公开(公告)号：US07223674B2

公开(公告)日：2007-05-29

申请号：US10840733

申请日：2004-05-06

申请人： Pary Baluswamy ,  Peter Benson

发明人： Pary Baluswamy ,  Peter Benson

IPC分类号： H01L21/301

CPC分类号： H01L21/67282 ,  B23K26/364 ,  G03F9/708 ,  G03F9/7084 ,  H01L21/3065 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein are methods for forming photolithography alignment markers on the back side of a substrate, such as a crystalline silicon substrate used in the manufacture of semiconductor integrated circuits. According to the disclosed techniques, laser radiation is used to remove the material (e.g., silicon) from the back side of a substrate to form the back side alignment markers at specified areas. Such removal can comprise the use of laser ablation or laser-assisted etching. The substrate is placed on a motor-controlled substrate holding mechanism in a laser removal chamber, and the areas are automatically moved underneath the laser radiation to removal the material. The substrate holding mechanism can comprise a standard chuck (in which case use of a protective layer on the front side of the substrate is preferred), or a substrate clamping assembly which suspends the substrate at its edges (in which case the protective layer is not necessary). Alternatively, a stencil having holes corresponding to the shape of the back side alignment markers can be placed over the back side of the substrate to mitigate the need to move the substrate to the areas with precision.

摘要翻译： 这里公开了在衬底的背面上形成光刻对准标记的方法，例如用于制造半导体集成电路的晶体硅衬底。 根据所公开的技术，使用激光辐射从衬底的背面去除材料（例如硅），以在特定区域形成背面对准标记。 这种去除可以包括使用激光烧蚀或激光辅助蚀刻。 将基板放置在激光去除室中的电动机控制的基板保持机构上，并且这些区域在激光辐射下自动移动以去除材料。 基板保持机构可以包括标准卡盘（在这种情况下优选使用基板的正面上的保护层）或将基板悬挂在其边缘处的基板夹持组件（在这种情况下保护层不是保护层） 必要）。 或者，具有与背面对准标记的形状对应的孔的模板可以放置在衬底的背面上，以减轻将衬底精确地移动到区域的需要。

公开(公告)号：US20060261340A1

公开(公告)日：2006-11-23

申请号：US11494453

申请日：2006-07-28

申请人： Warren Farnworth ,  Sidney Rigg ,  William Hiatt ,  Kyle Kirby ,  Peter Benson ,  James Wark ,  Alan Wood ,  David Hembree ,  Salman Akram ,  Charles Watkins

发明人： Warren Farnworth ,  Sidney Rigg ,  William Hiatt ,  Kyle Kirby ,  Peter Benson ,  James Wark ,  Alan Wood ,  David Hembree ,  Salman Akram ,  Charles Watkins

IPC分类号： H01L29/04 ,  H01L33/00 ,  H01L29/768 ,  H01L27/148 ,  H01L31/0203

CPC分类号： H01L27/14618 ,  H01L23/481 ,  H01L24/48 ,  H01L31/0203 ,  H01L31/02325 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Microelectronic imagers and methods for packaging microelectronic imagers are disclosed herein. In one embodiment, a microelectronic imaging unit can include a microelectronic die, an image sensor, an integrated circuit electrically coupled to the image sensor, and a bond-pad electrically coupled to the integrated circuit. An electrically conductive through-wafer interconnect extends through the die and is in contact with the bond-pad. The interconnect can include a passage extending completely through the substrate and the bond-pad with conductive fill material at least partially disposed in the passage. An electrically conductive support member is carried by and projects from the bond-pad. A cover over the image sensor is coupled to the support member.

摘要翻译： 本文公开了微电子成像器和用于封装微电子成像器的方法。 在一个实施例中，微电子成像单元可以包括微电子管芯，图像传感器，电耦合到图像传感器的集成电路以及电耦合到集成电路的接合焊盘。 导电晶片互连延伸穿过管芯并且与焊盘接触。 互连可以包括完全延伸穿过基底的通道和具有至少部分地设置在通道中的导电填充材料的接合垫。 导电支撑构件由接合垫承载和突出。 图像传感器上的盖连接到支撑构件。

