公开(公告)号：US07897213B2

公开(公告)日：2011-03-01

申请号：US11704435

申请日：2007-02-08

申请人： Katrina Mikhaylichenko ,  Mike Ravkin ,  Fritz Redeker ,  John M. de Larios ,  Erik M. Freer ,  Mikhail Korolik

发明人： Katrina Mikhaylichenko ,  Mike Ravkin ,  Fritz Redeker ,  John M. de Larios ,  Erik M. Freer ,  Mikhail Korolik

IPC分类号： B05D5/00

CPC分类号： H01L21/02057 ,  C25D5/34 ,  C25D7/12 ,  H01L21/288 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/76841

摘要： An apparatus, system and method for preparing a surface of a substrate using a proximity head includes applying a non-Newtonian fluid between the surface of the substrate and a head surface of the proximity head. The non-Newtonian fluid defines a containment wall along one or more sides between the head surface and the surface of the substrate. The one or more sides provided with the non-Newtonian fluid define a treatment region on the substrate between the head surface and the surface of the substrate. A Newtonian fluid is applied to the surface of the substrate through the proximity head, such that the applied Newtonian fluid is substantially contained in the treatment region defined by the containment wall. The contained Newtonian fluid aids in the removal of one or more contaminants from the surface of the substrate. In one example, the non-Newtonian fluid can also be used to create ambient controlled isolated regions, which can assist in controlled processing of surfaces within the regions. In an alternate example, a second non-Newtonian fluid is applied to the treatment region instead of the Newtonian fluid. The second non-Newtonian fluid acts on one or more contaminants on the surface of the substrate substantially removing them from the surface of the substrate.

摘要翻译： 使用接近头来制备基底的表面的装置，系统和方法包括在基底的表面和邻近头的头表面之间施加非牛顿流体。 非牛顿流体在头表面和基底表面之间沿着一个或多个侧面限定了容纳壁。 设置有非牛顿流体的一个或多个侧面限定了头表面和基底表面之间的基底上的处理区域。 通过邻近头将牛顿流体施加到基底的表面，使得所施加的牛顿流体基本上包含在由容纳壁限定的处理区域中。 所含的牛顿流体有助于从基底表面去除一种或多种污染物。 在一个示例中，非牛顿流体也可以用于创建环境控制的隔离区域，这可以有助于区域内的表面的受控处理。 在替代示例中，将第二非牛顿流体施加到处理区域而不是牛顿流体。 第二非牛顿流体作用于衬底表面上的一种或多种污染物，基本上将其从衬底的表面上除去。

公开(公告)号：US20100044867A1

公开(公告)日：2010-02-25

申请号：US12613518

申请日：2009-11-05

申请人： John Boyd ,  Fritz Redeker ,  Yezdi Dordi ,  Hyungsuk Alexander Yoon ,  Shijian Li

发明人： John Boyd ,  Fritz Redeker ,  Yezdi Dordi ,  Hyungsuk Alexander Yoon ,  Shijian Li

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/48 ,  H01L21/4763 ,  H01L21/76898 ,  H01L2924/14

摘要： Presented are methods of fabricating three-dimensional integrated circuits that include post-contact back end of line through-hole via integration for the three-dimensional integrated circuits. Another aspect of the present invention includes three-dimensional integrated circuits fabricated according to methods of the present invention.

摘要翻译： 提出了制造三维集成电路的方法，其包括用于三维集成电路的集成的线路通孔的后接触后端。 本发明的另一方面包括根据本发明的方法制造的三维集成电路。

公开(公告)号：US07534307B2

公开(公告)日：2009-05-19

申请号：US12129679

申请日：2008-05-30

申请人： Michael Ravkin ,  Michael G. R. Smith ,  John M. de Larios ,  Fritz Redeker ,  Mikhail Korolik ,  Christian DiPietro

发明人： Michael Ravkin ,  Michael G. R. Smith ,  John M. de Larios ,  Fritz Redeker ,  Mikhail Korolik ,  Christian DiPietro

IPC分类号： B08B5/04 ,  B08B3/04

CPC分类号： H01L21/67051 ,  C25D5/08 ,  C25D17/00 ,  C25D17/001 ,  H01L21/67023 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67063 ,  Y10S134/902

摘要： Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.

