Surface emitting laser with trenches to define conductive regions
    31.
    发明授权
    Surface emitting laser with trenches to define conductive regions 有权
    具有沟槽的表面发射激光器以限定导电区域

    公开(公告)号:US08188487B2

    公开(公告)日:2012-05-29

    申请号:US12837039

    申请日:2010-07-15

    Inventor: Mitsuhiro Ikuta

    Abstract: A surface emitting laser includes a lower multilayer mirror, an active layer, and an upper multilayer mirror stacked onto a substrate. A first current confinement layer having a first electrically conductive region and a first insulating region is formed above or below the active layer using a first trench structure. A second current confinement layer having a second electrically conductive region and a second insulating region is formed above or below the first current confinement layer using a second trench structure. The first and second trench structures extend from a top surface of the upper multilayer mirror towards the substrate such that the second trench structure surrounds the first trench structure. When the surface emitting laser is viewed in an in-plane direction of the substrate, a boundary between the first electrically conductive region and the first insulating region is disposed inside the second electrically conductive region.

    Abstract translation: 表面发射激光器包括层叠在基板上的下多层反射镜,有源层和上多层反射镜。 使用第一沟槽结构在有源层的上方或下方形成具有第一导电区域和第一绝缘区域的第一电流限制层。 使用第二沟槽结构在第一电流限制层的上方或下方形成具有第二导电区域和第二绝缘区域的第二电流限制层。 第一和第二沟槽结构从上多层反射镜的顶表面延伸到衬底,使得第二沟槽结构围绕第一沟槽结构。 当在基板的面内方向上观察表面发射激光时,第一导电区域和第一绝缘区域之间的边界设置在第二导电区域的内部。

    ELECTROPHOTOGRAPHIC IMAGE FORMING APPARATUS
    32.
    发明申请
    ELECTROPHOTOGRAPHIC IMAGE FORMING APPARATUS 有权
    电子图像形成装置

    公开(公告)号:US20110115871A1

    公开(公告)日:2011-05-19

    申请号:US12909447

    申请日:2010-10-21

    Inventor: Mitsuhiro Ikuta

    CPC classification number: B41J2/45

    Abstract: Provided is an electrophotographic image forming apparatus using a novel array light source to replace the LED array light sources, which enables provision of a reduced image formation spot diameter on a photoreceptor as well as a reduced spot pitch. An electrophotographic image forming apparatus according to the present invention includes an electrophotographic image forming apparatus including a light source, and an electrophotographic photoreceptor to be exposed by the light source, the light source for exposing the electrophotographic photoreceptor including: a plurality of surface plasmon waveguides for forming a potential distribution on the electrophotographic photoreceptor using near-field light generated at tips thereof, the surface plasmon waveguides being arrayed: and an excitation mechanism for exciting a surface plasmon on each of the plurality of surface plasmon waveguides.

    Abstract translation: 提供一种电子照相图像形成装置,其使用新颖的阵列光源来代替LED阵列光源,其能够在感光体上提供缩小的图像形成光斑直径以及减小的光点间距。 根据本发明的电子照相图像形成装置包括电子照相图像形成装置,其包括光源和由光源曝光的电子照相感光体,用于曝光电子照相感光体的光源包括:多个表面等离子体波导,用于 使用在其顶端产生的近场光在电子照相感光体上形成电势分布,排列表面等离子体波导;以及激励机构,用于激发多个表面等离子体波导中的每一个上的表面等离子体激元。

    Surface emitting laser
    33.
    发明授权
    Surface emitting laser 有权
    表面发射激光

    公开(公告)号:US07940826B2

    公开(公告)日:2011-05-10

    申请号:US12377934

    申请日:2008-10-08

    Inventor: Mitsuhiro Ikuta

    CPC classification number: H01S5/18 H01S5/105 H01S5/187 H01S5/2004 H01S5/2027

    Abstract: When configuring a surface emitting laser by a semiconductor material not capable of largely extracting a refractive-index difference, the surface emitting laser using a photonic crystal capable of forming a waveguide is provided.

