公开(公告)号：US06921673B2

公开(公告)日：2005-07-26

申请号：US10276748

申请日：2002-03-27

申请人： Toshimasa Kobayashi ,  Katsunori Yanashima ,  Takashi Yamaguchi ,  Hiroshi Nakajima

发明人： Toshimasa Kobayashi ,  Katsunori Yanashima ,  Takashi Yamaguchi ,  Hiroshi Nakajima

IPC分类号： H01L33/16 ,  H01L21/20 ,  H01L21/205 ,  H01L31/10 ,  H01L31/18 ,  H01L33/02 ,  H01L33/14 ,  H01L33/32 ,  H01S5/02 ,  H01S5/026 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343 ,  H01L21/00

CPC分类号： H01L21/0242 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L31/1852 ,  H01L33/007 ,  H01S5/0207 ,  H01S5/22 ,  H01S5/32341 ,  H01S2304/12 ,  Y02E10/544

摘要： Provided is a nitride semiconductor device with high reliability and high flexibility in design and manufacture of the device. The nitride semiconductor device comprises a seed crystal portion (11) formed on a sapphire substrate (10) and having a mask (12) on one side surface thereof, and a GaN layer (15) grown on the sapphire substrate (10) and the seed crystal portion (11) through epitaxial lateral overgrowth. The GaN layer (15) is grown only from an exposed side surface of the seed crystal portion (11) which is not covered with the mask (12), so the lateral growth of the GaN layer (15) is asymmetrically carried out. Thereby, a meeting portion (32) is formed in the vicinity of a boundary between the seed crystal portion (11) and the mask (12) in a thickness direction of the GaN layer (15). Therefore, as the meeting portion (32) is formed in a position away from the center between the adjacent seed crystal portions (11) in a direction parallel to a surface of the substrate, a width WL of a lateral growth region is larger with respect to a pitch WP of the seed crystal potion (11), compared with conventional configurations.

公开(公告)号：US20050098791A1

公开(公告)日：2005-05-12

申请号：US11001951

申请日：2004-12-02

申请人： Osamu Goto ,  Takeharu Asano ,  Motonobu Takeya ,  Katsunori Yanashima ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Yasuhiko Suzuki

发明人： Osamu Goto ,  Takeharu Asano ,  Motonobu Takeya ,  Katsunori Yanashima ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Yasuhiko Suzuki

IPC分类号： H01L21/20 ,  H01L29/04 ,  H01L29/20 ,  H01L33/00

CPC分类号： H01L29/045 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02645 ,  H01L29/2003 ,  H01L33/007

摘要： A nitride semiconductor having a large low-defect region in a surface thereof, and a semiconductor device using the same are provided. Also, a manufacturing method for a nitride semiconductor comprising a layer formation step using a transverse growth technique where surface defects can easily be reduced, and a manufacturing method for a semiconductor device using the same are provided. On a substrate, a seed crystal part is formed in a stripe pattern with a buffer layer in between. Next, crystals are grown from the seed crystal part in two stages of growth conditions to form a nitride semiconductor layer. Low temperature growing parts with a trapezoid shaped cross section are formed at a growth temperature of 1030° C. in the first stage and a transverse growth is dominantly advanced at a growth temperature of 1070° C. to form a high temperature growing part between the low temperature growing parts in the second stage. Thereby, hillocks and conventional lattice defects are reduced in a surface of the nitride semiconductor layer which is above the low temperature growing part.

公开(公告)号：US06890785B2

公开(公告)日：2005-05-10

申请号：US10372903

申请日：2003-02-24

申请人： Osamu Goto ,  Takeharu Asano ,  Motonobu Takeya ,  Katsunori Yanashima ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Yasuhiko Suzuki

发明人： Osamu Goto ,  Takeharu Asano ,  Motonobu Takeya ,  Katsunori Yanashima ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Yasuhiko Suzuki

IPC分类号： H01L21/20 ,  H01L29/04 ,  H01L29/20 ,  H01L33/00 ,  H01L21/00

CPC分类号： H01L29/045 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02645 ,  H01L29/2003 ,  H01L33/007

摘要： A nitride semiconductor having a large low-defect region in a surface thereof, and a semiconductor device using the same are provided. Also, a manufacturing method for a nitride semiconductor comprising a layer formation step using a transverse growth technique where surface defects can easily be reduced, and a manufacturing method for a semiconductor device using the same are provided. On a substrate, a seed crystal part is formed in a stripe pattern with a buffer layer in between. Next, crystals are grown from the seed crystal part in two stages of growth conditions to form a nitride semiconductor layer. Low temperature growing parts with a trapezoid shaped cross section are formed at a growth temperature of 1030° C. in the first stage and a transverse growth is dominantly advanced at a growth temperature of 1070° C. to form a high temperature growing part between the low temperature growing parts in the second stage. Thereby, hillocks and conventional lattice defects are reduced in a surface of the nitride semiconductor layer which is above the low temperature growing part.