公开(公告)号：US20060226118A1

公开(公告)日：2006-10-12

申请号：US11449532

申请日：2006-06-07

申请人： Pary Baluswamy ,  Peter Benson

发明人： Pary Baluswamy ,  Peter Benson

IPC分类号： B44C1/22 ,  C23F1/00

CPC分类号： H01L21/67282 ,  B23K26/364 ,  G03F9/708 ,  G03F9/7084 ,  H01L21/3065 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein are methods for forming photolithography alignment markers on the back side of a substrate, such as a crystalline silicon substrate used in the manufacture of semiconductor integrated circuits. According to the disclosed techniques, laser radiation is used to remove the material (e.g., silicon) from the back side of a substrate to form the back side alignment markers at specified areas. Such removal can comprise the use of laser ablation or laser-assisted etching. The substrate is placed on a motor-controlled substrate holding mechanism in a laser removal chamber, and the areas are automatically moved underneath the laser radiation to removal the material. The substrate holding mechanism can comprise a standard chuck (in which case use of a protective layer on the front side of the substrate is preferred), or a substrate clamping assembly which suspends the substrate at its edges (in which case the protective layer is not necessary). Alternatively, a stencil having holes corresponding to the shape of the back side alignment markers can be placed over the back side of the substrate to mitigate the need to move the substrate to the areas with precision.

摘要翻译： 这里公开了在衬底的背面上形成光刻对准标记的方法，例如用于制造半导体集成电路的晶体硅衬底。 根据所公开的技术，使用激光辐射从衬底的背面去除材料（例如硅），以在特定区域形成背面对准标记。 这种去除可以包括使用激光烧蚀或激光辅助蚀刻。 将基板放置在激光去除室中的电动机控制的基板保持机构上，并且这些区域在激光辐射下自动移动以去除材料。 基板保持机构可以包括标准卡盘（在这种情况下优选使用基板的正面上的保护层）或将基板悬挂在其边缘处的基板夹持组件（在这种情况下保护层不是保护层） 必要）。 或者，具有与背面对准标记的形状对应的孔的模板可以放置在衬底的背面上，以减轻将衬底精确地移动到区域的需要。

公开(公告)号：US20060205116A1

公开(公告)日：2006-09-14

申请号：US11430483

申请日：2006-05-09

申请人： Peter Benson ,  Charles Watkins

发明人： Peter Benson ,  Charles Watkins

IPC分类号： H01L21/00 ,  H01L23/52 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L21/563 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2924/00014 ,  H05K3/305 ,  H05K2201/10674 ,  H05K2201/10977 ,  H05K2201/10984 ,  Y02P70/613 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Methods for packaging microfeature devices on and/or in microfeature workpieces at the wafer level and microfeature devices that are formed using such methods are disclosed herein. In one embodiment, a method comprises providing a workpiece including a substrate having a plurality of microelectronic dies on and/or in the substrate. The individual dies include integrated circuitry and pads electrically coupled to the integrated circuitry. The method then includes depositing an underfill layer onto a front side of the substrate. The method also includes selectively forming apertures in the underfill layer to expose the pads at the front side of the substrate. The method further includes depositing a conductive material into the apertures and in electrical contact with the corresponding pads. In one aspect of this embodiment, the underfill layer is a photoimageable material.

公开(公告)号：US20060134827A1

公开(公告)日：2006-06-22

申请号：US11336567

申请日：2006-01-20

申请人： Alan Wood ,  Warren Farnworth ,  Charles Watkins ,  Peter Benson

发明人： Alan Wood ,  Warren Farnworth ,  Charles Watkins ,  Peter Benson

IPC分类号： H01L21/50

CPC分类号： H01L27/14685 ,  B33Y10/00 ,  B33Y80/00 ,  H01L21/56 ,  H01L23/3128 ,  H01L27/14618 ,  H01L27/14627 ,  H01L2224/04105 ,  H01L2224/20 ,  H01L2924/01005 ,  H01L2924/01027 ,  H01L2924/01046 ,  H01L2924/12041

摘要： Microlenses for directing radiation toward a sensor of an imaging device include a plurality of mutually adhered layers of cured optically transmissive material. Systems include at least one microprocessor, a substrate including an array of microlenses formed thereon in electrical communication with the at least one microprocessor. At least one microlens in the array includes a plurality of mutually adhered layers of cured optically transmissive material.

摘要翻译： 用于将辐射引导到成像装置的传感器的微透镜包括固化的光学透射材料的多个相互附着的层。 系统包括至少一个微处理器，包括形成在其上的与该至少一个微处理器电连通的微透镜阵列的衬底。 阵列中的至少一个微透镜包括固化的光学透射材料的多个相互附着的层。

