公开(公告)号：US07535440B2

公开(公告)日：2009-05-19

申请号：US10406598

申请日：2003-04-04

申请人： Takeshi Nishi ,  Noriko Shibata

发明人： Takeshi Nishi ,  Noriko Shibata

IPC分类号： G09G3/30

CPC分类号： H01L27/3209 ,  H01L27/3244 ,  H01L27/3281 ,  H01L27/3295 ,  H01L2251/5315 ,  H01L2251/564

摘要： A light emitting element, in which voltages having different polarities are applied alternately in order to prevent the accumulation of electric charge in an organic compound layer of the light emitting element, and in which light is always emitted, no matter whether a positive polarity voltage or a negative polarity voltage is applied, is provided. An opposing electrode is formed between a first electrode and a second electrode, and a first light emitting element having a compound layer that contains a first organic substance between the first electrode and the opposing electrode, and a second light emitting element having a compound layer that contains a second organic substance between the opposing electrode and the second electrode, are formed in the present invention. Note that a constant voltage (reference voltage) is imparted to the opposing electrode, and that voltages having inverse polarities are applied simultaneously, and alternately for fixed periods of time, to the first electrode and the second electrode. A light emitting element that always emits light, even if the polarity of the applied voltage changes, can thus be formed.

摘要翻译： 交替地施加具有不同极性的电压的发光元件，以防止发光元件的有机化合物层中的电荷的累积，并且总是发出光，无论是正极性电压还是 提供负极性电压。 在第一电极和第二电极之间形成相对电极，以及第一发光元件，其具有在第一电极和对置电极之间包含第一有机物质的化合物层，以及具有化合物层的第二发光元件， 在本发明中形成在相对电极和第二电极之间的第二有机物质。 注意，向相对电极施加恒定电压（参考电压），并且对于第一电极和第二电极同时施加具有反极性的电压，并且交替地施加固定的时间。 因此，即使施加的电压的极性发生变化，总是发光的发光元件也可以形成。

公开(公告)号：US20090091014A1

公开(公告)日：2009-04-09

申请号：US12249523

申请日：2008-10-10

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Yasuyuki Arai ,  Noriko Shibata

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Yasuyuki Arai ,  Noriko Shibata

IPC分类号： G09G3/36

CPC分类号： H01L27/1266 ,  H01L21/6835 ,  H01L27/1214 ,  H01L2221/68368 ,  H01L2224/05172 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/07811 ,  H01L2924/00 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05184

摘要： To provide a thin film device which becomes possible to be formed in the portion which has been considered impossible to be provided with such device by the conventional technique, and to provide a semiconductor device which occupies small space and which has high shock resistance and flexibility, a device formation layer with a thickness of at most 50 μm which was peeled from a substrate by a transfer technique is transferred to another substrate, hence, a thin film device can be formed over various substrates. For instance, a semiconductor device can be formed so as to occupy small space by pasting a thin film device which is transferred to a flexible substrate onto a rear surface of a substrate of a panel, by pasting directly a thin film device onto a rear surface of a substrate of a panel, or by transferring a thin film device to an FPC which is pasted onto a substrate of a panel.

摘要翻译： 为了提供可以在通过常规技术被认为不可能设置这种器件的部分中形成的薄膜器件，并且提供占据小空间并且具有高抗冲击性和柔性的半导体器件， 通过转印技术将从基板剥离的厚度最多为50μm的元件形成层转移到另一基板，因此可以在各种基板上形成薄膜器件。 例如，可以通过将薄膜器件直接粘贴到背面上来形成半导体器件，以便占据较小的空间，该薄膜器件被传送到柔性衬底到面板的衬底的背面上 或者通过将薄膜器件转移到贴在面板的基板上的FPC上。

