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公开(公告)号：US08445916B2
公开(公告)日：2013-05-21
申请号：US12793943
申请日：2010-06-04
申请人： Akihiro Kojima , Yoshiaki Sugizaki
发明人： Akihiro Kojima , Yoshiaki Sugizaki
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/40 , H01L33/44 , H01L33/486 , H01L33/62 , H01L2224/16
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating film, a first interconnection, a second interconnection, a barrier metal layer, a first metal pillar, a second metal pillar, and a resin. The semiconductor layer has a first major surface, a second major surface formed on an opposite side to the first major surface, and a light emitting layer. The first electrode is provided on the second major surface of the semiconductor layer. The second electrode is provided on the second major surface of the semiconductor layer and includes a silver layer. The insulating film is provided on the second major surface side of the semiconductor layer. The barrier metal layer is provided between the second electrode and the insulating film and between the second electrode and the second interconnection to cover the second electrode.
摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，绝缘膜，第一互连，第二互连，阻挡金属层，第一金属柱，第二金属柱， 和树脂。 半导体层具有第一主表面，与第一主表面相反的一侧形成的第二主表面和发光层。 第一电极设置在半导体层的第二主表面上。 第二电极设置在半导体层的第二主表面上并且包括银层。 绝缘膜设置在半导体层的第二主表面侧。 阻挡金属层设置在第二电极和绝缘膜之间以及第二电极和第二互连之间以覆盖第二电极。
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公开(公告)号：US20120178192A1
公开(公告)日：2012-07-12
申请号：US13423591
申请日：2012-03-19
申请人： Akihiro KOJIMA , Yoshiaki Sugizaki
发明人： Akihiro KOJIMA , Yoshiaki Sugizaki
CPC分类号： H01L33/486 , H01L33/44 , H01L33/505 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device, includes: a substrate including a first major surface and a second major surface, the first major surface including a recess and a protrusion, the second major surface being formed on a side opposite to the first major surface; a first electrode provided on the first major surface; a semiconductor light emitting element provided on the first electrode and electrically connected to the first electrode; a second electrode provided on the second major surface; and a through-electrode provided to pass through the substrate at the recess and electrically connect the first electrode and the second electrode.
摘要翻译： 一种半导体发光器件，包括：包括第一主表面和第二主表面的基板，所述第一主表面包括凹部和突起，所述第二主表面形成在与所述第一主表面相对的一侧上; 设置在所述第一主表面上的第一电极; 半导体发光元件，设置在所述第一电极上并电连接到所述第一电极; 设置在所述第二主表面上的第二电极; 以及设置成在所述凹部处穿过所述基板并且电连接所述第一电极和所述第二电极的贯通电极。
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公开(公告)号：US20100237368A1
公开(公告)日：2010-09-23
申请号：US12575778
申请日：2009-10-08
申请人： Akihiro KOJIMA , Yoshiaki Sugizaki
发明人： Akihiro KOJIMA , Yoshiaki Sugizaki
IPC分类号： H01L33/00
CPC分类号： H01L33/486 , H01L33/44 , H01L33/505 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device, includes: a substrate including a first major surface and a second major surface, the first major surface including a recess and a protrusion, the second major surface being formed on a side opposite to the first major surface; a first electrode provided on the first major surface; a semiconductor light emitting element provided on the first electrode and electrically connected to the first electrode; a second electrode provided on the second major surface; and a through-electrode provided to pass through the substrate at the recess and electrically connect the first electrode and the second electrode.
摘要翻译： 一种半导体发光器件，包括：包括第一主表面和第二主表面的基板，所述第一主表面包括凹部和突起，所述第二主表面形成在与所述第一主表面相对的一侧上; 设置在所述第一主表面上的第一电极; 半导体发光元件，设置在所述第一电极上并电连接到所述第一电极; 设置在所述第二主表面上的第二电极; 以及设置成在所述凹部处穿过所述基板并且电连接所述第一电极和所述第二电极的贯通电极。
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公开(公告)号：US08829359B2
公开(公告)日：2014-09-09
申请号：US13647845
申请日：2012-10-09
IPC分类号： H05K1/16
CPC分类号： B81B7/0038 , B81B2201/0221 , B81B2203/04 , B81C1/00476
摘要： A substrate includes a functional element. An insulating first film forms a cavity which stores the functional element, together with the substrate, and includes a plurality of through-holes. An insulating second film covers the plurality of through-holes, is formed on the first film, and has a gas permeability which is higher than that of the first film. An insulating third film is formed on the second film and has a gas permeability which is lower than the second film. An insulating fourth film is formed on the third film and has an elasticity which is larger than the third film.
