公开(公告)号：US20080123380A1

公开(公告)日：2008-05-29

申请号：US11881180

申请日：2007-07-26

申请人： Young-Bae Park ,  Hang-Seok Choi

发明人： Young-Bae Park ,  Hang-Seok Choi

IPC分类号： H02M1/08

CPC分类号： H02M3/33507 ,  Y02B70/1433

摘要： The present invention relates to a Switching Mode Power Supply (SMPS) and a driving method thereof. To this end, the present invention provides a SMPS, which is driven in either a Continuous Conduction Mode (CCM) or Discontinuous Conduction Mode (DCM) in accordance with a determination of a time when a voltage between a first stage and a second stage of the switching transistor is resonated. In accordance with the present invention, the SMPS of a quasi-resonant switching mode can be driven with high efficiency regardless of a signal level of an input voltage and the amount of an output terminal load.

摘要翻译： 本发明涉及开关电源（SMPS）及其驱动方法。 为此，本发明提供一种SMPS，其以连续传导模式（CCM）或不连续导通模式（DCM）驱动，根据第一级和第二级之间的电压的时间的确定 开关晶体管谐振。 根据本发明，无论输入电压的信号电平和输出端子负载的量如何，都可以高效率地驱动准谐振开关模式的SMPS。

公开(公告)号：US09001541B2

公开(公告)日：2015-04-07

申请号：US13584408

申请日：2012-08-13

申请人： Gye-Hyun Cho ,  Hyun-Chul Eom ,  Seunguk Yang ,  Young-Bae Park

发明人： Gye-Hyun Cho ,  Hyun-Chul Eom ,  Seunguk Yang ,  Young-Bae Park

IPC分类号： H02M7/539 ,  H02M1/42

CPC分类号： H02M1/4258 ,  H02M1/4208 ,  Y02B70/126 ,  Y02P80/112

摘要： The present invention relates to a switch control circuit, a power factor corrector including the same, and a driving method thereof. According to an exemplary embodiment of the present invention, a turn-on time of a power switch is controlled according to a zero crossing voltage to sense a voltage of both terminals of the power switch, and a turn-off time of the power switch is controlled according to a feedback voltage corresponding to the output voltage. At this time, the switching frequency of the power switch is sensed by the zero crossing voltage and the switching frequency is restricted by a predetermined threshold frequency.

摘要翻译： 本发明涉及开关控制电路，包括该开关控制电路的功率因数校正器及其驱动方法。 根据本发明的示例性实施例，根据过零电压来控制电源开关的接通时间以感测电源开关的两端的电压，并且电源开关的关断时间为 根据与输出电压对应的反馈电压进行控制。 此时，电源开关的开关频率由过零电压感测，开关频率被限制在预定的阈值频率。

公开(公告)号：US20130329150A1

公开(公告)日：2013-12-12

申请号：US13605918

申请日：2012-09-06

申请人： Kyung-Wook KIM ,  Shih Chang Chang ,  Cheng Chen ,  Young-Bae Park ,  John Z. Zhong

发明人： Kyung-Wook KIM ,  Shih Chang Chang ,  Cheng Chen ,  Young-Bae Park ,  John Z. Zhong

IPC分类号： G02F1/136 ,  H01L33/08

CPC分类号： G02F1/13394 ,  G02F1/13338 ,  G02F1/133514 ,  G02F1/134309 ,  G02F1/134363 ,  G02F1/13439 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2001/13396 ,  G02F2001/134372 ,  G02F2201/121 ,  G02F2201/123 ,  G06F3/0412 ,  G06F3/044

摘要： A display that contains a column spacer arrangement which takes advantage of a protrusion on a TFT substrate is provided. One set of column spacers is disposed on top of the protrusion, while a second set of column spacers of substantially the same height as the first set of column spacers are disposed throughout the display. In this way, the display is adequately protected against deformation from external forces while at the same maintaining enough room to allow for a liquid crystal to spread out during the manufacturing process.

摘要翻译： 提供了包含利用TFT基板上的突起的柱间隔件布置的显示器。 一组柱间隔件设置在突起的顶部上，而在整个显示器上设置与第一组柱间隔件基本上相同高度的第二组柱间隔物。 以这种方式，显示器被充分地保护免受来自外部力的变形，同时保持足够的空间以允许液晶在制造过程中展开。

公开(公告)号：US08395715B2

公开(公告)日：2013-03-12

申请号：US12975284

申请日：2010-12-21

申请人： Cheng Ho Yu ,  Ming Xu ,  Young-Bae Park ,  Zhibing Ge ,  Daisuke Nozu ,  Cheng Chen ,  Abbas Jamshidi Roudbari ,  Shih Chang Chang ,  Shawn R. Gettemy

