公开(公告)号：US20170250078A1

公开(公告)日：2017-08-31

申请号：US15055164

申请日：2016-02-26

Applicant: Applied Materials, Inc.

Inventor： Xinyu BAO ,  Errol Antonio C. SANCHEZ ,  Zhiyuan YE ,  Keun-Yong BAN

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02658 ,  H01L21/02538 ,  H01L21/67098 ,  H01L21/67115 ,  H01L21/67196 ,  H01L21/67207

Abstract: Embodiments described herein generally relate to a substrate processing system, such as an etch processing system. In one embodiment, a method of processing a substrate is disclosed herein. The method includes removing a native oxide from a surface of the substrate, baking the substrate in a pre-treatment thermal chamber such that double atomic steps are formed on the surface of the substrate, and forming an epitaxial layer on the substrate after the substrate is baked.

公开(公告)号：US20170162379A1

公开(公告)日：2017-06-08

申请号：US15340292

申请日：2016-11-01

Applicant: Applied Materials, Inc.

Inventor： Chun YAN ,  Xinyu BAO

IPC: H01L21/02 ,  H01L21/67 ,  B08B5/00 ,  H01L21/306

CPC classification number: H01L21/02065 ,  B08B5/00 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/30621 ,  H01L21/67023

Abstract: Embodiments described herein generally relate to improved methods and solutions for cleaning a substrate prior to epitaxial growth of Group III-V channel materials. A first processing gas, which includes a noble gas and a hydrogen source, is used to remove the native oxide layer from the substrate surface. A second processing gas, Ar/Cl2/H2, is then used to create a reactive surface layer on the substrate surface. Finally, a hydrogen bake with a third processing gas, which includes a hydrogen source and an arsine source, is used to remove the reactive layer from the substrate surface.

公开(公告)号：US20140357057A1

公开(公告)日：2014-12-04

申请号：US14287927

申请日：2014-05-27

Applicant: Applied Materials, Inc.

Inventor： Xinyu BAO ,  Errol Antonio C. SANCHEZ

IPC: H01L21/02

CPC classification number: H01L21/02463 ,  H01L21/02381 ,  H01L21/02502 ,  H01L21/02546 ,  H01L21/0262 ,  H01L29/15 ,  H01L29/7783

Abstract: Embodiments described herein relate to a structure for III-V devices on silicon. A Group IV substrate is provided and a III-V structure may be formed thereon. The III-V structure generally comprises one or more buffer layers and a channel layer disposed on the one or more buffer layers. The one or more buffer layers may be selected to provide optimal microelectronic device properties, such as minimal defects, reduced charge accumulation, and reduced current leakage.

Abstract translation: 本文描述的实施例涉及硅上III-V器件的结构。 提供IV族基板，并且可以在其上形成III-V结构。 III-V结构通常包括一个或多个缓冲层和设置在一个或多个缓冲层上的沟道层。 可以选择一个或多个缓冲层以提供最佳的微电子器件性质，例如最小的缺陷，减少的电荷累积和减少的电流泄漏。

公开(公告)号：US20190172728A1

公开(公告)日：2019-06-06

申请号：US16172266

申请日：2018-10-26

Applicant: Applied Materials, Inc.

Inventor： Xinyu BAO ,  Chun YAN ,  Hua CHUNG ,  Schubert S. CHU

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/673

Abstract: Embodiments disclosed herein generally relate to apparatus and methods for controlling substrate outgassing such that hazardous gasses are eliminated from a surface of a substrate after a Si:As process has been performed on a substrate, and prior to additional processing. The apparatus includes a purge station including an enclosure, a gas supply coupled to the enclosure, an exhaust pump coupled to the enclosure, a first purge gas port formed in the enclosure, a first channel operatively connected to the gas supply at a first end and to the first purge gas port at a second end, a second purge gas port formed in the enclosure, and a second channel operatively connected to the second purge gas port at a third end and to the exhaust pump at a fourth end. The first channel includes a particle filter, a heater, and a flow controller. The second channel includes a dry scrubber.

公开(公告)号：US20190169767A1

公开(公告)日：2019-06-06

申请号：US16266646

申请日：2019-02-04

Applicant: Applied Materials, Inc.

Inventor： Xinyu BAO ,  Chun YAN ,  Hua CHUNG ,  Schubert S. CHU

IPC: C30B25/08 ,  C30B35/00 ,  C30B29/40 ,  H01L21/67 ,  C30B25/16 ,  C30B25/00 ,  C23C16/48 ,  C23C16/56 ,  C30B33/00 ,  C23C16/30 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a degassing chamber for reducing arsenic outgassing on the substrate. The degassing chamber includes a gas panel for supplying hydrogen, nitrogen, and oxygen and hydrogen chloride or chlorine gas to the chamber, a substrate support, a pump, and at least one heating mechanism. Residual or fugitive arsenic is removed from the substrate such that the substrate may be removed from the degassing chamber without dispersing arsenic into the ambient environment.

