公开(公告)号：US06946342B2

公开(公告)日：2005-09-20

申请号：US10452979

申请日：2003-06-02

申请人： Jae-Hyun Yeo ,  Sung-Tae Kim ,  Young-Sun Kim ,  In-Sung Park ,  Seok-Jun Won ,  Yun-Jung Lee ,  Ki-Vin Im ,  Ki-Yeon Park

发明人： Jae-Hyun Yeo ,  Sung-Tae Kim ,  Young-Sun Kim ,  In-Sung Park ,  Seok-Jun Won ,  Yun-Jung Lee ,  Ki-Vin Im ,  Ki-Yeon Park

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/469 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L21/02271 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02318 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31691 ,  H01L28/40

摘要： A semiconductor device and a method for forming the same. A dielectric layer is formed on a semiconductor substrate or on a lower electrode of a capacitor. Vacuum annealing is performed on the dielectric layer. Thus, impurities remaining in the dielectric layer can be effectively removed, and the dielectric layer can be densified. As a result, the electrical characteristics of the semiconductor device are improved. For example, the leakage current characteristics of the dielectric layer are improved and capacitance is increased.

公开(公告)号：US20050272272A1

公开(公告)日：2005-12-08

申请号：US11198541

申请日：2005-08-05

申请人： Jae-Hyun Yeo ,  Sung-Tae Kim ,  Young-Sun Kim ,  In-Sung Park ,  Seok-Jun Won ,  Yun-Jung Lee ,  Ki-Vin Im ,  Ki-Yeon Park

发明人： Jae-Hyun Yeo ,  Sung-Tae Kim ,  Young-Sun Kim ,  In-Sung Park ,  Seok-Jun Won ,  Yun-Jung Lee ,  Ki-Vin Im ,  Ki-Yeon Park

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/469 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L21/02271 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02318 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31691 ,  H01L28/40

摘要： A semiconductor device and a method for forming the same. A dielectric layer is formed on a semiconductor substrate or on a lower electrode of a capacitor. Vacuum annealing is performed on the dielectric layer. Thus, impurities remaining in the dielectric layer can be effectively removed, and the dielectric layer can be densified. As a result, the electrical characteristics of the semiconductor device are improved. For example, the leakage current characteristics of the dielectric layer are improved and capacitance is increased.

摘要翻译： 一种半导体器件及其形成方法。 电介质层形成在半导体衬底上或电容器的下电极上。 在电介质层上进行真空退火。 因此，可以有效地除去残留在电介质层中的杂质，并且可以使电介质层致密化。 结果，提高了半导体器件的电特性。 例如，介电层的漏电流特性得到改善，电容增大。

公开(公告)号：US20050000426A1

公开(公告)日：2005-01-06

申请号：US10747803

申请日：2003-12-29

申请人： Ki-Vin Im ,  In-Sung Park ,  Sung-Tae Kim ,  Young-Sun Kim ,  Jae-Hyun Yeo ,  Yun-Jung Lee ,  Ki-Yeon Park

发明人： Ki-Vin Im ,  In-Sung Park ,  Sung-Tae Kim ,  Young-Sun Kim ,  Jae-Hyun Yeo ,  Yun-Jung Lee ,  Ki-Yeon Park

IPC分类号： H01L21/02 ,  C23C16/00 ,  C23C16/40 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455

CPC分类号： C23C16/45544 ,  C23C16/40 ,  C23C16/4481

摘要： An apparatus for depositing a thin film includes a reaction chamber, a reaction gas provider to supply a reaction gas and/or inert gas to the reaction chamber, an oxidant provider to supply a first oxidant and a second oxidant to the reaction chamber, and an air drain to exhaust gas from the apparatus. The oxidant provider is operable to supply the second oxidant to the reaction chamber using the first oxidant as a transfer gas.

