公开(公告)号：US20240105571A1

公开(公告)日：2024-03-28

申请号：US17954288

申请日：2022-09-27

Applicant: Intel Corporation

Inventor： Brandon C. MARIN ,  Haobo CHEN ,  Bai NIE ,  Srinivas V. PIETAMBARAM ,  Gang DUAN ,  Jeremy D. ECTON ,  Suddhasattwa NAD

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L23/49827 ,  H01L21/486 ,  H01L23/49894 ,  H01L23/15

Abstract: Embodiments disclosed herein include glass cores and methods of forming glass cores. In an embodiment, a core for an electronic package comprises a substrate with a first surface and a second surface opposite from the first surface, where the substrate comprises glass, In an embodiment, a via opening is provided through the substrate, and a diffusion layer is along the first surface, the second surface, and the via opening.

公开(公告)号：US20240097079A1

公开(公告)日：2024-03-21

申请号：US17949857

申请日：2022-09-21

Applicant: Intel Corporation

Inventor： Brandon C. MARIN ,  Khaled AHMED ,  Srinivas V. PIETAMBARAM ,  Hiroki TANAKA ,  Paul WEST ,  Kristof DARMAWIKARTA ,  Gang DUAN ,  Jeremy D. ECTON ,  Suddhasattwa NAD

IPC: H01L33/48 ,  H01L25/075 ,  H01L33/00 ,  H01L33/32 ,  H01L33/62

CPC classification number: H01L33/486 ,  H01L25/0753 ,  H01L33/0075 ,  H01L33/32 ,  H01L33/62 ,  H01L2933/0066

Abstract: Integrated circuit (IC) packages are disclosed. In some embodiments, an IC package includes a glass substrate, a micro light emitting diode (LED), a semiconductor die, one or more through glass vias (TGVs) and a package substrate. The micro LED is positioned over the glass substrate. The TGVs are integrated into the glass substrate and connect the micro LED to the semiconductor die. The semiconductor die is connected to the package substrate to receive external signals when connected to a motherboard.

公开(公告)号：US20240087971A1

公开(公告)日：2024-03-14

申请号：US17943915

申请日：2022-09-13

Applicant: Intel Corporation

Inventor： Brandon C. MARIN ,  Gang DUAN ,  Srinivas V. PIETAMBARAM ,  Kristof DARMAWIKARTA ,  Jeremy D. ECTON ,  Suddhasattwa NAD ,  Hiroki TANAKA ,  Pooya TADAYON

IPC: H01L23/15 ,  H01L23/00 ,  H01L23/538

CPC classification number: H01L23/15 ,  H01L23/5381 ,  H01L23/5384 ,  H01L24/16 ,  H01L2224/16225

Abstract: Embodiments disclosed herein include interposers and methods of forming interposers. In an embodiment, an interposer comprises a substrate with a first surface and a second surface opposite from the first surface, where the substrate comprises glass. In an embodiment, the interposer further comprises a cavity into the first surface of the substrate, a via through the substrate below the cavity, a first pad in the cavity over the via, and a second pad on the second surface of the substrate under the via.

公开(公告)号：US20240063100A1

公开(公告)日：2024-02-22

申请号：US17889229

申请日：2022-08-16

Applicant: Intel Corporation

Inventor： Brandon C. MARIN ,  Mohammad Mamunur RAHMAN ,  Jeremy D. ECTON ,  Gang DUAN ,  Suddhasattwa NAD ,  Srinivas V. PIETAMBARAM ,  Kemal AYGÜN ,  Cemil GEYIK

IPC: H01L23/498

CPC classification number: H01L23/49822 ,  H01L23/49838 ,  H01L23/49811

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises a first layer, where the first layer comprises glass, a second layer over the first layer, where the second layer comprises glass, and a third layer over the second layer, where the third layer comprises glass. In an embodiment, a pair of traces are in the second layer, and a first gap is below the pair of traces, where the first gap is in the first layer and the second layer. In an embodiment, a second gap is above the pair of traces, where the second gap is in the second layer and the third layer.

公开(公告)号：US20230420357A1

公开(公告)日：2023-12-28

申请号：US17848624

申请日：2022-06-24

Applicant: Intel Corporation

Inventor： Brandon C. MARIN ,  Suddhasattwa NAD ,  Srinivas V. PIETAMBARAM ,  Gang DUAN ,  Jeremy D. ECTON ,  Kristof DARMAWIKARTA ,  Sameer PAITAL

IPC: H01L23/498 ,  H01L21/02 ,  H01L21/48

CPC classification number: H01L23/49894 ,  H01L23/49811 ,  H01L23/49822 ,  H01L23/49838 ,  H01L21/0217 ,  H01L21/486 ,  H01L24/16

Abstract: Embodiments herein relate to systems, apparatuses, or processes directed to forming an LGA pad on a side of a substrate, with a layer of silicon nitride between the LGA pad and a dielectric layer of the substrate. The LGA pad may have a reduced footprint, or a reduced lateral dimension with respect to a plane of the substrate, as compared to legacy LGA pads to reduce insertion loss by reducing the resulting capacitance between the reduced LGA footprint and metal routings within the substrate. The layer of silicon nitride may provide additional mechanical support for the reduced footprint. Other embodiments may be described and/or claimed.

