公开(公告)号：US20120098146A1

公开(公告)日：2012-04-26

申请号：US13276221

申请日：2011-10-18

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H01L29/02 ,  C23C16/04 ,  H01L21/56

CPC classification number: H01L23/3192 ,  C23C16/042 ,  C23C16/45551 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The configuration of one or more barrier layers for encapsulating a device is controlled by setting parameters of atomic layer deposition (ALD). A substrate formed with the device is placed on a susceptor and exposed to multiple cycles of source precursor gas and reactant precursor gas injected by reactors of a deposition device. By adjusting one or more of (i) the relative speed between the susceptor and the reactors, (ii) configuration of the reactors, and (iii) flow rates of the gases injected by the reactors, the configuration of the layers deposited on the device can be controlled. By controlling the configuration of the deposited layers, defects in the deposited layers can be prevented or reduced.

Abstract translation: 通过设置原子层沉积（ALD）的参数来控制用于封装器件的一个或多个阻挡层的构造。 用该装置形成的衬底放置在基座上并暴露于通过沉积装置的反应器注入的源前体气体和反应物前体气体的多个循环。 通过调整（i）基座和反应器之间的相对速度，（ii）反应器的构造和（iii）由反应器注入的气体的流速，沉积在装置上的层的配置的一个或多个 可以控制。 通过控制沉积层的结构，可以防止或减少沉积层中的缺陷。

公开(公告)号：US20110262650A1

公开(公告)日：2011-10-27

申请号：US13094637

申请日：2011-04-26

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/44 ,  B05C11/00 ,  H05B3/03 ,  B05D1/00 ,  B05D1/32 ,  B05C5/00 ,  B05B1/00

CPC classification number: C23C16/4486 ,  B05B5/001 ,  B05B5/043 ,  C23C16/45551

Abstract: A vaporizing apparatus includes a chamber, a nozzle for dispersing a liquid into droplets, an electrode electrically isolated from the nozzle, and a heater for generating a vapor by applying heat to the droplets. The voltage source applies charges to the droplets by applying a voltage between the nozzle and the electrode. The vaporizing apparatus may be used to devices that deposit organic or inorganic thin films by chemical vapor deposition and/or atomic layer deposition processes, devices for supplying precursor materials that are deposited to form a thin film in organic light emitting diodes, devices that supply organic or inorganic precursor materials for encapsulation, and devices for supplying organic or inorganic polymer.

Abstract translation: 蒸发装置包括室，用于将液体分散到液滴中的喷嘴，与喷嘴电隔离的电极，以及通过向液滴施加热而产生蒸气的加热器。 电压源通过在喷嘴和电极之间施加电压来向液滴施加电荷。 蒸发装置可用于通过化学气相沉积和/或原子层沉积工艺沉积有机或无机薄膜的装置，用于供应在有机发光二极管中沉积以形成薄膜的前体材料的装置，供应有机 或用于封装的无机前体材料，以及用于供应有机或无机聚合物的装置。

公开(公告)号：US20100181566A1

公开(公告)日：2010-07-22

申请号：US12689927

申请日：2010-01-19

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H01L29/22 ,  H01L29/861 ,  H01L21/36 ,  H01L31/18 ,  H01L31/0296

CPC classification number: H01L21/02554 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/075 ,  H01L31/078 ,  H01L31/1884 ,  Y02E10/50

Abstract: An electrode structure comprises a semiconductor junction comprising an n-type semiconductor layer and a p-type semiconductor layer; a hole exnihilation layer on the p-type semiconductor layer; and a transparent electrode layer on the hole exnihilation layer. The electrode structure further comprises a conductive layer between the hole exnihilation layer and the transparent electrode layer. In the electrode structure, one or more of the hole exnihilation layer, the conductive layer and the transparent electrode layer may be formed by an atomic layer deposition. In the electrode structure, a transparent electrode formed of a degenerated n-type oxide semiconductor does not come in direct contact with a p-type semiconductor, and thus, annihilation or recombination of holes generated in the p-type semiconductor can be reduced, which increases the carrier generation efficiency. Further, the electric conductivity of the transparent electrode is increased by the conductive layer, which improves electrical characteristics of a device.

Abstract translation: 电极结构包括包含n型半导体层和p型半导体层的半导体结; p型半导体层上的空穴除外层; 以及在透孔层上的透明电极层。 所述电极结构还包括在所述孔除硅层和所述透明电极层之间的导电层。 在电极结构中，可以通过原子层沉积形成空穴除外层，导电层和透明电极层中的一个或多个。 在电极结构中，由退化的n型氧化物半导体形成的透明电极不与p型半导体直接接触，因此可以减少在p型半导体中产生的空穴的湮灭或复合，其中 提高载波生成效率。 此外，通过导电层增加透明电极的导电性，这改善了器件的电特性。

