公开(公告)号：US20090284152A1

公开(公告)日：2009-11-19

申请号：US12453466

申请日：2009-05-12

Applicant: Sang-Hun JANG ,  Shinichiro NAGANO ,  Chung-Gyoo LEE ,  Yong-Shik HWANG ,  Seong-Chan BAE ,  Jae-Wook KANG ,  Hyeon-Seok KIM ,  Hyun-Jung LEE ,  Yong-Mi YU

Inventor： Sang-Hun JANG ,  Shinichiro NAGANO ,  Chung-Gyoo LEE ,  Yong-Shik HWANG ,  Seong-Chan BAE ,  Jae-Wook KANG ,  Hyeon-Seok KIM ,  Hyun-Jung LEE ,  Yong-Mi YU

IPC: H01J17/49

CPC classification number: H01J11/12 ,  H01J11/40

Abstract: A plasma display panel, including a front substrate and a rear substrate arranged opposite to each other, a plurality of display electrodes disposed in a first direction on a first surface of the front substrate, a dielectric layer covering the display electrodes on the front substrate, a protective layer including protective layer grains covering the dielectric layer, and a crystal modification seed layer disposed between the dielectric layer and the protective layer, wherein the crystal modification seed layer includes crystal modification seeds including at least one of an alkaline earth metal, a transition metal, an amphoteric element, a semimetal element, and a lanthanide.

Abstract translation: 一种等离子体显示面板，包括彼此相对布置的前基板和后基板，在前基板的第一表面上沿第一方向设置的多个显示电极，覆盖前基板上的显示电极的电介质层， 保护层，其包括覆盖所述电介质层的保护层晶粒，以及设置在所述电介质层和所述保护层之间的晶体改性种子层，其中所述晶体改性种子层包括晶体改性晶种，所述晶种修饰种子包括碱土金属， 金属，两性元素，半金属元素和镧系元素。

公开(公告)号：US20160064270A1

公开(公告)日：2016-03-03

申请号：US14939439

申请日：2015-11-12

Applicant: EUN-OK LEE ,  Nam-Gun KIM ,  Gyuhwan OH ,  Heesook PARK ,  Hyun-Jung LEE ,  Kyungho JANG

Inventor： EUN-OK LEE ,  Nam-Gun KIM ,  Gyuhwan OH ,  Heesook PARK ,  Hyun-Jung LEE ,  Kyungho JANG

IPC: H01L21/768

CPC classification number: H01L23/5329 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76889 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/53209 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A spacer covering a sidewall of a contact plug includes a relatively more damaged first portion and a relatively less damaged second portion. An interface of the first and second portions of the spacer is spaced apart from a metal suicide layer of the contact plug. Thus reliability of the semiconductor device may be improved. Related fabrication methods are also described.

Abstract translation: 覆盖接触塞的侧壁的间隔件包括相对更受损的第一部分和相对较少受损的第二部分。 间隔物的第一和第二部分的界面与接触塞的金属硅化物层间隔开。 因此，可以提高半导体器件的可靠性。 还描述了相关的制造方法。

公开(公告)号：US20130099240A1

公开(公告)日：2013-04-25

申请号：US13650528

申请日：2012-10-12

Applicant: Hyun-Jung LEE ,  Sung-Haeng CHO ,  Woo-Geun LEE ,  Jang-Hoon HA ,  Hee-Jun BYEON ,  Ji-Yun HONG ,  Ji-Soo OH

Inventor： Hyun-Jung LEE ,  Sung-Haeng CHO ,  Woo-Geun LEE ,  Jang-Hoon HA ,  Hee-Jun BYEON ,  Ji-Yun HONG ,  Ji-Soo OH

IPC: H01L29/786 ,  H01L21/34

CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/7869

Abstract: A Thin Film Transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate a first source electrode and a first drain electrode spaced apart from each other on the semiconductor layer, a channel area disposed in the semiconductor layer between the first source electrode and the first drain electrode, an etching prevention layer disposed on the channel area, the first source electrode, and the first drain electrode and a second source electrode in contact with the first source electrode, and a second drain electrode in contact with the first drain electrode.

公开(公告)号：US20090114278A1

公开(公告)日：2009-05-07

申请号：US12262492

申请日：2008-10-31

Applicant: Hyun-Jung LEE ,  Jun-Kyung Kim ,  Eun-Sik Kwak ,  Sang-Soo Lee

Inventor： Hyun-Jung LEE ,  Jun-Kyung Kim ,  Eun-Sik Kwak ,  Sang-Soo Lee

IPC: H01L31/00 ,  B05D5/12

CPC classification number: H01G9/2031 ,  H01G9/2004 ,  H01G9/2013 ,  H01G9/2059 ,  H01L51/0086 ,  Y02E10/542

Abstract: A dye-sensitized solar cell and a fabrication method thereof are disclosed. A method for fabricating a dye-sensitized solar cell, includes forming a sacrifice layer comprising colloidal particles on a transparent conductive substrate, supplying a photoelectrode material comprising transition metal oxide nano particles onto the sacrifice layer, thereby filling the transition metal oxide nano particles between the colloidal particles, removing the sacrifice layer by thermal treatment to prepare a photoelectrode having an inverse opal structure, and adsorbing dye molecules onto the photoelectrode.

