259/414 ,  Y02C20/30

Abstract: An apparatus and a method for recovery of sulfur hexafluoride is provided. Sulfur hexafluoride (SF6) may be separated with high-concentration and improved recovery ratio through a multi-stage separation and recovery processes using a plurality of separation membrane modules, and as well, SF6 gas may be concentrated to maximize the SF6 recovery ratio before the separation and recovery processes through the separation membrane modules. Furthermore, sulfur dioxide (SO2) and moisture included in the SF6 waste gas may be removed effectively so as to extend the service life of the separation membrane modules.

Abstract translation: 提供了一种用于回收六氟化硫的装置和方法。 通过使用多个分离膜组件的多级分离和回收方法，六氟化硫（SF6）可以通过高浓度和提高的回收率分离，并且还可以浓缩SF 6气体以使SF6回收率最高 分离和回收过程通过分离膜组件。 此外，可以有效地除去SF 6废气中包含的二氧化硫（SO 2）和水分，以延长分离膜组件的使用寿命。