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    Methods of programming multi-level cell nonvolatile memory devices and devices so operating
    31.
    发明授权
    Methods of programming multi-level cell nonvolatile memory devices and devices so operating 有权
    编程多级单元非易失性存储器件和器件的操作方法

    公开(公告)号：US09343158B2

    公开(公告)日：2016-05-17

    申请号：US14165835

    申请日：2014-01-28

    申请人： Jung-Ho Song ,  Su-Yong Kim ,  Sang-Won Hwang

    发明人： Jung-Ho Song ,  Su-Yong Kim ,  Sang-Won Hwang

    IPC分类号： G11C11/34 ,  G11C16/14 ,  G11C11/56 ,  G11C16/04 ,  G11C16/34

    CPC分类号： G11C16/14 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/3418 ,  G11C16/3459

    摘要： To program in a nonvolatile memory device include a plurality of memory cells that are programmed into multiple states through at least two program steps, a primary program is performed from an erase level to a first target level with respect to the memory cells coupled to a selected word line A preprogram is performed from the erase level to a preprogram level in association with the primary program with respect to the memory cells coupled to the selected word line, where the preprogram level is larger than the erase level and smaller than the first target level A secondary program is performed from the preprogram level to a second target level with respect to the preprogrammed memory cells coupled to the selected word line.

    摘要翻译： 在非易失性存储器件中编程包括通过至少两个程序步骤被编程成多个状态的多个存储器单元，相对于耦合到所选择的存储单元，从擦除电平到第一目标电平执行主程序 字线相对于耦合到所选择的字线的存储器单元与原始程序相关联地从擦除电平执行预编程电平，其中预编程电平大于擦除电平并小于第一目标电平 相对于耦合到所选字线的预编程存储器单元，从预编程级到第二目标级执行次程序。

    Nonvolatile memory device and method of reading data in nonvolatile memory device
    32.
    发明授权
    Nonvolatile memory device and method of reading data in nonvolatile memory device 有权
    非易失性存储器件和非易失性存储器件中的数据读取方法

    公开(公告)号：US08760919B2

    公开(公告)日：2014-06-24

    申请号：US13598892

    申请日：2012-08-30

    申请人： Jung-Ho Song ,  Jin-Yub Lee ,  Jae-Woo Im ,  Seung-Jae Lee ,  Sang-So Park

    发明人： Jung-Ho Song ,  Jin-Yub Lee ,  Jae-Woo Im ,  Seung-Jae Lee ,  Sang-So Park

    IPC分类号： G11C11/56 ,  G11C16/04

    CPC分类号： G11C11/56 ,  G11C11/5642 ,  G11C16/04 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/3404 ,  G11C2211/56

    摘要： A method is provided for reading data in a nonvolatile memory device. The method includes performing a first read operation on multiple multi-level memory cells (MLCs), performing a first sensing operation on at least one flag cell corresponding to the MLCs, selectively performing a second read operation on the MLCs based on a result of the first sensing operation, and performing a second sensing operation on the at least one flag cell when the second read operation is performed. Read data is output based on results of the first read operation and the first sensing operation when the second read operation is not performed, and the read data is output based on result of the first read operation, the first sensing operation, the second read operation and the second sensing operation when the second read operation is performed. The read data corresponds to programmed data in the MLCs.

    摘要翻译： 提供了一种用于在非易失性存储器件中读取数据的方法。 该方法包括：对多个多电平存储器单元（MLC），在对应于MLC中的至少一个标志单元，基于所述结果选择性地执行上的MLC的第二读取操作执行第一读出操作的第一次读操作 第一感测操作，并且当执行第二读取操作时对所述至少一个标志单元执行第二感测操作。 在不执行第二读取操作时，基于第一读取操作和第一感测操作的结果输出读取数据，并且基于第一读取操作，第一感测操作，第二读取操作的结果来输出读取数据 以及执行第二读取操作时的第二感测操作。 读取数据对应于MLC中的编程数据。

    Waveguide structure and arrayed waveguide grating structure
    35.
    发明授权
    Waveguide structure and arrayed waveguide grating structure 有权
    波导结构和阵列波导光栅结构

    公开(公告)号：US07848602B2

    公开(公告)日：2010-12-07

    申请号：US12199517

    申请日：2008-08-27

    申请人： Duk-Jun Kim ,  Jung-Ho Song ,  Jong-Moo Lee ,  Junghyung Pyo ,  Gyung-Ock Kim

    发明人： Duk-Jun Kim ,  Jung-Ho Song ,  Jong-Moo Lee ,  Junghyung Pyo ,  Gyung-Ock Kim

    IPC分类号： G02B6/10 ,  G02B6/26 ,  G02B6/34 ,  G02B6/42

    CPC分类号： G02B6/12011 ,  G02B2006/12119

    摘要： Provided are a waveguide structure and an arrayed waveguide grating structure. The arrayed waveguide grating structure includes an input star coupler, an output star coupler, and a plurality of arrayed waveguides optically connecting the input star coupler and the output star coupler. Each of the arrayed waveguides includes at least one section having a high confinement factor and at least two sections having a relatively low confinement factor. The sections of the arrayed waveguides having a high confinement factor have the same structure.