公开(公告)号：US20100120364A1

公开(公告)日：2010-05-13

申请号：US12506387

申请日：2009-07-21

Applicant: Yong-Ho LEE ,  Sang-In LEE ,  Eun-Chul KIM ,  Kyoung-Han LEE

Inventor： Yong-Ho LEE ,  Sang-In LEE ,  Eun-Chul KIM ,  Kyoung-Han LEE

IPC: H04B7/00

CPC classification number: H04W8/005 ,  H04W84/18

Abstract: An apparatus and method for obtaining information on Bluetooth devices in a computing device using Bluetooth are provided. The method includes, if an Inquiry Response (IR) packet is received as a response to an inquiry packet, obtaining information on a first Bluetooth device transmitting the IR packet and determining whether a supplementary response indication field is enabled and, if the supplementary response indication field is enabled, receiving an Extended Inquiry Response (EIR) packet, and obtaining information on at least one Bluetooth device other than the first Bluetooth device through the EIR packet.

Abstract translation: 提供了一种使用蓝牙在计算设备中获取关于蓝牙设备的信息的设备和方法。 该方法包括如果接收到询问响应（IR）分组作为对查询分组的响应，则获取关于发送IR分组的第一蓝牙设备的信息，并确定辅助应答指示字段是否被启用，以及如果辅助响应指示 字段被启用，接收扩展查询响应（EIR）分组，以及通过EIR分组获得除了第一蓝牙设备之外的至少一个蓝牙设备的信息。

公开(公告)号：US20100064971A1

公开(公告)日：2010-03-18

申请号：US12560705

申请日：2009-09-16

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/54

CPC classification number: C23C16/45578 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32541

Abstract: A plasma generator may include a first electrode extending in one direction, and a second electrode spaced apart from the first electrode. Facing surfaces of the first electrode and the second electrode may have spiral shapes along the one direction. A cross-section of the first electrode and a cross-section of the second electrode, which are perpendicular to the one direction, may have at least partially concentric shapes. An electrode for generating plasma may include a platform extending in one direction, and at least one protruding thread spirally formed on a surface of the platform along the one direction.

Abstract translation: 等离子体发生器可以包括沿一个方向延伸的第一电极和与第一电极间隔开的第二电极。 第一电极和第二电极的面对表面可沿着该一个方向具有螺旋形状。 第一电极的横截面和垂直于一个方向的第二电极的横截面可以具有至少部分同心的形状。 用于产生等离子体的电极可以包括沿着一个方向延伸的平台，以及至少一个突出的螺纹螺旋地沿着该一个方向形成在平台的表面上。

公开(公告)号：US20100037820A1

公开(公告)日：2010-02-18

申请号：US12539490

申请日：2009-08-11

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/455

CPC classification number: C23C16/45551

Abstract: A vapor deposition reactor includes a reaction module includes a first injection unit for injecting a first material onto a substrate. At least one second injection unit is placed within the first injection unit for injecting a second material onto the substrate. The substrate passes the reaction module through a relative motion between the substrate and the reaction module. The vapor deposition reactor advantageously injects a plurality of materials onto the substrate while the substrate passes the reaction module without exposing the substrate to the atmosphere in a chamber.

Abstract translation: 气相沉积反应器包括反应模块，其包括用于将第一材料注入到基底上的第一注射单元。 至少一个第二注射单元被放置在第一注射单元内，用于将第二材料注射到基底上。 基板通过反应模块通过基板和反应模块之间的相对运动。 气相沉积反应器有利地将多种材料注入到衬底上，同时衬底通过反应模块而不将衬底暴露在腔室中的大气中。

公开(公告)号：US07304253B2

公开(公告)日：2007-12-04

申请号：US10983590

申请日：2004-11-09

Applicant: Sang-in Lee

Inventor： Sang-in Lee

IPC: H01H3/00

CPC classification number: H01H25/041

Abstract: A switching device of an image recording and replaying apparatus, having: a frame with a button sheet having a guide boss opening positioned in a center of the button sheet and operation boss openings positioned around the guide boss opening, pairs of the operation boss openings being oppositely disposed with respect to the guide boss opening; a switchboard placed on a first side of the frame and having tact switches facing respective operation boss openings; an integrated button disposed to be elastically biased toward a second side of the frame opposite the first side, and having a guide boss inserted into the guide boss opening and operation bosses inserted into respective operation boss openings; and a fixation holder disposed on the guide boss to fix the integrated button to the frame, such that the operation bosses continuously contact with corresponding tact switches.