公开(公告)号：US20060043569A1

公开(公告)日：2006-03-02

申请号：US11129105

申请日：2005-05-13

申请人： Peter Benson ,  Salman Akram

发明人： Peter Benson ,  Salman Akram

IPC分类号： H01L23/04 ,  H01L29/40

CPC分类号： H01L21/76898 ,  B33Y80/00 ,  H01L23/481 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14685 ,  H01L31/02161 ,  H01L31/02327 ,  H01L2224/0554 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01021 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/013 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Low temperature processed back side redistribution lines (RDLs) are disclosed. Low temperature processed back side RDLs may be electrically connected to the active surface devices of a semiconductor substrate using through wafer interconnects (TWIs). The TWIs may be formed prior to forming the RDLs, after forming the RDLs, or substantially simultaneously to forming the RDLs. The material for the back side RDLs and various other associated materials, such as dielectrics and conductive via filler materials, are processed at temperatures sufficiently low so as to not damage the semiconductor devices or associated components contained on the active surface of the semiconductor substrate. The low temperature processed back side RDLs of the present invention may be employed with optically interactive semiconductor devices and semiconductor memory devices, among many others. Semiconductor devices employing the RDLs of the present invention may be stacked and electrically connected theretogether.

摘要翻译： 公开了低温处理后侧再分配线（RDL）。 低温处理的背面RDL可以通过晶片互连（TWI）与半导体衬底的有源表面器件电连接。 TWI可以在形成RDL之后，在形成RDL之后形成，或者基本上同时形成以形成RDL。 用于背面RDL和各种其它相关材料（例如电介质和导电通孔填充材料）的材料在足够低的温度下进行处理，以便不损坏包含在半导体衬底的有源表面上的半导体器件或相关组件。 本发明的低温处理背面RDL可以用于光学交互式半导体器件和半导体存储器件等等。 采用本发明的RDL的半导体器件可以堆叠并且电连接在一起。

公开(公告)号：US20050275048A1

公开(公告)日：2005-12-15

申请号：US10867352

申请日：2004-06-14

申请人： Warren Farnworth ,  Sidney Rigg ,  William Hiatt ,  Kyle Kirby ,  Peter Benson ,  James Wark ,  Alan Wood ,  David Hembree ,  Salman Akram ,  Charles Watkins

发明人： Warren Farnworth ,  Sidney Rigg ,  William Hiatt ,  Kyle Kirby ,  Peter Benson ,  James Wark ,  Alan Wood ,  David Hembree ,  Salman Akram ,  Charles Watkins

IPC分类号： H01L21/00 ,  H01L23/02 ,  H01L23/48 ,  H01L27/14 ,  H01L27/146 ,  H01L31/00 ,  H01L31/0203 ,  H01L31/0232

CPC分类号： H01L27/14618 ,  H01L23/481 ,  H01L24/48 ,  H01L31/0203 ,  H01L31/02325 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Microelectronic imagers and methods for packaging microelectronic imagers are disclosed herein. In one embodiment, a microelectronic imaging unit can include a microelectronic die, an image sensor, an integrated circuit electrically coupled to the image sensor, and a bond-pad electrically coupled to the integrated circuit. An electrically conductive through-wafer interconnect extends through the die and is in contact with the bond-pad. The interconnect can include a passage extending completely through the substrate and the bond-pad with conductive fill material at least partially disposed in the passage. An electrically conductive support member is carried by and projects from the bond-pad. A cover over the image sensor is coupled to the support member.

摘要翻译： 本文公开了微电子成像器和用于封装微电子成像器的方法。 在一个实施例中，微电子成像单元可以包括微电子管芯，图像传感器，电耦合到图像传感器的集成电路以及电耦合到集成电路的接合焊盘。 导电晶片互连延伸穿过管芯并且与焊盘接触。 互连可以包括完全延伸穿过基底的通道和具有至少部分地设置在通道中的导电填充材料的接合垫。 导电支撑构件由接合垫承载和突出。 图像传感器上的盖连接到支撑构件。

公开(公告)号：US20050116177A1

公开(公告)日：2005-06-02

申请号：US10869235

申请日：2004-06-16

申请人： Francis Aguirre ,  Michele Craton ,  Jack Lai ,  David Phillips ,  Peter Benson

发明人： Francis Aguirre ,  Michele Craton ,  Jack Lai ,  David Phillips ,  Peter Benson

IPC分类号： A61C13/15 ,  A61C19/00 ,  F21K99/00 ,  G02B6/06 ,  G02B6/42 ,  G02B6/43

CPC分类号： G02B6/4249 ,  A61C19/003 ,  A61C19/004 ,  F21K9/69 ,  F21V29/80 ,  G02B6/06 ,  G02B6/4201 ,  G02B6/4206 ,  G02B6/423 ,  G02B6/4231 ,  G02B6/4269 ,  G02B6/4298

摘要： A radiation modifying apparatus comprises a plurality of solid state radiation sources to generate radiation that modifies a first material such as by curing or creating alignment through polarization. The solid state radiation sources can be disposed in an array pattern. Optical concentrators, arranged in a corresponding array pattern, receive radiation from corresponding solid state radiation sources. The concentrated radiation is received by a plurality of optical waveguides, also arranged in a corresponding array pattern. Each optical waveguide includes a first end to receive the radiation and a second end to output the radiation. The radiation modifying apparatus can be utilized for continuous substrate, sheet, piece part, spot curing, and/or 3D radiation-cure processes.

