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公开(公告)号：US10438798B2
公开(公告)日：2019-10-08
申请号：US15862678
申请日：2018-01-05
IPC分类号： H01L21/18 , H01L21/263 , H01L21/67
摘要： A device and method is described for producing an electrically conductive direct bond between a bonding side of a first substrate and a bonding side of a second substrate. A workspace is included that can be closed, gas-tight, against the environment and can be supplied with a vacuum. The workspace includes a) at least one plasma chamber for modifying at least one of the bonding sides and at least one bonding chamber for bonding the bonding sides, and/or b) at least one combined bonding/plasma chamber for modifying at least one of the bonding sides and for bonding the bonding sides.
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公开(公告)号：US20190217594A1
公开(公告)日：2019-07-18
申请号：US16358844
申请日：2019-03-20
CPC分类号： B32B38/1833 , B32B37/0076 , B32B37/10 , B32B37/18 , B32B38/1866 , B32B2457/14 , H01L21/187 , Y10T156/17
摘要： A method for bonding a contact surface of a first substrate to a contact surface of a second substrate comprising of the steps of: positioning the first substrate on a first receiving surface of a first receiving apparatus and positioning the second substrate on a second receiving surface of a second receiving apparatus; establishing contact of the contact surfaces at a bond initiation site; and bonding the first substrate to the second substrate along a bonding wave which is travelling from the bond initiation site to the side edges of the substrates, wherein the first substrate and/or the second substrate is/are deformed for alignment of the contact surfaces.
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公开(公告)号：US20190210350A1
公开(公告)日：2019-07-11
申请号：US16357746
申请日：2019-03-19
CPC分类号： B32B38/1833 , B32B37/0076 , B32B37/10 , B32B37/18 , B32B38/1866 , B32B2457/14 , H01L21/187 , Y10T156/17
摘要： A method for bonding a contact surface of a first substrate to a contact surface of a second substrate comprising of the steps of: positioning the first substrate on a first receiving surface of a first receiving apparatus and positioning the second substrate on a second receiving surface of a second receiving apparatus; establishing contact of the contact surfaces at a bond initiation site; and bonding the first substrate to the second substrate along a bonding wave which is travelling from the bond initiation site to the side edges of the substrates, wherein the first substrate and/or the second substrate is/are deformed for alignment of the contact surfaces.
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公开(公告)号：US20180366366A1
公开(公告)日：2018-12-20
申请号：US16108719
申请日：2018-08-22
发明人： Markus Wimplinger
IPC分类号： H01L21/762 , H01L21/20 , C23C14/48
摘要： A method for surface treatment of an at least primarily crystalline substrate surface of a substrate such that by amorphization of the substrate surface, an amorphous layer is formed at the substrate surface with a thickness d>0 nm of the amorphous layer. This invention also relates to a corresponding device for surface treatment of substrates.
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公开(公告)号：US10083854B2
公开(公告)日：2018-09-25
申请号：US15315900
申请日：2014-06-24
发明人： Markus Wimplinger
IPC分类号： H01L21/762 , C23C14/48
CPC分类号： H01L21/76251 , C23C14/48 , H01L21/2007
摘要： A method for surface treatment of an at least primarily crystalline substrate surface of a substrate such that by amorphization of the substrate surface, an amorphous layer is formed at the substrate surface with a thickness d>0 nm of the amorphous layer. This invention also relates to a corresponding device for surface treatment of substrates.
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公开(公告)号：US09911713B2
公开(公告)日：2018-03-06
申请号：US15441741
申请日：2017-02-24
发明人： Markus Wimplinger
CPC分类号： H01L24/83 , B81C3/001 , B81C2203/036 , H01L24/29 , H01L24/32 , H01L2224/29082 , H01L2224/291 , H01L2224/29105 , H01L2224/29111 , H01L2224/29116 , H01L2224/29117 , H01L2224/29118 , H01L2224/29123 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29157 , H01L2224/2916 , H01L2224/29166 , H01L2224/29169 , H01L2224/29171 , H01L2224/29184 , H01L2224/32145 , H01L2224/32507 , H01L2224/8302 , H01L2224/83022 , H01L2224/8381 , H01L2224/83894 , H01L2924/01003 , H01L2924/01005 , H01L2924/01011 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01034 , H01L2924/01037 , H01L2924/01038 , H01L2924/0105 , H01L2924/01052 , H01L2924/01055 , H01L2924/01056 , H01L2924/01322 , H01L2924/10251 , H01L2924/10252 , H01L2924/10253 , H01L2924/1026 , H01L2924/10271 , H01L2924/10272 , H01L2924/10323 , H01L2924/10328 , H01L2924/10329 , H01L2924/1033 , H01L2924/10331 , H01L2924/10332 , H01L2924/10333 , H01L2924/10334 , H01L2924/10335 , H01L2924/10336 , H01L2924/10346 , H01L2924/1037 , H01L2924/10371 , H01L2924/10372 , H01L2924/10373 , H01L2924/10375 , H01L2924/10376 , H01L2924/10377 , H01L2924/10821 , H01L2924/10823 , H01L2924/10831 , H01L2924/00 , H01L2924/00014 , H01L2924/01032 , H01L2924/01013 , H01L2924/01031 , H01L2924/0103
摘要： A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.
