公开(公告)号：US06245663B1

公开(公告)日：2001-06-12

申请号：US09163967

申请日：1998-09-30

Applicant: Bin Zhao ,  Maureen R. Brongo

Inventor： Bin Zhao ,  Maureen R. Brongo

IPC: H01L214763

CPC classification number: H01L21/76834 ,  H01L21/76807 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and structures are disclosed for advanced interconnects in sub-micron and sub-half-micron integrated circuit devices fabricated using a single damascene process. a dielectric etch-stop layer (e.g., silicon nitride) is deposited subsequent to rather than prior to CMP processing of the previous metallization layer (e.g., the conductive plug). This scheme effectively eliminates the effect of CMP-induced erosion on the etch-stop layer and therefore allows an extremely thin etch stop to be used. Moreover, a high etch-selectivity can be obtained for the trench etch, and all etch-stop material is removed from beneath the interconnect metal, thereby reducing parasitic effects. A patterned dielectric layer is used as a metal cap in place of the standard blanket silicon nitride layer, thus preventing the formation of blisters and bubbles associated with trapped moisture and gasses, and reducing interconnect capacitance.

Abstract translation: 公开了使用单个镶嵌工艺制造的亚微米级和次级半微米集成电路器件中的高级互连的方法和结构。 在先前的金属化层（例如，导电插头）的CMP处理之前而不是之前沉积介电蚀刻停止层（例如，氮化硅）。 该方案有效地消除了CMP腐蚀对蚀刻停止层的影响，因此允许使用极薄的蚀刻停止。 此外，可以获得沟槽蚀刻的高蚀刻选择性，并且从互连金属下方去除所有蚀刻停止材料，从而减少寄生效应。 图案化的介电层用作代替标准覆盖氮化硅层的金属盖，从而防止与被捕获的湿气和气体相关联的起泡和气泡的形成，并减少互连电容。

公开(公告)号：US6037664A

公开(公告)日：2000-03-14

申请号：US52215

申请日：1998-03-31

Applicant: Bin Zhao ,  Prahalad K. Vasudev ,  Ronald S. Horwath ,  Thomas E. Seidel ,  Peter M. Zeitzoff

Inventor： Bin Zhao ,  Prahalad K. Vasudev ,  Ronald S. Horwath ,  Thomas E. Seidel ,  Peter M. Zeitzoff

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48

CPC classification number: H01L21/76849 ,  H01L21/7681 ,  H01L21/76843 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10S438/902

Abstract: A technique for fabricating a dual damascene interconnect structure using a low dielectric constant material as a dielectric layer or layers. A low dielectric constant (low-.epsilon.) dielectric material is used to form an inter-level dielectric (ILD) layer between metallization layers and in which via and trench openings are formed in the low-.epsilon. ILD. The dual damascene technique allows for both the via and trench openings to be filled at the same time.

Abstract translation: 一种使用低介电常数材料作为电介质层或多层制造双镶嵌互连结构的技术。 使用低介电常数（低ε）电介质材料在金属化层之间形成层间介电层（ILD）层，其中在低εILD中形成通孔和沟槽开口。 双镶嵌技术允许通孔和沟槽开口同时被填充。

公开(公告)号：US5891513A

公开(公告)日：1999-04-06

申请号：US587262

申请日：1996-01-16

Applicant: Valery M. Dubin ,  Yosef Shacham-Diamand ,  Chiu H. Ting ,  Bin Zhao ,  Prahalad K. Vasudev

Inventor： Valery M. Dubin ,  Yosef Shacham-Diamand ,  Chiu H. Ting ,  Bin Zhao ,  Prahalad K. Vasudev

IPC: C23C18/16 ,  H01L21/288 ,  H01L21/768 ,  H01L23/532 ,  H05K3/04 ,  H05K3/38 ,  H05K3/42 ,  H05K3/46 ,  B05D5/12

CPC classification number: H01L21/76843 ,  C23C18/1603 ,  C23C18/1651 ,  C23C18/1689 ,  C23C18/1831 ,  C23C18/1879 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76807 ,  H01L21/76874 ,  H01L21/76877 ,  H01L23/53238 ,  H05K3/388 ,  H05K3/465 ,  H01L2924/0002 ,  H05K2201/09563 ,  H05K2203/072 ,  H05K2203/0733 ,  H05K3/045 ,  H05K3/422 ,  H05K3/4661 ,  Y10S977/892