    Abstract translation: 当通过不能很大程度地提取折射率差的半导体材料配置表面发射激光器时,提供了使用能够形成波导的光子晶体的表面发射激光器。

    SURFACE EMITTING LASER MANUFACTURING METHOD, SURFACE EMITTING LASER ARRAY MANUFACTURING METHOD, SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY
    34.
    发明申请
    SURFACE EMITTING LASER MANUFACTURING METHOD, SURFACE EMITTING LASER ARRAY MANUFACTURING METHOD, SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY 有权
    表面发射激光制造方法,表面发射激光阵列制造方法,表面发射激光,表面发射激光阵列和包括表面发射激光阵列的光学装置

    公开(公告)号:US20110076058A1

    公开(公告)日:2011-03-31

    申请号:US12958987

    申请日:2010-12-02

    Abstract: Provided is a surface emitting laser manufacturing method, etc., which reduces process damage occurring to a surface relief structure, enabling stable provision of a single transverse mode characteristic. Provided is a method including a surface relief structure for controlling a reflectance in a light emitting portion of an upper mirror, the surface relief structure including a stepped structure, includes: forming a resist pattern including a pattern for forming a mesa structure and a pattern for forming a stepped structure, on or above the upper mirror, and performing first-phase etching for etching the surface layer of the upper mirror to determine the horizontal position of the stepped structure; forming a current confining structure after the performing first-phase etching; and performing second-phase etching for further etching the area that the first-phase etching has been performed, to determine the depth position of the stepped structure, after the forming a current confining structure.

    Abstract translation: 本发明提供了一种表面发射激光制造方法等,其减少了对表面起伏结构发生的工艺损伤,能够稳定地提供单一横模特性。 提供了一种包括用于控制上反射镜的发光部分中的反射率的表面浮雕结构的方法,所述表面浮雕结构包括阶梯结构,包括:形成包括用于形成台面结构的图案的抗蚀剂图案和用于形成台阶结构的图案 在上反射镜上或上方形成台阶结构,并执行用于蚀刻上镜的表面层的第一相蚀刻以确定阶梯结构的水平位置; 在执行第一相蚀刻之后形成电流限制结构; 并且在形成电流限制结构之后,执行第二相蚀刻以进一步蚀刻已经执行第一相蚀刻的区域,以确定阶梯结构的深度位置。

    Surface emitting laser
    35.
    发明授权
    Surface emitting laser 有权
    表面发射激光

    公开(公告)号:US07869483B2

    公开(公告)日:2011-01-11

    申请号:US12425745

    申请日:2009-04-17

    CPC classification number: H01S5/187 H01S5/105 H01S5/3211 H01S5/32341

    Abstract: A surface emitting laser which oscillates at a wavelength λ of a blue band, including a photonic crystal layer including a photonic crystal structure, an active layer provided on one surface of the photonic crystal layer, and an electrode provided on the other surface of the photonic crystal layer for injecting electric current into the active layer. The photonic crystal structure has a thickness of 100 nm or more. A laser beam is emitted toward a direction opposite to a side of the photonic crystal layer on which the electrode is provided.

    Abstract translation: 一种表面发射激光器,其以包括光子晶体结构的光子晶体层,设置在光子晶体层的一个表面上的有源层和设置在光子晶体的另一个表面上的电极在蓝色波段的波长λ处振荡 用于将电流注入有源层的晶体层。 光子晶体结构的厚度为100nm以上。 激光束朝向与设置有电极的光子晶体层的一侧相反的方向发射。

    PROCESS FOR PRODUCING SURFACE EMITTING LASER, PROCESS FOR PRODUCING SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY PRODUCED BY THE PROCESS
    36.
    发明申请
    PROCESS FOR PRODUCING SURFACE EMITTING LASER, PROCESS FOR PRODUCING SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY PRODUCED BY THE PROCESS 有权
    用于生产表面发射激光的工艺,用于生产表面发射激光阵列的工艺,以及包括由工艺生产的表面发射激光阵列的光学装置

    公开(公告)号:US20100029030A1

    公开(公告)日:2010-02-04

    申请号:US12509551

    申请日:2009-07-27

    Abstract: Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first dielectric film, a first pattern for defining a mesa structure and a second pattern for defining the surface relief structure in the same process; and forming a second dielectric film on the first dielectric film and a surface of the laminated semiconductor layers to which the first pattern and the second pattern have been transferred. Accordingly, a center position of the surface relief structure can be aligned with a center position of a current confinement structure at high precision.

