公开(公告)号：US5859760A

公开(公告)日：1999-01-12

申请号：US843799

申请日：1997-04-21

申请人： In-sung Park ,  Kyung-hoon Kim

发明人： In-sung Park ,  Kyung-hoon Kim

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/822 ,  H01G4/06

CPC分类号： H01L28/40

摘要： A microelectronic capacitor is formed by nitrating the surface of a conducting electrode on a microelectronic substrate. The nitrated surface of the conductive electrode is then oxidized. The nitrating and oxidizing steps collectively form a film of silicon oxynitride on the conductive electrode. A tantalum pentoxide film is then formed on the oxidized and nitrated surface of the conductive electrode. The tantalum pentoxide film may then be thermally treated in the presence of oxygen gas. High performance microelectronic capacitors are thereby provided.

摘要翻译： 通过在微电子衬底上硝化导电电极的表面形成微电子电容器。 然后将导电电极的硝化表面氧化。 硝化和氧化步骤在导电电极上共同形成氮氧化硅膜。 然后在导电电极的氧化和硝化表面上形成五氧化二钽膜。 然后可以在氧气存在下对五氧化钽膜进行热处理。 从而提供高性能微电子电容器。

公开(公告)号：US20120096552A1

公开(公告)日：2012-04-19

申请号：US13320263

申请日：2010-06-22

申请人： Seung Hyun Paek ,  In Sung Park ,  Eun Young Lee ,  Joo Beom Yun ,  Ki Wook Sohn ,  Seok Jin Choi

发明人： Seung Hyun Paek ,  In Sung Park ,  Eun Young Lee ,  Joo Beom Yun ,  Ki Wook Sohn ,  Seok Jin Choi

IPC分类号： G06F21/00

CPC分类号： G06F21/577 ,  G06F21/552 ,  G06F2221/0775 ,  G06F2221/2129 ,  G06F2221/2145 ,  G06F2221/2151 ,  H04L63/1416

摘要： A system for an engine for forecasting cyber threats and a method enabling the forecast of a low-level cyber threat and the forecast of a high-level cyber threat using the low-level cyber threat in a hierarchical structure of cyber threats are provided. The system includes a forecast information database which stores forecast information including cyber threat forecast items, a forecast schedule related to the items, forecast simulation information, forecast item hierarchical structure information, time series data on cyber threats, and sample data on cyber threats; a forecast engine core subsystem which forecasts the levels of threats for the cyber threat forecast items having a hierarchical structure using the forecast information stored in the forecast information database; and a forecast engine control interface which receives control commands for the forecast engine core subsystem from a user or external system, and delivers the received control commands to the forecast engine core subsystem.

摘要翻译： 提供了一种用于预测网络威胁的引擎系统，并提供了一种能够预测低级网络威胁的方法，并使用网络威胁分层结构中的低级网络威胁来预测高级网络威胁。 该系统包括一个预测信息数据库，存储预测信息，包括网络威胁预测项目，与项目有关的预测进度，预测模拟信息，预测项目分层结构信息，网络威胁时间序列数据和网络威胁示例数据; 预测引擎核心子系统，使用存储在预测信息数据库中的预测信息来预测具有分级结构的网络威胁预测项目的威胁级别; 以及预测引擎控制接口，其从用户或外部系统接收用于预测引擎核心子系统的控制命令，并将接收的控制命令传递到预测引擎核心子系统。

公开(公告)号：US07716329B2

公开(公告)日：2010-05-11

申请号：US12103266

申请日：2008-04-15

申请人： Eun Young Lee ,  Seung Hyun Paek ,  In Sung Park ,  Joo Beom Yun ,  Ki Wook Sohn

发明人： Eun Young Lee ,  Seung Hyun Paek ,  In Sung Park ,  Joo Beom Yun ,  Ki Wook Sohn

IPC分类号： G06F13/00

CPC分类号： H04L63/1425 ,  H04L43/045

摘要： An apparatus and method for detecting anomalous traffic are provided. More particularly, an apparatus and method for detecting anomalous traffic based on entropy of network traffic are provided. The apparatus of detecting anomalous traffic includes: an entropy extraction module for extracting entropy from network traffic; a visualization module for generating an entropy graph based on the entropy; a graph model experience module for updating a graph model for each network attack based on the entropy graph; and an anomalous traffic detection module for detecting anomalous traffic based on the entropy graph and the graph model for each network attack and outputting the detection results to a user. In the apparatus and method, anomalous traffic is detected based on network entropy rather than simple statistics based on the amount of traffic, so that a false alarm rate of the apparatus for detecting anomalous traffic can be reduced.