发明人： Cheng Ho Yu ,  Ming Xu ,  Young-Bae Park ,  Zhibing Ge ,  Daisuke Nozu ,  Cheng Chen ,  Abbas Jamshidi Roudbari ,  Shih Chang Chang ,  Shawn R. Gettemy

IPC分类号： G02F1/141 ,  G02F1/133

CPC分类号： G09G3/18 ,  G02F1/13338 ,  G02F2001/134318 ,  G09G3/3648 ,  G09G3/3655 ,  G09G2300/043 ,  G09G2310/0224 ,  G09G2310/0283 ,  G09G2320/0209

摘要： Display ground plane structures may contain slits. Image pixel electrodes in the display may be arranged in rows and columns. Image pixels in the display may be controlled using gate lines that are associated with the rows and data lines that are associated with the columns. An electric field may be produced by each image pixel electrode that extends through a liquid crystal layer to an associated portion of the ground plane. The slits in the ground plane may have a slit width. Data lines may be located sufficiently below the ground plane and sufficiently out of alignment with the slits to minimize crosstalk from parasitic electric fields. A three-column inversion scheme may be used when driving data line signals into the display, so that pairs of pixels that straddle the slits are each driven with a common polarity. Gate line scanning patterns may be used that enhance display uniformity.

摘要翻译： 显示接地平面结构可能包含狭缝。 显示器中的图像像素电极可以以行和列布置。 可以使用与与列相关联的行和数据行相关联的门线来控制显示器中的图像像素。 可以通过延伸穿过液晶层的每个图像像素电极产生电场到接地平面的相关部分。 接地平面中的狭缝可以具有狭缝宽度。 数据线可以充分地位于接地平面的下方，并且与狭缝充分地不对齐，以使来自寄生电场的串扰最小化。 当将数据线信号驱动到显示器中时，可以使用三列反转方案，使得跨越狭缝的像素对各自以共同的极性驱动。 可以使用增强显示均匀性的栅极线扫描图案。

公开(公告)号：US20110256626A1

公开(公告)日：2011-10-20

申请号：US13120331

申请日：2010-09-17

申请人： Young-Bae Park ,  Hyo-Soo Kim ,  Yoo-Wook Kwon ,  Hyun-Jai Cho ,  Jae-Seung Paek

发明人： Young-Bae Park ,  Hyo-Soo Kim ,  Yoo-Wook Kwon ,  Hyun-Jai Cho ,  Jae-Seung Paek

IPC分类号： C12N5/071

CPC分类号： C12N5/16 ,  C12N5/0696 ,  C12N2500/44 ,  C12N2500/84 ,  C12N2501/235 ,  C12N2506/00

摘要： The present invention provides a method for producing customized pluripotent stem cells. Specifically, the present invention comprises following steps: extracting proteins from any of the dedifferentiated stem cells or induced pluripotent stem cells, the said dedifferentiated or pluripotent stem cells being prepared by any known method; introducing the protein extract into the adult somatic cells; and culturing the adult somatic cells to produce pluripotent stem cells having the same pluripotency as that of embryonic stem cells. In addition, pluripotent stem cells produced according to the present method and cell therapeutics comprising the same are provided. The method allows pluripotent stem cells to be produced very easily and at a significantly higher yield, compared to typical methods.

摘要翻译： 本发明提供一种生产定制多能干细胞的方法。 具体地说，本发明包括以下步骤：从任何去分化干细胞或诱导多能干细胞中提取蛋白质，所述去分化或多能干细胞通过任何已知方法制备; 将蛋白质提取物引入成体体细胞; 并培养成体细胞以产生具有与胚胎干细胞相同多能性的多能干细胞。 此外，提供了根据本发明方法产生的多能干细胞和包含其的细胞治疗剂。 与典型的方法相比，该方法允许非常容易地和以显着更高的产量制造多能干细胞。

公开(公告)号：US08033144B2

公开(公告)日：2011-10-11

申请号：US12041780

申请日：2008-03-04

申请人： Sang-Hee Yoo ,  Jong-Deuk Bae ,  Bo-Young Chang ,  Young-Bae Park ,  Ji-Maeng Kim ,  Soo-Jin Jung ,  Ae-Na Jo

发明人： Sang-Hee Yoo ,  Jong-Deuk Bae ,  Bo-Young Chang ,  Young-Bae Park ,  Ji-Maeng Kim ,  Soo-Jin Jung ,  Ae-Na Jo

IPC分类号： D06F39/10

CPC分类号： D06F39/10

摘要： In a foreign materials filtering apparatus and a washing machine having the same, a filter cover is installed at a washing water circulating duct disposed inside a washing tub, and a net filter is installed at an inner side of the filter cover. Accordingly, the net filter is prevented from directly contacting laundry, thereby preventing the not filter and the laundry from being damaged. Furthermore, since the net filter is covered by the filter cover, the entire appearance is enhanced. Additionally, when the net filter is mounted at the filter cover, the filter unit becomes modularized to be facilitate a detachable mounting.

