公开(公告)号：US20130122712A1

公开(公告)日：2013-05-16

申请号：US13656578

申请日：2012-10-19

Applicant: Jong Mun KIM ,  Kenny Linh Doan ,  Li Ling ,  Jairaj Payyapilly ,  Daisuke Shimuzu ,  Srinivas D. Nemani ,  Thorsten B. Lill

Inventor： Jong Mun KIM ,  Kenny Linh Doan ,  Li Ling ,  Jairaj Payyapilly ,  Daisuke Shimuzu ,  Srinivas D. Nemani ,  Thorsten B. Lill

IPC: H01L21/3065

CPC classification number: H01L21/31116

Abstract: Methods of etching HAR features in a dielectric layer are described. In one embodiment, a substrate is provided into an etch chamber. The substrate has a patterned mask disposed on a dielectric layer formed thereon where the patterned mask has openings. A gas mixture is provided into the etch chamber, the gas mixture includes CO, O2, a fluorocarbon gas, and an optional inert gas. A plasma is formed from the gas mixture. Features are etched in the dielectric layer through the openings in the presence of the plasma

Abstract translation: 描述了蚀刻介电层中的HAR特征的方法。 在一个实施例中，将衬底提供到蚀刻室中。 衬底具有设置在其上形成的电介质层上的图案化掩模，其中图案化掩模具有开口。 气体混合物被提供到蚀刻室中，气体混合物包括CO，O 2，碳氟化合物气体和任选的惰性气体。 从气体混合物形成等离子体。 在存在等离子体的情况下，通过开口在电介质层中蚀刻特征

公开(公告)号：US08314033B2

公开(公告)日：2012-11-20

申请号：US13070913

申请日：2011-03-24

Applicant: Yifeng Zhou ,  Srinivas D. Nemani ,  Khoi Doan ,  Jeremiah T. P. Pender

Inventor： Yifeng Zhou ,  Srinivas D. Nemani ,  Khoi Doan ,  Jeremiah T. P. Pender

IPC: H01L21/302

CPC classification number: H01L21/31138 ,  H01L21/3105 ,  H01L21/76814 ,  H01L2221/1063

Abstract: A significantly improved low-k dielectric patterning method is described herein using plasma comprising an oxygen radical source and a silicon source to remove the photo-resist layer.

Abstract translation: 本文描述了使用包含氧自由基源和硅源的等离子体去除光致抗蚀剂层的显着改进的低k电介质图案化方法。

公开(公告)号：US07943531B2

公开(公告)日：2011-05-17

申请号：US11876664

申请日：2007-10-22

Applicant: Srinivas D. Nemani ,  Abhijit Basu Mallick ,  Ellie Y. Yieh

Inventor： Srinivas D. Nemani ,  Abhijit Basu Mallick ,  Ellie Y. Yieh

IPC: H01L21/469

CPC classification number: H01L21/31612 ,  C23C16/045 ,  C23C16/401 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/3122 ,  H01L21/31633

Abstract: A method of depositing a silicon oxide layer over a substrate includes providing a substrate to a deposition chamber. A first silicon-containing precursor, a second silicon-containing precursor and a NH3 plasma are reacted to form a silicon oxide layer. The first silicon-containing precursor includes at least one of Si—H bond and Si—Si bond. The second silicon-containing precursor includes at least one Si—N bond. The deposited silicon oxide layer is annealed.

Abstract translation: 在衬底上沉积氧化硅层的方法包括向沉积室提供衬底。 第一含硅前体，第二含硅前体和NH 3等离子体反应形成氧化硅层。 第一含硅前体包括Si-H键和Si-Si键中的至少一种。 第二含硅前体包括至少一个Si-N键。 沉积的氧化硅层退火。

公开(公告)号：US07825044B2

公开(公告)日：2010-11-02

申请号：US12817840

申请日：2010-06-17

Applicant: Abhijit Basu Mallick ,  Srinivas D. Nemani ,  Timothy W. Weidman

Inventor： Abhijit Basu Mallick ,  Srinivas D. Nemani ,  Timothy W. Weidman

IPC: H01L21/31 ,  H01L21/489

CPC classification number: H01L21/31633 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02337 ,  H01L21/3105 ,  H01L21/31608

Abstract: Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer filling a portion of a trench on the substrate, the silicon oxide layer including carbon species as a byproduct of formation. The methods also include introducing an acidic vapor into the semiconductor processing chamber, the acidic vapor reacting with the silicon oxide layer to remove the carbon species from the silicon oxide layer. The methods may further include depositing additional silicon oxide over the cured silicon oxide to fill the trench. The methods may also include removing the acidic vapor from the semiconductor processing chamber.

