公开(公告)号：US5112645A

公开(公告)日：1992-05-12

申请号：US622275

申请日：1990-12-06

申请人： Makoto Sekine ,  Haruo Okano ,  Yasuhiro Horiike

发明人： Makoto Sekine ,  Haruo Okano ,  Yasuhiro Horiike

IPC分类号： H01L21/205 ,  C23C16/48 ,  C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/312 ,  H01L21/3213

CPC分类号： C23C16/483 ,  C23C16/482 ,  C23F4/00 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/312 ,  H01L21/32137 ,  H01L21/32139

摘要： A phototreating method comprises the steps of introducing a photoreactive gas into a chamber housing a workpiece, emitting first light substantially perpendicularly to a surface of the workpiece, and emitting second light substantially perpendicularly to the surface of the workpiece simultaneously with or after radiation of the first light. The surface of the workpiece is coated utilizing a photochemical reaction of the photoreactive gas caused by radiation of the first light and the second light.

公开(公告)号：US5888338A

公开(公告)日：1999-03-30

申请号：US827439

申请日：1997-03-27

申请人： Hiromi Harada ,  Sinji Kubota ,  Hiromi Kumagai ,  Junichi Arami ,  Keiji Horioka ,  Isahiro Hasegawa ,  Haruo Okano ,  Katsuya Okumura ,  Yukimasa Yoshida

发明人： Hiromi Harada ,  Sinji Kubota ,  Hiromi Kumagai ,  Junichi Arami ,  Keiji Horioka ,  Isahiro Hasegawa ,  Haruo Okano ,  Katsuya Okumura ,  Yukimasa Yoshida

IPC分类号： H01J37/32 ,  H01J37/34 ,  H01L21/302

CPC分类号： H01J37/32623 ,  H01J37/3266 ,  H01J37/3408 ,  H01J37/3452 ,  H01J37/3494 ,  H01J2237/3344

摘要： The invention provides a novel magnetron plasma processing apparatus comprising the following, a vacuum chamber storing an etching object, the first electrode which is provided in the vacuum chamber and holds the etching object, the second electrode which is disposed in opposition from the first electrode, where the first and second electrodes are in parallel with each other, a gas-supply unit feeding etching gas to the vacuum chamber, a magnetic-field generating means which is disposed on the part opposite from the first electrode in opposition from the second electrode, and a power-supply unit which feeds power to either of these first and second electrodes and generates discharge between these parallel electrodes. Magnetic-field generating means is provided with a magnetic block whose both-end surfaces are provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between both-end surfaces of the magnetic block.

摘要翻译： 本发明提供了一种新颖的磁控管等离子体处理装置，其特征在于包括：存储蚀刻对象的真空室，设置在真空室中并保持蚀刻对象物的第一电极，与第一电极相对配置的第二电极， 其中所述第一和第二电极彼此平行;供给单元，向所述真空室供给蚀刻气体;磁场产生装置，设置在与所述第一电极相对的与所述第二电极相对的部分上; 以及向这些第一和第二电极中的任一个供电的电源单元，并在这些平行电极之间产生放电。 磁场产生装置设置有磁性块，其两端表面设置有彼此极性相反的磁极，此外，与磁体的两端面之间设置与第二电极相对的平面凹部 块。

公开(公告)号：US5620815A

公开(公告)日：1997-04-15

申请号：US471782

申请日：1995-06-06

申请人： Shinichi Ito ,  Haruo Okano ,  Toru Watanabe ,  Katsuya Okumura

发明人： Shinichi Ito ,  Haruo Okano ,  Toru Watanabe ,  Katsuya Okumura

IPC分类号： G03F1/00 ,  G03F1/26 ,  G03F1/32 ,  G03F9/00

CPC分类号： G03F1/32 ,  G03F1/26

摘要： An exposure mask having an excellent alignment accuracy between patterns, which is prepared by first forming on a light transmissive substrate a light shielding film or a semi-transparent film pattern (first pattern) somewhat larger than a desired dimension, forming thereon a semi-transparent film or a light transmissive film pattern (second pattern) so as to include all patterns of the desired dimensions made up of a light shielding part, a semi-transparent part and a light transmissive part, and then removing a projected part of the first pattern with use of the second pattern as a mask.The semi-transparent film is formed of at least two layers each of which contains a common element, thus the semi-transparent film can be made with use of the same apparatus and when patterning, etching process can be carried out with use of the same etchant.Further, since in a mask including the semi-transparent pattern, at least that area of a non-pattern zone where light reaches a wafer through the transfer, acts to shield the exposure light, too narrowed pattern or insufficient focal depth can be prevented.