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公开(公告)号：US09899223B2
公开(公告)日：2018-02-20
申请号：US15021725
申请日：2013-09-25
IPC分类号： H01L21/18 , H01L21/263 , H01L21/67
CPC分类号： H01L21/187 , H01L21/263 , H01L21/67092
摘要： A device and method for producing an electrically conductive direct bond between a bonding side of a first substrate and a bonding side of a second substrate with the following features: a workspace that can be closed, gas-tight, against the environment and can be supplied with a vacuum, the workspace comprises: a) at least one plasma chamber for modifying at least one of the bonding sides and at least one bonding chamber for bonding the bonding sides, and/or b) at least one combined bonding/plasma chamber for modifying at least one of the bonding sides and for bonding the bonding sides.
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公开(公告)号：US20170229423A1
公开(公告)日：2017-08-10
申请号：US15499011
申请日：2017-04-27
IPC分类号： H01L23/00
CPC分类号： H01L24/83 , H01L21/0223 , H01L21/02255 , H01L21/187 , H01L21/2007 , H01L21/3105 , H01L21/76251 , H01L24/27 , H01L24/29 , H01L24/32 , H01L2224/27444 , H01L2224/278 , H01L2224/29188 , H01L2224/32145 , H01L2224/8309 , H01L2224/83896 , H01L2924/01013 , H01L2924/10252 , H01L2924/1032 , H01L2924/10328 , H01L2924/10329 , H01L2924/1033 , H01L2924/10331 , H01L2924/10332 , H01L2924/10333 , H01L2924/10334 , H01L2924/10335 , H01L2924/10336 , H01L2924/10346 , H01L2924/1082 , H01L2924/10821 , H01L2924/10823 , H01L2924/20106
摘要： This invention relates to a method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate with the following steps, especially the following sequence: forming a first reservoir in a surface layer on the first contact surface and a second reservoir in a surface layer on the second contact surface, the surface layers of the first and second contact surfaces being comprised of respective native oxide materials of one or more second educts respectively contained in reaction layers of the first and second substrates, partially filling the first and second reservoirs with one or more first educts; and reacting the first educts filled in the first reservoir with the second educts contained in the reaction layer of the second substrate to at least partially strengthen a permanent bond formed between the first and second contact surfaces.
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公开(公告)号：US20160111394A1
公开(公告)日：2016-04-21
申请号：US14976484
申请日：2015-12-21
IPC分类号： H01L23/00 , H01L21/762 , H01L21/18
CPC分类号： H01L24/83 , H01L21/187 , H01L21/2007 , H01L21/70 , H01L21/76251 , H01L24/80 , H01L2224/80907 , H01L2224/83009 , H01L2224/83894 , H01L2224/83907 , H01L2924/01001 , H01L2924/01007 , H01L2924/01008 , H01L2924/01018 , H01L2924/20102 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106
摘要： A method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate according to the following steps: forming a reservoir in a surface layer on the first contact surface, at least partially filling the reservoir with a first educt or a first group of educts, contacting the first contact surface with the second contact surface for formation of a prebond connection, and forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt with a second educt contained in a reaction layer of the second substrate.
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公开(公告)号：US11990463B2
公开(公告)日：2024-05-21
申请号：US17144655
申请日：2021-01-08
发明人： Markus Wimplinger
IPC分类号： H01L25/00 , H01L23/00 , H01L25/065 , H05K13/04
CPC分类号： H01L25/50 , H01L24/74 , H01L24/75 , H01L24/80 , H01L25/0652 , H05K13/0404 , H01L2224/80003 , H01L2224/80011 , H01L2224/80013 , H01L2224/80894
摘要： A method and device for bonding chips onto a substrate or onto further chips. The chips are bonded onto the substrate or the further chips by means of a direct bond using a bond head having a first surface configured to couple to a chip that is to be bonded, and a second surface fixed to and disposed opposite the first surface. A first spring element having a first spring constant and a second spring element having a second spring constant are coupled to the second surface, where the first spring constant is different from the second spring constant.
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