Abstract: A method of utilizing electroless copper deposition to form interconnects on a semiconductor wafer. Once a via or a trench is formed in a dielectric layer, a titanium nitride (TiN) or tantalum (Ta) barrier layer is blanket deposited. Then, a contact displacement technique is used to form a thin activation seed layer of copper on the barrier layer. An electroless deposition technique is then used to auto-catalytically deposit copper on the activated barrier layer. The electroless copper deposition continues until the via/trench is filled. Subsequently, the surface is polished by an application of chemical-mechanical polishing (CMP) to remove excess copper and barrier material from the surface, so that the only copper and barrier material remaining are in the via/trench openings. Then an overlying silicon nitride (SiN) layer is formed above the exposed copper in order to form a dielectric barrier layer. The copper interconnect is fully encapsulated from the adjacent material by the TiN (or Ta) and the SiN layers.

Abstract translation: 一种利用无电铜沉积在半导体晶片上形成互连的方法。 一旦在电介质层中形成通孔或沟槽，则氮化钛（TiN）或钽（Ta）阻挡层被覆盖沉积。 然后，使用接触位移技术在阻挡层上形成铜的薄的活化种子层。 然后使用无电沉积技术在活化的阻挡层上自动催化沉积铜。 继续进行化学镀铜沉积，直到通孔/沟槽被填充。 随后，通过施加化学机械抛光（CMP）来抛光表面以从表面去除多余的铜和阻挡材料，使得剩余的唯一的铜和阻挡材料在通孔/沟槽开口中。 然后，在暴露的铜上方形成覆盖氮化硅（SiN）层，以形成电介质阻挡层。 铜互连通过TiN（或Ta）和SiN层从相邻材料完全封装。

公开(公告)号：US5830805A

公开(公告)日：1998-11-03

申请号：US751631

申请日：1996-11-18

Applicant: Yosi Shacham-Diamand ,  Valery M. Dubin ,  Chiu H. Ting ,  Bin Zhao ,  Prahalad K. Vasudev

Inventor： Yosi Shacham-Diamand ,  Valery M. Dubin ,  Chiu H. Ting ,  Bin Zhao ,  Prahalad K. Vasudev

IPC: C23C18/16 ,  H01L21/288 ,  H01L21/44

CPC classification number: C23C18/1683 ,  H01L21/288 ,  C23C18/1619 ,  Y10S438/908 ,  Y10S438/913

Abstract: An electroless deposition apparatus and a method of electroless deposition that uses a single process chamber for performing multiple processes by moving through the process chamber a variety of fluids one at a time in a sequential order.

Abstract translation: 一种无电沉积装置和无电沉积方法，其使用单个处理室通过以顺序顺序一次一个地通过处理室移动各种流体来执行多个处理。

公开(公告)号：US10097925B2

公开(公告)日：2018-10-09

申请号：US15417208

申请日：2017-01-26

Applicant: Xun Di ,  Lipeng Ma ,  Ping Liang ,  Bin Zhao ,  Xudong Yan

Inventor： Xun Di ,  Lipeng Ma ,  Ping Liang ,  Bin Zhao ,  Xudong Yan

IPC: H04R7/12 ,  B32B3/28 ,  B32B5/12 ,  B32B37/06 ,  B32B37/10 ,  B32B38/18 ,  H04R31/00 ,  B29C70/00

Abstract: The present disclosure disclose a diaphragm dome, the diaphragm dome includes a first carbon fiber layer and a second carbon fiber layer which are alternatively arranged by stacking, the first carbon fiber layer and the second carbon fiber layer are respectively a single-layer structure formed by an one-way extended carbon fiber bundle, an extending direction of the carbon fiber bundle of the first carbon fiber layer is perpendicular to an extending direction of the carbon fiber bundle of the second carbon fiber layer, and a thickness difference exists between the first carbon fiber layer and the second carbon fiber layer. In the diaphragm dome provided by the present disclosure, the material has larger specific strength, thus can reduce the thickness of the diaphragm dome, the carbon fiber layers of the diaphragm dome are well adhered, which is not readily layered, and has good water resistance.

