摘要:
Disclosed herein is an apparatus for manufacturing a transparent conductive layer. The apparatus includes a transparent substrate, a longitudinal direction of which is arranged in an X axis direction. Jetting means jets a conductive polymer solution, containing ions, onto a first surface of the transparent substrate in a Y axis direction. A wire is spaced apart from a second surface of the transparent substrate by a predetermined distance and arranged in a Z axis direction. Voltage application means generates electric attractive force between the wire and the conductive polymer solution by applying a potential having polarity opposite to that of the ions to the wire. The apparatus adds ions to the conductive polymer solution, and employs a wire to which a potential having polarity opposite to that of the ions is applied, thus obtaining the advantage that the target substrate can be uniformly coated with the conductive polymer solution.
摘要:
The letter input method of the present invention comprises: a first step of enabling a letter input window including an end button to be displayed on a touch screen at a location separate from a word input window, when a user applies contact pressure to the word input window of the web browser or web site displayed on the touch screen; a second step of inputting relevant letters to the word input window, when the user inputs characters to the character input window; and a third step of generating a driving signal such that the search engine associated with the word input window can be driven by using the letters input to the word input window as search data, when the user selects the end button. The letter input method of the present invention enables users to input letters on the touch screen simply by touch instead of a separate keyboard or a mouse, enables the driving of a search engine of the web browser or a web site to be performed on the letter input screen, and enables the simple selection of a search engine to be used.
摘要:
Semiconductor structures including a first conductive layer; a dielectric layer on the first conductive layer; a second conductive layer on the dielectric layer; and a crystallized seed layer in at least one of a first portion between the first conductive layer and the dielectric layer and a second portion between the dielectric layer and the second conductive layer. Related capacitors and methods are also provided herein.
摘要:
In a method of forming a layer, a precursor including a metal and a ligand chelating to the metal is stabilized by contacting the precursor with an electron donating compound to provide a stabilized precursor onto a substrate. A reactant is introduced onto the substrate to bind to the metal in the stabilized precursor. The precursor stabilized by the electron donating compound has an improved thermal stability and thus the precursor is not dissociated at a high temperature atmosphere, and the layer having a uniform thickness is formed on the substrate.
摘要:
A method for manufacturing a functional mulching film for rice direct seeding, and a mulching film manufactured>by the same method. The mulching film is installed in a paddy field and formed to suppress weed growth and contains a fertilizer for enhancing rice growth and a powder ore for reinforcing the fertility of the soil.
摘要:
Disclosed is a tray handling apparatus in which the conveyance and inversion of a tray can be performed simultaneously to thereby achieve a rapid inspecting operation and a simplified apparatus configuration, and a semiconductor device inspecting method using the tray handling apparatus. The tray handling apparatus includes an inverting unit to turn the tray, in which objects are received, upside down, and a transfer device to convey the object receiving tray from one conveyor to another conveyor while being reciprocally moved above a body of the apparatus. The inverting unit is integrally provided at a lower end of the transfer device, to allow the conveyance and inversion of the tray to be performed simultaneously.
摘要:
A method of forming an oxide layer. The method includes: forming a layer of reaction-inhibiting functional groups on a surface of a substrate; forming a layer of precursors of a metal or a semiconductor on the layer of the reaction-inhibiting functional groups; and oxidizing the precursors of the metal or the semiconductor in order to obtain a layer of a metal oxide or a semiconductor oxide. According to the method, an oxide layer having a high thickness uniformity may be formed and a semiconductor device having excellent electrical characteristics may be manufactured.
摘要:
A method of forming a metal thin film can reduce leakage current while improving electric properties by improving step coverage of a device. The method of forming a metal thin film includes supplying a metal precursor including chlorine, purging byproducts produced after the supplying of the metal precursor by injecting a purge gas, supplying a reactant to allow the reactant and the metal precursor to react with each other to form a thin film layer, and purging the byproducts produced after the reaction by injecting a purge gas, wherein before the supplying of the metal precursor, the method further includes supplying a reactant to be adsorbed on a treated product.
摘要:
Disclosed herein is a method of manufacturing a sensing electrode of a touch panel according to a preferred embodiment of the present invention including: forming a non-conductive mesh skeleton on a transparent substrate using an electrospinning solution by an electrospinning method; and forming an electrode layer on the non-conductive mesh skeleton by performing electroless plating processing. The preferred embodiments of the present invention can implement uniform conductivity for all the electrode layers by preventing irregular conductivity between the mesh skeletons by forming a non-conductive mesh skeleton using the electrospinning method and then, forming the electrode layers using the electroless plating.
摘要:
Provided are methods of removing water adsorbed or bonded to a surface of a semiconductor substrate, and methods of depositing an atomic layer using the method of removing water described herein. The method of removing water includes applying a chemical solvent to the surface of a semiconductor substrate, and removing the chemical solvent from the surface of the semiconductor substrate.