摘要翻译： 提供了一种用于检测异常流量的装置和方法。 更具体地，提供了一种用于基于网络流量熵来检测异常业务的装置和方法。 检测异常流量的装置包括：熵抽取模块，用于从网络流量提取熵; 用于基于所述熵产生熵图的可视化模块; 用于基于熵图更新每个网络攻击的图形模型的图形模型体验模块; 以及用于根据每个网络攻击的熵图和图形模型检测异常流量的异常流量检测模块，并将检测结果输出给用户。 在装置和方法中，基于网络熵而不是基于业务量的简单统计来检测异常业务，从而可以减少用于检测异常业务的装置的误报率。

公开(公告)号：US20070259212A1

公开(公告)日：2007-11-08

申请号：US11778278

申请日：2007-07-16

申请人： Ki-yeon Park ,  Sung-tae Kim ,  Young-sun Kim ,  In-sung Park ,  Jae-hyun Yeo ,  Yun-jung Lee ,  Ki-vin Im

发明人： Ki-yeon Park ,  Sung-tae Kim ,  Young-sun Kim ,  In-sung Park ,  Jae-hyun Yeo ,  Yun-jung Lee ,  Ki-vin Im

IPC分类号： B32B9/00 ,  B32B19/00

CPC分类号： H01L21/0228 ,  C23C16/40 ,  C23C16/45529 ,  C23C16/45553 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/31604 ,  H01L27/1085

摘要： The present invention provides methods of forming metal thin films, lanthanum oxide films and high dielectric films. Compositions of metal thin films, lanthanum oxide films and high dielectric films are also provided. Further provided are semiconductor devices comprising the metal thin films, lanthanum oxide films and high dielectric films provided herein.

摘要翻译： 本发明提供形成金属薄膜，氧化镧膜和高介电膜的方法。 还提供了金属薄膜，氧化镧薄膜和高介电薄膜的组成。 还提供了包括金属薄膜，氧化镧膜和本文提供的高介电膜的半导体器件。

公开(公告)号：US07094712B2

公开(公告)日：2006-08-22

申请号：US10793818

申请日：2004-03-08

申请人： Ki-Vin Im ,  Ki-Yeon Park ,  Jae-Hyun Yeo ,  In-Sung Park ,  Seung-Hwan Lee ,  Young-Sun Kim ,  Sung-Tae Kim

发明人： Ki-Vin Im ,  Ki-Yeon Park ,  Jae-Hyun Yeo ,  In-Sung Park ,  Seung-Hwan Lee ,  Young-Sun Kim ,  Sung-Tae Kim

IPC分类号： H01L21/31

CPC分类号： H01L21/0228 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/31645 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Disclosed is a method for forming metal oxide dielectric layers, more particularly HfO2 dielectric layers, using an atomic layer deposition (ALD) method in which a series of thin intermediate layers are formed and treated with one or more oxidizers and nitrogents before the next intermediate layer is formed on the substrate. The intermediate oxidation treatments reduce the number of organic contaminants incorporated into the metal oxide layer from the organometallic precursors to produce a dielectric layer having improved current leakage characteristics. The dielectric layers formed in this manner remain susceptible to crystallization if exposed to temperatures much above 550° C., so subsequent semiconductor manufacturing processes should be modified or eliminated to avoid such temperatures or limit the duration at such temperatures to maintain the performance of the dielectric materials.