公开(公告)号：US09917756B2

公开(公告)日：2018-03-13

申请号：US14500968

申请日：2014-09-29

Applicant: Bin Zhao ,  Jonathan Li

Inventor： Bin Zhao ,  Jonathan Li

IPC: H04M3/56 ,  H04M3/432 ,  H04L12/26 ,  H04W4/16 ,  H04L29/06 ,  H04L12/18 ,  H04L12/24 ,  H04L12/721 ,  H04L12/925 ,  H04M3/22 ,  H04M7/00 ,  H04L12/58 ,  H04L12/841 ,  H04M1/253 ,  H04M1/725

CPC classification number: H04L43/0864 ,  H04L12/18 ,  H04L12/1827 ,  H04L12/1831 ,  H04L41/5038 ,  H04L43/045 ,  H04L43/062 ,  H04L43/0852 ,  H04L43/10 ,  H04L43/50 ,  H04L45/123 ,  H04L47/283 ,  H04L47/722 ,  H04L51/34 ,  H04L65/1066 ,  H04L65/4038 ,  H04M1/2535 ,  H04M1/72547 ,  H04M3/2236 ,  H04M3/432 ,  H04M3/563 ,  H04M3/565 ,  H04M7/0084 ,  H04M2250/62 ,  H04M2250/74 ,  H04W4/16

Abstract: Systems and methods for a readiness dialog box for a call over network (CON) are provided. In some embodiments, the readiness dialog box is presented to the callers prior to the onset of the call. It presents the other participant's and their status. For example, it may indicate which participants are online, but not yet ready, those who are ready, and those not available. It also enables the caller to send messages (both preconfigured and customized) to the other participants. Once sufficient participants have joined, the call may start. Sufficiency of participants could include a quorum of individuals, may require that specific participants are ready, everyone is ready, or may be time dependent. The participant requirements may be configured by the individual setting up the call based upon call type.

公开(公告)号：US20170048600A1

公开(公告)日：2017-02-16

申请号：US15082304

申请日：2016-03-28

Applicant: Xiaofeng Pu ,  Qun Xiang ,  Xudong Yan ,  Bin Zhao ,  Sheng Ye

Inventor： Xiaofeng Pu ,  Qun Xiang ,  Xudong Yan ,  Bin Zhao ,  Sheng Ye

IPC: H04R1/02 ,  H04R1/32

CPC classification number: H04R1/023 ,  H04R1/2811 ,  H04R31/00 ,  H04R2499/11

Abstract: A sound generating device is provided in the present disclosure. The sound generating device includes a shell providing a receiving cavity, a sound generating body received in the receiving cavity and assembled to the shell, sound absorbing material filled in the receiving cavity, and an isolating member attached on the sound generating body. The sound generating body includes at least one air hole, and the isolating member covers the at least one air hole, the isolating member is configured for isolating the sound absorbing material from entering the sound generating body. The present disclosure further provides a method for making a sound generating device.

Abstract translation: 本发明提供一种发声装置。 声音发生装置包括提供接收腔的外壳，容纳在接收腔中并组装到外壳上的声音发生体，填充在接收腔中的吸声材料以及附着在发声体上的隔离构件。 发声体包括至少一个气孔，隔离构件覆盖至少一个气孔，该隔离构件用于隔离吸音材料以进入发声体。 本公开还提供了一种用于制造声音产生装置的方法。

公开(公告)号：US20150381440A1

公开(公告)日：2015-12-31

申请号：US14500954

申请日：2014-09-29

Applicant: Bin Zhao ,  Jonathan Li

Inventor： Bin Zhao ,  Jonathan Li

IPC: H04L12/26 ,  H04L29/06 ,  H04L29/08

CPC classification number: H04L43/0864 ,  H04L12/18 ,  H04L12/1827 ,  H04L12/1831 ,  H04L41/5038 ,  H04L43/045 ,  H04L43/062 ,  H04L43/0852 ,  H04L43/10 ,  H04L43/50 ,  H04L45/123 ,  H04L47/283 ,  H04L47/722 ,  H04L51/34 ,  H04L65/1066 ,  H04L65/4038 ,  H04M1/2535 ,  H04M1/72547 ,  H04M3/2236 ,  H04M3/432 ,  H04M3/563 ,  H04M3/565 ,  H04M7/0084 ,  H04M2250/62 ,  H04M2250/74 ,  H04W4/16

Abstract: Systems and methods for visualization of a call over network (CON) are provided. In some embodiments, the visualization of a call over network may be effectuated by three functionalities: a readiness dialog box that enables the facilitation of the call, the inclusion of visualization and participant features within the call, and a visualized summary after the call. The readiness dialog box is presented to the callers prior to the onset of the call. It presents the other participant's and their status. It also enables the caller to send messages (both preconfigured and customized) to the other participants. Once sufficient participants have joined, the call may start. Once the call starts, it may be visualized by displaying on a single or multi channels, which caller is speaking, and any additional indications they may be providing. The caller may likewise be provided a set of participant features that allow the user to interact with the call. After the call concludes, a visualized summary of the call can then be generated. The summary includes any of the recording, transcriptions, scenario information, speaker information and the duration each speaker was talking, etc.