摘要翻译： 衬底包括功能元件。 绝缘的第一膜形成空腔，其与基板一起存储功能元件，并且包括多个通孔。 绝缘的第二膜覆盖多个通孔，形成在第一膜上，并且具有比第一膜高的透气性。 在第二薄膜上形成绝缘的第三薄膜，其透气度低于第二薄膜。 绝缘的第四膜形成在第三膜上，并且具有大于第三膜的弹性。
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公开(公告)号：US08278676B2
公开(公告)日：2012-10-02
申请号：US12728837
申请日：2010-03-22
申请人： Akihiro Kojima , Yoshiaki Sugizaki
发明人： Akihiro Kojima , Yoshiaki Sugizaki
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/44 , H01L33/486 , H01L33/50 , H01L33/505 , H01L33/62 , H01L2224/16 , H01L2933/0016
摘要： A semiconductor light-emitting device includes: a first semiconductor layer having a first major surface and a second major surface which is an opposite side to the first major surface; a second semiconductor layer provided on the second major surface of the first semiconductor layer and including a light-emitting layer; a first electrode provided on the second major surface of the first semiconductor layer; a second electrode provided on a surface of the second semiconductor layer, the surface being an opposite side to the first semiconductor layer; an insulating film provided on a side surface of the second semiconductor layer, and an edge of an interface between the first semiconductor layer and the second semiconductor layer; and a metal film provided on the insulating film from the second electrode side toward the edge of the interface.
摘要翻译： 一种半导体发光器件包括：具有第一主表面的第一半导体层和与第一主表面相对的第二主表面; 第二半导体层，设置在第一半导体层的第二主表面上并且包括发光层; 设置在第一半导体层的第二主表面上的第一电极; 设置在所述第二半导体层的表面上的第二电极，所述表面是与所述第一半导体层相反的一侧; 设置在所述第二半导体层的侧表面上的绝缘膜，以及所述第一半导体层和所述第二半导体层之间的界面的边缘; 以及设置在所述绝缘膜上的从所述第二电极侧朝向所述界面的边缘的金属膜。
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公开(公告)号：US20120153344A1
公开(公告)日：2012-06-21
申请号：US13406840
申请日：2012-02-28
IPC分类号： H01L33/36
CPC分类号： H01L33/62 , H01L33/0008 , H01L33/0016 , H01L33/0095 , H01L33/36 , H01L33/387 , H01L33/56 , H01L2933/0016 , H01L2933/005 , H01L2933/0066 , Y10S438/94
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer including a first surface, a second surface opposite to the first surface, and a light emitting layer; a p-side electrode provided on the second surface of the semiconductor layer in a region including the light emitting layer; an n-side electrode provided on the second surface of the semiconductor layer in a region not including the light emitting layer; an insulating film being more flexible than the semiconductor layer, the insulating film provided on the second surface and a side surface of the semiconductor layer, and the insulating film having a first opening reaching the p-side electrode and a second opening reaching the n-side electrode; a p-side interconnection layer provided on the insulating film and connected to the p-side electrode; and an n-side interconnection layer provided on the insulating film and connected to the n-side electrode.
摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，包括第一表面，与第一表面相对的第二表面和发光层; p侧电极，设置在包括发光层的区域中的半导体层的第二表面上; 在不包括发光层的区域中设置在半导体层的第二表面上的n侧电极; 绝缘膜比半导体层更柔性，设置在第二表面上的绝缘膜和半导体层的侧表面，绝缘膜具有到达p侧电极的第一开口和到达p侧电极的第二开口， 侧电极; p侧互连层，设置在绝缘膜上并连接到p侧电极; 以及设置在绝缘膜上并连接到n侧电极的n侧互连层。
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公开(公告)号：US20110300651A1
公开(公告)日：2011-12-08
申请号：US12888558
申请日：2010-09-23
IPC分类号： H01L33/44
CPC分类号： H01L33/0079 , H01L33/0075 , H01L33/486 , H01L2224/16 , H01L2933/0066
摘要： According to one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include forming a first electrode and a second electrode on a semiconductor layer which is included in a first structure body, the semiconductor layer including a light-emitting layer on a substrate. The method can include forming a first metal pillar in conduction with the first electrode, and a second metal pillar in conduction with the second electrode. The method can include filling a region between the first metal pillar and the second metal pillar with an insulating layer. In addition, the method can include separating the substrate from the semiconductor layer, and forming a second structure body in which the semiconductor layer is supported by the insulating layer and which is convex toward an opposite side of the insulating layer to the semiconductor layer.
