Abstract:
A plurality of spectra reflected from one or more substrates at a plurality of different positions on the one or more substrates are represented in the form of a first matrix, and the first matrix is decomposed into products of at least two component matrixes of a first set of component matrixes. The dimensions of each of the at least two component matrixes is reduced to produce a second set of component matrixes containing the at least two matrixes with reduced dimensions.
Abstract:
In one aspect, a method of polishing includes polishing a substrate, and receiving an identification of a selected spectral feature and a characteristic of the selected spectral feature to monitor during polishing. The method includes measuring a sequence of spectra of light reflected from the substrate while the substrate is being polished, where at least some of the spectra of the sequence differ due to material being removed during the polishing. The method of polishing includes determining a value of a characteristic of the selected spectral feature for each of the spectra in the sequence of spectra to generate a sequence of values for the characteristic, fitting a function to the sequence of values, and determining either a polishing endpoint or an adjustment for a polishing rate based on the function.
Abstract:
A method of controlling polishing includes storing a desired ratio representing a ratio for a clearance time of a first zone of a substrate to a clearance time of a second zone of the substrate. During polishing of a first substrate, an overlying layer is monitored, a sequence of measurements is generated, and the measurements are sorted a first group associated with the first zone of the substrate and a second group associated with the second zone on the substrate. A first time and a second time at which the overlying layer is cleared is determined based on the measurements from the first group and the second group, respectively. At least one adjusted polishing pressure is calculated for the first zone based on a first pressure applied in the first zone during polishing the first substrate, the first time, the second time, and the desired ratio.
Abstract:
A polishing apparatus includes a plurality of stations supported on a platform, the plurality of stations including at least two polishing stations and a transfer station, each polishing station including a platen to support a polishing pad, a plurality of carrier heads suspended from and movable along a track such that each polishing station is selectively positionable at the stations, and a controller configured to control motion of the carrier heads along the track such that during polishing at each polishing station only a single carrier head is positioned in the polishing station.
Abstract:
A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain.
Abstract:
A substrate for use in fabrication of an integrated circuit has a layer with a plurality of conductive interconnects. The substrate includes a semiconductor body, a dielectric layer disposed over the semiconductor body, a plurality of conductive lines of a conductive material disposed in first trenches in the dielectric layer to provide the conductive interconnects, and a closed conductive loop structure of the conductive material disposed in second trenches in the dielectric layer. The closed conductive loop is not electrically connected to any of the conductive lines.
Abstract:
Methods and apparatus for spectrum-based endpointing. An endpointing method includes selecting a reference spectrum. The reference spectrum is a spectrum of white light reflected from a film of interest on a first substrate and has a thickness greater than a target thickness. The reference spectrum is empirically selected for particular spectrum-based endpoint determination logic so that the target thickness is achieved when endpoint is called by applying the particular spectrum-based endpoint logic. The method includes obtaining a current spectrum. The current spectrum is a spectrum of white light reflected from a film of interest on a second substrate when the film of interest is being subjected to a polishing step and has a current thickness that is greater than the target thickness. The method includes determining, for the second substrate, when an endpoint of the polishing step has been achieved. The determining is based on the reference and current spectra.
Abstract:
A method of controlling a polishing operation includes measuring a plurality of spectra at a plurality of different positions on a substrate to provide a plurality of measured spectra. For each measured spectrum of the plurality of measured spectra, a characterizing value is generated based on the measured spectrum. For each characterizing value, a goodness of fit of the measured spectrum to another spectrum used in generating the characterizing value is determined. A wafer-level characterizing value map is generated by applying a regression to the plurality of characterizing values with the plurality of goodnesses of fit used as weighting factors in the regression. A polishing endpoint or a polishing parameter of the polishing apparatus is adjusted based on the wafer-level characterizing map, and the substrate or a subsequent substrate is polished in the polishing apparatus with the adjusted polishing endpoint or polishing parameter.
Abstract:
A polishing apparatus includes a platen to hold a polishing pad having a plurality of optical apertures, a carrier head to hold a substrate against the polishing pad, a motor to generate relative motion between the carrier head and the platen, and an optical monitoring system. The optical monitoring system includes at least one light source, a common detector, and an optical assembly configured to direct light from the at least one light source to each of a plurality of separated positions in the platen, to direct light from each position of the plurality of separated positions to the substrate as the substrate passes over said each position, to receive reflected light from the substrate as the substrate passes over said each position, and to direct the reflected light from each of the plurality of separated positions to the common detector.
Abstract:
A method of forming a polishing pad with a polishing layer having a polishing surface and a back surface. A plurality of grooves are formed on the polishing surface, and an indentation is formed in the back surface of the polishing layer. A region on the polishing surface corresponding to the indentation in the back surface is free of grooves or has shallower grooves.