公开(公告)号：US07453101B2

公开(公告)日：2008-11-18

申请号：US11028536

申请日：2005-01-05

申请人： Osamu Nakamura ,  Hideaki Kuwabara ,  Noriko Shibata

发明人： Osamu Nakamura ,  Hideaki Kuwabara ,  Noriko Shibata

IPC分类号： H01L21/04

CPC分类号： G02F1/136286 ,  H01L21/76838 ,  H01L21/76895 ,  H01L27/124 ,  H01L29/78621

摘要： In the manufacture of a semiconductor device, there are provided a method that enables reduction in the number of manufacturing steps thereof and a structure for realizing the method, to thereby realize improvement in yield and reduction in manufacturing cost. Wirings (source wiring, drain wiring, and the like), which are respectively formed in a row direction and a column direction on an element substrate, are formed of the same conductive film. In this case, one of the respective wirings in the row direction and the column direction is discontinuously formed at a portion where the wirings intersect with each other, and an insulating film is formed on the wirings. Thereafter, a connection wiring for connecting discontinuous wirings is formed of the same film as that for forming an electrode provided on the insulating film. As a result, a continuous wiring is formed.

摘要翻译： 在半导体装置的制造中，提供了能够减少其制造步骤数量的方法和实现该方法的结构，从而实现产量的提高和制造成本的降低。 在元件基板上分别沿行方向和列方向形成的布线（源极配线，漏极配线等）由相同的导电膜形成。 在这种情况下，在布线方向和列方向上的各个布线中的一个在布线彼此交叉的部分处不连续地形成，并且在布线上形成绝缘膜。 此后，用于连接不连续布线的连接布线由与形成在绝缘膜上的电极形成相同的膜形成。 结果，形成连续布线。

公开(公告)号：US07436050B2

公开(公告)日：2008-10-14

申请号：US10760723

申请日：2004-01-21

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Yasuyuki Arai ,  Noriko Shibata

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Yasuyuki Arai ,  Noriko Shibata

IPC分类号： G09G3/36

CPC分类号： H01L27/1266 ,  H01L21/6835 ,  H01L27/1214 ,  H01L2221/68368 ,  H01L2224/05172 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/07811 ,  H01L2924/00 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05184

摘要： To provide a thin film device which becomes possible to be formed in the portion which has been considered impossible to be provided with such device by the conventional technique, and to provide a semiconductor device which occupies small space and which has high shock resistance and flexibility, a device formation layer with a thickness of at most 50 μm which was peeled from a substrate by a transfer technique is transferred to another substrate, hence, a thin film device can be formed over various substrates. For instance, a semiconductor device can be formed so as to occupy small space by pasting a thin film device which is transferred to a flexible substrate onto a rear surface of a substrate of a panel, by pasting directly a thin film device onto a rear surface of a substrate of a panel, or by transferring a thin film device to an FPC which is pasted onto a substrate of a panel.

摘要翻译： 为了提供可以在通过常规技术被认为不可能设置这种器件的部分中形成的薄膜器件，并且提供占据小空间并且具有高抗冲击性和柔性的半导体器件， 通过转印技术将从基板剥离的厚度最多为50μm的元件形成层转移到另一基板，因此可以在各种基板上形成薄膜器件。 例如，可以通过将薄膜器件直接粘贴到背面上来形成半导体器件，以便占据较小的空间，该薄膜器件被传送到柔性衬底到面板的衬底的背面上 或者通过将薄膜器件转移到贴在面板的基板上的FPC上。

公开(公告)号：US20070109735A1

公开(公告)日：2007-05-17

申请号：US11619035

申请日：2007-01-02

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Yasuyuki Arai ,  Noriko Shibata

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Yasuyuki Arai ,  Noriko Shibata

IPC分类号： H05K5/00

CPC分类号： H01L51/0024 ,  G02F1/13306 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/13452 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2001/13456 ,  G02F2202/28 ,  H01L21/2007 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/67236 ,  H01L21/6835 ,  H01L21/76251 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1266 ,  H01L27/1274 ,  H01L27/15 ,  H01L27/3248 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/78675 ,  H01L51/003 ,  H01L51/5012 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5096 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05025 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2225/06524 ,  H01L2225/06548 ,  H01L2225/06555 ,  H01L2225/06586 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/308 ,  H01L2251/5323 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01055 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/12044 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