公开(公告)号：US20230093008A1

公开(公告)日：2023-03-23

申请号：US17482092

申请日：2021-09-22

Applicant: Intel Corporation

Inventor： Brandon C. MARIN ,  Aleksandar ALEKSOV ,  Jeremy D. ECTON

IPC: H01L23/498 ,  H01L21/48

Abstract: Techniques for self-assembly of regions in a dielectric layer with different electrical properties are described herein. In one example, a package includes a substrate, a layer of dielectric material over the substrate, the layer of dielectric material including a filler material. The package includes a plurality of conductive traces in the layer of dielectric material, and a filler-depleted radial region of the dielectric material around each of the plurality of conductive traces. The filler-depleted radial region has a lower volume-percentage of filler than other regions of the layer of dielectric material. In one example, the conductive traces, filler, or both include a coating to cause the filler and traces to have opposing surface chemistry.

公开(公告)号：US20210305668A1

公开(公告)日：2021-09-30

申请号：US17344715

申请日：2021-06-10

Applicant: Intel Corporation

Inventor： Brandon C. MARIN ,  Jeremy D. ECTON ,  Aleksandar ALEKSOV ,  Kristof DARMAWIKARTA ,  Yonggang LI ,  Dilan SENEVIRATNE

IPC: H01P1/208 ,  H01L23/66 ,  H01P7/10 ,  H01P3/16 ,  H01L21/768 ,  H01P11/00 ,  H01L21/288 ,  H01P1/20

Abstract: A method of fabricating an RF filter on a semiconductor package comprises forming a first dielectric buildup film. A second dielectric buildup film is formed over the first dielectric buildup film, the second dielectric buildup film comprising a dielectric material that contains a metallization catalyst, wherein the dielectric material comprises one of an epoxy-polymer blend dielectric material, silicon dioxide and silicon nitride, and a low-k dielectric. A trench is formed in the second dielectric buildup film with laser ablation, wherein the laser ablation selectively activates sidewalls of the trench for electroless metal deposition. A metal selectively is plated to sidewalls of the trench based at least in part on the metallization catalyst and immersion in an electroless solution. A low-loss buildup film is formed over the metal that substantially fills the trench.

公开(公告)号：US20210125912A1

公开(公告)日：2021-04-29

申请号：US16666202

申请日：2019-10-28

Applicant: Intel Corporation

Inventor： Zhiguo QIAN ,  Gang DUAN ,  Kemal AYGÜN ,  Jieying KONG ,  Brandon C. MARIN

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/66

Abstract: Embodiments disclosed herein include electronic packages and methods of forming such packages. In an embodiment, an electronic package comprises a first buildup layer and a second buildup layer over the first buildup layer. In an embodiment, a void is disposed through the second buildup layer. In an embodiment the electronic package further comprises a first pad over the second buildup layer. In an embodiment, the first pad covers the void.

公开(公告)号：US20210066447A1

公开(公告)日：2021-03-04

申请号：US16560647

申请日：2019-09-04

Applicant: Intel Corporation

Inventor： Srinivas PIETAMBARAM ,  Brandon C. MARIN ,  Jeremy ECTON ,  Hiroki TANAKA ,  Frank TRUONG

IPC: H01L49/02 ,  H01G4/008 ,  H01G4/12 ,  H01L21/48 ,  H01G4/28

Abstract: Embodiments herein relate to a capacitor device or a manufacturing process flow for creating a capacitor that includes nanoislands within a package. The capacitor a first conductive plate having a first side and a second side opposite the first side and a second conductive plate having a first side and a second side opposite the first side where the first side of the first conductive plate faces the first side of the second conductive plate. A first plurality of nanoislands is distributed on the first side of the first conductive plate and a second plurality of nanoislands is distributed on the first side of the second conductive plate, where the first conductive plate, the second conductive plate, and the first and second pluralities of nanoislands form a capacitor. The nanoislands may be applied to the conductive plates using a sputtering technique.

公开(公告)号：US20210014972A1

公开(公告)日：2021-01-14

申请号：US16505403

申请日：2019-07-08

Applicant: Intel Corporation

Inventor： Brandon C. MARIN ,  Tarek IBRAHIM ,  Srinivas PIETAMBARAM ,  Andrew J. BROWN ,  Gang DUAN ,  Jeremy ECTON ,  Sheng C. LI

IPC: H05K1/16 ,  H01L23/00 ,  H01F27/40 ,  H05K1/11 ,  H05K3/40 ,  H05K3/28

Abstract: Embodiments include package substrates and method of forming the package substrates. A package substrate includes a first encapsulation layer over a substrate, and a second encapsulation layer below the substrate. The package substrate also includes a first interconnect and a second interconnect vertically in the first encapsulation layer, the second encapsulation layer, and the substrate. The first interconnect includes a first plated-through-hole (PTH) core, a first via, and a second via, and the second interconnect includes a second PTH core, a third via, and a fourth via. The package substrate further includes a magnetic portion that vertically surrounds the first interconnect. The first PTH core has a top surface directly coupled to the first via, and a bottom surface directly coupled to the second via. The second PTH core has a top surface directly coupled to the third via, and a bottom surface directly coupled to the fourth via.