摘要翻译： 通过首先在透光性基板上形成稍大于所需尺寸的遮光膜或半透明膜图案（第一图案）而制成的图案之间具有优异的取向精度的曝光掩模，在其上形成半透明 膜或透光膜图案（第二图案），以便包括由遮光部分，半透明部分和透光部分组成的所需尺寸的所有图案，然后去除第一图案的突出部分 使用第二种图案作为掩模。 半透明膜由至少两层形成，每层均含有共同的元素，因此可以使用相同的装置制造半透明膜，并且当图案化时，可以使用它们进行蚀刻工艺 蚀刻剂 此外，由于在包括半透明图案的掩模中，至少通过转印光到达晶片的非图案区域的面积起到屏蔽曝光光的作用，可以防止太窄的图案或不充分的焦深。

公开(公告)号：US5385763A

公开(公告)日：1995-01-31

申请号：US203757

申请日：1994-03-01

申请人： Haruo Okano ,  Sadahisa Noguchi ,  Makoto Sekine

发明人： Haruo Okano ,  Sadahisa Noguchi ,  Makoto Sekine

IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/44 ,  C23C16/46 ,  H01L21/205 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  B05D3/06

CPC分类号： H01L21/02274 ,  C23C16/045 ,  C23C16/402 ,  C23C16/44 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02277 ,  H01L21/02337 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/3185 ,  H01L21/76879 ,  Y10S148/05

摘要： A thin film forming method comprises the steps of supporting a semiconductor substrate having a trench or an unevenness thereon in a reaction vessel; introducing a reactive gas into the vessel; activating the reactive gas to form a deposit species, the deposit species characterized by a phase diagram including a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point; and forming a thin film containing at least part of the deposit species on the substrate while retaining a pressure in the vessel higher than the triple point of the phase diagram of the deposit species, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of the deposit species.

摘要翻译： 薄膜形成方法包括以下步骤：在反应容器中支撑具有沟槽或凹凸的半导体衬底; 将反应性气体引入容器中; 激活反应气体以形成沉积物，所述沉积物质的特征在于包括由三维点相交的熔解曲线和蒸发曲线限定的液相区域的相图; 以及在所述衬底上形成含有至少部分沉积物的薄膜，同时保持在所述容器中的压力高于所述沉积物种的相图的三重点，并且将所述衬底的温度保持在 沉积物种的相图。

公开(公告)号：US5310454A

公开(公告)日：1994-05-10

申请号：US26042

申请日：1993-03-04

申请人： Tokuhisa Ohiwa ,  Hisataka Hayashi ,  Keiji Horioka ,  Haruo Okano ,  Takaya Matsushita ,  Isahiro Hasegawa ,  Akira Takeuchi

发明人： Tokuhisa Ohiwa ,  Hisataka Hayashi ,  Keiji Horioka ,  Haruo Okano ,  Takaya Matsushita ,  Isahiro Hasegawa ,  Akira Takeuchi

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L21/31116

摘要： A dry etching method by a plasma etching forms a mask pattern, having an opening up to 1 .mu.m width on a silicon oxide layer formed on a silicon substrate. The substrate is laced into a reactive chamber having an etching gas introducing means and fluorocarbon gas and hydrogen gas as the etching gas are introduced such that a ratio of the hydrogen gas to the gas mixture satisfies 50% to 80%. The plasma is generated, and by using the plasma etching, the silicon oxide layer is etched according to the mask pattern to form an opening having an aspect ratio of more than 1 in the silicon oxide layer.