摘要翻译： 在异物过滤装置和具有该外部材料过滤装置的洗衣机中，过滤器盖安装在设置在洗涤桶内部的洗涤水循环管道上，并且净过滤器安装在过滤器盖的内侧。 因此，防止网状过滤器直接接触衣物，从而防止不过滤器和衣物被损坏。 此外，由于净过滤器被过滤器盖覆盖，因此整体外观增强。 此外，当净过滤器安装在过滤器盖上时，过滤器单元变得模块化，以便于可拆卸的安装。

公开(公告)号：US07863620B2

公开(公告)日：2011-01-04

申请号：US12574915

申请日：2009-10-07

申请人： Hyang-Shik Kong ,  Sung-Wook Huh ,  Young-Bae Park

发明人： Hyang-Shik Kong ,  Sung-Wook Huh ,  Young-Bae Park

IPC分类号： H01L29/76 ,  H01L21/00

CPC分类号： G02F1/1362 ,  G02F1/13458 ,  G02F2001/136254 ,  H01L21/32134 ,  H01L21/32136 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288

摘要： Disclosed is a thin film transistor substrate and a system for inspecting the same. The thin film transistor substrate comprises gate wiring formed on an insulation substrate and including gate lines, and gate electrodes and gate pads connected to the gate lines; a gate insulation layer covering the gate wiring; a semiconductor layer formed over the gate insulation layer; data wiring formed over the gate insulation layer and including data pads; a protection layer covering the data wiring; auxiliary pads connected to the data pads through contact holes formed in the protection layer; and a pad auxiliary layer formed protruding a predetermined height under the data pads. The inspection system for determining whether a thin film transistor substrate is defective, in which the thin film transistor substrate comprises gate wiring including gate lines, gate electrodes and gate pads, and data wiring including source electrodes and drain electrodes, includes a probe pin for contacting the gate pads or data pads and transmitting a corresponding signal, wherein a contact tip at a distal end of the probe pin for contacting the gate pads or the data pads is rounded, and a radius of the rounded contact tip is 2 μm or less, or the rounded contact tip is coated with gold (Au).

摘要翻译： 公开了一种薄膜晶体管基板及其检查系统。 薄膜晶体管基板包括形成在绝缘基板上并包括栅极线的栅极布线，以及连接到栅极线的栅电极和栅极焊盘; 覆盖栅极布线的栅极绝缘层; 形成在所述栅绝缘层上的半导体层; 数据布线形成在栅极绝缘层上并包括数据焊盘; 覆盖数据线的保护层; 辅助焊盘通过形成在保护层中的接触孔连接到数据焊盘; 以及在数据焊盘下方突出预定高度形成的焊盘辅助层。 用于确定薄膜晶体管基板是否缺陷的检查系统，其中薄膜晶体管基板包括包括栅极线，栅电极和栅极焊盘的栅极布线，以及包括源电极和漏电极的数据布线，包括用于接触的探针 所述栅极焊盘或数据焊盘并传输相应的信号，其中用于接触所述栅极焊盘或所述数据焊盘的所述探针的远端处的接触尖端是圆形的，并且所述圆形接触尖端的半径为2μm或更小， 或圆形接触尖端涂有金（Au）。

公开(公告)号：US07732301B1

公开(公告)日：2010-06-08

申请号：US12081702

申请日：2008-04-18

申请人： Thomas Henry Pinnington ,  James M. Zahler ,  Young-Bae Park ,  Corinne Ladous ,  Sean Olson

发明人： Thomas Henry Pinnington ,  James M. Zahler ,  Young-Bae Park ,  Corinne Ladous ,  Sean Olson

IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L21/28 ,  H01L21/44

CPC分类号： H01L21/2654 ,  H01L21/76254 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of making a bonded intermediate substrate includes forming a weak interface in a GaN source substrate by implanting ions into an N-terminated surface of the GaN source substrate, bonding the N-terminated surface of the GaN source substrate to a handle substrate, and exfoliating a thin GaN single crystal layer from the source substrate such that the thin GaN exfoliated single crystal layer remains bonded to the handle substrate and a Ga-terminated surface of the thin GaN single crystal layer is exposed. The method further includes depositing a capping layer directly onto the exposed surface of the thin GaN single crystal layer, and annealing the thin GaN single crystal layer in a nitrogen containing atmosphere after depositing the capping layer. The in-plane strain present in the thin GaN single crystal layer after the annealing is reduced relative to an in-plane strain present in said layer prior to the annealing.

