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    Thin film field effect transistor with gate dielectric made of organic material and method for fabricating the same
    32.
    发明授权
    Thin film field effect transistor with gate dielectric made of organic material and method for fabricating the same 有权
    具有由有机材料制成的栅极电介质的薄膜场效应晶体管及其制造方法

    公开(公告)号：US07326957B2

    公开(公告)日：2008-02-05

    申请号：US11134512

    申请日：2005-05-23

    申请人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Günter Schmid

    发明人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Günter Schmid

    IPC分类号： H01L29/08

    CPC分类号： H01L29/4908 ,  H01L51/0097 ,  H01L51/0516 ,  H01L51/0545

    摘要： The gate dielectric layer of a thin film field effect transistor is formed as a multilayer layer system having at least one self assembling molecular monolayer (SAM) and a dielectric polymer layer made of an insulating polymer. With comparatively small layer thicknesses of 10 to 50 nanometers, the multilayer gate dielectric layer ensures low leakage currents and enables failsafe operation of the thin film field effect transistor at low supply voltages of less than 5 volts. The gate dielectric layer is robust toward voltages of up to approximately 20 volts and permits the use of a multiplicity of different materials for realizing an underlying electrode.

    摘要翻译： 薄膜场效应晶体管的栅介质层形成为具有至少一个自组装分子单层（SAM）和由绝缘聚合物制成的电介质聚合物层的多层系统。 具有10至50纳米的相对较小的层厚度，多层栅极介质层确保低泄漏电流，并且能够在低于5伏特的低电源电压下实现薄膜场效应晶体管的故障安全操作。 栅极电介质层对于高达约20伏特的电压是鲁棒的，并且允许使用多种不同的材料来实现底层电极。

    Charge carrier modulation for color and brightness coordination in organic light-emitting diodes
    33.
    发明授权
    Charge carrier modulation for color and brightness coordination in organic light-emitting diodes 有权

    公开(公告)号：US09627641B2

    公开(公告)日：2017-04-18

    申请号：US13825891

    申请日：2011-09-20

    申请人： Günter Schmid ,  Dan Taroata

    发明人： Günter Schmid ,  Dan Taroata

    IPC分类号： H01L51/52 ,  H01L51/50 ,  H01L51/56

    CPC分类号： H01L51/5052 ,  H01L51/52 ,  H01L51/56

    摘要： The device for charge carrier modulation is a current-controlled component, which has semiconductor layers arranged on top of each other. The organic semiconductor layers arranged on top of each other are an electron transport layer, which is arranged between a first and a second hole transport layer, and/or a hole transport layer, which is arranged between a first and a second electron transport layer. The respective central layer is the modulation layer having a contact for a modulation voltage. By applying a modulation voltage, a modulation current flow is generated over the modulation layer. The modulation current flow influences the component current flow which flows from the first into the second hole or electron transport layer via the respective modulation layer.

    Radiation-emitting device
    36.
    发明授权
    Radiation-emitting device 有权
    辐射发射装置

    公开(公告)号：US08816329B2

    公开(公告)日：2014-08-26

    申请号：US13127231

    申请日：2009-10-15

    申请人： Ralf Krause ,  Günter Schmid ,  Stefan Seidel

    发明人： Ralf Krause ,  Günter Schmid ,  Stefan Seidel

    IPC分类号： H01L51/52

    CPC分类号： H01L51/00 ,  H01L51/0085 ,  H01L51/50 ,  H01L51/5016 ,  H01L51/5036 ,  H01L51/5088

    摘要： A radiation-emitting device for emitting electromagnetic radiation which is a mixture of at least three different partial radiations of a first, a second and a third wavelength range. The radiation-emitting device here comprises a substrate; a first electrode and a second electrode, at least one first layer sequence arranged between the first and second electrodes comprising: at least one first layer with a first fluorescent emitter, which emits radiation in the first wavelength range, at least one second layer with a first phosphorescent emitter, which emits radiation in the second wavelength range; at least one second layer sequence arranged between the first and second electrodes comprising: at least one first layer with a second fluorescent emitter, which emits radiation in the first wavelength range, at least one second layer with a second phosphorescent emitter, which emits radiation in the third wavelength range, and at least one interlayer, which is free of emitter material and is arranged between the first and the second layer sequences.

    摘要翻译： 一种用于发射作为第一，第二和第三波长范围的至少三个不同部分辐射的混合物的电磁辐射的辐射发射装置。 这里的辐射发射器件包括衬底; 第一电极和第二电极，布置在第一和第二电极之间的至少一个第一层序列，包括：具有第一荧光发射器的至少一个第一层，其发射第一波长范围的辐射，至少一个第二层， 第一磷光发射体，其在第二波长范围内发射辐射; 布置在第一和第二电极之间的至少一个第二层序列包括：具有第二荧光发射器的至少一个第一层，其在第一波长范围内发射辐射，至少一个第二层与第二磷光发射器发射辐射， 第三波长范围和至少一个中间层，其不含发射体材料并且布置在第一和第二层序列之间。