摘要翻译： 通过等离子体蚀刻的干蚀刻方法形成在硅基板上形成的氧化硅层上具有至多1μm宽的开口的掩模图案。 衬底被引入具有蚀刻气体引入装置的反应室和碳氟化合物气体和氢气作为蚀刻气体，使得氢气与气体混合物的比率满足50％至80％。 产生等离子体，并且通过使用等离子体蚀刻，根据掩模图案蚀刻氧化硅层，以在氧化硅层中形成长径比大于1的开口。

公开(公告)号：US5258332A

公开(公告)日：1993-11-02

申请号：US29307

申请日：1993-03-08

申请人： Keiji Horioka ,  Haruo Okano ,  Hirotaka Nishino

发明人： Keiji Horioka ,  Haruo Okano ,  Hirotaka Nishino

IPC分类号： H01L21/3065 ,  H01L21/308 ,  H01L21/334 ,  H01L21/311

CPC分类号： H01L29/66181 ,  H01L21/3065 ,  H01L21/308 ,  Y10S438/978

摘要： A method for rounding the corners of trench formed on the silicon substrate with metal, metal silicide or polycrystalline silicon thin film or the step portions of lead layers is provided. The steps of rounding are performed by chemical dry etching using a gas mixture of fluorine and oxygen. The abundance ratio of oxygen is determined to be one or more with respect to the fluorine. This method contributes significantly to the prevention of leakage current and the enhancement of insulating effect in the case of forming trench capacitors or the like.

摘要翻译： 提供了一种用金属，金属硅化物或多晶硅薄膜或者导电层的台阶部分在硅衬底上形成的沟槽的四角倒角的方法。 舍入的步骤通过使用氟和氧的气体混合物的化学干蚀刻进行。 相对于氟，氧的丰度比被确定为一个或多个。 在形成沟槽电容器等的情况下，该方法有助于防止漏电流和绝缘效果的提高。

公开(公告)号：US5236562A

公开(公告)日：1993-08-17

申请号：US672237

申请日：1991-03-20

申请人： Katsuya Okumura ,  Haruo Okano ,  Manabu Tsujimura ,  Akio Shibata

发明人： Katsuya Okumura ,  Haruo Okano ,  Manabu Tsujimura ,  Akio Shibata

IPC分类号： B01J3/00 ,  B01J3/02 ,  B01J12/00 ,  B01J19/08 ,  B01J19/12 ,  C01B5/00 ,  C01B7/01 ,  C01B7/19

CPC分类号： B01J19/123 ,  B01J12/00 ,  B01J19/08 ,  B01J3/006 ,  C01B5/00 ,  C01B7/012 ,  C01B7/191

摘要： A method and apparatus for discharging hydrogen from a vacuum vessel using a roughing vacuum pump and a turbo-molecular pump. During discharge of hydrogen from the vacuum vessel, a material which has excellent reactivity with hydrogen, such as a material which has been excited or ionized by microwave or laser radiation, is introduced into the exhaust system. The material reacts with hydrogen to convert hydrogen into another substance of large molecular weight, whereby the evacuating performance of the vacuum exhaust system is improved with respect to discharging of hydrogen.

公开(公告)号：US4838978A

公开(公告)日：1989-06-13

申请号：US123353

申请日：1987-11-20

申请人： Makoto Sekine ,  Haruo Okano ,  Tsunetoshi Arikado ,  Yasuhiro Horiike

发明人： Makoto Sekine ,  Haruo Okano ,  Tsunetoshi Arikado ,  Yasuhiro Horiike

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/00 ,  H01L21/3065

CPC分类号： H01L21/67069 ,  H01J37/32431

摘要： A dry etching apparatus which includes an anode located at an upper side and a cathode located at a lower side which face each other in a vacuum vessel. A high-frequency power can be applied across the anode and the cathode. A flange section extends from the inner wall of the vacuum vessel, and is located between the anode and the cathode. A semiconductor wafer can be placed on the cathode through a tray. The cathode is moved toward the anode together with the tray and the wafer. When the edge portion of the tray abuts against the flange section, the interior of the vacuum vessel is partitioned into an etching chamber and the other chamber. A magnetic field is applied to the etching chamber from outside the vacuum vessel, and an etching gas is also introduced into the etching chamber. When the etching gas is introduced, the interior of the etching chamber is evacuated to be maintained at a predetermined pressure.