摘要： The present invention intends to realize a narrow frame of a system on panel. In addition to this, a system mounted on a panel is intended to make higher and more versatile in the functionality. In the invention, on a panel on which a pixel portion (including a liquid crystal element, a light-emitting element) and a driving circuit are formed, integrated circuits that have so far constituted an external circuit are laminated and formed. Specifically, of the pixel portion and the driving circuit on the panel, on a position that overlaps with the driving circuit, any one kind or a plurality of kinds of the integrated circuits is formed by laminating according to a transcription technique.

摘要翻译： 本发明旨在实现面板上系统的窄帧。 除此之外，安装在面板上的系统旨在使功能更高更通用。 在本发明中，在形成有像素部（包括液晶元件，发光元件）和驱动电路的面板上，层叠形成了构成外部电路的集成电路。 具体地，在面板上的像素部分和驱动电路中，在与驱动电路重叠的位置上，根据转录技术层叠形成任何一种或多种集成电路。

公开(公告)号：US07038836B2

公开(公告)日：2006-05-02

申请号：US10919335

申请日：2004-08-17

申请人： Shunpei Yamazaki ,  Noriko Shibata

发明人： Shunpei Yamazaki ,  Noriko Shibata

IPC分类号： G02F1/00 ,  H05B37/02 ,  B32B19/00

CPC分类号： H01L51/5259 ,  H01L27/3244 ,  H01L51/0005 ,  H01L51/0034 ,  H01L51/0035 ,  H01L51/0038 ,  H01L51/0042 ,  H01L51/005 ,  H01L51/0084 ,  H01L51/0087 ,  H01L51/5253 ,  H01L51/56 ,  Y10S428/917 ,  Y10T428/23

摘要： To provide a process of successively forming from an EL layer, a cathode, a barrier layer and a cover layer in the same multi-chamber. By using a same film deposition method to form the EL layer and the cover layer, as shown in FIG. 1A, the EL layer, the cathode, the barrier layer, and the cover layer can be formed in the same multi-chamber in succession. Thus, as shown in FIG. 1B, a sealed structure of an EL element can be formed.

摘要翻译： 提供在相同的多室中从EL层，阴极，阻挡层和覆盖层连续地形成的工艺。 通过使用相同的成膜方法形成EL层和覆盖层，如图1所示。 如图1A所示，EL层，阴极，阻挡层和覆盖层可以相继形成在相同的多腔室中。 因此，如图1所示。 参考图1B，可以形成EL元件的密封结构。

公开(公告)号：US20050196892A1

公开(公告)日：2005-09-08

申请号：US11061861

申请日：2005-02-22

申请人： Hirokazu Yamagata ,  Yoshimi Adachi ,  Noriko Shibata

发明人： Hirokazu Yamagata ,  Yoshimi Adachi ,  Noriko Shibata

IPC分类号： H01L51/52 ,  B05C11/00 ,  H01J1/62 ,  H01J63/04 ,  H01L21/00

CPC分类号： H01L51/0031 ,  H01L51/0032 ,  H01L51/52 ,  H01L51/5253 ,  H01L51/56 ,  H01L2251/568 ,  Y10T428/31504

摘要： A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.

公开(公告)号：US06909111B2

公开(公告)日：2005-06-21

申请号：US10021315

申请日：2001-12-19

申请人： Hirokazu Yamagata ,  Yoshimi Adachi ,  Noriko Shibata

发明人： Hirokazu Yamagata ,  Yoshimi Adachi ,  Noriko Shibata

IPC分类号： H01L51/52 ,  H01L31/20

CPC分类号： H01L51/0031 ,  H01L51/0032 ,  H01L51/52 ,  H01L51/5253 ,  H01L51/56 ,  H01L2251/568 ,  Y10T428/31504

摘要： A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.