Abstract translation: 提供了通过网络（CON）可视化的系统和方法。 在一些实施例中，通过网络的呼叫的可视化可以通过三个功能来实现：能够促进呼叫，在呼叫中包括可视化和参与者特征的准备对话框以及呼叫之后的可视化摘要。 就绪对话框在呼叫开始之前呈现给呼叫者。 它提供了另一个参与者及其状态。 它还使呼叫者能够向其他参与者发送消息（预配置和自定义）。 一旦有足够的参与者加入，呼叫可能开始。 一旦呼叫开始，它可以通过在单个或多个频道上显示，哪个呼叫者在说话，以及可能提供的任何附加指示。 呼叫者同样可以被提供一组允许用户与呼叫交互的参与者特征。 呼叫结束后，可以生成可视化的通话摘要。 摘要包括录音，转录，情景信息，演讲者信息以及每个发言者在说话的持续时间等。

公开(公告)号：US08599915B2

公开(公告)日：2013-12-03

申请号：US13025201

申请日：2011-02-11

Applicant: Bin Zhao ,  Jack W. Cornish ,  Andrew M. Kameya ,  Weizhuang W. Xin

Inventor： Bin Zhao ,  Jack W. Cornish ,  Andrew M. Kameya ,  Weizhuang W. Xin

IPC: H03K7/08 ,  H03K9/08

CPC classification number: H05B33/0827 ,  G09G3/3406 ,  G09G2320/064

Abstract: First information is received at a first pulse width modulation (PWM) module responsive to a chip select signal being asserted at a chip select input of a communication bus of the first PWM module during a first time. The first information is latched at a control register of the first PWM module in response to a first logic transition of the chip select signal. A first PWM signal is provided at a first output of the first PWM module beginning a predetermined amount of time after the first logic transition of the chip select signal, the first PWM signal generated by the first PWM module based upon the first information.

Abstract translation: 响应于在第一时间期间在第一PWM模块的通信总线的芯片选择输入端被断言的芯片选择信号，第一脉冲宽度调制（PWM）模块接收第一信息。 响应于芯片选择信号的第一逻辑转换，第一信息被锁存在第一PWM模块的控制寄存器中。 第一PWM信号设置在第一PWM模块的第一输出处，在芯片选择信号的第一逻辑转换，基于第一信息由第一PWM模块产生的第一PWM信号之后开始预定的时间量。

公开(公告)号：US20130070369A1

公开(公告)日：2013-03-21

申请号：US13238026

申请日：2011-09-21

Applicant: Shen kuang sidney CHOU ,  Chi hung Yuen ,  Yan bin Wang ,  Shu ming Zhang ,  Bin Zhao ,  Ming liang Lin

Inventor： Shen kuang sidney CHOU ,  Chi hung Yuen ,  Yan bin Wang ,  Shu ming Zhang ,  Bin Zhao ,  Ming liang Lin

IPC: G11B5/48 ,  G11B5/127 ,  G11B17/02

CPC classification number: G11B5/4853 ,  G11B5/486 ,  Y10T29/4903

Abstract: A suspension includes a flexure and a plurality of electrical traces formed on the flexure. Each electrical trace has a trace body and a bonding pad arranged for connecting with a slider, and the bonding pad is a free end before connecting with the slider and is capable of bending to the trace body flexibly, and the bonding pad includes a trace body layer and a solder layer formed on the trace body layer, thereby the bonding pads of the electrical traces connecting with the slider by reflowing the solder layer. The present invention uses no extra solder balls, so as to reduce the manufacturing cost and the corresponding apparatus cost. The invention also discloses a manufacturing method of a suspension, and a connecting method for a suspension and a slider.

Abstract translation: 悬架包括挠曲件和形成在挠曲件上的多个电迹线。 每个电迹线具有迹线体和布置成与滑块连接的接合焊盘，并且接合焊盘在与滑块连接之前是自由端，并且能够柔性地弯曲到迹线体，并且焊盘包括迹线体 层和形成在迹体层上的焊料层，由此通过回流焊料层而与滑块连接的电迹线的焊盘。 本发明不使用额外的焊球，从而降低制造成本和相应的设备成本。 本发明还公开了一种悬架的制造方法以及悬架和滑块的连接方法。