摘要翻译： 公开了一种使用原子层沉积（ALD）方法形成金属氧化物电介质层，更具体地是HfO 2 电介质层的方法，其中形成一系列薄的中间层并用一个或多个 在下一个中间层之前形成氧化剂和氮。 中间氧化处理减少了从有机金属前体引入到金属氧化物层中的有机污染物的数量，以产生具有改善的电流泄漏特性的电介质层。 如果暴露在高于550℃的温度下，以这种方式形成的电介质层仍然易于结晶，因此随后的半导体制造工艺应当被修改或消除以避免这种温度或限制在这样的温度下的持续时间以保持电介质的性能 材料

公开(公告)号：US06897106B2

公开(公告)日：2005-05-24

申请号：US10713577

申请日：2003-11-12

申请人： Ki-Yeon Park ,  Sung-Tae Kim ,  Young-Sun Kim ,  In-Sung Park ,  Jae-Hyun Yeo ,  Ki-Vin Im

发明人： Ki-Yeon Park ,  Sung-Tae Kim ,  Young-Sun Kim ,  In-Sung Park ,  Jae-Hyun Yeo ,  Ki-Vin Im

IPC分类号： H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L28/40 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/31616 ,  H01L21/31645 ,  H01L28/56 ,  H01L28/65 ,  H01L28/75

摘要： A semiconductor memory device that includes a composite Al2O3/HfO2 dielectric layer with a layer thickness ratio greater than or equal to 1, and a method of manufacturing the capacitor are provided. The capacitor includes a lower electrode, a composite dielectric layer including an Al2O3 dielectric layer and an HfO2 dielectric layer sequentially formed on the lower electrode, the Al2O3 dielectric layer having a thickness greater than or equal to the HfO2 dielectric layer, and an upper electrode formed on the composite dielectric layer. The Al2O3 dielectric layer has a thickness of 30-60 Å. The HfO2 dielectric layer has a thickness of 40 Å or less.

摘要翻译： 一种半导体存储器件，其包括层厚度比大于或等于1的复合Al 2 O 3 / HfO 2 电介质层， 并提供一种制造该电容器的方法。 电容器包括下电极，复合电介质层，其包括依次形成在其上的Al 2 O 3 3电介质层和HfO 2 N 2介电层 下电极，具有大于或等于HfO 2 2电介质层的厚度的Al 2 O 3 3 电介质层，以及形成的上电极 在复合介电层上。 Al 2 O 3介电层具有30-60埃的厚度。 HfO 2 2介电层的厚度为40以下。

公开(公告)号：US20050087791A1

公开(公告)日：2005-04-28

申请号：US11009198

申请日：2004-12-08

申请人： Ki-Yeon Park ,  Sung-Tao Kim ,  Young-Sun Kim ,  In-Sung Park ,  Jae-Hyun Yeo ,  Ki-Vin Im

发明人： Ki-Yeon Park ,  Sung-Tao Kim ,  Young-Sun Kim ,  In-Sung Park ,  Jae-Hyun Yeo ,  Ki-Vin Im

IPC分类号： H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L28/40 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/31616 ,  H01L21/31645 ,  H01L28/56 ,  H01L28/65 ,  H01L28/75

摘要： A semiconductor memory device that includes a composite Al2O3HfO2 dielectric layer with a layer thickness ratio greater than or equal to 1, and a method of manufacturing the capacitor are provided. The capacitor includes a lower electrode, a composite dielectric layer including an Al2O3 dielectric layer and an HfO2 dielectric layer sequentially formed on the lower electrode, the Al2O3 dielectric layer having a thickness greater than or equal to the HfO2 dielectric layer, and an upper electrode formed on the composite dielectric layer. The Al2O3 dielectric layer has a thickness of 30-60 Å. The HfO2 dielectric layer has a thickness of 40 Å or less.