摘要翻译： 制造粘合的中间衬底的方法包括：通过将离子注入到GaN源衬底的N端接表面中，在GaN源衬底中形成弱界面，将GaN源极衬底的N端接表面接合到处理衬底上，以及 从源极衬底剥离薄的GaN单晶层，使得薄的GaN剥离的单晶层保持结合到手柄衬底，并且暴露出薄的GaN单晶层的Ga封端的表面。 该方法还包括将覆盖层直接沉积到薄GaN单晶层的暴露表面上，并且在沉积覆盖层之后在含氮气氛中退火薄GaN单晶层。 在退火之前，存在于薄GaN单晶层中的面内应变相对于退火前存在于所述层中的面内应变而降低。

公开(公告)号：US20050087770A1

公开(公告)日：2005-04-28

申请号：US10986930

申请日：2004-11-15

申请人： Hyang-Shik Kong ,  Sung-Wook Huh ,  Young-Bae Park

发明人： Hyang-Shik Kong ,  Sung-Wook Huh ,  Young-Bae Park

IPC分类号： G02F1/136 ,  H01L21/3213 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L29/73

CPC分类号： G02F1/1362 ,  G02F1/13458 ,  G02F2001/136254 ,  H01L21/32134 ,  H01L21/32136 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288

摘要： Disclosed is a thin film transistor substrate and a system for inspecting the same. The thin film transistor substrate comprises gate wiring formed on an insulation substrate and including gate lines, and gate electrodes and gate pads connected to the gate lines; a gate insulation layer covering the gate wiring; a semiconductor layer formed over the gate insulation layer; data wiring formed over the gate insulation layer and including data pads; a protection layer covering the data wiring; auxiliary pads connected to the data pads through contact holes formed in the protection layer; and a pad auxiliary layer formed protruding a predetermined height under the data pads. The inspection system for determining whether a thin film transistor substrate is defective, in which the thin film transistor substrate comprises gate wiring including gate lines, gate electrodes and gate pads, and data wiring including source electrodes and drain electrodes, includes a probe pin for contacting the gate pads or data pads and transmitting a corresponding signal, wherein a contact tip at a distal end of the probe pin for contacting the gate pads or the data pads is rounded, and a radius of the rounded contact tip is 2 μm or less, or the rounded contact tip is coated with gold (Au).

摘要翻译： 公开了一种薄膜晶体管基板及其检查系统。 薄膜晶体管基板包括形成在绝缘基板上并包括栅极线的栅极布线，以及连接到栅极线的栅电极和栅极焊盘; 覆盖栅极布线的栅极绝缘层; 形成在所述栅绝缘层上的半导体层; 数据布线形成在栅极绝缘层上并包括数据焊盘; 覆盖数据线的保护层; 辅助焊盘通过形成在保护层中的接触孔连接到数据焊盘; 以及在数据焊盘下方突出预定高度形成的焊盘辅助层。 用于确定薄膜晶体管基板是否缺陷的检查系统，其中薄膜晶体管基板包括包括栅极线，栅电极和栅极焊盘的栅极布线，以及包括源电极和漏电极的数据布线，包括用于接触的探针 栅极焊盘或数据焊盘并传输相应的信号，其中用于接触栅极焊盘或数据焊盘的探针的远端处的接触尖端是圆形的，并且圆形接触尖端的半径为2μm或更小， 或圆形接触尖端涂有金（Au）。

公开(公告)号：US08897305B2

公开(公告)日：2014-11-25

申请号：US12429708

申请日：2009-04-24

申请人： Yeong-Moon Son ,  Hyun-Jeong Kang ,  Ki-Back Kim ,  Young-Bae Park ,  Sunny Chang ,  Sang-Kyou Ryou

发明人： Yeong-Moon Son ,  Hyun-Jeong Kang ,  Ki-Back Kim ,  Young-Bae Park ,  Sunny Chang ,  Sang-Kyou Ryou

IPC分类号： H04L12/28 ,  H04W76/00 ,  H04W4/22 ,  H04W68/02

CPC分类号： H04W4/22 ,  H04W4/90 ,  H04W68/025 ,  H04W76/50

摘要： Apparatuses and methods for providing an emergency service in a wireless communication system are provided. The method includes allocating a Connection IDentifier (CID) used to transmit the emergency service message, determining a Convergence Sublayer (CS) type for processing the emergency service message, generating a Downlink Channel Descriptor (DCD) message which comprises at least one of the allocated CID and information relating to the determined CS type, and transmitting the generated DCD message to a Mobile Station (MS).

摘要翻译： 提供了在无线通信系统中提供紧急服务的装置和方法。 该方法包括分配用于发送紧急服务消息的连接标识符（CID），确定用于处理紧急服务消息的收敛子层（CS）类型，生成下行链路信道描述符（DCD）消息，其包括所分配的 CID和与所确定的CS类型相关的信息，以及将所生成的DCD消息发送到移动站（MS）。