公开(公告)号：US07692864B2

公开(公告)日：2010-04-06

申请号：US12403726

申请日：2009-03-13

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： G02B27/10

CPC分类号： G03B21/56 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1012

摘要： A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.

摘要翻译： 结晶方法包括将入射光束波前分割成多个光束，将波前划分的光束聚集在相移掩模的相应相移部分中或在相移部分附近以形成光束 具有在与相移掩模的相移部分相对应的点中光强度最小的逆峰值图案的光强度分布，以及用具有光的光束照射多晶半导体膜或非晶半导体膜 强度分布以产生结晶的半导体膜。

公开(公告)号：US07573200B2

公开(公告)日：2009-08-11

申请号：US10577979

申请日：2004-11-10

申请人： Shinichi Yamamoto ,  Mikihiko Nishitani ,  Yukihiro Morita

发明人： Shinichi Yamamoto ,  Mikihiko Nishitani ,  Yukihiro Morita

IPC分类号： H01J1/62 ,  H01J17/49

CPC分类号： H01J11/40 ,  H01J11/12

摘要： An object of the present invention is to reduce power consumption in a plasma display panel (PDP) by reducing the discharge firing voltage, while suppressing the occurrence of discharge variability when the PDP is driven, as well as ensuring the wall-charge holding performance of a protective film surface. To achieve this, a front panel of a PDP of the present invention has a catalyst layer dispersed on a surface of display electrodes formed in stripes on one side of a glass substrate, and needle crystals composed of graphite formed to stand upright on the catalyst layer. The needle crystals form a phase-separated structure with the materials of a dielectric film and a protective film.

摘要翻译： 本发明的目的是通过降低放电点火电压来降低等离子体显示面板（PDP）的功耗，同时抑制PDP驱动时的放电变化的发生，以及确保壁电荷保持性能 保护膜表面。 为了实现这一点，本发明的PDP的前面板具有分散在玻璃基板的一面上形成为条纹的显示电极的表面上的催化剂层，以及在催化剂层上直立形成的由石墨构成的针状晶体 。 针状晶体与介电膜和保护膜的材料形成相分离的结构。

公开(公告)号：US07572335B2

公开(公告)日：2009-08-11

申请号：US10958396

申请日：2004-10-06

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： C30B35/00

CPC分类号： H01L21/02678 ,  B23K26/066 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78675 ,  Y10S117/90 ,  Y10S117/904 ,  Y10S117/905 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A crystallization apparatus includes an illumination system which illuminates a phase-shift mask and an image-forming optical system arranged in an optical path between the phase-shift mask and a semiconductor film. The semiconductor film is irradiated with a light beam having a light intensity distribution of inverted peak patterns whose light intensity is the lowest in portions corresponding to phase shift sections to form a crystallized semiconductor film. The image-forming optical system is located to optically conjugate the phase-shift mask and the semiconductor film and has an aberration corresponding to the given wavelength range to form a light intensity distribution of inverted peak patterns with no swell of intensity in the middle portion.

摘要翻译： 结晶装置包括照射相移掩模的照明系统和布置在相移掩模和半导体膜之间的光路中的成像光学系统。 用对应于相移部分的部分的光强度最低的具有反相峰值图案的光强度分布的光束照射半导体膜，以形成结晶的半导体膜。 成像光学系统被定位为将相移掩模和半导体膜光学共轭，并且具有对应于给定波长范围的像差，以形成中间部分没有强度波动的反向峰值图案的光强度分布。

公开(公告)号：US07413608B2

公开(公告)日：2008-08-19

申请号：US11224014

申请日：2005-09-13

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： C30B25/12 ,  C30B25/14

CPC分类号： H01L29/78675 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0734 ,  G02B5/02 ,  G02B5/3083 ,  G03F1/28 ,  G03F1/34 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/66757 ,  Y10T117/10

摘要： A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.

摘要翻译： 结晶装置包括：向非单晶半导体膜施加用于结晶的照明光的照明系统;以及移相器，其包括设置成形成直边界的第一和第二区域，并将来自照明系统的照明光透过 第一相位相位差，并且对照明光进行相位调制，以提供具有光强度落在包含对应于边界的轴的非单晶半导体膜的区域中的反峰值图案的光强度分布。 移相器还包括从边界延伸到第一和第二区域中的至少一个区域的小区域，并相对于第一和第二区域中的至少一个透射照明光第二相位延迟。

公开(公告)号：US07118946B2

公开(公告)日：2006-10-10

申请号：US10508818

申请日：2003-03-04

申请人： Masato Hiramatsu ,  Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Yoshitaka Yamamoto

发明人： Masato Hiramatsu ,  Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Yoshitaka Yamamoto

IPC分类号： H01L21/00

CPC分类号： H01L29/78696 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78675

摘要： A thin film transistor includes a one conductive type semiconductor layer; a source region and a drain region which are separately provided in the semiconductor layer; and a gate electrode provided above or below the semiconductor layer with an insulating film interposed therebetween, wherein the width of the junction face between the source region and the channel which is provided between the source region and drain region, is different from the width of the junction face between the above channel region and the drain region.