摘要翻译： 提供了一种制造发光器件的方法，其中可以通过调查和修复发光元件的缺陷部分中的短路来执行令人满意的图像显示。 如果对具有缺陷部分的发光元件施加反向偏置电压，则向缺陷部分流过反向电流。 通过使用规定缺陷部位的位置的发射型显微镜来测量从逆向电流流出的光的发射，并且可以通过向缺陷部照射激光，将其转换成绝缘体来修复短路位置。

公开(公告)号：US20050116227A1

公开(公告)日：2005-06-02

申请号：US11028536

申请日：2005-01-05

申请人： Osamu Nakamura ,  Hideaki Kuwabara ,  Noriko Shibata

发明人： Osamu Nakamura ,  Hideaki Kuwabara ,  Noriko Shibata

IPC分类号： G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/768 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L51/50 ,  H01L29/10

CPC分类号： G02F1/136286 ,  H01L21/76838 ,  H01L21/76895 ,  H01L27/124 ,  H01L29/78621

摘要： In the manufacture of a semiconductor device, there are provided a method that enables reduction in the number of manufacturing steps thereof and a structure for realizing the method, to thereby realize improvement in yield and reduction in manufacturing cost. Wirings (source wiring, drain wiring, and the like), which are respectively formed in a row direction and a column direction on an element substrate, are formed of the same conductive film. In this case, one of the respective wirings in the row direction and the column direction is discontinuously formed at a portion where the wirings intersect with each other, and an insulating film is formed on the wirings. Thereafter, a connection wiring for connecting discontinuous wirings is formed of the same film as that for forming an electrode provided on the insulating film. As a result, a continuous wiring is formed.

摘要翻译： 在半导体装置的制造中，提供了能够减少其制造步骤数量的方法和实现该方法的结构，从而实现产量的提高和制造成本的降低。 在元件基板上分别沿行方向和列方向形成的布线（源极配线，漏极配线等）由相同的导电膜形成。 在这种情况下，在布线方向和列方向上的各个布线中的一个在布线彼此交叉的部分处不连续地形成，并且在布线上形成绝缘膜。 此后，用于连接不连续布线的连接布线由与形成在绝缘膜上的电极形成相同的膜形成。 结果，形成连续布线。

公开(公告)号：US06781746B2

公开(公告)日：2004-08-24

申请号：US09817675

申请日：2001-03-27

申请人： Shunpei Yamazaki ,  Noriko Shibata

发明人： Shunpei Yamazaki ,  Noriko Shibata

IPC分类号： G02F100

CPC分类号： H01L51/5259 ,  H01L27/3244 ,  H01L51/0005 ,  H01L51/0034 ,  H01L51/0035 ,  H01L51/0038 ,  H01L51/0042 ,  H01L51/005 ,  H01L51/0084 ,  H01L51/0087 ,  H01L51/5253 ,  H01L51/56 ,  Y10S428/917 ,  Y10T428/23

摘要： To provide a process of successively forming from an EL layer, a cathode, a barrier layer and a cover layer in the same multi-chamber. By using a same film deposition method to form the EL layer and the cover layer, as shown in FIG. 1A, the EL layer, the cathode, the barrier layer, and the cover layer can be formed in the same multi-chamber in succession. Thus, as shown in FIG. 1B, a sealed structure of an EL element can be formed.

摘要翻译： 提供在相同的多室中从EL层，阴极，阻挡层和覆盖层连续地形成的工艺。 通过使用相同的成膜方法形成EL层和覆盖层，如图1所示。 如图1A所示，EL层，阴极，势垒层和覆盖层可以连续形成在相同的多室中。 因此，如图1所示。 如图1B所示，可以形成EL元件的密封结构。