公开(公告)号：US07663104B2

公开(公告)日：2010-02-16

申请号：US12038079

申请日：2008-02-27

申请人： Tomoharu Obuki ,  Hiroshi Toyama ,  Yasuhiro Mitsui ,  Munetoshi Fukui ,  Yasuhiko Nara ,  Tohru Ando ,  Katsuo Ooki ,  Tsutomu Saito ,  Masaaki Komori

发明人： Tomoharu Obuki ,  Hiroshi Toyama ,  Yasuhiro Mitsui ,  Munetoshi Fukui ,  Yasuhiko Nara ,  Tohru Ando ,  Katsuo Ooki ,  Tsutomu Saito ,  Masaaki Komori

IPC分类号： G01N23/00 ,  G21K7/00 ,  G01R31/302 ,  G01R31/305

CPC分类号： G01N23/225 ,  H01J2237/2449 ,  H01J2237/24564 ,  H01J2237/2817

摘要： An object of the present invention is to obtain a clear absorbed current image without involving the difference in gain of amplifier between inputs, from absorbed currents detected by using a plurality of probes and to improve measurement efficiency.In the present invention, a plurality of probes are brought in contact with a specimen. While irradiating the specimen with an electron beam, currents flowing in the probes are measured. Signals from at least two probes are input to a differential amplifier. An output of the differential amplifier is amplified. On the basis of the amplified output and scanning information of the electron beam, an absorbed current image is generated. According to the invention, a clear absorbed current image can be obtained without involving the difference in gain of amplifier between inputs. Thus, measurement efficiency in a failure analysis of a semiconductor device can be improved.

摘要翻译： 本发明的目的是获得清晰的吸收电流图像，而不涉及放大器在输入之间的增益差异，从吸收的电流通过使用多个探针检测并提高测量效率。 在本发明中，多个探针与试样接触。 在用电子束照射样品的同时，测量在探针中流动的电流。 至少两个探头的信号被输入到差分放大器。 差分放大器的输出被放大。 基于电子束的放大输出和扫描信息，产生吸收的当前图像。 根据本发明，可以获得清晰的吸收电流图像而不涉及放大器在输入之间的增益差。 因此，可以提高半导体器件的故障分析中的测量效率。

公开(公告)号：US20080067385A1

公开(公告)日：2008-03-20

申请号：US11980654

申请日：2007-10-31

申请人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

发明人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

IPC分类号： G21K5/08 ,  G01N23/225

CPC分类号： H04L29/06 ,  G01N23/225 ,  H01J37/256 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/31745 ,  H04L67/16 ,  H04L69/329

摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

公开(公告)号：US07205560B2

公开(公告)日：2007-04-17

申请号：US11127240

申请日：2005-05-12

申请人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

发明人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

IPC分类号： H01J37/256 ,  G21K7/00

CPC分类号： H04L29/06 ,  G01N23/225 ,  H01J37/256 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/31745 ,  H04L67/16 ,  H04L69/329

摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

公开(公告)号：US07130063B2

公开(公告)日：2006-10-31

申请号：US11102703

申请日：2005-04-11

申请人： Yasuhiro Mitsui ,  Yasutsugu Usami ,  Isao Kawata ,  Yuya Toyoshima ,  Tadashi Otaka ,  Nobuyuki Iriki

发明人： Yasuhiro Mitsui ,  Yasutsugu Usami ,  Isao Kawata ,  Yuya Toyoshima ,  Tadashi Otaka ,  Nobuyuki Iriki

IPC分类号： G01B11/04

CPC分类号： H01L22/34

摘要： A test pattern formed in a scribe line area of a wafer is irradiated with a light beam to measure the width thereof; the test pattern is irradiated with an electron beam so as to measure the width thereof; an amount of change in the width of the test pattern is calculated; a dummy pattern having the same width as that of a semiconductor device of the wafer is irradiated with an electron beam to measure the width thereof; and the width of a pattern is estimated by the use of the calculated amount of width change so as to determine the shape of the pattern. Thus, a shape measuring system and method capable of determining the shape of a micropattern in a semiconductor device without changing the dimensions of the micropattern can be provided.

公开(公告)号：US06881597B2

公开(公告)日：2005-04-19

申请号：US10051056

申请日：2002-01-22

申请人： Kyoichiro Asayama ,  Yasuhiro Mitsui ,  Fumiko Arakawa ,  Shiro Kamohara ,  Yuzuru Ohji

发明人： Kyoichiro Asayama ,  Yasuhiro Mitsui ,  Fumiko Arakawa ,  Shiro Kamohara ,  Yuzuru Ohji

IPC分类号： G01R31/28 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/66 ,  H01L21/822 ,  H01L23/52 ,  H01L23/544 ,  H01L27/04 ,  H01L21/00

CPC分类号： H01L22/34 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： Disclosed is a technique capable of improving a yield of a semiconductor device by measuring a plurality of TEGs arranged in a scribe region. A first electrode pad connected to each terminal of a TEG is formed as a rectangular, minute, isolated pattern having a side length of about 0.5 μm or shorter and constituted of an uppermost layer wiring on a semiconductor substrate, and therefore, a great number of TEGs can be laid in a first scribe region. The characteristic evaluation or the failure analysis is performed by contacting a nanoprobe having a tip radius of curvature of 0.05 μm to 0.8 μm to the first electrode pad.