摘要翻译： 薄膜晶体管包括一个导电型半导体层; 源极区和漏极区，分别设置在半导体层中; 以及设置在所述半导体层的上方或下方的绝缘膜的栅电极，其中，所述源极区域与设置在所述源极区域与漏极区域之间的所述沟道的接合面的宽度不同于 在上述沟道区域和漏极区域之间的接合面。

公开(公告)号：US20060213431A1

公开(公告)日：2006-09-28

申请号：US11442331

申请日：2006-05-30

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： C30B11/00 ,  C30B35/00

CPC分类号： G03B21/56 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1012

摘要： A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.

公开(公告)号：US07056626B2

公开(公告)日：2006-06-06

申请号：US10624555

申请日：2003-07-23

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： G01F9/00

CPC分类号： H01L21/0268 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/066 ,  B23K26/067 ,  B23K26/073 ,  G03F1/26 ,  H01L21/2026 ,  H01L27/1285 ,  Y10T117/1004

摘要： The present invention is directed to a crystallization apparatus including an illumination system to illuminate a phase shift mask, which converts a light beam from the illumination system into a light beam that has a light intensity distribution of an inverse peak pattern having a minimum intensity in an area corresponding to a phase shift portion of the phase shift mask. The crystallization apparatus further includes an optical member to form on a predetermined plane a light intensity distribution of a concave pattern, which has a light intensity that is minimum in an area corresponding to the phase shift portion and increases toward the circumference of that area based on the light from the illumination system, and an image-forming optical system to set a surface of the polycrystalline semiconductor film or the amorphous semiconductor film or its conjugate plane and the predetermined plane to an optical conjugate relationship.

摘要翻译： 本发明涉及一种结晶装置，其包括照明系统，用于照射相移掩模，该相移掩模将来自照明系统的光束转换成具有在具有最小强度的反峰值图案的光强度分布的光束 相应于相移掩模的相移部分的区域。 结晶装置还包括光学构件，以在预定平面上形成凹形图案的光强度分布，该凹形图案的光强度在与相移部分相对应的区域中最小，并且基于 来自照明系统的光，以及将多晶半导体膜或非晶半导体膜或其共轭面和预定平面的表面设定为光学共轭关系的成像光学系统。

公开(公告)号：US06946367B2

公开(公告)日：2005-09-20

申请号：US10366754

申请日：2003-02-13

申请人： Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Masayuki Jyumonji ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Fumiki Nakano

发明人： Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Masayuki Jyumonji ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Fumiki Nakano

IPC分类号： B23K26/06 ,  C30B1/00 ,  C30B13/00 ,  C30B13/24 ,  H01L21/20 ,  H01L21/268 ,  H01L21/322

CPC分类号： H01L21/02678 ,  B23K26/06 ,  B23K26/066 ,  B23K2101/40 ,  C30B1/00 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02691 ,  H01L21/2026 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1016

摘要： Methods for forming a single crystal semiconductor thin film layer from a non-single crystal layer includes directing a light source having a homogenized intensity distribution and a modulated amplitude towards the non-single crystal layer, and relatively moving the light with respect to the layer wherein the amplitude of the conditioned light is preferably increased in the direction of relative motion of the light to the layer. Preferred methods also include multiple light exposures in overlapping series to form ribbon-shaped single crystal regions, and providing a low temperature point in the semiconductor layer to generate a starting location for single crystalization.

摘要翻译： 从非单晶层形成单晶半导体薄膜层的方法包括将具有均匀强度分布和调制振幅的光源引向非单晶层，并相对于其相对移动光， 调节后的光的振幅优选在光的相对运动方向上增加。 优选的方法还包括重叠系列中的多次曝光以形成带状单晶区域，并且在半导体层中提供低温点以产生用于单晶化的起始位置。

公开(公告)号：US6023020A

公开(公告)日：2000-02-08

申请号：US950204

申请日：1997-10-14

申请人： Mikihiko Nishitani ,  Takayuki Negami ,  Naoki Kohara ,  Takahiro Wada ,  Yasuhiro Hashimoto

发明人： Mikihiko Nishitani ,  Takayuki Negami ,  Naoki Kohara ,  Takahiro Wada ,  Yasuhiro Hashimoto

