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    Test patterns and methods of controlling CMP process using the same
    33.
    发明申请
    Test patterns and methods of controlling CMP process using the same 失效

    公开(公告)号：US20050145602A1

    公开(公告)日：2005-07-07

    申请号：US11055505

    申请日：2005-02-10

    Applicant: Jeong-Heon Park ,  Bo-Un Yoon ,  Jae-Dong Lee

    Inventor： Jeong-Heon Park ,  Bo-Un Yoon ,  Jae-Dong Lee

    IPC: H01L21/66 ,  C03C25/68 ,  C23F1/00 ,  G01R31/26 ,  H01L21/4763 ,  H01L23/544 ,  H01L23/58

    CPC classification number: H01L22/32 ,  H01L22/34

    Abstract: A test pattern and a method of controlling a CMP using the same are provided. The test pattern is disposed on a monitoring region of a semiconductor substrate having a main region and a monitoring region. The test pattern includes a planar region and a pattern region. The method comprises setting a correlation between a step difference of a test pattern and an etched thickness of a main pattern, then applying the CMP to a semiconductor substrate having the test pattern and the main pattern for a predetermined time. The step difference of the test pattern is measured and the etched thickness of the main pattern, which corresponds to the step difference of the test pattern, is determined from the correlation. A polishing time is corrected by comparing the determined etched thickness of the main pattern with a reference value, and the corrected polishing time is applied to a subsequent lot or subsequent substrate.

    Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same
    34.
    发明授权
    Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same 失效
    化学/机械抛光浆料和化学机械抛光工艺以及采用其的浅沟槽隔离工艺

    公开(公告)号：US06914001B2

    公开(公告)日：2005-07-05

    申请号：US10351539

    申请日：2003-01-27

    Applicant: Jong-won Lee ,  Jae-dong Lee ,  Bo-un Yoon ,  Sang-rok Hah

    Inventor： Jong-won Lee ,  Jae-dong Lee ,  Bo-un Yoon ,  Sang-rok Hah

    IPC: B24B57/02 ,  B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/302

    CPC classification number: H01L21/31053 ,  C09G1/02 ,  C09K3/1463

    Abstract: A CMP oxide slurry includes an aqueous solution containing abrasive particles and two or more different passivation agents. Preferably, the aqueous solution is made up of deionized water, and the abrasive particles are a metal oxide selected from the group consisting of ceria, silica, alumina, titania, zirconia and germania. Also, a first passivation agent may be an anionic, cationic or nonionic surfactant, and a second passivation agent may be a phthalic acid and its salts. In one example, the first passivation agent is poly-vinyl sulfonic acid, and the second passivation agent is potassium hydrogen phthalate. The slurry exhibits a high oxide to silicon nitride removal selectivity.

    Abstract translation: CMP氧化物浆料包括含有磨料颗粒和两种或更多种不同钝化剂的水溶液。 优选地，水溶液由去离子水组成，磨料颗粒是选自二氧化铈，二氧化硅，氧化铝，二氧化钛，氧化锆和氧化锗的金属氧化物。 此外，第一钝化剂可以是阴离子，阳离子或非离子表面活性剂，第二钝化剂可以是邻苯二甲酸及其盐。 在一个实例中，第一钝化剂是聚乙烯基磺酸，第二钝化剂是邻苯二甲酸氢钾。 该浆料表现出高的氧化物与氮化硅的去除选择性。

    CMP slurry for forming aluminum film, CMP method using the slurry, and method for forming aluminum wiring using the CMP method
    35.
    发明申请
    CMP slurry for forming aluminum film, CMP method using the slurry, and method for forming aluminum wiring using the CMP method 有权
    用于形成铝膜的CMP浆料，使用该浆料的CMP方法以及使用CMP方法形成铝布线的方法

    公开(公告)号：US20050112894A1

    公开(公告)日：2005-05-26

    申请号：US10961411

    申请日：2004-10-12

    Applicant: Jeong-heon Park ,  Jae-dong Lee ,  Sung-jun Kim ,  Chang-ki Hong

    Inventor： Jeong-heon Park ,  Jae-dong Lee ,  Sung-jun Kim ,  Chang-ki Hong

    IPC: H01L21/304 ,  C09G1/02 ,  H01L21/321 ,  H01L21/768 ,  H01L21/302 ,  H01L21/461

    CPC classification number: C09G1/02 ,  H01L21/3212 ,  H01L21/7684

    Abstract: A first chemical mechanical polishing (CMP) slurry includes a polishing agent, an oxidant, a pH control additive, and an oxide film removal retarder which reduces a removal rate of the silicon oxide film. A second chemical mechanical polishing (CMP) slurry includes a polishing agent, an oxidant, a pH control additive, an oxide film removal retarder which reduces a removal rate of silicon oxide, and a defect prevention agent which inhibits scratch defects and/or corrosion defects at a surface of an aluminum film. In a one-step CMP process, either of the first or second slurry is used throughout CMP of an aluminum layer until an upper surface of an underlying silicon oxide layer is exposed. In a two-step CMP process, the first slurry is used in an initial CMP of the aluminum layer, and then the second slurry is used in a subsequent CMP until the upper surface of the underlying silicon layer is exposed.

    Abstract translation: 第一化学机械抛光（CMP）浆料包括抛光剂，氧化剂，pH控制添加剂和降低氧化硅膜去除速率的氧化膜去除延迟剂。 第二化学机械抛光（CMP）浆料包括抛光剂，氧化剂，pH控制添加剂，降低氧化硅去除速率的氧化膜去除延迟剂，以及抑制刮擦缺陷和/或腐蚀缺陷的缺陷防止剂 在铝膜的表面。 在一步CMP工艺中，在铝层的整个CMP中使用第一或第二浆料中的任何一种，直到暴露底层氧化硅层的上表面。 在两步CMP工艺中，第一浆料用于铝层的初始CMP，然后将第二浆料用于随后的CMP，直到暴露下层硅层的上表面。

    Method of controlling wafer polishing time using sample-skip algorithm and wafer polishing using the same
    36.
    发明授权
    Method of controlling wafer polishing time using sample-skip algorithm and wafer polishing using the same 有权

    公开(公告)号：US06517412B2

    公开(公告)日：2003-02-11

    申请号：US09951506

    申请日：2001-09-14

    Applicant: Jae-dong Lee ,  Bo-un Yoon ,  Kyoung-mo Yang ,  Sang-rok Hah

    Inventor： Jae-dong Lee ,  Bo-un Yoon ,  Kyoung-mo Yang ,  Sang-rok Hah

    IPC: B24B4900

    CPC classification number: B24B37/013 ,  B24B37/042 ,  B24B49/02

    Abstract: A method of controlling a wafer polishing time using a sample-skip algorithm and a method of polishing a wafer using the same are provided. According to the method of controlling a wafer polishing time, a chemical mechanical polishing (CMP) process is performed on a plurality of wafers of an n-th lot among a plurality of lots, each lot consisting of a plurality of wafers, for a time &Dgr;t(n), to calculate the amount removed &Dgr;ToxP(n) from a polished layer on the wafer. The removal rate RRb(n) of a layer on a blanket wafer is calculated from the amount removed &Dgr;ToxP(n). A CMP time &Dgr;t(n+1) is determined for wafers of an n+1-th lot using the relationship equation &Dgr;t(n+1)={&Dgr;ToxT(n+1)+A}/RRb(n) where “A” is a constant and &Dgr;ToxT(n+1) is the target amount of a layer to be removed from a wafer of an n+1-th lot.

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