公开(公告)号：US11735420B2

公开(公告)日：2023-08-22

申请号：US17014975

申请日：2020-09-08

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Yuanhong Guo ,  Liqi Wu ,  Michael S. Jackson ,  Ludovic Godet ,  Tobin Kaufman-Osborn ,  Erica Chen ,  Paul F. Ma

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/67 ,  H01L21/3105 ,  H01L21/683 ,  H01L21/32

CPC classification number: H01L21/0271 ,  H01L21/0206 ,  H01L21/0228 ,  H01L21/02057 ,  H01L21/02181 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/02334 ,  H01L21/3105 ,  H01L21/67207 ,  H01L21/32 ,  H01L21/6831

Abstract: Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.

公开(公告)号：US20230187282A1

公开(公告)日：2023-06-15

申请号：US17551381

申请日：2021-12-15

Applicant: Applied Materials, Inc.

Inventor： Thomas Anthony Empante ,  Avgerinos V. Gelatos ,  Zhibo Yuan ,  Liqi Wu ,  Joung Joo Lee ,  Byunghoon Yoon

IPC: H01L21/8238 ,  H01L27/092

CPC classification number: H01L21/823814 ,  H01L27/092 ,  H01L21/76843

Abstract: Methods for forming a semiconductor structure and semiconductor structures are described. The method comprises patterning a substrate to form a first opening and a second opening, the substrate comprising an n transistor and a p transistor, the first opening over the n transistor and the second opening over the p transistor. The substrate may be pre-cleaned. A ruthenium silicide (RuSi) layer is selectively deposited on the p transistor. A titanium silicide (TiSi) layer is formed on the n transistor and the p transistor. An optional barrier layer may be formed on the titanium silicide (TiSi) layer. The method may be performed in a processing chamber without breaking vacuum.

公开(公告)号：US20220325410A1

公开(公告)日：2022-10-13

申请号：US17847351

申请日：2022-06-23

Applicant: Applied Materials, Inc.

Inventor： Byunghoon Yoon ,  Liqi Wu ,  Joung Joo Lee ,  Kai Wu ,  Xi Cen ,  Wei Lei ,  Sang Ho Yu ,  Seshadri Ganguli

IPC: C23C16/455 ,  C23C28/02 ,  C23C16/02 ,  H01L21/02

Abstract: Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.

公开(公告)号：US20220231137A1

公开(公告)日：2022-07-21

申请号：US17152190

申请日：2021-01-19

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Joung Joo Lee ,  Wenting Hou ,  Takashi Kuratomi ,  Avgerinos V. Gelatos ,  Jianxin Lei ,  Liqi Wu ,  Raymond Hoiman Hung ,  Tae Hong Ha ,  Xianmin Tang

IPC: H01L29/417 ,  H01L21/285 ,  H01L21/8234

Abstract: A contact stack of a semiconductor device comprises: a source/drain region; a metal silicide layer above the source/drain region; a metal cap layer directly on the metal silicide layer; and a conductor on the metal cap layer. A method comprises: depositing a metal silicide layer in a feature of a substrate; in the absence of an air break after the depositing of the metal silicide layer, preparing a metal cap layer directly on the metal silicide layer; and depositing a conductor on the metal cap layer.

公开(公告)号：US20210217615A1

公开(公告)日：2021-07-15

申请号：US17197866

申请日：2021-03-10

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Michael S. Jackson ,  Liqi Wu ,  Lei Zhou ,  Shuyi Zhang ,  David Thompson ,  Paul F. Ma ,  Biao Liu ,  Cheng Pan

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/56 ,  H01L21/3105

Abstract: Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.

公开(公告)号：US20210189562A1

公开(公告)日：2021-06-24

申请号：US17182906

申请日：2021-02-23

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Tobin Kaufman-Osborn ,  Kurt Fredrickson ,  Thomas Knisley ,  Liqi Wu

IPC: C23C16/455 ,  H01L21/02

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

公开(公告)号：US10957590B2

公开(公告)日：2021-03-23

申请号：US16669082

申请日：2019-10-30

Applicant: Applied Materials, Inc.

Inventor： Wenhui Wang ,  Huixiong Dai ,  Christopher S. Ngai ,  Liqi Wu ,  Wenyu Zhang ,  Yongmei Chen ,  Hao Chen ,  Keith Tatseun Wong ,  Ke Chang

IPC: H01L21/768 ,  H01L23/535 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits, and more particularly, to methods for forming a layer. The layer may be a mask used in lithography process to pattern and form a trench. The mask is formed over a substrate having at least two distinct materials by a selective deposition process. The edges of the mask are disposed on an intermediate layer formed on at least one of the two distinct materials. The method includes removing the intermediate layer to form a gap between edges of the mask and the substrate and filling the gap with a different material than the mask or with the same material as the mask. By filling the gap with the same or different material as the mask, electrical paths are improved.

公开(公告)号：US10950433B2

公开(公告)日：2021-03-16

申请号：US16193594

申请日：2018-11-16

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Michael S. Jackson ,  Liqi Wu ,  Lei Zhou ,  Shuyi Zhang ,  David Thompson ,  Paul F. Ma ,  Biao Liu ,  Cheng Pan

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/32

Abstract: Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.

公开(公告)号：US10608097B2

公开(公告)日：2020-03-31

申请号：US16033880

申请日：2018-07-12

Applicant: Applied Materials, Inc.

Inventor： Paul F. Ma ,  Seshadri Ganguli ,  Shih Chung Chen ,  Rajesh Sathiyanarayanan ,  Atashi Basu ,  Lin Dong ,  Naomi Yoshida ,  Sang Ho Yu ,  Liqi Wu

IPC: H01L29/51 ,  H01L21/28 ,  H01L29/40 ,  H01L29/49 ,  H01L21/285 ,  H01L21/8234 ,  H01L21/8238

Abstract: Film stacks and methods of forming film stacks including a high-k dielectric layer on a substrate, a high-k capping layer on the high-k dielectric layer, an n-metal layer on the high-k capping layer and an n-metal capping layer on the n-metal layer. The n-metal layer having an aluminum rich interface adjacent the high-k capping layer.

公开(公告)号：US10014185B1

公开(公告)日：2018-07-03

申请号：US15446573

申请日：2017-03-01

Applicant: Applied Materials, Inc.

Inventor： Liqi Wu ,  Wenyu Zhang ,  Shih Chung Chen ,  Wei V. Tang ,  Leung Kway Lee ,  Xinming Zhang ,  Paul F. Ma

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/764

CPC classification number: H01L21/31122 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/32135 ,  H01L21/764

Abstract: Processing methods comprising oxidizing a metal nitride film to form a metal oxynitride layer and etching the metal oxynitride layer with a metal halide etchant. The metal halide etchant can be, for example, WCl5, WOCl4 or TaCl5. Methods of filling a trench with a seam-free gapfill are also described. A metal nitride film is deposited in the trench to form a seam and pinch-off an opening of the trench. The pinched-off opening is subjected to a directional oxidizing plasma and a metal halide etchant to open the pinched-off top and allow access to the seam.