摘要翻译： 用于沉积薄膜的装置包括反应室，向反应室供应反应气体和/或惰性气体的反应气体提供者，向反应室供应第一氧化剂和第二氧化剂的氧化剂供体，以及 从设备排出废气。 氧化剂供应商可操作以使用第一氧化剂作为转移气体将第二氧化剂供应到反应室。

公开(公告)号：US20050070063A1

公开(公告)日：2005-03-31

申请号：US10793818

申请日：2004-03-08

申请人： Ki-Vin Im ,  Ki-Yeon Park ,  Jae-Hyun Yeo ,  In-Sung Park ,  Seung-Hwan Lee ,  Young-Sun Kim ,  Sung-Tae Kim

发明人： Ki-Vin Im ,  Ki-Yeon Park ,  Jae-Hyun Yeo ,  In-Sung Park ,  Seung-Hwan Lee ,  Young-Sun Kim ,  Sung-Tae Kim

IPC分类号： C23C16/40 ,  C23C16/455 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01L29/49 ,  H01L29/51

CPC分类号： H01L21/0228 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/31645 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Disclosed is a method for forming metal oxide dielectric layers, more particularly HfO2 dielectric layers, using an atomic layer deposition (ALD) method in which a series of thin intermediate layers are formed and treated with one or more oxidizers and nitrogents before the next intermediate layer is formed on the substrate. The intermediate oxidation treatments reduce the number of organic contaminants incorporated into the metal oxide layer from the organometallic precursors to produce a dielectric layer having improved current leakage characteristics. The dielectric layers formed in this manner remain susceptible to crystallization if exposed to temperatures much above 550° C., so subsequent semiconductor manufacturing processes should be modified or eliminated to avoid such temperatures or limit the duration at such temperatures to maintain the performance of the dielectric materials.

摘要翻译： 公开了一种使用原子层沉积（ALD）方法形成金属氧化物电介质层，更具体地HfO 2电介质层的方法，其中在下一个中间层之前形成一系列薄的中间层并用一种或多种氧化剂和氮化物进行处理 形成在基板上。 中间氧化处理减少了从有机金属前体引入到金属氧化物层中的有机污染物的数量，以产生具有改善的电流泄漏特性的电介质层。 如果暴露在高于550℃的温度下，以这种方式形成的电介质层仍然易于结晶，因此随后的半导体制造工艺应当被修改或消除以避免这种温度或限制在这样的温度下的持续时间以保持电介质的性能 材料

公开(公告)号：US07094712B2

公开(公告)日：2006-08-22

申请号：US10793818

申请日：2004-03-08

申请人： Ki-Vin Im ,  Ki-Yeon Park ,  Jae-Hyun Yeo ,  In-Sung Park ,  Seung-Hwan Lee ,  Young-Sun Kim ,  Sung-Tae Kim

发明人： Ki-Vin Im ,  Ki-Yeon Park ,  Jae-Hyun Yeo ,  In-Sung Park ,  Seung-Hwan Lee ,  Young-Sun Kim ,  Sung-Tae Kim

IPC分类号： H01L21/31

CPC分类号： H01L21/0228 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/31645 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Disclosed is a method for forming metal oxide dielectric layers, more particularly HfO2 dielectric layers, using an atomic layer deposition (ALD) method in which a series of thin intermediate layers are formed and treated with one or more oxidizers and nitrogents before the next intermediate layer is formed on the substrate. The intermediate oxidation treatments reduce the number of organic contaminants incorporated into the metal oxide layer from the organometallic precursors to produce a dielectric layer having improved current leakage characteristics. The dielectric layers formed in this manner remain susceptible to crystallization if exposed to temperatures much above 550° C., so subsequent semiconductor manufacturing processes should be modified or eliminated to avoid such temperatures or limit the duration at such temperatures to maintain the performance of the dielectric materials.

摘要翻译： 公开了一种使用原子层沉积（ALD）方法形成金属氧化物电介质层，更具体地是HfO 2 电介质层的方法，其中形成一系列薄的中间层并用一个或多个 在下一个中间层之前形成氧化剂和氮。 中间氧化处理减少了从有机金属前体引入到金属氧化物层中的有机污染物的数量，以产生具有改善的电流泄漏特性的电介质层。 如果暴露在高于550℃的温度下，以这种方式形成的电介质层仍然易于结晶，因此随后的半导体制造工艺应当被修改或消除以避免这种温度或限制在这样的温度下的持续时间以保持电介质的性能 材料

公开(公告)号：US06897106B2

公开(公告)日：2005-05-24

申请号：US10713577

申请日：2003-11-12

申请人： Ki-Yeon Park ,  Sung-Tae Kim ,  Young-Sun Kim ,  In-Sung Park ,  Jae-Hyun Yeo ,  Ki-Vin Im

发明人： Ki-Yeon Park ,  Sung-Tae Kim ,  Young-Sun Kim ,  In-Sung Park ,  Jae-Hyun Yeo ,  Ki-Vin Im