公开(公告)号：US5523182A

公开(公告)日：1996-06-04

申请号：US333457

申请日：1994-11-02

申请人： Stanford R. Ovshinsky ,  Michael A. Fetcenko ,  Cristian Fierro ,  Paul R. Gifford ,  Dennis A. Corrigan ,  Peter Benson ,  Franklin J. Martin

发明人： Stanford R. Ovshinsky ,  Michael A. Fetcenko ,  Cristian Fierro ,  Paul R. Gifford ,  Dennis A. Corrigan ,  Peter Benson ,  Franklin J. Martin

IPC分类号： H01M4/26 ,  H01M4/28 ,  H01M4/32 ,  H01M4/52 ,  H01M4/62 ,  H01M4/80 ,  H01M10/26 ,  H01M10/34

CPC分类号： H01M4/52 ,  H01M4/32 ,  H01M4/366 ,  H01M4/624 ,  H01M10/30 ,  H01M2300/0014

摘要： A positive electrode material for use in electrochemical cells. This material comprises particles of positive electrode material including at least one electrochemically active hydroxide and a substantially continuous, uniform, encapsulant layer surrounding the particles of positive electrode material. The encapsulant layer is formed from a material which, upon oxidation during processing or during charging of the electrode, is convertible to a highly conductive form, and which, upon subsequent discharge of the electrode, does not revert to its previous form. Preferably, the electrochemically active hydroxide includes at least nickel hydroxide. The encapsulant layer is preferably formed from at least cobalt hydroxide or cobalt oxyhydroxide. This layer is formed on the particles of positive electrode material by precipitation from a cobalt salt solution, which can be a cobalt sulfate solution. Also disclosed are positive electrodes including the material and a precipitation method of forming the material.

摘要翻译： 用于电化学电池的正极材料。 该材料包括正极材料颗粒，其包括至少一个电化学活性氢氧化物和围绕正极材料颗粒的基本上连续，均匀的包封层。 密封剂层由材料形成，该材料在处理过程中或在电极充电期间被氧化，可转换为高导电形式，并且在随后的电极放电时，其不会恢复到其先前的形式。 优选地，电化学活性氢氧化物至少包括氢氧化镍。 密封剂层优选由至少氢氧化钴或羟基氧化钴形成。 该层通过从可以是硫酸钴溶液的钴盐溶液中沉淀而形成在正极材料颗粒上。 还公开了包括材料的正电极和形成材料的沉淀方法。

公开(公告)号：US20070259517A1

公开(公告)日：2007-11-08

申请号：US11777797

申请日：2007-07-13

申请人： Peter Benson ,  Salman Akram

发明人： Peter Benson ,  Salman Akram

IPC分类号： H01L21/4763

CPC分类号： H01L21/76898 ,  B33Y80/00 ,  H01L23/481 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14685 ,  H01L31/02161 ,  H01L31/02327 ,  H01L2224/0554 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01021 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/013 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Low temperature processed back side redistribution lines (RDLs) are disclosed. Low temperature processed back side RDLs may be electrically connected to the active surface devices of a semiconductor substrate using through wafer interconnects (TWIs). The TWIs may be formed prior to forming the RDLs, after forming the RDLs, or substantially simultaneously to forming the RDLs. The material for the back side RDLs and various other associated materials, such as dielectrics and conductive via filler materials, are processed at temperatures sufficiently low so as to not damage the semiconductor devices or associated components contained on the active surface of the semiconductor substrate. The low temperature processed back side RDLs of the present invention may be employed with optically interactive semiconductor devices and semiconductor memory devices, among many others. Semiconductor devices employing the RDLs of the present invention may be stacked and electrically connected theretogether.

摘要翻译： 公开了低温处理后侧再分配线（RDL）。 低温处理的背面RDL可以通过晶片互连（TWI）与半导体衬底的有源表面器件电连接。 TWI可以在形成RDL之后，在形成RDL之后形成，或者基本上同时形成以形成RDL。 用于背面RDL和各种其它相关材料（例如电介质和导电通孔填充材料）的材料在足够低的温度下进行处理，以便不损坏包含在半导体衬底的有源表面上的半导体器件或相关组件。 本发明的低温处理背面RDL可以用于光学交互式半导体器件和半导体存储器件等等。 采用本发明的RDL的半导体器件可以堆叠并且电连接在一起。