利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

97 条记录 (耗时 0.019 秒)

    Semiconductor Device
    31.
    发明申请
    Semiconductor Device 有权
    半导体器件

    公开(公告)号：US20080210928A1

    公开(公告)日：2008-09-04

    申请号：US11547632

    申请日：2005-10-18

    申请人： Hiroko Abe ,  Yuji Iwaki ,  Mikio Yukawa ,  Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Yoshitaka Moriya

    发明人： Hiroko Abe ,  Yuji Iwaki ,  Mikio Yukawa ,  Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Yoshitaka Moriya

    IPC分类号： H01L51/10 ,  H01L27/108 ,  H01L33/00

    CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C13/00 ,  G11C17/14 ,  G11C17/143 ,  G11C17/16 ,  H01L27/285 ,  H01L51/0051 ,  H01L51/0059

    摘要： The present invention provides a semiconductor device which has a storage element having a simple structure in which an organic compound layer is sandwiched between a pair of conductive layers and a manufacturing method of such a semiconductor device. With this characteristic, a semiconductor device having a storage circuit which is nonvolatile, additionally recordable, and easily manufactured and a manufacturing method of such a semiconductor device are provided. A semiconductor device according to the present invention has a plurality of field-effect transistors provided over an insulating layer and a plurality of storage elements provided over the plurality of field-effect transistors. Each of the plurality of field-effect transistors uses a single-crystal semiconductor layer as a channel portion and each of the plurality of storage elements is an element in which a first conductive layer, an organic compound layer, and a second conductive layer are stacked in order.

    摘要翻译： 本发明提供一种半导体器件，其具有其中有机化合物层夹在一对导电层之间的简单结构的存储元件和这种半导体器件的制造方法。 利用该特征，提供了具有非易失性，可追加记录和容易制造的存储电路的半导体器件和这种半导体器件的制造方法。 根据本发明的半导体器件具有设置在绝缘层上的多个场效应晶体管和设置在多个场效应晶体管上的多个存储元件。 多个场效应晶体管中的每一个使用单晶半导体层作为沟道部分，并且多个存储元件中的每一个是其中堆叠第一导电层，有机化合物层和第二导电层的元件 为了。

    Device, and method for manufacturing the same
    32.
    发明申请
    Device, and method for manufacturing the same 失效
    装置及其制造方法

    公开(公告)号：US20080128517A1

    公开(公告)日：2008-06-05

    申请号：US11987124

    申请日：2007-11-27

    申请人： Mikio Yukawa ,  Nozomu Sugisawa ,  Takaaki Nagata ,  Shuhei Yoshitomi ,  Michiko Aizawa

    发明人： Mikio Yukawa ,  Nozomu Sugisawa ,  Takaaki Nagata ,  Shuhei Yoshitomi ,  Michiko Aizawa

    IPC分类号： G06K19/07 ,  H01L21/84

    CPC分类号： H01L51/105 ,  G11C13/0016 ,  G11C13/004 ,  H01L27/283 ,  H01L51/006 ,  H01L51/0591

    摘要： In a method for manufacturing a flexible memory device and semiconductor device, a stack including an element layer and an insulating layer which seals the element layer is formed over a substrate having a separation layer, and the stack is separated from the separation layer. The element layer includes a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, and at least one of the pair of electrode layers is formed using an alloy layer containing tin. The flexible memory device and semiconductor device include a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, in which at least one of the pair of electrode layers is formed using an alloy layer containing tin.

    摘要翻译： 在制造柔性存储器件和半导体器件的方法中，在具有分离层的衬底上形成包括元件层和密封元件层的绝缘层的堆叠，并且将堆叠与分离层分离。 元件层包括在一对电极，第一电极层和第二电极层之间具有含有有机化合物的层的存储元件，并且使用含有锡的合金层形成所述一对电极层中的至少一个。 柔性存储器件和半导体器件包括具有在一对电极之间含有有机化合物的层的存储元件，第一电极层和第二电极层，其中使用合金形成一对电极层中的至少一个 含锡层。

    Semiconductor Device and Manufacturing Method Thereof
    33.
    发明申请
    Semiconductor Device and Manufacturing Method Thereof 有权
    半导体器件及其制造方法

    公开(公告)号：US20080093462A1

    公开(公告)日：2008-04-24

    申请号：US11587531

    申请日：2005-11-28

    申请人： Hiroko Abe ,  Mikio Yukawa ,  Ryoji Nomura ,  Satoshi Seo ,  Shunpei Yamazaki

    发明人： Hiroko Abe ,  Mikio Yukawa ,  Ryoji Nomura ,  Satoshi Seo ,  Shunpei Yamazaki