    Abstract translation: 提供一种制造表面发射激光器的方法,该表面发射激光器包括设置在层叠半导体层上的表面浮雕结构,包括以下步骤:向第一电介质膜转移用于限定台面结构的第一图案和用于限定表面浮雕的第二图案 结构在同一过程中; 以及在所述第一电介质膜上形成第二电介质膜和在所述第一图案和所述第二图案转印到所述层叠半导体层的表面上。 因此,表面浮雕结构的中心位置可以高精度地与电流限制结构的中心位置对准。

    Surface-emitting laser and method for producing the same
    37.
    发明授权
    Surface-emitting laser and method for producing the same 有权
    表面发射激光器及其制造方法

    公开(公告)号:US07499481B2

    公开(公告)日:2009-03-03

    申请号:US11937772

    申请日:2007-11-09

    Inventor: Mitsuhiro Ikuta

    Abstract: A surface-emitting laser includes reflectors. One of the reflectors has multiple layers including one or more high-refractive-index layers and one or more low-refractive-index layers which are alternately stacked. At least one of the low-refractive-index layers includes a first region containing aluminum oxide and a second region surrounding the first region. A boundary between the first and second regions is positioned within a region where laser light is emitted. The reflectance of the multilayer reflector is higher in a portion including the first region than in a portion including the second region.

    Abstract translation: 表面发射激光器包括反射器。 一个反射器具有多个层,包括一个或多个高折射率层和一个或多个交替层叠的低折射率层。 低折射率层中的至少一个包括含有氧化铝的第一区域和围绕第一区域的第二区域。 第一和第二区域之间的边界位于发射激光的区域内。 在包括第一区域的部分中,多层反射器的反射率比包括第二区域的部分的反射率高。

    METHOD FOR MANUFACTURING SURFACE-EMITTING LASER
    38.
    发明申请
    METHOD FOR MANUFACTURING SURFACE-EMITTING LASER 有权
    制造表面发射激光的方法

    公开(公告)号:US20090035884A1

    公开(公告)日:2009-02-05

    申请号:US12166378

    申请日:2008-07-02

    Inventor: Mitsuhiro Ikuta

    Abstract: Provided is a method for manufacturing a surface-emitting laser capable of forming a photonic crystal structure inside a semiconductor highly accurately and easily without direct bonding. It is a method by laminating on a substrate a plurality of semiconductor layers including an active layer and a semiconductor layer having a photonic crystal structure formed therein, the method including the steps of forming a second semiconductor layer on a first semiconductor layer to form the photonic crystal structure, forming a plurality of microholes in the second semiconductor layer, forming a low refractive index portion in a part of the first semiconductor layer via the plurality of microholes thereby to provide the first semiconductor layer with the photonic crystal structure having a one-dimensional or two-dimensional refractive index distribution in a direction parallel to the substrate, and forming a third semiconductor layer by crystal regrowth from a surface of the second semiconductor layer.

    Abstract translation: 提供一种能够高精度,容易地形成半导体内的光子晶体结构的表面发射激光的制造方法,而无需直接接合。 这是通过在衬底上层叠多个半导体层的方法,所述多个半导体层包括有源层和在其中形成的光子晶体结构的半导体层,该方法包括以下步骤:在第一半导体层上形成第二半导体层以形成光子 晶体结构,在第二半导体层中形成多个微孔,经由多个微孔在第一半导体层的一部分中形成低折射率部分,从而为第一半导体层提供具有一维的光子晶体结构 或平行于基板的方向上的二维折射率分布,以及从第二半导体层的表面通过晶体再生长形成第三半导体层。

    Surface emitting laser
    40.
    发明授权
    Surface emitting laser 有权
    表面发射激光

    公开(公告)号:US09046807B2

    公开(公告)日:2015-06-02

    申请号:US13311310

    申请日:2011-12-05

    Inventor: Mitsuhiro Ikuta

    CPC classification number: G03G15/04072 H01S5/18313 H01S5/18391 H01S2301/18

    Abstract: A surface emitting laser includes a stepped structure including portions having different thicknesses. The optical path length from a plane defined above the stepped structure and extending parallel to a base substrate to an interface between a front mirror and the stepped structure is set to a specific value in each of the portions of the stepped structure.

    Abstract translation: 表面发射激光器包括具有不同厚度的部分的阶梯式结构。 从阶梯状结构上方平面的平面延伸到前反射镜与阶梯状结构之间的界面的光路长度被设定为阶梯状结构的各部分中的特定值。

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