Method and apparatus for electron density measurement and verifying process status
    31.
    发明授权
    Method and apparatus for electron density measurement and verifying process status 失效
    用于电子密度测量和验证过程状态的方法和装置

    公开(公告)号:US07263447B2

    公开(公告)日:2007-08-28

    申请号:US10495864

    申请日:2003-01-30

    申请人: Eric J. Strang

    发明人: Eric J. Strang

    IPC分类号: C23C16/00 G01F1/00

    摘要: An equipment status monitoring system and method of operating thereof is described. The equipment status monitoring system includes at least one microwave mirror in a plasma processing chamber forming a multi-modal resonator. A power source is coupled to a mirror and configured to produce an excitation signal extending along an axis generally perpendicular to a substrate. A detector is coupled to a mirror and configured to measure an excitation signal. A control system is connected to the detector that compares a measured excitation signal to a normal excitation signal in order to determine a status of the material processing equipment.

    摘要翻译: 描述了设备状态监视系统及其操作方法。 设备状态监测系统包括形成多模谐振器的等离子体处理室中的至少一个微波反射镜。 电源耦合到反射镜并且被配置为产生沿着大致垂直于衬底的轴延伸的激励信号。 检测器耦合到反射镜并且被配置为测量激励信号。 控制系统连接到检测器,其将测量的激励信号与正常激励信号进行比较,以便确定材料处理设备的状态。

    Method and apparatus for tuning a plasma reactor chamber
    32.
    发明授权
    Method and apparatus for tuning a plasma reactor chamber 有权
    调整等离子体反应室的方法和装置

    公开(公告)号:US06960887B2

    公开(公告)日:2005-11-01

    申请号:US10359556

    申请日:2003-02-07

    摘要: A plasma reactor or vacuum processing apparatus is provided with an orifice plate assembly. The orifice plate assembly includes an upper plate and a lower plate. Each plate is configured with through holes. The upper and lower orifice plates are independently rotatable with respect to each other. The plates are arranged within the vacuum chamber a discharge reactor such that the chuck assembly is disposed within an opening in the orifice plate assembly. The orifice plate assembly is further configured to have a perimeter shape that substantially matches the interior wall shape of vacuum chamber.

    摘要翻译: 等离子体反应器或真空处理装置设置有孔板组件。 孔板组件包括上板和下板。 每个板配置有通孔。 上下孔板可独立地相对于彼此旋转。 板在真空室内布置有排放反应器,使得卡盘组件设置在孔板组件的开口内。 孔板组件进一步构造成具有与真空室的内壁形状基本匹配的周边形状。

    Apparatus and method for improving microwave coupling to a resonant cavity
    33.
    发明授权
    Apparatus and method for improving microwave coupling to a resonant cavity 失效
    用于改善与谐振腔的微波耦合的装置和方法

    公开(公告)号:US06954077B2

    公开(公告)日:2005-10-11

    申请号:US10495774

    申请日:2003-01-31

    申请人: Eric J. Strang

    发明人: Eric J. Strang

    摘要: An equipment status monitoring system (10) and method of operating includes first (40) and second (50) microwave mirrors in a plasma processing chamber (20) each forming a multi-modal resonator. A power source (60) is coupled to the first mirror (40) and configured to produce an excitation signal. A detector (70) is coupled to at least one of the first mirror (40) and the second mirror (50) and configured to measure an excitation signal. At least one of the power source (60) and the detector (70) is coupled to a divergent aperture (44).

    摘要翻译: 设备状态监测系统(10)和操作方法包括等离子体处理室(20)中的每个形成多模共振器的第一(40)和第二(50)微波反射镜。 电源(60)耦合到第一反射镜(40)并且被配置为产生激励信号。 检测器(70)耦合到第一反射镜(40)和第二反射镜(50)中的至少一个并被配置成测量激励信号。 电源(60)和检测器(70)中的至少一个耦合到发散孔(44)。

    Method and apparatus for active temperature control of susceptors

    公开(公告)号:US06949722B2

    公开(公告)日:2005-09-27

    申请号:US10630783

    申请日:2003-07-31

    摘要: A method and an apparatus utilized for thermal processing of substrates during semiconductor manufacturing. The method includes heating the substrate to a predetermined temperature using a heating assembly, cooling the substrate to the predetermined temperature using a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and adjusting a thermal conductance of the thermal conductance region to aid in heating and cooling of the substrate. The apparatus includes a heating assembly, a cooling assembly located such that a thermal conductance region is provided between the heating and cooling assemblies, and a structure or configuration for adjusting a thermal conductance of the thermal conductance region.