    IPC分类号： G06K19/06

    CPC分类号： H01L27/10 ,  B82Y10/00 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0014 ,  G11C17/16 ,  G11C2213/32 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/12 ,  H01L27/28 ,  H01L27/283 ,  H01L29/78645 ,  H01L51/0059

    摘要： It is an object of the present invention to provide a semiconductor device having a memory circuit which is nonvolatile and able to be written additionally, an antenna which can be easily manufactured, and to provide a manufacturing method thereof. In addition, it is an object of the present invention to prevent unauthorized rewriting of information of a wireless chip and forgery of a wireless chip itself and to ensure a security of a wireless chip. In view of the foregoing, the present invention provides an IC tag in which information thereof is identified by wireless communication signal and also information of a memory in an IC tag (a memory which can not be rewritten) is identified by an optical reading device. A memory in an IC tag according to the present invention has an identification surface with which information can be identified by an optical reading device.

    摘要翻译： 本发明的目的是提供一种具有非易失性且能够被写入的存储电路的半导体器件，可容易地制造的天线，并提供其制造方法。 此外，本发明的目的是防止无线芯片的信息的未经授权的重写和无线芯片本身的伪造并且确保无线芯片的安全性。 鉴于上述情况，本发明提供了一种IC标签，其中通过无线通信信号识别信息，并且还通过光学读取装置识别IC标签（不能被重写的存储器）中的存储器的信息。 根据本发明的IC标签中的存储器具有可由光学读取装置识别信息的识别表面。

    Memory element and semiconductor device
    34.
    发明申请
    Memory element and semiconductor device 有权
    存储元件和半导体器件

    公开(公告)号：US20080017849A1

    公开(公告)日：2008-01-24

    申请号：US11713751

    申请日：2007-03-05

    申请人： Mikio Yukawa ,  Nozomu Sugisawa

    发明人： Mikio Yukawa ,  Nozomu Sugisawa

    IPC分类号： H01L51/10

    CPC分类号： H01L27/13 ,  H01L27/101

    摘要： It is an object of the present invention to reduce variations in behavior of each memory element. In addition, it is another object of the present invention to obtain a semiconductor device, on which the memory element is mounted, which is superior in terms of performance and reliability. A memory element of the present invention includes in its structure a first conductive layer; a semiconductor layer; an organic compound layer; and a second conductive layer, where the semiconductor layer and the organic compound layer are interposed between the first conductive layer and the second conductive layer, and the semiconductor layer is formed to be in contact with the first conductive layer and/or the second conductive layer. With such a structure, variations in behavior of each memory element are reduced.

    摘要翻译： 本发明的目的是减少每个存储元件的行为变化。 此外，本发明的另一个目的是获得其性能和可靠性方面优于其上安装有存储元件的半导体器件。 本发明的记忆元件在其结构中包括第一导电层; 半导体层; 有机化合物层; 以及第二导电层，其中半导体层和有机化合物层介于第一导电层和第二导电层之间，并且半导体层形成为与第一导电层和/或第二导电层接触 。 利用这种结构，减少了每个存储元件的行为变化。

    Memory device and semiconductor device
    35.
    发明申请
    Memory device and semiconductor device 有权
    存储器件和半导体器件

    公开(公告)号：US20060246269A1

    公开(公告)日：2006-11-02

    申请号：US11411829

    申请日：2006-04-27

    申请人： Mikio Yukawa

    发明人： Mikio Yukawa

    IPC分类号： B32B3/00

    CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/79 ,  Y10T428/24917

    摘要： The present invention provides an involatile memory device that is capable of data writing and erasing at a time other than during manufacturing, and a semiconductor device having the memory device. Also, the present invention provides a compact-sized and inexpensive involatile memory device and a semiconductor device having the memory device. A memory device of the present invention includes a first conductive layer and a second conductive layer of which at least one has a light transmitting property, and an organic compound layer that is in contact with the first conductive layer or the second conductive layer. The organic compound layer includes conductive particles that are dispersed within the layer, and the organic compound included in the organic compound layer has a site that can photoisomerize.

    摘要翻译： 本发明提供了一种非易失性存储器件，其能够在制造期间以外的时间进行数据写入和擦除，以及具有存储器件的半导体器件。 此外，本发明提供了一种紧凑型和便宜的非易失性存储器件以及具有存储器件的半导体器件。 本发明的存储器件包括第一导电层和至少一个具有透光性的第二导电层，以及与第一导电层或第二导电层接触的有机化合物层。 有机化合物层包括分散在该层内的导电性粒子，有机化合物层中所含的有机化合物具有能够光异构化的部位。

    Organic laser apparatus
    36.
    发明申请
    Organic laser apparatus 审中-公开
    有机激光装置

