公开(公告)号：US20190062916A1

公开(公告)日：2019-02-28

申请号：US16115051

申请日：2018-08-28

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Jeffrey W. Anthis

IPC: C23C16/455 ,  C23C16/40 ,  C07F5/00

Abstract: Methods for depositing a film comprising exposing a substrate surface to a bis-amidinate metal precursor and a co-reactant to form a metal containing film are described. The bis-amidinate metal precursor comprises a metal atom comprising one or more lanthanide.

公开(公告)号：US20180342403A1

公开(公告)日：2018-11-29

申请号：US15606461

申请日：2017-05-26

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  David Thompson ,  Benjamin Schmiege

IPC: H01L21/465 ,  H01L21/02

CPC classification number: H01L21/465 ,  H01L21/0228 ,  H01L21/02565 ,  H01L21/28194 ,  H01L21/32135

Abstract: A process to selectively etch a substrate surface comprising multiple metal oxides comprising exposing the substrate surface to a halogenation agent, and then exposing the substrate surface to a ligand transfer agent. The etch rate of the metals in the multiple metal oxides is substantially uniform.

公开(公告)号：US20180291051A1

公开(公告)日：2018-10-11

申请号：US15947697

申请日：2018-04-06

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Atashi Basu

IPC: C07F15/06 ,  C07F13/00 ,  C07F15/00 ,  C07F15/02 ,  C07F15/04 ,  C23C16/18 ,  C23C16/455

Abstract: Metal coordination complexes comprising at least one diazabutadiene based ligand having a structure represented by: where A1, A2, A3, and A4 are atoms in a 6-membered ring and are independently selected from C, N, O, S, and P; and where R1, R2, R3, R4, R5, and R6 are independently selected from the group consisting of H, amino groups, C1-C6 alkyl groups, or C4-10 cycloalkyl groups; and further provided that alkyl groups may optionally contain silicon; and where the metal coordination complex is capable of participating in a Diels-Alder type reaction with a dienophile. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US10036089B2

公开(公告)日：2018-07-31

申请号：US14316126

申请日：2014-06-26

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Jeffrey W. Anthis

IPC: C23C16/08 ,  C23C16/18 ,  C23C16/455

CPC classification number: C23C16/08 ,  C23C16/18 ,  C23C16/45553

Abstract: Provided are methods of depositing films comprising exposing at least a portion of a substrate to a metal precursor to provide a first metal on the substrate and an organometallic reducing agent to deposit a second metal on the substrate to form a mixture or alloy of the first metal and the second metal. Exposure to the metal precursor and organometallic reducing agent can be in either order or simultaneously.

公开(公告)号：US20180195170A1

公开(公告)日：2018-07-12

申请号：US15863348

申请日：2018-01-05

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Ghazal Saheli ,  Feng Q. Liu ,  David Thompson

IPC: C23C16/40 ,  C23C16/455

CPC classification number: C23C16/40 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45553

Abstract: Processing methods comprising exposing a substrate to a first reactive gas comprising a cyclopentadienyl nickel complex and a second reactive gas comprising a sub-saturative amount of oxygen to form a nickel oxide film with a carbon content in the range of about 2 to about 10 atomic percent are described.

公开(公告)号：US20180096847A1

公开(公告)日：2018-04-05

申请号：US15718148

申请日：2017-09-28

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan

IPC: H01L21/033 ,  C23F1/00 ,  H01L21/3213

CPC classification number: H01L21/0338 ,  C23F1/00 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/32133 ,  H01L21/32139

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US09390940B2

公开(公告)日：2016-07-12

申请号：US14206474

申请日：2014-03-12

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Benjamin Schmiege ,  David Thompson

IPC: H01L21/302 ,  H01L21/3213 ,  C23F1/00 ,  H01J37/32 ,  C23F1/12 ,  C23F4/00

CPC classification number: H01L21/32136 ,  C23F1/00 ,  C23F1/12 ,  C23F4/00 ,  H01J37/32715 ,  H01J37/32862 ,  H01L21/32135

Abstract: Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni.

Abstract translation: 提供了用于蚀刻包含过渡金属的膜的方法。 某些方法包括激活包含至少一种过渡金属的基底表面，其中基底表面的活化包括将基底表面暴露于加热，等离子体，氧化环境或卤化物转移剂以提供活化的基底表面; 以及将活化的底物表面暴露于包含路易斯碱或pi酸的试剂中，以提供包含一个或多个与试剂配位的一个或多个配体配位的过渡金属原子的气相配位络合物。 某些其它方法提供了选自多层衬底的选择性蚀刻，所述多层衬底包括Co层，Cu层和Ni层中的两层或多层。

公开(公告)号：US20160032455A1

公开(公告)日：2016-02-04

申请号：US14815625

申请日：2015-07-31

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Ben-Li Sheu ,  David Thompson ,  Mei Chang ,  Paul F. Ma ,  David Knapp ,  Jeffrey W. Anthis ,  Annamalai Lakshmanan

IPC: C23C16/455 ,  C25D3/38 ,  C25D5/34 ,  C23C16/18 ,  C23C16/02

CPC classification number: C23C16/45553 ,  C23C16/045 ,  C23C16/18 ,  H01L21/28562 ,  H01L21/76873

Abstract: Methods of depositing a metal layer utilizing organometallic compounds. A substrate surface is exposed to a gaseous organometallic metal precursor and an organometallic metal reactant to form a metal layer (e.g., a copper layer) on the substrate.

Abstract translation: 利用有机金属化合物沉积金属层的方法。 衬底表面暴露于气态有机金属金属前体和有机金属金属反应物以在衬底上形成金属层（例如铜层）。

公开(公告)号：US09090641B2

公开(公告)日：2015-07-28

申请号：US13780939

申请日：2013-02-28

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis

IPC: C07F15/06 ,  C07F13/00 ,  C23C16/04 ,  C23C16/18 ,  C23C16/455 ,  C07D277/28

CPC classification number: C07F15/065 ,  C07D277/28 ,  C07F13/005 ,  C23C16/04 ,  C23C16/18 ,  C23C16/45553

Abstract: Provided are metal coordination complexes comprising a pyrrole or imidazole-based ligands and cobalt or manganese. Also provided are methods for the selective deposition of cobalt and/or manganese films on metal surfaces using these metal coordination complexes comprising a pyrrole or imidazole-based ligand.

Abstract translation: 提供了包含吡咯或咪唑基配体和钴或锰的金属配位络合物。 还提供了使用包含吡咯或咪唑基配体的这些金属配位络合物在金属表面上选择性沉积钴和/或锰膜的方法。

公开(公告)号：US20150129546A1

公开(公告)日：2015-05-14

申请号：US14513517

申请日：2014-10-14

Applicant: Applied Materials, Inc.

Inventor： Nitin K. Ingle ,  Jessica Sevanne Kachian ,  Lin Xu ,  Soonam Park ,  Xikun Wang ,  Jeffrey W. Anthis

IPC: C23F1/12 ,  C23F1/02

CPC classification number: H01L21/3065 ,  C23F1/02 ,  C23F1/12 ,  C23F4/00 ,  H01J37/3244 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitride and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. No plasma excites the halogen-containing precursor either remotely or locally in embodiments.

Abstract translation: 描述了从衬底表面选择性地蚀刻含金属材料的方法。 蚀刻相对于含硅膜如硅，多晶硅，氧化硅，硅锗，碳化硅，氮化硅和/或氮化硅选择性去除含金属的材料。 这些方法包括将含金属的材料暴露于基底处理区域中含有卤素的物质。 在实施例中，没有等离子体远程地或局部地激发含卤素的前体。