Abstract translation: 公开了一种染料敏化太阳能电池及其制造方法。 一种染料敏化太阳能电池的制造方法，其特征在于，在透明导电性基板上形成含有胶体粒子的牺牲层，将由过渡金属氧化物纳米粒子构成的光电极材料供给到牺牲层上，从而将过渡金属氧化物纳米粒子 胶体颗粒，通过热处理去除牺牲层以制备具有反蛋白石结构的光电极，并将染料分子吸附到光电极上。

公开(公告)号：US20120256123A1

公开(公告)日：2012-10-11

申请号：US13524573

申请日：2012-06-15

Applicant: Jaephil CHO ,  Youn-Han CHANG ,  Sang-Hoon JEON ,  Hyun-Jung LEE

Inventor： Jaephil CHO ,  Youn-Han CHANG ,  Sang-Hoon JEON ,  Hyun-Jung LEE

IPC: H01M4/525

CPC classification number: H01M4/5825 ,  H01M4/366 ,  H01M4/505 ,  H01M4/525 ,  H01M10/0525

Abstract: The present invention relates to a positive active material for a rechargeable lithium battery, a method of preparing the same, and a rechargeable lithium battery including the same. More particularly, the present invention relates to a positive active material for a rechargeable lithium battery including a compound that can reversibly intercalate/deintercalate lithium and a lithium metal phosphate produced through binding with lithium of the compoound, the lithium metal phosphate existing from the surface of the compound to a predetermined depth, a method of preparing the positive active material, and a rechargeable lithium battery having the positive active material. The positive active material can accomplish excellent cycle-life characteristic and also, suppress battery swelling at a high temperature.

Abstract translation: 本发明涉及一种用于可再充电锂电池的正极活性材料及其制备方法，以及包含该锂二次电池的可再充电锂电池。 更具体地说，本发明涉及一种用于可再充电锂电池的正极活性材料，其包括可逆地插入/脱嵌锂的化合物和通过与所述组合物的锂结合而产生的锂金属磷酸盐，所述锂金属磷酸盐从 化合物至预定深度，制备正极活性物质的方法，以及具有正极活性物质的可再充电锂电池。 正极活性物质可以实现优异的循环寿命特性，并且还抑制高温下的电池膨胀。

公开(公告)号：US20110175082A1

公开(公告)日：2011-07-21

申请号：US12982406

申请日：2010-12-30

Applicant: Ki-Won KIM ,  Kap-Soo YOON ,  Do-Hyun KIM ,  Hyun-Jung LEE

Inventor： Ki-Won KIM ,  Kap-Soo YOON ,  Do-Hyun KIM ,  Hyun-Jung LEE

IPC: H01L29/12

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66765 ,  H01L29/78633

Abstract: A display substrate is provided. The display substrate includes a gate interconnection disposed on an insulating substrate, an oxide semiconductor pattern disposed on the gate interconnection and including an oxide semiconductor, and a data interconnection disposed on the oxide semiconductor pattern to interconnect the gate interconnection. The oxide semiconductor pattern includes a first oxide semiconductor pattern having a first oxide and a first element and a second oxide semiconductor pattern having a second oxide.

Abstract translation: 提供显示基板。 显示基板包括布置在绝缘基板上的栅极互连，设置在栅极互连上并包括氧化物半导体的氧化物半导体图案，以及布置在氧化物半导体图案上以互连栅极互连的数据互连。 氧化物半导体图案包括具有第一氧化物和第一元素的第一氧化物半导体图案以及具有第二氧化物的第二氧化物半导体图案。

公开(公告)号：US20110168997A1

公开(公告)日：2011-07-14

申请号：US13006591

申请日：2011-01-14

Applicant: Young-Wook LEE ,  Woo-Geun LEE ,  Ki-Won KIM ,  Hyun-Jung LEE ,  Ji-Soo OH

Inventor： Young-Wook LEE ,  Woo-Geun LEE ,  Ki-Won KIM ,  Hyun-Jung LEE ,  Ji-Soo OH

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L27/124 ,  H01L21/76834 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1262 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/7869 ,  H01L29/78693

Abstract: A thin film transistor (TFT) array substrate and a manufacturing method thereof are provided. The TFT array substrate may include a gate line disposed on a substrate and including a gate line and a gate electrode, an oxide semiconductor layer pattern disposed on the gate electrode, a data line disposed on the oxide semiconductor layer pattern and including a source electrode and a drain electrode of a thin film transistor (TFT) together with the gate electrode, and a data line extending in a direction intersecting the gate line, and etch stop patterns disposed at an area where the TFT is formed between the source/drain electrodes and the oxide semiconductor layer pattern and at an area where the gate line and the data line overlap each other between the gate line and the data line.

