公开(公告)号：US5268069A

公开(公告)日：1993-12-07

申请号：US895493

申请日：1992-06-08

申请人： Jonathan D. Chapple-Sokol ,  Richard A. Conti ,  David E. Kotecki ,  Andrew H. Simon ,  Manu Tejwani

发明人： Jonathan D. Chapple-Sokol ,  Richard A. Conti ,  David E. Kotecki ,  Andrew H. Simon ,  Manu Tejwani

IPC分类号： H01L21/306 ,  H01L21/311 ,  H01L21/00

CPC分类号： H01L21/02046 ,  H01L21/02049 ,  H01L21/31116

摘要： Anhydrous ammonium fluoride is used as a safe source of hydrogen fluoride for etching native or other silicon dioxide layers from silicon substrates. Heating the anhydrous ammonium fluoride above its sublimation temperature results in the generation of hydrogen fluoride gas which etches the silicon dioxide. Controlled amounts of water vapor are used during the etch reaction to ensure complete etching of the thin oxide layers down to within hundredths of a monolayer and to achieve precise etch rate control.

摘要翻译： 无水氟化铵用作氟化氢的安全源，用于从硅衬底蚀刻天然或其他二氧化硅层。 在其升华温度以上加热无水氟化铵导致产生二氧化硅蚀刻的氟化氢气体。 在蚀刻反应期间使用受控量的水蒸气，以确保将薄氧化物层完全蚀刻到百分之几以下的单层并且实现精确的蚀刻速率控制。

公开(公告)号：US5134963A

公开(公告)日：1992-08-04

申请号：US784160

申请日：1991-10-28

申请人： Steven G. Barbee ,  Jonathan D. Chapple-Sokol ,  Richard A. Conti ,  David E. Kotecki

发明人： Steven G. Barbee ,  Jonathan D. Chapple-Sokol ,  Richard A. Conti ,  David E. Kotecki

IPC分类号： C23C16/52 ,  C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  H01L21/205

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/45504 ,  C30B25/14

摘要： An injector with a convex wall surface facing the susceptor directs vapor toward a wafer held by a susceptor producing a generally laminar flow across the surface of the wafer that in combination with the convex wall surface prevents formation of recirculation cells in the region between the wafer and the injector.

公开(公告)号：US20090243031A1

公开(公告)日：2009-10-01

申请号：US12055682

申请日：2008-03-26

申请人： Wesley C. Natzle ,  Renee T. Mo ,  Rashmi Jha ,  Kathryn T. Schonenberg ,  Richard A. Conti

发明人： Wesley C. Natzle ,  Renee T. Mo ,  Rashmi Jha ,  Kathryn T. Schonenberg ,  Richard A. Conti

IPC分类号： H01L29/49 ,  H01L21/441

CPC分类号： H01L21/76224 ,  H01L21/28123 ,  H01L29/517

摘要： In one embodiment, the present invention provides a method of fabricating a semiconducting device that includes providing a substrate including at least one semiconducting region and at least one oxygen source region; forming an oxygen barrier material atop portions of an upper surface of the at least one oxygen region; forming a high-k gate dielectric on the substrate including the at least one semiconducting region, wherein oxygen barrier material separates the high-k gate dielectric from the at least one oxygen source material; and forming a gate conductor atop the high-k gate dielectric.

摘要翻译： 在一个实施例中，本发明提供一种制造半导体器件的方法，其包括提供包括至少一个半导体区域和至少一个氧源区域的衬底; 在所述至少一个氧区的上表面的部分顶部形成氧阻隔材料; 在包括所述至少一个半导体区域的衬底上形成高k栅极电介质，其中氧阻挡材料将所述高k栅极电介质与所述至少一个氧源材料分离; 并在高k栅极电介质的顶部形成栅极导体。

公开(公告)号：US07485573B2

公开(公告)日：2009-02-03

申请号：US11356027

申请日：2006-02-17

申请人： Marie Angelopoulos ,  Katherina E. Babich ,  Sean D. Burns ,  Richard A. Conti ,  Allen H. Gabor ,  Scott D. Halle ,  Arpan P. Mahorowala ,  Dirk Pfeiffer

发明人： Marie Angelopoulos ,  Katherina E. Babich ,  Sean D. Burns ,  Richard A. Conti ,  Allen H. Gabor ,  Scott D. Halle ,  Arpan P. Mahorowala ,  Dirk Pfeiffer

IPC分类号： H01L21/4763

CPC分类号： G03F7/091 ,  Y10S438/952

摘要： A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.