摘要翻译： 一种半导体存储器件，其包括层厚度比大于或等于1的复合Al 2 O 3 HfO 2 电介质层，以及 提供了制造电容器的方法。 电容器包括下电极，复合电介质层，其包括依次形成在其上的Al 2 O 3 3介电层和HfO 2 O 3介电层 下电极，具有大于或等于HfO 2 2电介质层的厚度的Al 2 O 3 3 电介质层，以及形成的上电极 在复合介电层上。 Al 2 O 3介电层具有30-60埃的厚度。 HfO 2 2介电层的厚度为40以下。

公开(公告)号：US06734480B2

公开(公告)日：2004-05-11

申请号：US10047706

申请日：2002-01-15

申请人： Jeong-hee Chung ,  In-sung Park ,  Jae-hyun Yeo

发明人： Jeong-hee Chung ,  In-sung Park ,  Jae-hyun Yeo

IPC分类号： H01L27108

CPC分类号： H01L21/02205 ,  C23C16/405 ,  C23C16/45553 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/31604 ,  H01L21/31683 ,  H01L21/31691 ,  H01L28/40

摘要： A semiconductor capacitor comprising: a first electrode; a second electrode; and a tantalum oxide layer positioned between said first electrode and said second electrodes. The tantalum oxide layer formed by depositing at least one precursor and ozone gas, the at least one precursor represented by the formula: wherein X is selected from the group consisting of nitrogen, sulfur, oxygen, and a carbonyl group; and wherein R1 and R2 are independently alkyl.

摘要翻译： 半导体电容器包括位于第一电极和第二电极之间的第一电极，第二电极和氧化钽层。 通过沉积至少一种前体和臭氧气体形成氧化钽层，所述至少一种前体由下式表示：其中X选自氮，硫，氧和羰基; 并且其中R 1和R 2独立地为烷基。

公开(公告)号：US06202590B1

公开(公告)日：2001-03-20

申请号：US09404805

申请日：1999-09-24

申请人： Kiw-sang Kim ,  Young-min Min ,  In-sung Park

发明人： Kiw-sang Kim ,  Young-min Min ,  In-sung Park

IPC分类号： C23C1600

CPC分类号： H01J37/32458 ,  H01J37/32082 ,  H01J37/32174

摘要： A plasma apparatus for fabricating a semiconductor device, is provided. This plasma apparatus includes a grounded chamber for providing a space where a predetermined process is to be performed, a chuck mounted within the chamber and insulated from the chamber, a gas injection ring installed around the sidewall of the chuck, an induction plasma power source connected to the chuck, a system controller for controlling the induction plasma power source, and a capacitance compensator for keeping the total chuck capacitance between the chuck and a ground terminal at a constant value. The gas injection ring is separated from the chuck by a predetermined distance and is electrically connected to the chamber.

摘要翻译： 提供一种用于制造半导体器件的等离子体设备。 该等离子体装置包括：接地室，用于提供要进行预定处理的空间;安装在室内并与室绝缘的卡盘;安装在卡盘侧壁周围的气体注入环;连接到感应等离子体电源 卡盘，用于控制感应等离子体电源的系统控制器和用于将卡盘和接地端子之间的总卡盘电容保持在恒定值的电容补偿器。 气体注入环与卡盘分开预定的距离，并且电连接到腔室。

公开(公告)号：US6118146A

公开(公告)日：2000-09-12

申请号：US152764

申请日：1998-09-14

申请人： In-sung Park ,  Eui-song Kim

发明人： In-sung Park ,  Eui-song Kim

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/203 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L31/119

CPC分类号： H01L28/40 ,  H01L28/82 ,  H01L21/31604

摘要： A microelectronic capacitor is formed by forming a first tantalum pentoxide film on a conductive electrode and annealing the first tantalum pentoxide film in the presence of ultraviolet radiation and ozone. The forming step and annealing step are then repeated at least once to form at least a second tantalum pentoxide film which has been annealed in the presence of ultraviolet radiation, on the first tantalum pentoxide film. A second conductive electrode may then be formed on the tantalum pentoxide layer. The resultant tantalum pentoxide layer can have a thickness which exceeds 45 .ANG., yet has a reduced leakage current by filling the oxygen vacancies across the thickness thereof.

摘要翻译： 通过在导电电极上形成第一五氧化二钽膜并在紫外线和臭氧的存在下退火第一五氧化二钽膜来形成微电子电容器。 然后，将形成步骤和退火步骤重复至少一次以形成至少一种在紫外线辐射下退火的第五个五氧化二钽膜。 然后可以在五氧化二钽层上形成第二导电电极。 所得五氧化二钽层的厚度可以超过45埃，但是通过在其厚度上填充氧空位具有减小的漏电流。