Abstract translation: 提供薄膜晶体管（TFT）阵列基板及其制造方法。 TFT阵列基板可以包括设置在基板上的栅极线，包括栅极线和栅电极，设置在栅电极上的氧化物半导体层图案，设置在氧化物半导体层图案上的数据线，并且包括源电极和 薄膜晶体管（TFT）的漏电极和栅电极以及沿着与栅极线交叉的方向延伸的数据线，以及蚀刻停止图案，设置在源极/漏极之间形成TFT的区域，以及 氧化物半导体层图案和栅极线与数据线在栅极线与数据线之间重叠的区域。

公开(公告)号：US20200224952A1

公开(公告)日：2020-07-16

申请号：US16552572

申请日：2019-08-27

Applicant: Hyun-Jung LEE

Inventor： Hyun-Jung LEE

IPC: F25D17/02 ,  A47C21/04 ,  F25D19/00 ,  F25D31/00

Abstract: The present invention relates to a circulator for a cooling mat, whereby water is brought into contact with a frozen refrigerant, cooled thereby, and then circulated through a pipe of the mat, such that a cooling effect can be provided to a user in contact with the mat by using the circulator having a simple structure.

公开(公告)号：US20100266838A1

公开(公告)日：2010-10-21

申请号：US12575685

申请日：2009-10-08

Applicant: Hyun-Jung LEE ,  Hee-Suk KIM ,  Jun-Kyung KIM ,  Kyoung-Ah OH ,  Seung-Woong NAM ,  Soon-Ho LIM

Inventor： Hyun-Jung LEE ,  Hee-Suk KIM ,  Jun-Kyung KIM ,  Kyoung-Ah OH ,  Seung-Woong NAM ,  Soon-Ho LIM

IPC: B32B5/16 ,  B05D3/06 ,  B05D5/12

CPC classification number: H01B1/24 ,  H01B1/22 ,  H05K1/097 ,  H05K2201/026 ,  H05K2201/0281 ,  H05K2203/0285 ,  Y10T428/25

Abstract: A method for fabricating a conductive film, and a conductive film fabricated by the same. The method comprises: preprocessing carbon nanotubes by at least one of a cutting step using ultrasonic wave, and a chemical reaction step with acid; dispersing the carbon nanotubes in a solvent; mixing metal wires with the carbon nanotubes dispersion solution; and forming an electrode layer by coating the mixed resultant on a substrate. Accordingly, can be easily fabricated the conductive film having high transmittance and high electric conductivity.

Abstract translation: 一种导电膜的制造方法和由其制造的导电膜。 该方法包括：通过使用超声波的切割步骤和与酸的化学反应步骤中的至少一个来预处理碳纳米管; 将碳纳米管分散在溶剂中; 将金属线与碳纳米管分散液混合; 以及通过将混合的结果涂覆在基底上来形成电极层。 因此，可以容易地制造具有高透射率和高导电性的导电膜。

公开(公告)号：US20100263908A1

公开(公告)日：2010-10-21

申请号：US12575699

申请日：2009-10-08

Applicant: Hyun-Jung LEE ,  Hee-Suk KIM ,  Sun-Young NOH ,  Sun-Na Hwang ,  Soon-Ho LIM ,  Min PARK ,  Jun-Kyung KIM

Inventor： Hyun-Jung LEE ,  Hee-Suk KIM ,  Sun-Young NOH ,  Sun-Na Hwang ,  Soon-Ho LIM ,  Min PARK ,  Jun-Kyung KIM

IPC: H01B5/00 ,  B05D1/36 ,  C23C16/00 ,  B05D1/02 ,  B29C47/00 ,  C25D13/00 ,  C25D5/34

CPC classification number: C09D5/24 ,  B82Y30/00 ,  C08K3/041 ,  C09D7/70 ,  C23C18/08 ,  C25D13/02 ,  H01B1/24

Abstract: Disclosed are a method for fabricating a conductive film, and a conductive film fabricated by the same. The method comprises: forming a mixed solution consisting of at least one of a metallic precursor and a conductive polymer; spraying atomized droplets of the mixed solution on a surface of a substrate so as to form conductive frames; and coupling carbon nanotubes to the conductive frames so as to enhance electric conductivity. Accordingly, the conductive film can have enhanced electric conductivity, and can be easily fabricated.

Abstract translation: 公开了一种制造导电膜的方法及其制造的导电膜。 该方法包括：形成由金属前体和导电聚合物中的至少一种组成的混合溶液; 将混合溶液的雾化液滴喷射到基板的表面上，形成导电框架; 并将碳纳米管偶联到导电框架上以提高导电性。 因此，导电膜可以具有增强的导电性，并且可以容易地制造。