Surface modified copper alloys
    37.
    发明授权
    Surface modified copper alloys 失效
    表面改性铜合金

    公开(公告)号:US5096508A

    公开(公告)日:1992-03-17

    申请号:US563766

    申请日:1990-07-27

    CPC classification number: C23C14/48 C23C8/80 Y10T428/12882

    Abstract: A composite copper alloy having a modified surface is provided. An element or combination of elements both soluble in copper and reactive with nitrogen are cast with copper or a copper alloy forming a solid state solution. The alloy is reacted with a nitride former to modify the surface. A continuous surface film is formed by heating in a nitrogen containing gas. A dispersion of nitride precipitate in a copper matrix is formed by implanting nitrogen ions.

    Abstract translation: 提供具有改性表面的复合铜合金。 可溶于铜和与氮反应的元素或组合的元素或铜组合形成固态溶液。 该合金与氮化物形成剂反应以改变表面。 通过在含氮气体中加热形成连续的表面膜。 通过注入氮离子形成氮化物沉淀物在铜基质中的分散体。

    Hermetically sealed package
    39.
    发明授权
    Hermetically sealed package 失效
    密封包装

    公开(公告)号:US4821151A

    公开(公告)日:1989-04-11

    申请号:US811911

    申请日:1985-12-20

    Abstract: A hermetically sealed package adapted to house a plurality of semiconductor devices. The package include a multi-layer circuit device formed of a plurality of ceramic substrates and conductive circuit patterns disposed therebetween. A ceramic cover having at least one cavity adapted for receiving a semiconductor die is sealed to the multi-layer circuit device. Electrical leads are connected to the semiconductor device and extend outward from the package for connection to the conductive circuit pattern within the multi-layer circuit.

    Abstract translation: 一种适于容纳多个半导体器件的气密密封封装。 封装包括由多个陶瓷基板和设置在其间的导电电路图形成的多层电路器件。 具有适于接收半导体管芯的至少一个腔的陶瓷盖被密封到多层电路器件。 电引线连接到半导体器件并从封装向外延伸以连接到多层电路内的导电电路图案。

    Graded sealing systems for semiconductor package
    40.
    发明授权
    Graded sealing systems for semiconductor package 失效
    半导体封装分级密封系统

    公开(公告)号:US4704626A

    公开(公告)日:1987-11-03

    申请号:US752872

    申请日:1985-07-08

    Abstract: A graded seal assembly adapted for hermetically sealing a semiconductor package is disclosed. First and second members having first and second coefficients of thermal expansion respectively are provided. A leadframe is disposed between the first and second members. A first sealing glass is bonded to opposite surfaces of the leadframe and is disposed between the leadframe and the first member for sealing the leadframe to the first member. The second sealing glass is bonded to the second member. The second sealing glass has a third CTE which has a mismatch of less than about 5.times.10.sup.-7 in/in/.degree.C. with said second member. A graded interface zone having stratified layers fuses the first and second sealing glasses. Each of the layers in the zone has a coefficient of thermal expansion which is mismatched less than about 5.times.10.sup.-7 in/in/.degree.C. with an adjacent layer to absorb thermal stress formed by exposure of the semiconductor package to thermal cycling.

    Abstract translation: 公开了一种适于气密密封半导体封装的分级密封组件。 提供具有第一和第二热膨胀系数的第一和第二构件。 引线框设置在第一和第二构件之间。 第一密封玻璃结合到引线框架的相对表面,并且设置在引线框架和第一构件之间,用于将引线框架密封到第一构件。 第二密封玻璃结合到第二构件。 第二密封玻璃具有与所述第二构件不匹配的小于约5×10 -7 in / in /℃的第三CTE。 具有分层的分级界面区使第一和第二密封眼镜融合。 区域中的每个层具有小于约5×10 -7 in / in /℃的失配系数,具有相邻层以吸收由半导体封装暴露于热循环形成的热应力。

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