摘要翻译： 公开了一种能够通过测量布置在划线区域中的多个TEG来提高半导体器件的产量的技术。 连接到TEG的每个端子的第一电极焊盘形成为具有约0.5μm或更短的侧边长度并由半导体衬底上的最上层布线构成的矩形，微小隔离图案，因此，大量 TEG可以放在第一个划痕区域。 特征评估或故障分析是通过将具有0.05μm至0.8μm的尖端曲率半径的纳米探针接触到第一电极焊盘来进行的。

公开(公告)号：US6120227A

公开(公告)日：2000-09-19

申请号：US348418

申请日：1999-07-07

申请人： Yoshihiro Murase ,  Yoshiyasu Ito ,  Yasuhiro Mitsui

发明人： Yoshihiro Murase ,  Yoshiyasu Ito ,  Yasuhiro Mitsui

IPC分类号： F16B35/00 ,  F16B35/04 ,  F16B25/00

CPC分类号： F16B35/041

摘要： Disclosed is a bolt which has been contemplated to solve problems of prior bolts and to provide the bolt adapted to corrects its own position in a precise direction to permit normal fastening without failure such as slipping, seizure or the like even when the bolt is inserted slantingly into a mating female screw. The bolt comprises a constant diameter columnar portion having a smaller diameter than that of a bolt shank portion and formed on an end portion of the bolt shank portion, formed with normal screw threads, in a direction of insertion with a short tapered portion therebetween, and complete screw threads formed on the constant diameter columnar portion to be equal in pitch and thread groove depth to the normal screw threads on the bolt shank portion.

摘要翻译： 公开了一种螺栓，其已经被设想来解决现有螺栓的问题，并且提供适于在精确方向上校正其自身位置的螺栓，以允许正常的紧固而没有诸如滑动，卡住或类似的故障，即使当螺栓被倾斜地插入 成为配合的内螺纹。 该螺栓包括直径比直径小于螺栓柄部分直径的柱状部分，并且形成在螺栓柄部分的端部上，该螺栓柄部分在其间具有短锥形部分的插入方向上形成有普通螺纹，以及 形成在恒定直径柱状部分上的完整螺纹螺纹相等，螺纹槽深度与螺栓柄部分上的普通螺纹相等。

公开(公告)号：US6051834A

公开(公告)日：2000-04-18

申请号：US126432

申请日：1998-07-30

申请人： Hiroshi Kakibayashi ,  Yasuhiro Mitsui ,  Hideo Todokoro ,  Katsuhiro Kuroda ,  Masanari Koguchi ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Mikio Ichihashi ,  Shigeto Isakozawa ,  Ruriko Tsuneta ,  Kuniyasu Nakamura ,  Kensuke Sekihara ,  Jun Motoike

发明人： Hiroshi Kakibayashi ,  Yasuhiro Mitsui ,  Hideo Todokoro ,  Katsuhiro Kuroda ,  Masanari Koguchi ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Mikio Ichihashi ,  Shigeto Isakozawa ,  Ruriko Tsuneta ,  Kuniyasu Nakamura ,  Kensuke Sekihara ,  Jun Motoike

IPC分类号： H01J37/26 ,  H01J37/28

CPC分类号： H01J37/28 ,  H01J2237/226 ,  H01J2237/2802 ,  H01J2237/2807

摘要： 3-dimensional observation on the atomic arrangement and atomic species in a thin-film specimen are carried out at high speed and accuracy by an electron microscope which measures electrons emitted at high angle from the specimen. A scanning transmission electron microscope has an electron detection device comprising a scintillator converting electrons detected thereby to photons, a photoconductive-film converting photons from the scintillator detected thereby to c.a. 1000 times as many electron-hole pairs as these photons.

摘要翻译： 通过电子显微镜高速准确地进行薄膜样品中的原子排列和原子物质的三维观察，该电子显微镜测量从试样以高角度发射的电子。 扫描透射电子显微镜具有电子检测装置，该电子检测装置包括将由此检测的电子转化为光子的闪烁体，从其检测的闪烁体的光电导膜转换光子至c.a. 这些光子是电子 - 空穴对的1000倍。

公开(公告)号：US5594246A

公开(公告)日：1997-01-14

申请号：US430535

申请日：1995-04-25

申请人： Yoshimi Sudo ,  Tokuo Kure ,  Ken Ninomiya ,  Katsuhiro Kuroda ,  Takashi Nishida ,  Hideo Todokoro ,  Yasuhiro Mitsui ,  Hiroyasu Shichi

发明人： Yoshimi Sudo ,  Tokuo Kure ,  Ken Ninomiya ,  Katsuhiro Kuroda ,  Takashi Nishida ,  Hideo Todokoro ,  Yasuhiro Mitsui ,  Hiroyasu Shichi