摘要翻译： 一种光刻结构，主要由以下部分组成：设置在基板上的有机抗反射材料; 气相沉积的RCHX材料，其中R是选自Si，Ge，B，Sn，Fe和Ti中的一种或多种元素，并且其中X不存在或者是选自以下的一种或多种元素： O，N，S和F; 以及设置在RCHX材料上的光致抗蚀剂材料。 本发明还涉及制造光刻结构的方法，并且使用该结构来图案化衬底。

公开(公告)号：US07084079B2

公开(公告)日：2006-08-01

申请号：US10299357

申请日：2002-11-18

申请人： Richard A. Conti ,  Daniel C. Edelstein ,  Gill Yong Lee

发明人： Richard A. Conti ,  Daniel C. Edelstein ,  Gill Yong Lee

IPC分类号： H01L21/469

CPC分类号： H01L21/02271 ,  C23C16/401 ,  H01L21/02112 ,  H01L21/02129 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/3122 ,  H01L21/31604 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/31633 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is described for forming a low-k dielectric film, in particular, a pre-metal dielectric (PMD) on a semiconductor wafer which has good gap-filling characteristics. The method uses a thermal sub-atmospheric CVD process that includes a carbon-containing organometallic precusor such as TMCTS or OMCTS, an ozone-containing gas, and a source of dopants for gettering alkali elements and for lowering the reflow temperature of the dielectric while attaining the desired low-k and gap-filling properties of the dielectric film. Phosphorous is a preferred dopant for gettering alkali elements such as sodium. Additional dopants for lowering the reflow temperature include, but are not limited to boron, germanium, arsenic, fluorine or combinations thereof.

公开(公告)号：US06740539B2

公开(公告)日：2004-05-25

申请号：US10366149

申请日：2003-02-13

申请人： Richard A. Conti ,  Prakash Chimanlal Dev ,  David M. Dobuzinsky ,  Daniel C. Edelstein ,  Gill Y. Lee ,  Kia-Seng Low ,  Padraic C. Shafer ,  Alexander Simpson ,  Peter Wrschka

发明人： Richard A. Conti ,  Prakash Chimanlal Dev ,  David M. Dobuzinsky ,  Daniel C. Edelstein ,  Gill Y. Lee ,  Kia-Seng Low ,  Padraic C. Shafer ,  Alexander Simpson ,  Peter Wrschka

IPC分类号： H01L5140

CPC分类号： H01L21/28185 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/28194 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure and method for an insulator layer having carbon-graded layers above a substrate is disclosed, wherein the concentration of carbon increases in each successive carbon-graded layer above the substrate. The insulator comprises a low-k dielectric having a dielectric constant less than 3.3. The carbon-graded layer increases adhesion between the substrate and the insulator and between the insulator and the conductor layer. The structure may also include stabilization interfaces between the carbon-graded layers. More specifically, the carbon-graded layers include a first layer adjacent the substrate having a carbon content between about 5% and 20%, a second layer above the first layer having a carbon content between about 10% and 30%, and a third layer above the second layer having a carbon content between about 20% and 40%.

摘要翻译： 公开了一种在衬底上方具有碳分级层的绝缘体层的结构和方法，其中在衬底上方的每个连续的碳分级层中碳的浓度增加。 绝缘体包括介电常数小于3.3的低k电介质。 碳分级层增加了衬底和绝缘体之间以及绝缘体和导体层之间的粘合性。 该结构还可以包括碳分级层之间的稳定界面。 更具体地，碳分级层包括邻近基底的第一层，其碳含量在约5％至20％之间，第一层上方的碳含量在约10％至30％之间，第三层 在第二层上方具有约20％至40％的碳含量。

公开(公告)号：US06500772B2

公开(公告)日：2002-12-31

申请号：US09757072

申请日：2001-01-08

申请人： Ashima B. Chakravarti ,  Richard A. Conti ,  Chester Dziobkowski ,  Thomas Ivers ,  Paul Jamison ,  Frank Liucci

发明人： Ashima B. Chakravarti ,  Richard A. Conti ,  Chester Dziobkowski ,  Thomas Ivers ,  Paul Jamison ,  Frank Liucci

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C23C16/30 ,  H01L21/02167 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/3185

摘要： A method of depositing a film on a substrate, comprising placing the substrate in the presence of plasma energy, and contacting the substrate with a reactive gas component comprising a compound of the formula (R—NH)4−nSiXn, wherein R is an alkyl group, n is 1, 2, or 3, and X is selected from hydrogen or the halogens. The reactive gas composition may further comprise an oxidizer and/or a reducing agent.

摘要翻译： 一种在衬底上沉积膜的方法，包括在存在等离子体能量的情况下放置衬底，并使衬底与包含式（R-NH）4-nSiXn的化合物的反应性气体组分接触，其中R是烷基 基团，n为1,2或3，并且X选自氢或卤素。 反应性气体组合物还可以包含氧化剂和/或还原剂。

公开(公告)号：US06486015B1

公开(公告)日：2002-11-26

申请号：US09557363

申请日：2000-04-25

申请人： Nirmal Chaudhary ,  Richard A. Conti

发明人： Nirmal Chaudhary ,  Richard A. Conti

IPC分类号： H01L218238

CPC分类号： H01L21/02271 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/31116 ,  H01L21/76834 ,  H01L21/76897 ,  H01L27/10855 ,  H01L27/10888

摘要： Reactive ion etch (RIE) selectivity during etching of a feature nearby embedded structure is improved by using a silicon oxynitride layer formed with carbonization throughout layer.