IPC分类号： H01L31/032 ,  H01L31/0336

CPC分类号： H01L31/0749 ,  H01L31/0322 ,  Y02E10/541

摘要： A solar cell utilizing a chalcopyrite semiconductor and reducing the density of defects on the junction interface of pn junctions is provided. This solar cell includes a substrate, a back electrode formed on the substrate, a p-type chalcopyrite semiconductor thin film formed on the back electrode, an n-type semiconductor thin film formed so as to constitute a pn junction with the p-type chalcopyrite semiconductor thin film, and a transparent electrode formed on the n-type semiconductor thin film. A material having a higher resistivity than the p-type chalcopyrite semiconductor is formed between the p-type chalcopyrite semiconductor thin film and the n-type semiconductor thin film. A thin film made of this material may be formed by deposition from a solution. For example, CuInS.sub.2 is formed on the surface of a p-type chalcopyrite based semiconductor such as CuInSe.sub.2 by contacting the surface of the semiconductor with a solution in which a salt containing group IIIb elements, an organic substance containing group VIb elements and acid are mixed.

摘要翻译： 提供了利用黄铜矿半导体并降低pn结的结界面上的缺陷密度的太阳能电池。 该太阳能电池包括基板，形成在基板上的背面电极，形成在背面电极上的p型黄铜矿半导体薄膜，形成为与p型黄铜矿形成pn结的n型半导体薄膜 半导体薄膜和形成在n型半导体薄膜上的透明电极。 在p型黄铜矿半导体薄膜和n型半导体薄膜之间形成具有比p型黄铜矿半导体更高的电阻率的材料。 由该材料制成的薄膜可以通过从溶液中沉积而形成。 例如，通过使半导体的表面与含有IIIb族元素的盐，含有VIb族元素的有机物质和酸混合的溶液与CuInSe 2的p型黄铜矿类半导体的表面形成CuInS 2， 。

公开(公告)号：US5728231A

公开(公告)日：1998-03-17

申请号：US648497

申请日：1996-05-15

申请人： Takayuki Negami ,  Masaharu Terauchi ,  Mikihiko Nishitani ,  Takahiro Wada

发明人： Takayuki Negami ,  Masaharu Terauchi ,  Mikihiko Nishitani ,  Takahiro Wada

IPC分类号： C23C14/06 ,  C23C14/08 ,  C23C14/58 ,  H01L31/032 ,  H01L31/0336 ,  H01L31/18

CPC分类号： C23C14/5866 ,  C23C14/0623 ,  C23C14/08 ,  H01L31/0322 ,  H01L31/0323 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521 ,  Y10S438/93 ,  Y10T428/12528 ,  Y10T428/12611 ,  Y10T428/12681 ,  Y10T428/12903

摘要： A precursor for manufacturing a semiconductor thin film in which an oxide thin film comprising at least one element as a dopant, selected from a group which consists of Groups IA, IIA, IIB, VA, and VB elements, and Groups IB and IIIA elements which are main components of the semiconductor thin film are deposited on a substrate, or a precursor for manufacturing a semiconductor thin film which is formed by depositing a thin film of oxide comprising the Groups IB and IIIA elements on the substrate wherein the content of at least one of the Groups IB and IIIA elements is varied in the direction of film thickness, and a method for manufacturing a semiconductor thin film comprising the step of heat treating the precursor for manufacturing the semiconductor thin film in an atmosphere containing a Group VIA element. The present invention provides a precursor for manufacturing a semiconductor thin film and a method for manufacturing the semiconductor thin film using the precursor which are suitable for manufacturing a semiconductor thin film having a chalcopyrite structure that has a high and uniform energy conversion efficiency when the semiconductor thin film is used as a photoabsorptive layer of a solar cell.

摘要翻译： 用于制造半导体薄膜的前体，其中包含至少一种元素作为掺杂剂的氧化物薄膜，其选自由IA，IIA，IIB，VA和VB族元素组成的组以及IB和IIIA族元素， 半导体薄膜的主要成分沉积在基板上，或用于制造半导体薄膜的前体，该半导体薄膜是通过在衬底上沉积包含IB和IIIA族元素的氧化物的薄膜而形成的，其中至少一个 IB和IIIA族元素在膜厚方向上是不同的，以及一种制造半导体薄膜的方法，包括在含有VIA元素的气氛中对用于制造半导体薄膜的前体进行热处理的步骤。 本发明提供一种用于制造半导体薄膜的前体和使用该前体制造半导体薄膜的方法，该半导体薄膜适用于制造具有高半导体薄片的具有高且均匀的能量转换效率的黄铜矿结构的半导体薄膜 膜被用作太阳能电池的光吸收层。