摘要翻译： 一种干蚀刻装置，其包括位于上侧的阳极和位于真空容器中彼此面对的下侧的阴极。 可以在阳极和阴极之间施加高频功率。 凸缘部分从真空容器的内壁延伸，并位于阳极和阴极之间。 可以通过托盘将半导体晶片放置在阴极上。 阴极与托盘和晶片一起向阳极移动。 当托盘的边缘部分抵靠凸缘部分时，真空容器的内部被分隔成蚀刻室和另一个室。 从真空容器的外部向蚀刻室施加磁场，蚀刻气体也被引入蚀刻室。 当蚀刻气体被引入时，蚀刻室的内部被抽真空以保持在预定的压力。

公开(公告)号：US4786361A

公开(公告)日：1988-11-22

申请号：US22368

申请日：1987-03-05

申请人： Makoto Sekine ,  Haruo Okano ,  Yasuhiro Horiike

发明人： Makoto Sekine ,  Haruo Okano ,  Yasuhiro Horiike

IPC分类号： H01J37/32 ,  H01L21/308 ,  B44C1/22

CPC分类号： H01J37/32623 ,  H01J37/3266 ,  H01L21/3085

摘要： A process is disclosed which etches a workpiece, with an etching mask of a predetermined pattern formed on the surface of the workpiece, on an apparatus which includes a container for holding first and second electrodes opposite to each other and a magnetic field generator arranged on a side opposite to that side of the second electrode where the second electrode faces the first electrode, which comprises placing the workpiece on the first electrode, supplying a feed gas into the container, evacuating air in the container to set pressure in the container at a level of 10.sup.-2 torrs, and applying high frequency power across the first and second electrodes to yield plasma whereby the workpiece is etched.

摘要翻译： 公开了一种工艺，在工件的表面上刻蚀具有预定图案的蚀刻掩模的工件，该设备包括用于保持彼此相对的第一和第二电极的容器和布置在工件上的磁场发生器 所述第二电极与所述第二电极的面对所述第一电极的所述一侧相反，所述第二电极包括将所述工件放置在所述第一电极上，将进料气体供应到所述容器中，抽空所述容器中的空气以将所述容器中的压力设定在一定水平 为10-2托，并且通过第一和第二电极施加高频电力以产生等离子体，从而蚀刻工件。

公开(公告)号：US4642171A

公开(公告)日：1987-02-10

申请号：US756318

申请日：1985-07-18

申请人： Makoto Sekine ,  Haruo Okano ,  Yasuhiro Horiike

发明人： Makoto Sekine ,  Haruo Okano ,  Yasuhiro Horiike

IPC分类号： H01L21/205 ,  B01J19/12 ,  C23C16/48 ,  C23F1/12 ,  C23F4/00 ,  G03F7/004 ,  H01L21/302 ,  H01L21/31 ,  C23C15/00

CPC分类号： C23C16/483 ,  B01J19/12 ,  C23F4/00 ,  G03F7/0041

摘要： A phototreating apparatus has a vacuum container for storing a solid material, a gas inlet for introducing a photoreactive gas into the container, and a light source for radiating into the container, light having a specific wavelength such that it causes a photoreaction of the photoreactive gas. The apparatus phototreats the solid material in the container by utilizing the photoreaction of the photoreactive gas. At least an inner surface of the vacuum container consists of a material which absorbs the light having the specific wavelength.

摘要翻译： 光固化装置具有用于储存固体材料的真空容器，用于将光反应性气体引入容器的气体入口和用于辐射到容器中的光源，具有特定波长的光，使得其引起光反应气体的光反应 。 该设备通过利用光反应性气体的光反应来对容器中的固体材料进行照射。 至少真空容器的内表面由吸收特定波长的光的材料构成。