利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

52 条记录 (耗时 0.036 秒)

    Methods for depositing metal films onto diffusion barrier layers by CVD or ALD processes
    32.
    发明授权
    Methods for depositing metal films onto diffusion barrier layers by CVD or ALD processes 失效
    通过CVD或ALD工艺将金属膜沉积到扩散阻挡层上的方法

    公开(公告)号：US07985449B2

    公开(公告)日：2011-07-26

    申请号：US11738187

    申请日：2007-04-20

    申请人： Diwakar Garg ,  Hansong Cheng ,  John Anthony Thomas Norman ,  Eduardo Machado ,  Pablo Ordejon

    发明人： Diwakar Garg ,  Hansong Cheng ,  John Anthony Thomas Norman ,  Eduardo Machado ,  Pablo Ordejon

    IPC分类号： C23C16/06

    CPC分类号： H01L21/76843 ,  C23C14/58 ,  C23C14/5846 ,  H01L21/28556 ,  H01L21/3205 ,  H01L21/32051 ,  H01L21/76856 ,  H01L21/76876

    摘要： A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, or mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.

    摘要翻译： 描述了在其上沉积有扩散阻挡层的衬底表面上沉积金属膜的方法。 在本发明的一个实施方案中，该方法包括：提供基本上不含元素金属的扩散阻挡层的表面，并通过使用有机金属前体沉积在至少部分表面上形成金属膜。 在某些实施方案中，扩散阻挡层可以在形成步骤的至少一部分之前或期间暴露于粘合促进剂。 合适的粘合促进剂包括氮，含氮化合物，含碳化合物，含碳和氮的化合物，含硅化合物，含硅和碳的化合物，硅，碳和氮的化合物或其混合物。 本发明的方法提供了在扩散阻挡层和金属膜之间具有增强的粘附性的基底。

    Liquid Precursor for Depositing Group 4 Metal Containing Films
    33.
    发明申请
    Liquid Precursor for Depositing Group 4 Metal Containing Films 有权
    用于沉积第4组含金属膜的液体前体

    公开(公告)号：US20110135838A1

    公开(公告)日：2011-06-09

    申请号：US12950352

    申请日：2010-11-19

    申请人： Xinjian Lei ,  John Anthony Thomas Norman ,  Daniel P. Spence

    发明人： Xinjian Lei ,  John Anthony Thomas Norman ,  Daniel P. Spence

    IPC分类号： C23C16/30 ,  C07F7/28 ,  C23C16/44 ,  C23C16/50 ,  C23C16/48 ,  C23C16/56

    CPC分类号： C07F17/00 ,  C07F7/003

    摘要： The present invention is related to a family of liquid group 4 precursors represented by the formula: (pyr*)M(OR1)(OR2)(OR3) wherein pyr* is an alkyl substituted pyrrolyl, wherein M is group 4 metals include Ti, Zr, and Hf; wherein R1-3 can be same or different and selected from group consisting of linear or branched C1-6 alkyls; preferably C1-3 alkyls; R4 is selected from the group consisting of C1-6 alkyls, preferably branched C3-5 alkyls substituted at 2, 5 positions to prevent the pyrrolyl coordinated to the metal center in η1 fashion; n=2, 3, 4. Most preferably the invention is directed to (2,5-di-tert-butylpyrrolyl)(tris(ethoxy)titanium, (2,5-di-tert-amylpyrrolyl)(tris(ethoxy)titanium, and (2,5-di-tert-amylpyrrolyl)(tris(iso-propoxy)titanium. The invention is also directed to (cyclopentadienyl)(2,5-di-methylpyrrolyl)(bis(ethoxy))titanium. Deposition methods using these compounds are also contemplated.

    摘要翻译： 本发明涉及一种由式（pyr *）M（OR1）（OR2）（OR3）表示的液体组4前体，其中pyr *是烷基取代的吡咯基，其中M是第4族金属包括Ti， Zr和Hf; 其中R1-3可以相同或不同，并且选自直链或支链C 1-6烷基; 优选C 1-3烷基; R 4选自C 1-6烷基，优选在2,5位取代的支链C 3-5烷基，以防止以“1”方式与金属中心配位的吡咯基; 最优选本发明涉及（2,5-二叔丁基吡咯基）（三（乙氧基）钛，（2,5-二叔戊基吡咯基）（三（乙氧基）钛 本发明还涉及（环戊二烯基）（2,5-二甲基吡咯基）（双（乙氧基））钛。沉积方法 也考虑使用这些化合物。

    Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides
    35.
    发明授权
    Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides 有权
    Ti，Ta，Hf，Zr和金属硅氮化物的ALD / CVD的相关金属硅酰胺，氧化物或氮氧化物

    公开(公告)号：US07754906B2

    公开(公告)日：2010-07-13

    申请号：US11522768

    申请日：2006-09-18

    申请人： John Anthony Thomas Norman ,  Xinjian Lei

    发明人： John Anthony Thomas Norman ,  Xinjian Lei

    IPC分类号： C07F7/18

    CPC分类号： C07F11/005 ,  C07F7/003 ,  C07F9/005

    摘要： An organometallic complex represented by the structure: wherein M is a metal selected from Group 4 of the Periodic Table of the Elements and R1-4 can be same or different selected from the group consisting of dialkylamide, difluoralkylamide, hydrogen, alkyl, alkoxy, fluoroalkyl and alkoxy, cycloaliphatic, and aryl with the additional provision that when R1 and R2 are dialkylamide, difluoralkylamide, alkoxy, fluoroalkyl and alkoxy, they can be connected to form a ring. Related compounds are also disclosed. CVD and ALD deposition processes using the complexes are also included.