摘要翻译： 提供了其表面具有大的低缺陷区域的氮化物半导体和使用其的半导体器件。 而且，提供一种氮化物半导体的制造方法，其包括使用横向生长技术的层形成步骤，其中可以容易地降低表面缺陷，并且提供了使用其的半导体器件的制造方法。 在基板上，以条纹图案形成晶种部分，其间具有缓冲层。 接下来，在生长条件的两个阶段从晶种部分生长晶体以形成氮化物半导体层。 在第一阶段中在1030℃的生长温度下形成具有梯形横截面的低温生长部件，并且在1070℃的生长温度下横向生长主要进展，以形成高温生长部分 低温生长部件在第二阶段。 因此，在低温生长部分以上的氮化物半导体层的表面，减少了小丘和常规晶格缺陷。

公开(公告)号：US09231370B2

公开(公告)日：2016-01-05

申请号：US13453743

申请日：2012-04-23

申请人： Takamichi Sumitomo ,  Takashi Kyono ,  Masaki Ueno ,  Yusuke Yoshizumi ,  Yohei Enya ,  Masahiro Adachi ,  Shimpei Takagi ,  Katsunori Yanashima

发明人： Takamichi Sumitomo ,  Takashi Kyono ,  Masaki Ueno ,  Yusuke Yoshizumi ,  Yohei Enya ,  Masahiro Adachi ,  Shimpei Takagi ,  Katsunori Yanashima

IPC分类号： H01S5/042 ,  H01S5/32 ,  H01S5/343 ,  B82Y20/00 ,  H01S5/02 ,  H01S5/028 ,  H01S5/22

CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34333

摘要： A group III nitride semiconductor laser device includes a laser structure, an insulating layer, an electrode and dielectric multilayers. The laser structure includes a semiconductor region on a semi-polar primary surface of a hexagonal group III nitride semiconductor support base. The dielectric multilayers are on first and second end-faces for the laser cavity. The c-axis of the group III nitride tilts by an angle ALPHA from the normal axis of the primary surface in the waveguide axis direction from the first end-face to the second end-faces. A pad electrode has first to third portions provided on the first to third regions of the semiconductor regions, respectively. An ohmic electrode is in contact with the third region through an opening of the insulating layer. The first portion has a first arm, which extends to the first end-face edge. The third portion is away from the first end-face edge.

摘要翻译： III族氮化物半导体激光器件包括激光器结构，绝缘层，电极和电介质多层。 激光器结构包括在六方晶III族氮化物半导体支撑基体的半极性主表面上的半导体区域。 电介质多层在激光腔的第一和第二端面上。 III族氮化物的c轴从第一端面到第二端面在波导轴线方向上从主面的法线倾斜角度ALPHA。 焊盘电极具有分别设置在半导体区域的第一至第三区域上的第一至第三部分。 欧姆电极通过绝缘层的开口与第三区域接触。 第一部分具有延伸到第一端面边缘的第一臂。 第三部分远离第一端面边缘。

公开(公告)号：US08718110B2

公开(公告)日：2014-05-06

申请号：US13366636

申请日：2012-02-06

申请人： Takashi Kyono ,  Yohei Enya ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Katsunori Yanashima ,  Kunihiko Tasai ,  Hiroshi Nakajima

发明人： Takashi Kyono ,  Yohei Enya ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Katsunori Yanashima ,  Kunihiko Tasai ,  Hiroshi Nakajima

IPC分类号： H01S5/00

CPC分类号： H01S5/3201 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： A nitride semiconductor laser includes an electrically conductive support substrate with a primary surface of a gallium nitride based semiconductor, an active layer provided above the primary surface, and a p-type cladding region provided above the primary surface. The primary surface is inclined relative to a reference plane perpendicular to a reference axis extending in a direction of the c-axis of the gallium nitride based semiconductor. The p-type cladding region includes first and second p-type Group III nitride semiconductor layers. The first p-type semiconductor layer comprises an InAlGaN layer including built-in anisotropic strain. The second p-type semiconductor layer comprises semiconductor different from material of the InAlGaN layer. The first nitride semiconductor layer is provided between the second p-type semiconductor layer and the active layer. The second p-type semiconductor layer has a resistivity lower than that of the first p-type semiconductor layer.

摘要翻译： 氮化物半导体激光器包括具有氮化镓基半导体的主表面的导电支撑衬底，设置在主表面上方的有源层和设置在主表面上的p型覆层区域。 主表面相对于垂直于在氮化镓基半导体的c轴方向上延伸的参考轴的参考平面倾斜。 p型包层区域包括第一和第二p型III族氮化物半导体层。 第一p型半导体层包括包括内置各向异性应变的InAlGaN层。 第二p型半导体层包括与InAlGaN层的材料不同的半导体。 第一氮化物半导体层设置在第二p型半导体层和有源层之间。 第二p型半导体层的电阻率低于第一p型半导体层的电阻率。