IPC分类号： G01N23/225 ,  H01J37/252 ,  G01N23/223

CPC分类号： G01N23/2252 ,  H01J37/252 ,  H01J2237/2445

摘要： An X-ray analyzing method includes the steps of applying an irradiated electron beam, converged by a condenser lens and an objective lens into a thin beam, to the inside of a fine hole existing on the surface of a sample; observing X-rays generated from a residual substance existing inside the fine hole; and performing a qualitative and quantitative analysis of the residual substance. The X-rays are observed by an X-ray detector installed in an internal space of the condenser lens, an internal space of the objective lens, or between the condenser lens and the objective lens, by detecting only the X-rays radiated within the angular range -.theta. to +.theta., where .theta. is an angle formed with a center axis of the electron beam, and so defined that tan .theta. is substantially equal to a/d, where a and d are the radius and the depth of the fine hole, respectively.

摘要翻译： X射线分析方法包括以下步骤：将由聚光透镜和物镜会聚的照射的电子束施加到薄的光束中，使其存在于样品表面上的细孔的内部; 观察由存在于细孔内的残留物质产生的X射线; 并对剩余物质进行定性和定量分析。 X射线由安装在聚光透镜的内部空间，物镜的内部空间或者聚光透镜与物镜之间的X射线检测器观测，仅检测在该透镜内辐射的X射线 角度范围-θ至+θ，其中θ是与电子束的中心轴形成的角度，并且如此定义为tanθ基本上等于a / d，其中a和d是微细的半径和深度 孔。

公开(公告)号：US5278408A

公开(公告)日：1994-01-11

申请号：US882970

申请日：1992-05-14

申请人： Hiroshi Kakibayashi ,  Yasuhiro Mitsui ,  Hideo Todokoro ,  Katsuhiro Kuroda

发明人： Hiroshi Kakibayashi ,  Yasuhiro Mitsui ,  Hideo Todokoro ,  Katsuhiro Kuroda

IPC分类号： H01J37/20 ,  G01N23/04 ,  G01Q30/02 ,  G01Q60/10 ,  G01Q80/00 ,  G01R31/305 ,  H01J37/22 ,  H01J37/244 ,  H01J37/28 ,  H01J37/26

CPC分类号： G01R31/305 ,  G01N23/046 ,  G01N2223/419 ,  H01J2237/226

摘要： 3-dimensional observation is carried out on the atomic arrangement and atomic species in a thin-film specimen at an atomic level in order to clarify the existence states of defects and impure atoms in the crystals. For that purposes, the present invention provides an instrument and a method for 3-dimensional observation of an atomic arrangement which are implemented by a system comprising a scanning transmission electron microscope equipped with a field emission electron gun operated at an acceleration voltage of greater than 200 kV, a specimen goniometer/tilting system having a control capability of the nanometer order, a multi-channel electron detector and a computer for executing software for controlling these components and 3-dimensional image-processing software. Point defects and impure atoms, which exist in joint interfaces and contacts in a ULSI device, can thereby be observed. As a result, the causes of bad devices such as current leak and poor voltage resistance can be analyzed at a high accuracy.

摘要翻译： 在原子水平上对薄膜样品中的原子排列和原子种进行3维观察，以澄清晶体中缺陷和不纯原子的存在状态。 为此目的，本发明提供了一种用于三维观察原子排列的仪器和方法，其由包括扫描透射电子显微镜的系统实现，所述扫描透射电子显微镜配备有以大于200的加速电压操作的场致发射电子枪 kV，具有纳米级控制能力的样本测角器/倾斜系统，多通道电子检测器和用于执行用于控制这些部件和3维图像处理软件的软件的计算机。 因此可以观察到存在于ULSI装置中的接合界面和接触中的点缺陷和不纯的原子。 结果，可以高精度地分析诸如电流泄漏和差的耐电压性差的装置的原因。

公开(公告)号：US4769540A

公开(公告)日：1988-09-06

申请号：US924640

申请日：1986-10-30

申请人： Yasuhiro Mitsui ,  Osami Okada

发明人： Yasuhiro Mitsui ,  Osami Okada

IPC分类号： G01N27/62 ,  H01J49/04 ,  H01J49/10 ,  H01J49/12 ,  H01J49/14

CPC分类号： H01J49/24 ,  H01J49/145

摘要： An atmospheric pressure ionization mass spectrometer which comprises an ion source for ionizing a sample gas, a low pressure region provided with a mass filter and a collector therein, a differential pumping region provided between the ion source and the low pressure region and with electrodes provided on the side of the ion source and on the side of the low pressure region, respectively, and a pressure-gradient electrode means for dissociation and removal of cluster ions, as connected to the electrode on the side of the ion source among the electrodes provided in the differential pumping region is disclosed.

摘要翻译： 一种大气压电离质谱仪，其包括用于离子化样品气体的离子源，设置有质量过滤器的低压区域和集尘器，设置在离子源和低压区域之间的差分泵浦区域以及设置在 离子源的侧面和低压区域的一侧，以及用于离解和去除簇离子的压力梯度电极装置，其连接到设置在电极中的电极之间的离子源侧的电极 公开了差分泵浦区域。