    摘要翻译： 由以下结构表示的有机金属络合物：其中M是选自元素周期表第4族的金属和R1-4可以相同或不同，选自二烷基酰胺，二氟烷基酰胺，氢，烷基，烷氧基，氟代烷基 和烷氧基，脂环族和芳基，另外条件是当R1和R2是二烷基酰胺，二氟烷基酰胺，烷氧基，氟代烷基和烷氧基时，它们可以连接形成环。 还公开了相关化合物。 还包括使用复合物的CVD和ALD沉积方法。

    Process for Forming Continuous Copper Thin Films Via Vapor Deposition
    36.
    发明申请
    Process for Forming Continuous Copper Thin Films Via Vapor Deposition 有权
    通过气相沉积形成连续铜薄膜的工艺

    公开(公告)号：US20080318418A1

    公开(公告)日：2008-12-25

    申请号：US12139585

    申请日：2008-06-16

    申请人： John Anthony Thomas Norman

    发明人： John Anthony Thomas Norman

    IPC分类号： H01L21/44 ,  C30B25/00

    CPC分类号： H01L21/28556 ,  C23C16/04 ,  C23C16/18 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76877

    摘要： A process for preparing a multi-layer substrate is described herein. In one embodiment, the process provides a multi-layer substrate comprising a first layer and a second layer where the process comprises the steps of providing the first layer comprising a barrier area and a copper area; and depositing the second layer comprising copper onto the first layer wherein the depositing provides the second layer comprising a first thickness ranging from about 20 Angstroms to about 2,000 Angstroms onto the barrier area and a second thickness ranging from about 0 Angstroms to about 1,000 Angstroms onto the copper area in the first layer wherein the first thickness is greater than the second thickness.

    摘要翻译： 本文描述了制备多层基底的方法。 在一个实施例中，该方法提供了包括第一层和第二层的多层衬底，其中该方法包括提供包括阻挡区域和铜区域的第一层的步骤; 以及将包含铜的所述第二层沉积到所述第一层上，其中所述沉积提供所述第二层，所述第二层包括从所述阻挡区域上的约20埃到约2000埃的第一厚度，以及从约0埃到约1,000埃的第二厚度 第一层中的铜区域，其中第一厚度大于第二厚度。

    Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes
    39.
    发明授权
    Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes 失效
    通过CVD或ALD工艺在扩散阻挡层上沉积金属膜的方法

    公开(公告)号：US07311946B2

    公开(公告)日：2007-12-25

    申请号：US10428447

    申请日：2003-05-02

    申请人： Diwakar Garg ,  Hansong Cheng ,  John Anthony Thomas Norman ,  Eduardo Machado ,  Pablo Ordejon

    发明人： Diwakar Garg ,  Hansong Cheng ,  John Anthony Thomas Norman ,  Eduardo Machado ,  Pablo Ordejon

    IPC分类号： B05D1/36 ,  C23C16/30 ,  H05H1/24

    CPC分类号： H01L21/76843 ,  C23C14/58 ,  C23C14/5846 ,  H01L21/28556 ,  H01L21/3205 ,  H01L21/32051 ,  H01L21/76856 ,  H01L21/76876

    摘要： A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, or mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.

    摘要翻译： 描述了在其上沉积有扩散阻挡层的衬底表面上沉积金属膜的方法。 在本发明的一个实施方案中，该方法包括：提供基本上不含元素金属的扩散阻挡层的表面，并通过使用有机金属前体沉积在至少部分表面上形成金属膜。 在某些实施方案中，扩散阻挡层可以在形成步骤的至少一部分之前或期间暴露于粘合促进剂。 合适的粘合促进剂包括氮，含氮化合物，含碳化合物，含碳和氮的化合物，含硅化合物，含硅和碳的化合物，硅，碳和氮的化合物或其混合物。 本发明的方法提供了在扩散阻挡层和金属膜之间具有增强的粘附性的基底。

    Volatile metal β-ketoiminate and metal β-diiminate complexes
    40.
    发明授权
    Volatile metal β-ketoiminate and metal β-diiminate complexes 有权
    挥发性金属β-酮亚胺酸盐和金属β-二亚胺络合物

    公开(公告)号：US07205422B2

    公开(公告)日：2007-04-17

    申请号：US11111452

    申请日：2005-04-21

    申请人： John Anthony Thomas Norman

    发明人： John Anthony Thomas Norman

    IPC分类号： C07F1/08 ,  C07F15/00 ,  H01L29/08 ,  H01L35/24 ,  C23C16/00

    CPC分类号： C07F1/005 ,  C23C16/18

    摘要： Metal ketoiminate or diiminate complexes, containing copper, silver, gold, cobalt, ruthenium, rhodium, platinum, palladium, nickel, osmium, or indium, and methods for making and using same are described herein. In certain embodiments, the metal complexes described herein may be used as precursors to deposit metal and metal-containing films on a substrate through, for example, atomic layer deposition or chemical vapor deposition conditions.

    摘要翻译： 本文描述了含有铜，银，金，钴，钌，铑，铂，钯，镍，锇或铟的金属酮亚胺酯或二亚胺络合物及其制备和使用方法。 在某些实施方案中，本文所述的金属络合物可用作通过例如原子层沉积或化学气相沉积条件在基底上沉积金属和含金属膜的前体。