公开(公告)号：US20190035623A1

公开(公告)日：2019-01-31

申请号：US16148430

申请日：2018-10-01

Applicant: Applied Materials, Inc.

Inventor： Chun YAN ,  Xinyu BAO ,  Melitta Manyin HON ,  Hua CHUNG ,  Schubert S. CHU

IPC: H01L21/02 ,  H01L29/66

Abstract: Implementations described herein generally provide a method of processing a substrate. Specifically, the methods described are used for cleaning and etching source/drain regions on a silicon substrate in preparation for precise Group IV source/drain growth in semiconductor devices. Benefits of this disclosure include precise fin size control in devices, such as 10 nm FinFET devices, and increased overall device yield. The method of integrated clean and recess includes establishing a low pressure processing environment in the processing volume, and maintaining the low pressure processing environment while flowing a first gas over a substrate in a processing volume, depositing a salt on the substrate, heating the processing volume to greater than 90° C., purging the processing volume with a second inert gas, and recessing a source/drain region disposed on the substrate.

公开(公告)号：US20180286962A1

公开(公告)日：2018-10-04

申请号：US15926921

申请日：2018-03-20

Applicant: Applied Materials, Inc.

Inventor： Xinyu BAO ,  Zhiyuan YE ,  Hua CHUNG

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/167 ,  H01L29/08

CPC classification number: H01L29/6659 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/167 ,  H01L29/66795 ,  H01L29/7834 ,  H01L29/7851

Abstract: A device comprising Si:As source and drain extensions and Si:As or Si:P source and drain features formed using selective epitaxial growth and a method of forming the same is provided. The epitaxial layers used for the source and drain extensions and the source and drain features herein are deposited by simultaneous film formation and film etching, wherein the deposited material on the monocrystalline layer is etched at a slower rate than deposition material deposited on non-monocrystalline location of a substrate. As a result, an epitaxial layer is deposited on the monocrystalline surfaces, and a layer is not deposited on non-monocrystalline surfaces of the same base material, such as silicon.

公开(公告)号：US20180138032A1

公开(公告)日：2018-05-17

申请号：US15871264

申请日：2018-01-15

Applicant: Applied Materials, Inc.

Inventor： Chun YAN ,  Xinyu BAO

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/306 ,  B08B5/00

CPC classification number: H01L21/02065 ,  B08B5/00 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/30621 ,  H01L21/67023

Abstract: Embodiments described herein generally relate to improved methods and solutions for cleaning a substrate prior to epitaxial growth of Group III-V channel materials. A first processing gas, which includes a noble gas and a hydrogen source, is used to remove the native oxide layer from the substrate surface. A second processing gas, Ar/Cl2/H2, is then used to create a reactive surface layer on the substrate surface. Finally, a hydrogen bake with a third processing gas, which includes a hydrogen source and an arsine source, is used to remove the reactive layer from the substrate surface.

公开(公告)号：US20180082874A1

公开(公告)日：2018-03-22

申请号：US15267232

申请日：2016-09-16

Applicant: Applied Materials, Inc.

Inventor： Xinyu BAO ,  Chun YAN ,  Hua CHUNG ,  Schubert S. CHU

IPC: H01L21/673

CPC classification number: H01L21/67 ,  H01L21/673 ,  H01L21/67393 ,  H01L21/677

Abstract: Embodiments disclosed herein generally relate to apparatus and methods for controlling substrate outgassing such that hazardous gasses are eliminated from a surface of a substrate after a Si:As process has been performed on a substrate, and prior to additional processing. The apparatus includes a purge station including an enclosure, a gas supply coupled to the enclosure, an exhaust pump coupled to the enclosure, a first purge gas port formed in the enclosure, a first channel operatively connected to the gas supply at a first end and to the first purge gas port at a second end, a second purge gas port formed in the enclosure, and a second channel operatively connected to the second purge gas port at a third end and to the exhaust pump at a fourth end. The first channel includes a particle filter, a heater, and a flow controller. The second channel includes a dry scrubber.

公开(公告)号：US20180019121A1

公开(公告)日：2018-01-18

申请号：US15631185

申请日：2017-06-23

Applicant: Applied Materials, Inc.

Inventor： Xinyu BAO ,  Chun YAN ,  Zhiyuan YE ,  Errol Antonio C. SANCHEZ ,  David K. CARLSON

IPC: H01L21/02 ,  H01L29/24 ,  H01L29/78

CPC classification number: H01L21/02521 ,  H01L21/02381 ,  H01L21/0262 ,  H01L29/24 ,  H01L29/7848

Abstract: The present disclosure generally relate to methods for forming an epitaxial layer on a semiconductor device, including a method of forming a tensile-stressed silicon antimony layer. The method includes heating a substrate disposed within a processing chamber, wherein the substrate comprises silicon, and exposing a surface of the substrate to a gas mixture comprising a silicon-containing precursor and an antimony-containing precursor to form a silicon antimony alloy having an antimony concentration of 5×1020 to 5×1021 atoms per cubic centimeter or greater on the surface.