利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

117 条记录 (耗时 0.035 秒)

    Semiconductor light emitting device and method for manufacturing same
    1.
    发明授权
    Semiconductor light emitting device and method for manufacturing same 有权
    半导体发光器件及其制造方法

    公开(公告)号：US09153746B2

    公开(公告)日：2015-10-06

    申请号：US13601568

    申请日：2012-08-31

    申请人： Akihiro Kojima ,  Yosuke Akimoto ,  Hideyuki Tomizawa ,  Hideko Mukaida ,  Miyoko Shimada ,  Yoshiaki Sugizaki ,  Hideto Furuyama

    发明人： Akihiro Kojima ,  Yosuke Akimoto ,  Hideyuki Tomizawa ,  Hideko Mukaida ,  Miyoko Shimada ,  Yoshiaki Sugizaki ,  Hideto Furuyama

    IPC分类号： H01L33/52 ,  H01L33/00 ,  H01L33/38 ,  H01L21/50

    CPC分类号： H01L33/486 ,  H01L33/387 ,  H01L33/62

    摘要： According to an embodiment, a semiconductor light emitting device includes a semiconductor layer having a light emitting layer. The device also includes a p-side electrode provided on a first region including the light emitting layer; an n-side electrode provided on a second region layer not including the light emitting layer; and a first insulating film having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode. A p-side interconnection is provided on the first insulating film and electrically connected to the p-side electrode through the first opening. An n-side interconnection is provided on the first insulating film and electrically connected to the n-side electrode through the second opening. The p-side interconnection has a plurality of protrusive parts protruding toward the n-side interconnection, and the n-side interconnection has a plurality of portions extending between the protrusive parts of the p-side interconnection.

    摘要翻译： 根据实施例，半导体发光器件包括具有发光层的半导体层。 该装置还包括设置在包括发光层的第一区域上的p侧电极; 设置在不包括发光层的第二区域层上的n侧电极; 以及具有与p侧电极连通的第一开口的第一绝缘膜和与n侧电极连通的第二开口。 p侧互连设置在第一绝缘膜上，并通过第一开口与p侧电极电连接。 n侧互连设置在第一绝缘膜上，并通过第二开口与n侧电极电连接。 p侧互连具有向n侧互连突出的多个突出部，并且n侧互连具有在p侧互连的突出部之间延伸的多个部分。

    Semiconductor light emitting device
    3.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号：US08614455B2

    公开(公告)日：2013-12-24

    申请号：US13424687

    申请日：2012-03-20

    申请人： Susumu Obata ,  Kazuhito Higuchi ,  Hideo Nishiuchi ,  Akiya Kimura ,  Toshiya Nakayama ,  Yoshiaki Sugizaki ,  Akihiro Kojima ,  Yosuke Akimoto

    发明人： Susumu Obata ,  Kazuhito Higuchi ,  Hideo Nishiuchi ,  Akiya Kimura ,  Toshiya Nakayama ,  Yoshiaki Sugizaki ,  Akihiro Kojima ,  Yosuke Akimoto

    IPC分类号： H01L33/00

    CPC分类号： H01L33/62 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    摘要： According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.

    摘要翻译： 根据实施例，半导体发光器件包括层叠体，第一和第二电极，第一和第二互连，第一和第二柱以及第一绝缘层。 层叠体包括第一和第二半导体层和发光层。 第一和第二电极分别连接到第一和第二半导体层。 第一和第二互连分别连接到第一和第二电极。 第一和第二支柱分别连接到第一和第二互连。 第一绝缘层设置在互连和支柱上。 第一和第二支柱具有暴露在第一绝缘层的表面中的第一和第二监视器焊盘。 第一和第二互连具有暴露在与第一绝缘层的表面连接的侧面中的第一和第二接合焊盘。

    Semiconductor light emitting device and method for manufacturing same
    5.
    发明授权
    Semiconductor light emitting device and method for manufacturing same 有权
    半导体发光器件及其制造方法

    公开(公告)号：US08445916B2

    公开(公告)日：2013-05-21

    申请号：US12793943

    申请日：2010-06-04

    申请人： Akihiro Kojima ,  Yoshiaki Sugizaki

    发明人： Akihiro Kojima ,  Yoshiaki Sugizaki

    IPC分类号： H01L33/30 ,  H01L33/36 ,  H01L21/78

    CPC分类号： H01L33/405 ,  H01L33/0079 ,  H01L33/40 ,  H01L33/44 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/16

    摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating film, a first interconnection, a second interconnection, a barrier metal layer, a first metal pillar, a second metal pillar, and a resin. The semiconductor layer has a first major surface, a second major surface formed on an opposite side to the first major surface, and a light emitting layer. The first electrode is provided on the second major surface of the semiconductor layer. The second electrode is provided on the second major surface of the semiconductor layer and includes a silver layer. The insulating film is provided on the second major surface side of the semiconductor layer. The barrier metal layer is provided between the second electrode and the insulating film and between the second electrode and the second interconnection to cover the second electrode.

    摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，绝缘膜，第一互连，第二互连，阻挡金属层，第一金属柱，第二金属柱， 和树脂。 半导体层具有第一主表面，与第一主表面相反的一侧形成的第二主表面和发光层。 第一电极设置在半导体层的第二主表面上。 第二电极设置在半导体层的第二主表面上并且包括银层。 绝缘膜设置在半导体层的第二主表面侧。 阻挡金属层设置在第二电极和绝缘膜之间以及第二电极和第二互连之间以覆盖第二电极。

    Semiconductor light emitting device
    7.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号：US08368089B2

    公开(公告)日：2013-02-05

    申请号：US12885777

    申请日：2010-09-20

    申请人： Akihiro Kojima ,  Hiroshi Koizumi ,  Yoshiaki Sugizaki ,  Tomomichi Naka ,  Yasuhide Okada

    发明人： Akihiro Kojima ,  Hiroshi Koizumi ,  Yoshiaki Sugizaki ,  Tomomichi Naka ,  Yasuhide Okada

    IPC分类号： H01L29/18 ,  H01L33/00

    CPC分类号： H01L33/50 ,  H01L33/46 ,  H01L33/486 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light emitted by the light emitting layer and has a trench provided outside the outer circumference of the light emitting layer. The fluorescent material layer is provided in the trench and on the transparent layer. The fluorescent material layer includes a first fluorescent material particle provided in the trench and a second fluorescent material particle provided on the transparent layer. A particle size of the first fluorescent material particle is smaller than a width of the trench. A particle size of the second fluorescent material particle is larger than the width of the trench and larger than the particle size of the first fluorescent material particle.

    摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，透明层和荧光材料层。 透明层设置在半导体层的第一主表面上。 透明层相对于由发光层发射的光是透明的，并且具有设置在发光层的外周外的沟槽。 荧光材料层设置在沟槽和透明层上。 荧光材料层包括设置在沟槽中的第一荧光材料颗粒和设置在透明层上的第二荧光材料颗粒。 第一荧光体粒子的粒径小于沟槽的宽度。 第二荧光体粒子的粒径大于沟槽的宽度，大于第一荧光体粒子的粒径。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    9.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
    半导体发光器件

    公开(公告)号：US20110297969A1

    公开(公告)日：2011-12-08

    申请号：US12885777

    申请日：2010-09-20

    申请人： Akihiro Kojima ,  Hiroshi Koizumi ,  Yoshiaki Sugizaki ,  Tomomichi Naka ,  Yasuhide Okada

    发明人： Akihiro Kojima ,  Hiroshi Koizumi ,  Yoshiaki Sugizaki ,  Tomomichi Naka ,  Yasuhide Okada

    IPC分类号： H01L33/08 ,  H01L33/26

    CPC分类号： H01L33/50 ,  H01L33/46 ,  H01L33/486 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light emitted by the light emitting layer and has a trench provided outside the outer circumference of the light emitting layer. The fluorescent material layer is provided in the trench and on the transparent layer. The fluorescent material layer includes a first fluorescent material particle provided in the trench and a second fluorescent material particle provided on the transparent layer. A particle size of the first fluorescent material particle is smaller than a width of the trench. A particle size of the second fluorescent material particle is larger than the width of the trench and larger than the particle size of the first fluorescent material particle.

    摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，透明层和荧光材料层。 透明层设置在半导体层的第一主表面上。 透明层相对于由发光层发射的光是透明的，并且具有设置在发光层的外周外的沟槽。 荧光材料层设置在沟槽和透明层上。 荧光材料层包括设置在沟槽中的第一荧光材料颗粒和设置在透明层上的第二荧光材料颗粒。 第一荧光体粒子的粒径小于沟槽的宽度。 第二荧光体粒子的粒径大于沟槽的宽度，大于第一荧光体粒子的粒径。

    LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    10.
    发明申请
    LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    发光装置及其制造方法

    公开(公告)号：US20110297965A1

    公开(公告)日：2011-12-08

    申请号：US12888757

    申请日：2010-09-23

    申请人： Yosuke Akimoto ,  Ryuichi Togawa ,  Hiroshi Ito ,  Akihiro Kojima ,  Miyuki Iduka ,  Yoshiaki Sugizaki

    发明人： Yosuke Akimoto ,  Ryuichi Togawa ,  Hiroshi Ito ,  Akihiro Kojima ,  Miyuki Iduka ,  Yoshiaki Sugizaki

    IPC分类号： H01L33/00

    CPC分类号： H01L33/44 ,  H01L21/268 ,  H01L33/0079 ,  H01L33/40 ,  H01L33/50 ,  H01L2224/16

    摘要： According to one embodiment, a light-emitting device includes a semiconductor layer, first and second electrode portions, a first insulating film, and a metal layer. The semiconductor layer includes a first main surface, a second main surface on an opposite side to the first main surface, a third main surface connecting the first and second main surfaces, and a light-emitting layer. The first and second electrode portions are provided on the second main surface of the semiconductor layer. The first insulating film covers the second main surface of the semiconductor layer and the third main surface of the semiconductor layer. The metal layer is stacked on at least the second electrode portion of the first and the second electrode portions, and the metal layer extends until reaching a part of the first insulating film. The part is continuously extended from the first insulating film covering the third main surface.

    摘要翻译： 根据一个实施例，发光器件包括半导体层，第一和第二电极部分，第一绝缘膜和金属层。 半导体层包括第一主表面，与第一主表面相对的第二主表面，连接第一和第二主表面的第三主表面和发光层。 第一和第二电极部分设置在半导体层的第二主表面上。 第一绝缘膜覆盖半导体层的第二主表面和半导体层的第三主表面。 金属层至少堆叠在第一和第二电极部分的第二电极部分上，并且金属层延伸直到到达第一绝缘膜的一部分。 该部分从覆盖第三主表面的第一绝缘膜连续延伸。