Abstract translation: 提供了在基板上固化氧化硅层的方法。 所述方法可以包括提供半导体处理室和衬底并形成填充衬底上的沟槽的一部分的氧化硅层的过程，所述氧化硅层包括作为形成副产物的碳物质。 所述方法还包括将酸性蒸汽引入半导体处理室，酸性蒸气与氧化硅层反应以从氧化硅层除去碳物质。 所述方法还可以包括在固化的氧化硅上沉积额外的氧化硅以填充沟槽。 所述方法还可以包括从半导体处理室去除酸性蒸汽。

公开(公告)号：US20100081293A1

公开(公告)日：2010-04-01

申请号：US12243375

申请日：2008-10-01

Applicant: ABHIJIT BASU MALLICK ,  Srinivas D. Nemani

Inventor： ABHIJIT BASU MALLICK ,  Srinivas D. Nemani

IPC: H01L21/31

CPC classification number: H01L21/3148 ,  C23C16/325 ,  C23C16/347 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/3185

Abstract: A method for depositing a silicon nitride based dielectric layer is provided. The method includes introducing a silicon precursor and a radical nitrogen precursor to a deposition chamber. The silicon precursor has a N—Si—H bond, N—Si—Si bond and/or Si—Si—H bond. The radical nitrogen precursor is substantially free from included oxygen. The radical nitrogen precursor is generated outside the deposition chamber. The silicon precursor and the radical nitrogen precursor interact to form the silicon nitride based dielectric layer.

Abstract translation: 提供了一种沉积氮化硅基电介质层的方法。 该方法包括将硅前体和自由基氮前体引入沉积室。 硅前体具有N-Si-H键，N-Si-Si键和/或Si-Si-H键。 自由基氮前体基本上不含有氧。 在沉积室外产生自由基氮前体。 硅前体和自由基氮前体相互作用以形成基于氮化硅的介电层。

公开(公告)号：US07422774B2

公开(公告)日：2008-09-09

申请号：US11076181

申请日：2005-03-09

Applicant: Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia ,  Eric Hollar ,  Kang Sub Yim

Inventor： Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia ,  Eric Hollar ,  Kang Sub Yim

IPC: B05D3/06 ,  B05D5/12 ,  C23C16/56 ,  C23C16/40 ,  C23C16/42 ,  C23C16/48 ,  C23C16/50

CPC classification number: C23C16/401 ,  B05D1/60 ,  B05D3/068 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/7681

Abstract: The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compounds having at least one cyclic group to a substrate surface at deposition conditions sufficient to deposit a non-cured film comprising the at least one cyclic group on the substrate surface. The method further includes substantially removing the at least one cyclic group from the non-cured film using an electron beam at curing conditions sufficient to provide a dielectric constant less than 2.5 and a hardness greater than 0.5 GPa.

Abstract translation: 本发明通常提供使用电子束处理沉积低介电常数膜的方法。 在一个方面，该方法包括在足以沉积包含至少一个环状基团的非固化膜的沉积条件下将包含一种或多种有机硅化合物和一种或多种具有至少一个环状基团的烃化合物的气体混合物递送到基底表面 组在基板表面上。 该方法还包括在足以提供小于2.5的介电常数和大于0.5GPa的硬度的固化条件下使用电子束从非固化膜中基本上除去至少一个环状基团。

公开(公告)号：US07087536B2

公开(公告)日：2006-08-08

申请号：US10931742

申请日：2004-09-01

Applicant: Srinivas D. Nemani ,  Young S. Lee

Inventor： Srinivas D. Nemani ,  Young S. Lee

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/02164 ,  C23C16/401 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/0234

Abstract: A silicon oxide film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A liquid Si—C—O—H precursor is vaporized. A flow of the vaporized liquid Si—C—O—H precursor is provided to the substrate processing chamber. A gaseous oxidizer is also flowed to the substrate processing chamber. A deposition plasma is generated inductively from the precursor and the oxidizer in the substrate processing chamber, and the silicon oxide film is deposited over the substrate and within the gap with the deposition plasma.