IPC分类号： H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L28/40 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/31616 ,  H01L21/31645 ,  H01L28/56 ,  H01L28/65 ,  H01L28/75

摘要： A semiconductor memory device that includes a composite Al2O3/HfO2 dielectric layer with a layer thickness ratio greater than or equal to 1, and a method of manufacturing the capacitor are provided. The capacitor includes a lower electrode, a composite dielectric layer including an Al2O3 dielectric layer and an HfO2 dielectric layer sequentially formed on the lower electrode, the Al2O3 dielectric layer having a thickness greater than or equal to the HfO2 dielectric layer, and an upper electrode formed on the composite dielectric layer. The Al2O3 dielectric layer has a thickness of 30-60 Å. The HfO2 dielectric layer has a thickness of 40 Å or less.

摘要翻译： 一种半导体存储器件，其包括层厚度比大于或等于1的复合Al 2 O 3 / HfO 2 电介质层， 并提供一种制造该电容器的方法。 电容器包括下电极，复合电介质层，其包括依次形成在其上的Al 2 O 3 3电介质层和HfO 2 N 2介电层 下电极，具有大于或等于HfO 2 2电介质层的厚度的Al 2 O 3 3 电介质层，以及形成的上电极 在复合介电层上。 Al 2 O 3介电层具有30-60埃的厚度。 HfO 2 2介电层的厚度为40以下。

公开(公告)号：US20050087791A1

公开(公告)日：2005-04-28

申请号：US11009198

申请日：2004-12-08

申请人： Ki-Yeon Park ,  Sung-Tao Kim ,  Young-Sun Kim ,  In-Sung Park ,  Jae-Hyun Yeo ,  Ki-Vin Im

发明人： Ki-Yeon Park ,  Sung-Tao Kim ,  Young-Sun Kim ,  In-Sung Park ,  Jae-Hyun Yeo ,  Ki-Vin Im

IPC分类号： H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L28/40 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/31616 ,  H01L21/31645 ,  H01L28/56 ,  H01L28/65 ,  H01L28/75

摘要： A semiconductor memory device that includes a composite Al2O3HfO2 dielectric layer with a layer thickness ratio greater than or equal to 1, and a method of manufacturing the capacitor are provided. The capacitor includes a lower electrode, a composite dielectric layer including an Al2O3 dielectric layer and an HfO2 dielectric layer sequentially formed on the lower electrode, the Al2O3 dielectric layer having a thickness greater than or equal to the HfO2 dielectric layer, and an upper electrode formed on the composite dielectric layer. The Al2O3 dielectric layer has a thickness of 30-60 Å. The HfO2 dielectric layer has a thickness of 40 Å or less.

摘要翻译： 一种半导体存储器件，其包括层厚度比大于或等于1的复合Al 2 O 3 HfO 2 电介质层，以及 提供了制造电容器的方法。 电容器包括下电极，复合电介质层，其包括依次形成在其上的Al 2 O 3 3介电层和HfO 2 O 3介电层 下电极，具有大于或等于HfO 2 2电介质层的厚度的Al 2 O 3 3 电介质层，以及形成的上电极 在复合介电层上。 Al 2 O 3介电层具有30-60埃的厚度。 HfO 2 2介电层的厚度为40以下。

公开(公告)号：US20060084225A1

公开(公告)日：2006-04-20

申请号：US11291191

申请日：2005-12-01

申请人： In-Sung Park ,  Ki-Vin Im ,  Ki-Yeon Park ,  Jae-Hyun Yeo ,  Yun-Jung Lee

发明人： In-Sung Park ,  Ki-Vin Im ,  Ki-Yeon Park ,  Jae-Hyun Yeo ,  Yun-Jung Lee

IPC分类号： H01L21/8242

CPC分类号： H01L21/022 ,  C23C16/54 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31608 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31691 ,  H01L21/3185 ,  H01L21/67207 ,  H01L27/0218 ,  H01L28/56

摘要： In some embodiments, a multi-layer dielectric structure, such as a capacitor dielectric region, is formed by forming a first dielectric layer on a substrate according to a CVD process and forming a second dielectric layer directly on the first dielectric layer according to an ALD process. In further embodiments, a multi-layer dielectric structure is formed by forming a first dielectric layer on a substrate according to an ALD process and forming a second dielectric layer directly on the first dielectric layer according to a CVD process. The CVD-formed layers may comprise one selected from the group consisting of SiO2, Si3N3, Ta2O5, HfO2, ZrO2, TiO2, Y2O3, Pr2O3, La2O3, Nb2O5, SrTiO3 (STO), BaSrTiO3 (BST) and PbZrTiO3 (PZT). The ALD-formed layers may comprise one selected from the group consisting of SiO2, Si3N3, Al2O3, Ta2O5, HfO2, ZrO2, TiO2, Y2O3, Pr2O3, La2O3, Nb2O5, SrTiO3 (STO), BaSrTiO3 (BST) and PbZrTiO3 (PZT).