    摘要翻译： 提供了一种波导结构和阵列波导光栅结构。 阵列波导光栅结构包括输入星形耦合器，输出星形耦合器以及光学地连接输入星形耦合器和输出星形耦合器的多个阵列波导。 每个阵列波导包括具有高约束因子的至少一个部分和具有相对较低约束因子的至少两个部分。 具有高约束因子的阵列波导的部分具有相同的结构。

    PHOTONICS DEVICE HAVING ARRAYED WAVEGUIDE GRATING STRUCTURES
    36.
    发明申请
    PHOTONICS DEVICE HAVING ARRAYED WAVEGUIDE GRATING STRUCTURES 审中-公开
    具有阵列波导光栅结构的光电器件

    公开(公告)号：US20100150499A1

    公开(公告)日：2010-06-17

    申请号：US12477907

    申请日：2009-06-04

    申请人： Duk-Jun Kim ,  Jung-Hyung Pyo ,  Jung-Ho Song ,  In-Gyoo Kim ,  Gyung-Ock Kim

    发明人： Duk-Jun Kim ,  Jung-Hyung Pyo ,  Jung-Ho Song ,  In-Gyoo Kim ,  Gyung-Ock Kim

    IPC分类号： G02B6/34 ,  G02B6/26

    CPC分类号： G02B6/12011

    摘要： Provided is a photonics device including at least two arrayed waveguide grating structures. Each of the arrayed waveguide grating structures of the photonics device includes an input star coupler, an output star coupler, and a plurality of arrayed waveguides optically connecting the input star coupler to the output star coupler. Each of the arrayed waveguides includes at least one first section having a high confinement factor and at least two second sections having a low confinement factor. The first sections of the arrayed waveguides have the same structure.

    摘要翻译： 提供了包括至少两个阵列波导光栅结构的光子器件。 光子器件的每个阵列波导光栅结构包括输入星形耦合器，输出星形耦合器和将输入星形耦合器光耦合到输出星形耦合器的多个阵列波导。 每个阵列波导包括具有高约束因子的至少一个第一部分和具有低约束因子的至少两个第二部分。 阵列波导的第一部分具有相同的结构。

    Ethylene Vinyl Acetate Based Polymer Foams with Low Density, Injection Preparation Method Thereof and a Material for Medical and Health-Care use
    37.
    发明申请
    Ethylene Vinyl Acetate Based Polymer Foams with Low Density, Injection Preparation Method Thereof and a Material for Medical and Health-Care use 审中-公开
    乙烯基乙酸乙烯酯基聚合物泡沫，低密度，注射制备方法和用于医疗和保健用途的材料

    公开(公告)号：US20090173906A1

    公开(公告)日：2009-07-09

    申请号：US11597727

    申请日：2006-10-20

    申请人： Young Kum Park ,  Ho Min Bae ,  Dong Ho Park ,  Ju-Yeon Lee ,  Jung Ho Song

    发明人： Young Kum Park ,  Ho Min Bae ,  Dong Ho Park ,  Ju-Yeon Lee ,  Jung Ho Song

    IPC分类号： C08L31/04 ,  H01F1/00 ,  B29C65/00

    CPC分类号： C08L31/04 ,  C08L23/0853 ,  C08L23/0869 ,  C08L33/08 ,  C08L2203/14 ,  C08L2666/06 ,  C08L2666/04

    摘要： The present invention relates to ethylene vinyl acetate based polymer foams with low density and superior injection molding characteristics, a preparation method thereof and a material for medical and health-care use using the same, more particularly to ethylene vinyl acetate based polymer foams with low density prepared by blending, masticating, pelletizing and foaming a matrix resin comprising ethylene vinyl acetate (EVA) resin and ethylene methyl acrylate (EMA) resin under specific condition, which has low density and superior injection molding characteristics and improved biocompatibility to human body, making them a useful environment-friendly material and particularly applicable to medical or health-care use, a preparation method thereof and a material for medical and health-care use using the same.

    摘要翻译： 本发明涉及具有低密度和优异的注射成型特性的乙烯 - 乙酸乙烯酯基聚合物泡沫，其制备方法和使用其的医疗和保健用途的材料，更具体地涉及低密度乙烯醋酸乙烯酯基聚合物泡沫 通过在特定条件下混合，咀嚼，造粒和发泡包含乙烯 - 乙酸乙烯酯（EVA）树脂和乙烯丙烯酸甲酯（EMA））树脂的基体树脂，其具有低密度和优异的注塑特性并改善与人体的生物相容性，使它们 一种有用的环境友好的材料，特别适用于医疗或保健用途，其制备方法和使用其的医疗和保健用途的材料。

    HIGH-POWER, BROAD-BAND, SUPERLUMINESCENT DIODE AND METHOD OF FABRICATING THE SAME
    38.
    发明申请
    HIGH-POWER, BROAD-BAND, SUPERLUMINESCENT DIODE AND METHOD OF FABRICATING THE SAME 有权
    高功率，宽带，超亮度二极管及其制造方法

    公开(公告)号：US20090152528A1

    公开(公告)日：2009-06-18

    申请号：US12118543

    申请日：2008-05-09

    申请人： Jung-Ho SONG ,  Ki-Soo Kim ,  Young-Ahn Leem ,  Gyung-Ock Kim

    发明人： Jung-Ho SONG ,  Ki-Soo Kim ,  Young-Ahn Leem ,  Gyung-Ock Kim

    IPC分类号： H01L29/06 ,  H01L21/02

    CPC分类号： H01L33/0045 ,  H01L33/02

    摘要： Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate.

    摘要翻译： 提供了具有高光功率和宽波长带的超发光二极管及其制造方法。 超发光二极管包括：至少一个高光限制因子（HOCF）区域; 以及具有比HOCF区域更低的光限制因子的至少一个低光限制因子（LOCF）区域。 该方法包括通过选择性区域生长方法获得HOCF区域和LOCF区域中的光限制因子的差异，所述选择性区域生长方法使用根据暴露衬底的开口的宽度差的薄层的沉积厚度差。