Abstract translation: 在设置在基板处理室中的基板上沉积氧化硅膜。 基板在相邻的凸起表面之间形成间隙。 液体Si-C-O-H前体蒸发。 蒸发的液体Si-C-O-H前体的流动被提供到基底处理室。 气态氧化剂也流到衬底处理室。 从衬底处理室中的前体和氧化剂感应地产生沉积等离子体，并且氧化硅膜沉积在衬底上并且与沉积等离子体在间隙内沉积。

公开(公告)号：US07001850B2

公开(公告)日：2006-02-21

申请号：US10894872

申请日：2004-07-20

Applicant: Srinivas D Nemani ,  Li-Qun Xia ,  Dian Sugiarto ,  Ellie Yieh ,  Ping Xu ,  Francimar Campana-Schmitt ,  Jia Lee

Inventor： Srinivas D Nemani ,  Li-Qun Xia ,  Dian Sugiarto ,  Ellie Yieh ,  Ping Xu ,  Francimar Campana-Schmitt ,  Jia Lee

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/76834 ,  C23C16/325 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/314 ,  H01L21/3148 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76829 ,  Y10S438/931

Abstract: A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.

Abstract translation: 提供了一种形成用于集成电路制造工艺中的碳化硅层的方法。 碳化硅层通过在电场存在下使包含硅源，碳源和掺杂剂的气体混合物反应而形成。 沉积的碳化硅层具有随后期形成期间作为气体混合物中存在的掺杂剂量的函数而变化的压缩性。

公开(公告)号：US06878620B2

公开(公告)日：2005-04-12

申请号：US10293543

申请日：2002-11-12

Applicant: Son Van Nguyen ,  Li-Qun Xia ,  Srinivas D. Nemani

Inventor： Son Van Nguyen ,  Li-Qun Xia ,  Srinivas D. Nemani

IPC: H01L21/768 ,  H01L21/4763

CPC classification number: H01L21/76844 ,  H01L21/76829 ,  H01L21/76831

Abstract: Methods and apparatus for protecting the dielectric layer sidewalls of openings, such as vias and trenches, in semiconductor substrates are provided. A pre-liner and a liner are deposited over the sidewalls of the openings as part of integrated processing sequences that either do not remove the photoresist until subsequent processing or remove the photoresist with a plasma etch that does not contaminate the sidewalls of the openings.

Abstract translation: 提供了用于保护半导体衬底中诸如通路和沟槽之类的开口的电介质层侧壁的方法和装置。 预先衬里和衬垫沉积在开口的侧壁上，作为集成处理顺序的一部分，其不会除去光致抗蚀剂，直到后续处理或用不污染开口侧壁的等离子体蚀刻去除光致抗蚀剂。

公开(公告)号：US06797643B2

公开(公告)日：2004-09-28

申请号：US10279367

申请日：2002-10-23

Applicant: Juan Carlos Rocha-Alvarez ,  Maosheng Zhao ,  Ying Yu ,  Shankar Venkataraman ,  Srinivas D. Nemani ,  Li-Qun Xia

Inventor： Juan Carlos Rocha-Alvarez ,  Maosheng Zhao ,  Ying Yu ,  Shankar Venkataraman ,  Srinivas D. Nemani ,  Li-Qun Xia

IPC: H01L2131

CPC classification number: H01L21/02126 ,  C23C16/401 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31633

Abstract: A method of depositing a low dielectric constant film on a substrate. In one embodiment, the method includes the steps of positioning the substrate in a deposition chamber, providing a gas mixture to the deposition chamber, in which the gas mixture is comprised of one or more cyclic organosilicon compounds, one or more aliphatic compounds and one or more oxidizing gases. The method further includes reacting the gas mixture in the presence of an electric field to form the low dielectric constant film on the semiconductor substrate. The electric field is generated using a very high frequency power having a frequency in a range of about 20 MHz to about 100 MHz.

Abstract translation: 在基板上沉积低介电常数膜的方法。 在一个实施例中，该方法包括以下步骤：将基板定位在沉积室中，为沉积室提供气体混合物，其中气体混合物由一种或多种环状有机硅化合物，一种或多种脂族化合物和一种或多种脂族化合物组成， 更多的氧化气体。 该方法还包括在存在电场的情况下使气体混合物反应以在半导体衬底上形成低介电常数膜。 使用频率在约20MHz至约100MHz范围内的非常高频率的功率产生电场。