    公开(公告)号：US20050047458A1

    公开(公告)日：2005-03-03

    申请号：US10874378

    申请日：2004-06-24

    申请人： Ryoji Nomura ,  Hiroko Abe ,  Mikio Yukawa

    发明人： Ryoji Nomura ,  Hiroko Abe ,  Mikio Yukawa

    IPC分类号： H01L51/50 ,  H01L51/52 ,  H01S3/14 ,  H01S3/17 ,  H01S5/042 ,  H01S5/12 ,  H01S5/183 ,  H01S5/20 ,  H01S5/36 ,  H05B33/14 ,  H05B33/24

    CPC分类号： H01S5/18305 ,  H01L51/5012 ,  H01L51/5048 ,  H01L51/5265 ,  H01S5/0425 ,  H01S5/1096 ,  H01S5/12 ,  H01S5/2004 ,  H01S5/2027 ,  H01S5/36 ,  H01S2301/04

    摘要： The invention is an organic laser apparatus including an organic compound that radiates laser light when current is injected. In an organic compound layer employed for the laser apparatus of the invention, a laminated structure and film thickness of each layer are determined in consideration of wavelength so as to radiate laser light. The organic compound layer collectively means each thin film containing mainly an organic compound formed between a pair of electrodes. The organic compound layer is formed so as to be sandwiched between a pair of electrodes and, preferably, formed by a plurality of layers each having a different carrier transport property and a different light emission wavelength. In addition, it is preferable to form a so-called resonator structure, in which a reflector is provided between the pair of electrodes.

    摘要翻译： 本发明是一种有机激光装置，其包括在注入电流时照射激光的有机化合物。 在本发明的激光装置中使用的有机化合物层中，考虑到波长来确定各层的层叠结构和膜厚以发射激光。 有机化合物层是指主要含有形成在一对电极之间的有机化合物的薄膜。 有机化合物层形成为夹在一对电极之间，优选由具有不同载流子传输性和不同发光波长的多个层形成。 此外，优选形成所谓的谐振器结构，其中反射器设置在该对电极之间。

    METHOD FOR FORMING GRAPHENE AND CRAPHENE OXIDE SALT, AND GRAPHENE OXIDE SALT
    39.
    发明申请
    METHOD FOR FORMING GRAPHENE AND CRAPHENE OXIDE SALT, AND GRAPHENE OXIDE SALT 审中-公开
    形成石墨和氧化镍盐的方法和氧化亚烷基盐

    公开(公告)号：US20130045156A1

    公开(公告)日：2013-02-21

    申请号：US13570405

    申请日：2012-08-09

    申请人： Kuniharu Nomoto ,  Nobuhiro Inoue ,  Mikio Yukawa ,  Tatsuya Ikenuma

    发明人： Kuniharu Nomoto ,  Nobuhiro Inoue ,  Mikio Yukawa ,  Tatsuya Ikenuma

    IPC分类号： C01B31/02 ,  C07C51/16 ,  C07C51/29 ,  C07C51/305 ,  C07C233/64 ,  C07C63/42 ,  C07C39/235 ,  C07C231/10 ,  C07C37/64 ,  B82Y30/00 ,  B82Y40/00

    CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/192 ,  C01B32/23 ,  H01M4/366 ,  H01M4/625 ,  H01M10/0525

    摘要： A first precipitate is formed by mixing graphite and an oxidizer containing an alkali metal salt in a solution. Next, a second precipitate is formed by ionizing the oxidizer which is included in the first precipitate, with an acid solution, and removing the oxidizer from the first precipitate. Then, a dispersion liquid in which graphene oxide is dispersed is prepared by mixing the second precipitate and water to form a mixed solution and then applying ultrasonic waves to the mixed solution or mechanically stirring the mixed solution, so that the graphene oxide is separated from graphite oxide that is the graphite which is included in the second precipitate and oxidized. Next, graphene oxide salt is formed by mixing the dispersion liquid, a basic solution, and an organic solvent and reacting the graphene oxide included in the dispersion liquid and a base included in the basic solution to each other.

    摘要翻译： 通过在溶液中混合石墨和含有碱金属盐的氧化剂来形成第一沉淀物。 接下来，通过用酸溶液离子化包含在第一沉淀物中的氧化剂，并从第一沉淀物中除去氧化剂，形成第二沉淀物。 然后，通过将第二沉淀物和水混合以形成混合溶液，然后向混合溶液中施加超声波或机械搅拌混合溶液，制备分散有石墨烯氧化物的分散液，使得氧化石墨烯与石墨烯分离 氧化物，其是包含在第二沉淀中并被氧化的石墨。 接着，通过将分散液，碱性溶液和有机溶剂混合并使包含在分散液中的石墨烯和基础溶液中所含的碱彼此反应形成氧化石墨烯盐。