摘要翻译： 根据一个实施例，公开了一种用于制造发光器件的方法。 该方法可以包括在包括在第一结构体中的半导体层上形成第一电极和第二电极，该半导体层包括在基板上的发光层。 该方法可以包括形成与第一电极导通的第一金属柱和与第二电极导通的第二金属柱。 该方法可以包括用绝缘层填充第一金属柱和第二金属柱之间的区域。 此外，该方法可以包括从半导体层分离衬底，以及形成第二结构体，其中半导体层被绝缘层支撑并且朝向绝缘层的与半导体层相反的一侧凸出。
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公开(公告)号：US20110297980A1
公开(公告)日：2011-12-08
申请号：US12886709
申请日：2010-09-21
申请人： Yoshiaki Sugizaki , Hideki Shibata , Akihiro Kojima , Masayuki Ishikawa , Hideo Tamura , Tetsuro Komatsu
发明人： Yoshiaki Sugizaki , Hideki Shibata , Akihiro Kojima , Masayuki Ishikawa , Hideo Tamura , Tetsuro Komatsu
CPC分类号： H01L33/0066 , H01L27/15 , H01L33/0075 , H01L33/0079 , H01L33/38 , H01L33/44 , H01L33/48 , H01L33/486 , H01L33/50 , H01L33/62 , H01L2924/0002 , H01L2933/0041 , H01L2933/005 , H01L2933/0066 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting chip and a fluorescent material layer. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a resin layer. The semiconductor layer includes a light emitting layer, a first major surface, and a second major surface formed on a side opposite to the first major surface. The fluorescent material layer is provided on the first major surface and has a larger planer size than the light emitting chip.
摘要翻译： 根据一个实施例，半导体发光器件包括发光芯片和荧光材料层。 发光芯片包括半导体层，第一电极，第二电极，绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和树脂层。 半导体层包括形成在与第一主表面相对的一侧上的发光层，第一主表面和第二主表面。 荧光材料层设置在第一主表面上，并且具有比发光芯片更大的平面尺寸。
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39.发明申请公开(公告)号：US20110073890A1
公开(公告)日：2011-03-31
申请号：US12726452
申请日：2010-03-18
IPC分类号： H01L33/44
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/38 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： A method for manufacturing a semiconductor light-emitting device of the invention includes: forming a semiconductor layer including a light-emitting layer and a first interconnect layer on a major surface of a temporary substrate; dividing the semiconductor layer and the first interconnect layer into a plurality of chips by a trench; collectively bonding each divided portion of the first interconnect layer of a plurality of chips to be bonded not adjacent to each other out of the plurality of chips on the temporary substrate to a second interconnect layer while opposing the major surface of the temporary substrate and the major surface of a supporting substrate forming the second interconnect layer, and collectively transferring a plurality of the bonded chips from the temporary substrate to the supporting substrate after irradiating interfaces between the bonded chips and the temporary substrate and separating the chips and the temporary substrate from each other.
摘要翻译： 本发明的半导体发光元件的制造方法包括：在临时衬底的主表面上形成包括发光层和第一互连层的半导体层; 通过沟槽将半导体层和第一互连层分成多个芯片; 将临时衬底上的多个芯片中彼此不相邻的多个芯片的每个分割部分的每个分割部分连接到第二互连层，同时与临时衬底的主表面和主要衬底相对 形成第二互连层的支撑基板的表面，并且在照射接合的芯片和临时基板之间的界面照射之后，将多个接合的芯片从临时基板共同转移到支撑基板，并将芯片和临时基板彼此分离 。
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40.发明申请公开(公告)号：US20100225000A1
公开(公告)日：2010-09-09
申请号：US12699301
申请日：2010-02-03
申请人： Yoshiaki Sugizaki , Akihiro Kojima
发明人： Yoshiaki Sugizaki , Akihiro Kojima
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L23/3114 , H01L21/76898 , H01L23/3171 , H01L23/4822 , H01L24/01 , H01L25/0657 , H01L25/50 , H01L2224/24145 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/76155 , H01L2224/92244 , H01L2225/06513 , H01L2225/06541 , H01L2225/06551 , H01L2924/01029 , H01L2924/1306 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device includes a semiconductor substrate including a wiring layer; electrode pads that are not provided on, above and below with the semiconductor substrate and are provided to be electrically connected with wiring lines included in the wiring layer; and a resin layer that is fixed to the semiconductor substrate and supports the electrode pads.
摘要翻译： 半导体器件包括：包括布线层的半导体衬底; 电极焊盘，其不设置在半导体衬底的上方和下方，并且被设置为与布线层中包括的布线电连接; 以及固定到半导体衬底并支撑电极焊盘的树脂层。
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