    Monitoring material buildup on system components by optical emission

    公开(公告)号:US06806949B2

    公开(公告)日:2004-10-19

    申请号:US10331349

    申请日:2002-12-31

    IPC分类号: G01N2100

    CPC分类号: G01N21/68 G01N21/64

    摘要: A method and system are provided for monitoring material buildup on system components in a plasma processing system. The system components contain emitters that are capable of producing characteristic fluorescent light emission when exposed to a plasma. The method utilizes optical emission to monitor fluorescent light emission from the emitters for determining system component status. The method can evaluate material buildup on system components in a plasma, by monitoring fluorescent light emission from the emitters. Consumable system components that can be monitored using the method include rings, shields, electrodes, baffles, and liners.

    Method and apparatus for atomic layer deposition
    36.
    发明授权
    Method and apparatus for atomic layer deposition 有权
    用于原子层沉积的方法和装置

    公开(公告)号:US08562743B2

    公开(公告)日:2013-10-22

    申请号:US13098991

    申请日:2011-05-02

    申请人: Eric J. Strang

    发明人: Eric J. Strang

    IPC分类号: C23C16/00 C23F1/00 H01L21/306

    摘要: A high pressure processing system including a chamber configured to house a substrate. A fluid introduction system includes at least one composition supply system configured to supply a first composition and a second composition, and at least one fluid supply system configured to supply a fluid. The fluid supply system is configured to alternately and discontinuously introduce the first composition and the second composition to the chamber within the fluid.

    摘要翻译: 一种高压处理系统,包括被构造成容纳基板的室。 流体引入系统包括配置成供应第一组合物和第二组合物的至少一种组合物供应系统,以及配置成供应流体的至少一个流体供应系统。 流体供应系统被配置为交替地和不连续地将第一组合物和第二组合物引入流体内的室。

    THERMALLY ZONED SUBSTRATE HOLDER ASSEMBLY
    37.
    发明申请
    THERMALLY ZONED SUBSTRATE HOLDER ASSEMBLY 审中-公开
    热隔离的基座支架组件

    公开(公告)号:US20120067866A1

    公开(公告)日:2012-03-22

    申请号:US13307176

    申请日:2011-11-30

    IPC分类号: H05B3/02 F25B21/02

    CPC分类号: H01L21/67103 Y10T279/23

    摘要: A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).

    摘要翻译: 一种热分区衬底保持器,其包括基本上圆柱形的基部,其具有构造成支撑衬底的顶表面和底表面。 多个温度控制元件设置在基座内。 绝缘体将温度控制元件热分离。 绝缘体由具有比基底(例如,气体或真空填充的室)更低的导热系数的绝缘材料制成。

    Thermally zoned substrate holder assembly
    38.
    发明授权
    Thermally zoned substrate holder assembly 有权
    热分区衬底支架组件

    公开(公告)号:US08092602B2

    公开(公告)日:2012-01-10

    申请号:US11961355

    申请日:2007-12-20

    IPC分类号: C23C16/00 C23C16/46

    CPC分类号: H01L21/67103 Y10T279/23

    摘要: A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).

    摘要翻译: 一种热分区衬底保持器,其包括基本上圆柱形的基部,其具有构造成支撑衬底的顶表面和底表面。 多个温度控制元件设置在基座内。 绝缘体将温度控制元件热分离。 绝缘体由具有比基底(例如,气体或真空填充的室)更低的导热系数的绝缘材料制成。

    METHOD AND SYSTEM FOR CONTROLLING RADICAL DISTRIBUTION
    40.
    发明申请
    METHOD AND SYSTEM FOR CONTROLLING RADICAL DISTRIBUTION 有权
    用于控制辐射分布的方法和系统

    公开(公告)号:US20100193471A1

    公开(公告)日:2010-08-05

    申请号:US12754662

    申请日:2010-04-06

    IPC分类号: C23F1/00 C23C16/52

    摘要: A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.

    摘要翻译: 等离子体处理系统包括处理室,被配置为保持用于等离子体处理的衬底的衬底保持器和气体注入组件。 气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口,以及构造成在处理室中注入气体的气体注入系统。 等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。