Method of making an on-die decoupling capacitor for a semiconductor device
    32.
    发明授权
    Method of making an on-die decoupling capacitor for a semiconductor device 有权
    制造用于半导体器件的裸片去耦电容器的方法

    公开(公告)号:US06664168B1

    公开(公告)日:2003-12-16

    申请号:US10202807

    申请日:2002-07-24

    CPC classification number: H01L28/55

    Abstract: A method of making an on-die decoupling capacitor for a semiconductor device is described. That method comprises forming a first barrier layer on a conductive layer. The upper surface of the first barrier layer is modified to enable a dielectric layer with an acceptable nucleation density to be formed on the first barrier layer. A dielectric layer is formed on the first barrier layer, and a second barrier layer is formed on the dielectric layer.

    Abstract translation: 描述了制造用于半导体器件的芯片上去耦电容器的方法。 该方法包括在导电层上形成第一阻挡层。 修改第一阻挡层的上表面以使得能够在第一阻挡层上形成具有可接受的成核密度的介电层。 在第一阻挡层上形成电介质层,在电介质层上形成第二阻挡层。

    ENHANCED ON-CHIP DECOUPLING CAPACITORS AND METHOD OF MAKING SAME
    39.
    发明申请
    ENHANCED ON-CHIP DECOUPLING CAPACITORS AND METHOD OF MAKING SAME 有权
    增强片上解压电容器及其制造方法

    公开(公告)号:US20080296731A1

    公开(公告)日:2008-12-04

    申请号:US12190550

    申请日:2008-08-12

    CPC classification number: H01L28/87 H01L27/0805

    Abstract: An apparatus including a capacitor formed between metallization layers on a circuit, the capacitor including a bottom electrode coupled to a metal layer and a top electrode coupled to a metal via wherein the capacitor has a corrugated sidewall profile. A method including forming an interlayer dielectric including alternating layers of dissimilar dielectric materials in a multilayer stack over a metal layer of a device structure; forming a via having a corrugated sidewall; and forming a decoupling capacitor stack in the via that conforms to the sidewall of the via.

    Abstract translation: 一种包括在电路上的金属化层之间形成的电容器的装置,所述电容器包括耦合到金属层的底部电极和耦合到金属通孔的顶部电极,其中所述电容器具有波纹侧壁轮廓。 一种方法,包括在器件结构的金属层上的多层堆叠中形成包含不同介电材料的交替层的层间电介质; 形成具有波形侧壁的通孔; 以及在通孔中形成去耦电容器叠层,其符合通孔的侧壁。

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