摘要翻译： 通过使用在整个层上形成碳氧化的氮氧化硅层来改善蚀刻邻近嵌入结构的特征期间的反应离子蚀刻（RIE）选择性。

公开(公告)号：US06274440B1

公开(公告)日：2001-08-14

申请号：US09282134

申请日：1999-03-31

申请人： Kenneth C. Arndt ,  Axel C. Brintzinger ,  Richard A. Conti ,  Donna R. Cote ,  Chandrasekhar Narayan ,  Ravikumar Ramachandran ,  Thomas S. Rupp ,  Senthil K. Srinivasan

发明人： Kenneth C. Arndt ,  Axel C. Brintzinger ,  Richard A. Conti ,  Donna R. Cote ,  Chandrasekhar Narayan ,  Ravikumar Ramachandran ,  Thomas S. Rupp ,  Senthil K. Srinivasan

IPC分类号： H01L21336

CPC分类号： H01L23/5258 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A structure and method for making a cavity fuse over a gate conductor stack. The method includes providing a semiconductor substrate having a gate conductor stack over a shallow trench isolation region, forming oxide layers on the substrate about the gate conductor stack, etching electrical contact holes through the oxide layers to the substrate, filling the electrical contact holes with a first conductive material to establish electrical contact with the gate conductor stack, etching a pattern in an uppermost oxide layer of the oxide layers, depositing a conductive layer of a second conductive material over the oxide layers and the electrical contacts, planarizing the conductive layer whereby the conductive material remains only in the pattern, anisotropically etching the oxide layers to form at least one etching hole through the oxide layers to the shallow trench isolation region, and isotropically etching at least a portion of the oxide layers about the etching hole, whereby a cavity is formed beneath at least a portion of the conductive layer pattern, the gate conductor stack comprising a fuse.

摘要翻译： 用于在栅极导体堆叠上形成腔体熔断器的结构和方法。 该方法包括提供在浅沟槽隔离区域上具有栅极导体堆叠的半导体衬底，在栅极导体堆叠周围形成衬底周围的氧化物层，蚀刻通过氧化物层到衬底的电接触孔， 第一导电材料以与栅极导体堆叠建立电接触，蚀刻氧化物层的最上面的氧化物层中的图案，在氧化物层和电触点上沉积第二导电材料的导电层，平坦化导电层，由此 导电材料仅保留在图案中，各向异性地蚀刻氧化物层以形成通过氧化物层到浅沟槽隔离区域的至少一个蚀刻孔，并且在蚀刻孔周围各向同性蚀刻至少一部分氧化层， 形成在导电层图案的至少一部分之下，g 包括保险丝的导体堆叠。

公开(公告)号：US06232222B1

公开(公告)日：2001-05-15

申请号：US09395418

申请日：1999-09-14

申请人： Michael Armacost ,  Richard A. Conti ,  Jeffrey P. Gambino ,  Jeremy K. Stephens

发明人： Michael Armacost ,  Richard A. Conti ,  Jeffrey P. Gambino ,  Jeremy K. Stephens

IPC分类号： H01L214763

CPC分类号： H01L21/76897 ,  H01L21/31144 ,  H01L27/10873 ,  H01L27/10894

摘要： A method of forming a semiconductor structure may include forming a semiconductor substrate having an array region and a support region, forming a semiconductor substrate and a gate stack over the support region of the substrate and applying a critical mask over the support region and the array region. The critical mask may have a first opening at an area corresponding to the array region and a second opening at an area corresponding to the support region. Contact holes may be formed in a glass layer at areas corresponding to the first and second opening. After removing the critical mask, a first blockout mask may be applied over the array region and a first conductive type dopant may be added to exposed polysilicon corresponding to openings of the blockout mask or gate contacts may be formed.

摘要翻译： 形成半导体结构的方法可以包括形成具有阵列区域和支撑区域的半导体衬底，在衬底的支撑区域上形成半导体衬底和栅叠层，并在衬底区域和阵列区域上施加临界掩模 。 临界掩模可以在对应于阵列区域的区域处具有第一开口，并且在对应于支撑区域的区域处具有第二开口。 可以在对应于第一和第二开口的区域的玻璃层中形成接触孔。 在去除临界掩模之后，可以在阵列区域上施加第一堵塞掩模，并且可以形成第一导电型掺杂剂，以对应于封闭掩模的开口或栅极触点形成对应于暴露的多晶硅。