Abstract translation: 一种图像记录和重放装置的切换装置，具有：具有按钮片的框架，其具有位于按钮片的中心的引导凸起开口和位于引导凸起开口周围的操作凸起开口，成对的操作凸起开口为 相对于导向凸起开口相对设置; 布置在所述框架的第一侧上并且具有面向相应的操作凸起开口的触觉开关的开关板; 集成按钮，被设置为朝向与第一侧相对的框架的第二侧弹性偏置，并且具有插入到引导凸台开口中的引导凸起和插入到相应的操作凸起开口中的操作凸起; 以及设置在所述引导凸台上以将所述集成按钮固定到所述框架的固定架，使得所述操作凸台与相应的轻触开关持续接触。

公开(公告)号：US20060258078A1

公开(公告)日：2006-11-16

申请号：US10524814

申请日：2003-08-18

Applicant: Sang-In Lee ,  Yoshihide Senzaki ,  Sang-Kyoo Lee

Inventor： Sang-In Lee ,  Yoshihide Senzaki ,  Sang-Kyoo Lee

IPC: H01L21/8238

CPC classification number: H01L21/0228 ,  C23C16/405 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02205 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31641 ,  H01L21/31645 ,  H01L29/517

Abstract: The present invention relates to the atomic layer deposition (“ALD”) of high k dielectric layers of metal oxides containing Group 4 metals, including hafnium oxide, zirconium oxide, and titanium oxide. More particularly, the present invention relates to the ALD formation of Group 4 metal oxide films using an metal alkyl amide as a metal organic precursor and ozone as a co-reactant.

Abstract translation: 本发明涉及包含氧化铪，氧化锆和氧化钛的含有第4族金属的金属氧化物的高k电介质层的原子层沉积（“ALD”）。 更具体地，本发明涉及使用金属烷基酰胺作为金属有机前体和臭氧作为共反应物的第4族金属氧化物膜的ALD形成。

公开(公告)号：US06376355B1

公开(公告)日：2002-04-23

申请号：US09136798

申请日：1998-08-19

Applicant: Mee-young Yoon ,  Sang-in Lee

Inventor： Mee-young Yoon ,  Sang-in Lee

IPC: H01L214763

CPC classification number: H01L21/76856 ,  H01L21/76829 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76879

Abstract: A method for forming a metal interconnection filing a contact hole or a groove having a high aspect ratio. An interdielectric layer pattern having a recessed region corresponding to the contact hole or the groove is formed on a semiconductor substrate, and a barrier metal layer is formed on the entire surface of the resultant structure where the interdielectric layer pattern is formed. An anti-nucleation layer is selectively formed only on the non-recessed region of the barrier metal layer, thereby exposing the barrier metal layer formed on the sidewalls and the bottom of the recessed region. Subsequently, a metal plug is selectively formed in the recessed region, surrounded by the barrier metal layer, thereby forming a metal interconnection for completely filling the contact hole or the groove having a high aspect ratio. A metal liner may be formed instead of the metal plug, followed by forming a metal layer filling the region surrounded by the metal liner, thereby forming metal interconnection for completely filling the contact hole or groove having a high aspect ratio.

Abstract translation: 一种形成具有高纵横比的接触孔或凹槽的金属互连的方法。 在半导体衬底上形成具有与接触孔或凹槽相对应的凹入区域的电介质层图案，并且在形成介电层图案的所得结构的整个表面上形成阻挡金属层。 仅在阻挡金属层的非凹部区域选择性地形成防结晶层，从而露出形成在凹陷区域的侧壁和底部的阻挡金属层。 随后，在由阻挡金属层包围的凹陷区域中选择性地形成金属插塞，从而形成用于完全填充接触孔或具有高纵横比的沟槽的金属互连。 可以形成金属衬垫代替金属插塞，随后形成填充由金属衬垫包围的区域的金属层，从而形成用于完全填充具有高纵横比的接触孔或槽的金属互连。

公开(公告)号：US06211082B1

公开(公告)日：2001-04-03

申请号：US09021462

申请日：1998-02-10

Applicant: Bong-young Yoo ,  Byung-Lyul Park ,  Dae-hong Ko ,  Sang-in Lee

Inventor： Bong-young Yoo ,  Byung-Lyul Park ,  Dae-hong Ko ,  Sang-in Lee

IPC: H01L2144

CPC classification number: C23C16/08 ,  H01L21/28568

Abstract: A tungsten or other metal layer is chemical vapor deposited using a source gas containing tungsten, a reducing gas and a nitrogen-containing gas. The nitrogen-containing gas can act as a surface roughness reducing gas that reduces the roughness of the tungsten layer compared to a tungsten layer that is chemical vapor deposited using the source gas containing tungsten and the reducing gas, but without using the surface roughness reducing gas. Viewed in another way, the nitrogen-containing gas acts as a growth rate controlling gas that produces uniform growth of the tungsten layer in a plurality of directions compared to a tungsten layer that is deposited using the source gas containing tungsten and the reducing gas, but without using the growth rate controlling gas.

Abstract translation: 使用含有钨，还原气体和含氮气体的源气体化学气相沉积钨或其它金属层。 与使用含有钨和还原气体的源气体进行化学气相沉积的钨层相比，含氮气体可以用作表面粗糙度降低气体，其降低钨层的粗糙度，但不使用表面粗糙度还原气体 。 以另一种方式看，与使用含钨和还原气体的源气体沉积的钨层相比，含氮气体充当生长速率控制气体，其产生钨层在多个方向上的均匀生长，但是 而不用生长速率控制气体。