摘要翻译： 在一些实施例中，通过根据CVD工艺在衬底上形成第一电介质层并根据ALD在第一电介质层上直接形成第二电介质层来形成诸如电容器电介质区域的多层电介质结构 处理。 在另外的实施例中，通过根据ALD工艺在衬底上形成第一电介质层并根据CVD工艺在第一电介质层上直接形成第二电介质层来形成多层电介质结构。 CVD形成的层可以包括从由SiO 2，Si 3 N 3 N 3，Ta 2 O 3， O 2，HfO 2，ZrO 2，TiO 2，Y 2，N 2， 3 O 3，3/3，3，3，3，3，3，3，3，3， （STO），BaSrTiO 3（BST）和PbZrTiO 3（BST）3（S0） / SUB>（PZT）。 ALD形成的层可以包括从由SiO 2，Si 3 N 3 N 3，Al 2 O 3， 3，O 3，O 2 O 5，HfO 2，ZrO 2，N 2， ，TiO 2，Y 2 O 3，Pr 2 O 3，La Nb 2 O 3，SrTiO 3（STO），N 2 O 3， BaSrTiO 3（BST）和PbZrTiO 3 3（PZT）。

公开(公告)号：US07485585B2

公开(公告)日：2009-02-03

申请号：US11372117

申请日：2006-03-10

申请人： Young-Geun Park ,  Jae-Hyun Yeo ,  Eun-Ae Chung ,  Ki-Vin Im ,  Young-Sun Kim ,  Sung-Tae Kim ,  Cha-Young Yoo

发明人： Young-Geun Park ,  Jae-Hyun Yeo ,  Eun-Ae Chung ,  Ki-Vin Im ,  Young-Sun Kim ,  Sung-Tae Kim ,  Cha-Young Yoo

IPC分类号： H01L21/469 ,  H01L23/58

CPC分类号： H01L21/02205 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45553 ,  H01L21/02181 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/40 ,  H01L29/517 ,  H01L29/78

摘要： In a method of forming a thin film and methods of manufacturing a gate structure and a capacitor, a hafnium precursor including one alkoxy group and three amino groups, and an oxidizing agent are provided on a substrate. The hafnium precursor is reacted with the oxidizing agent to form the thin film including hafnium oxide on the substrate. The hafnium precursor may be employed for forming a gate insulation layer of a transistor or a dielectric layer of a capacitor.

摘要翻译： 在形成薄膜的方法和制造栅极结构和电容器的方法中，在基板上设置有包含一个烷氧基和三个氨基的铪前体和氧化剂。 铪前体与氧化剂反应形成包含氧化铪的薄膜。 铪前体可以用于形成电容器的晶体管或电介质层的栅极绝缘层。

公开(公告)号：US20060205198A1

公开(公告)日：2006-09-14

申请号：US11372117

申请日：2006-03-10

申请人： Young-Geun Park ,  Jae-Hyun Yeo ,  Eun-Ae Chung ,  Ki-Vin Im ,  Young-Sun Kim ,  Sung-Tae Kim ,  Cha-Young Yoo

发明人： Young-Geun Park ,  Jae-Hyun Yeo ,  Eun-Ae Chung ,  Ki-Vin Im ,  Young-Sun Kim ,  Sung-Tae Kim ,  Cha-Young Yoo

IPC分类号： H01L21/8242 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L21/02205 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45553 ,  H01L21/02181 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/40 ,  H01L29/517 ,  H01L29/78

摘要： In a method of forming a thin film and methods of manufacturing a gate structure and a capacitor, a hafnium precursor including one alkoxy group and three amino groups, and an oxidizing agent are provided on a substrate. The hafnium precursor is reacted with the oxidizing agent to form the thin film including hafnium oxide on the substrate. The hafnium precursor may be employed for forming a gate insulation layer of a transistor or a dielectric layer of a capacitor.