公开(公告)号：US20110142090A1

公开(公告)日：2011-06-16

申请号：US12962252

申请日：2010-12-07

申请人： Mikihiro Yokozeki ,  Junji Sawahata ,  Katsunori Yanashima ,  Miwa Okubo

发明人： Mikihiro Yokozeki ,  Junji Sawahata ,  Katsunori Yanashima ,  Miwa Okubo

IPC分类号： H01S5/22 ,  H01L21/78

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2304/12

摘要： A laser diode includes: a substrate; a semiconductor layer including a lower cladding layer, an active layer, and an upper cladding layer; a strip-shaped ridge provided on an upper cladding layer side in the semiconductor layer; and a pair of resonator end faces sandwiching the semiconductor layer and the ridge. The substrate includes strip-shaped grooves provided on both sides of a portion facing the ridge along the portion facing the ridge, and extending in a direction different from a direction orthogonal to the extending direction of the ridge, and L1, L2, and L3 satisfy the following relationship, L1

摘要翻译： 激光二极管包括：基板; 包括下包层，有源层和上包层的半导体层; 设置在半导体层的上部包层侧的条状的脊; 以及夹着半导体层和脊的一对谐振器端面。 基板包括沿着与脊相对的面向脊的部分的两侧设置并且沿与脊的延伸方向正交的方向不同的方向延伸的条形槽，并且L1，L2和L3满足 L1

公开(公告)号：US07282379B2

公开(公告)日：2007-10-16

申请号：US11086597

申请日：2005-03-22

申请人： Osamu Goto ,  Takeharu Asano ,  Motonobu Takeya ,  Katsunori Yanashima

发明人： Osamu Goto ,  Takeharu Asano ,  Motonobu Takeya ,  Katsunori Yanashima

IPC分类号： H01L21/20

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01S5/0207 ,  H01S5/32341 ,  H01S2304/12

摘要： Provided is a nitride semiconductor having a larger low-defective region on a surface thereof, a semiconductor device using the nitride semiconductor, a method of manufacturing a nitride semiconductor capable of easily reducing surface defects in a step of forming a layer through lateral growth, and a method of manufacturing a semiconductor device manufactured by the use of the nitride semiconductor. A seed crystal portion is formed into stripes on a substrate with a buffer layer sandwiched therebetween. Then, a crystal is grown from the seed crystal portion in two steps of growth conditions to form a nitride semiconductor layer. In a first step, a low temperature growth portion having a trapezoidal-shaped cross section in a layer thickness direction is formed at a growth temperature of 1030° C., and in a second step, lateral growth predominantly takes place at a growth temperature of 1070° C. Then, a high temperature growth potion is formed between the low temperature growth portions. Thereby, hillocks and lattice defects can be reduced in a region of the surface of the nitride semiconductor layer above the low temperature growth portion.

摘要翻译： 提供一种其表面上具有较大缺陷区域的氮化物半导体，使用该氮化物半导体的半导体器件，能够通过横向生长形成层的步骤中能够容易地减少表面缺陷的氮化物半导体的制造方法，以及 制造通过使用氮化物半导体制造的半导体器件的方法。 籽晶部分在衬底上形成条纹，缓冲层夹在其间。 然后，在生长条件的两个步骤中从籽晶部分生长晶体，以形成氮化物半导体层。 在第一步骤中，在1030℃的生长温度下形成具有层厚度方向的梯形截面的低温生长部分，在第二步骤中，横向生长主要发生在生长温度 1070℃。然后，在低温生长部分之间形成高温生长剂。 因此，可以在低温生长部分以上的氮化物半导体层的表面的区域中减小小丘和晶格缺陷。

公开(公告)号：US20050221515A1

公开(公告)日：2005-10-06

申请号：US10813371

申请日：2004-03-30

申请人： Katsunori Yanashima ,  Kensaku Motoki

发明人： Katsunori Yanashima ,  Kensaku Motoki

IPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/00 ,  H01L21/20 ,  H01L29/221 ,  H01L33/00 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/343

CPC分类号： C30B29/403 ,  B82Y20/00 ,  C30B25/02 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01S5/0202 ,  H01S5/2004 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3063 ,  H01S5/3215 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12

摘要： A method for producing a semiconductor light emitting device is disclosed. The method comprises the step of growing a nitride type III-V group compound semiconductor layer that forms a light emitting device structure on a principal plane of a nitride type III-V group compound semiconductor substrate on which a plurality of second regions made of a crystal having a second average dislocation density are regularly arranged in a first region made of a crystal having a first average dislocation density so as to produce a semiconductor light emitting device, the second average dislocation density being greater than the first average dislocation density. The nitride type III-V group compound semiconductor layer does not directly contact the second regions on the principal plane of the nitride type III-V group compound semiconductor substrate.

摘要翻译： 公开了一种制造半导体发光器件的方法。 该方法包括在氮化物III-V族化合物半导体衬底的主平面上生长形成发光器件结构的氮化物III-V族化合物半导体层的步骤，其中多个第二区域由晶体 具有第二平均位错密度的第二平均位错密度规则地布置在由具有第一平均位错密度的晶体制成的第一区域中以产生半导体发光器件，第二平均位错密度大于第一平均位错密度。 氮化物III-V族化合物半导体层不直接接触氮化物III-V族化合物半导体衬底的主面上的第二区域。