摘要翻译： 在许多实施例中，在一个实施例中，公开了一种用于处理衬底的方法，其包括在衬底的表面上产生流体层，流体层限定流体弯液面。 该产生包括将头部移动到靠近表面的位置，将流体从头部施加到表面，同时头部靠近基底的表面以限定流体层，并且通过邻近头部从表面移除流体 通过真空。 流体沿着头部和基底之间的流体层以随着头部更接近表面而增加的速度行进。

公开(公告)号：US20090078282A1

公开(公告)日：2009-03-26

申请号：US12240300

申请日：2008-09-29

申请人： John M. de Larios ,  Mike Ravkin ,  Jeffrey Farber ,  Mikhail Korolik ,  Fritz Redeker ,  Aleksander Owczarz

发明人： John M. de Larios ,  Mike Ravkin ,  Jeffrey Farber ,  Mikhail Korolik ,  Fritz Redeker ,  Aleksander Owczarz

IPC分类号： B08B1/00

CPC分类号： B08B3/003 ,  H01L21/67028 ,  H01L21/67046 ,  Y10S134/902

摘要： An apparatus and method are disclosed in which a semiconductor substrate having a surface containing contaminants is cleaned or otherwise subjected to chemical treatment using a foam. The semiconductor wafer is supported either on a stiff support (or a layer of foam) and foam is provided on the opposite surface of the semiconductor wafer while the semiconductor wafer is supported. The foam contacting the semiconductor wafer is pressurized using a form to produce a jammed foam. Relative movement between the form and the semiconductor wafer. such as oscillation parallel and/or perpendicular to the top surface of the semiconductor wafer. is then induced while the jammed foam is in contact with the semiconductor wafer to remove the undesired contaminants and/or otherwise chemically treat the surface of the semiconductor wafer using the foam.

摘要翻译： 公开了一种装置和方法，其中具有含有污染物的表面的半导体衬底被清洁或以其它方式用泡沫进行化学处理。 半导体晶片被支撑在刚性支撑件（或泡沫层）上，并且在半导体晶片被支撑的同时在半导体晶片的相对表面上提供泡沫。 接触半导体晶片的泡沫使用形式加压以产生卡住的泡沫。 形式与半导体晶圆之间的相对移动。 例如平行于和/或垂直于半导体晶片的顶表面的振荡。 然后在卡住的泡沫与半导体晶片接触的同时引发，以除去不期望的污染物和/或以其它方式化学处理使用泡沫的半导体晶片的表面。

公开(公告)号：US20090000044A1

公开(公告)日：2009-01-01

申请号：US12210198

申请日：2008-09-14

申请人： John M. de Larios ,  Aleksander Owczarz ,  Alan Schoepp ,  Fritz Redeker

发明人： John M. de Larios ,  Aleksander Owczarz ,  Alan Schoepp ,  Fritz Redeker

IPC分类号： B08B3/08 ,  B08B1/02 ,  B08B1/04

CPC分类号： B08B3/003 ,  H01L21/67028 ,  H01L21/67046 ,  Y10S134/902

摘要： An apparatus for use in processing a substrate includes a brush enclosure extending over a length. The brush enclosure is configured to be disposed over a surface of the substrate and has an open region that is configured to be disposed in proximity to the substrate. The open region extends over the length of the brush enclosure and enables foam from within the brush enclosure to contact the surface of the substrate. A substrate cleaning system and method for cleaning a substrate are also described.

摘要翻译： 用于处理衬底的装置包括在一定长度上延伸的刷子外壳。 电刷外壳被配置为设置在基板的表面上方，并且具有被配置为设置在基板附近的开放区域。 开放区域在刷子外壳的长度上延伸，并使来自刷子外壳内的泡沫能够接触基板的表面。 还描述了用于清洁衬底的衬底清洁系统和方法。

公开(公告)号：US07441299B2

公开(公告)日：2008-10-28

申请号：US10816337

申请日：2004-03-31

申请人： John M. de Larios ,  Aleksander Owczarz ,  Alan Schoepp ,  Fritz Redeker

发明人： John M. de Larios ,  Aleksander Owczarz ,  Alan Schoepp ,  Fritz Redeker

IPC分类号： B08B11/02

CPC分类号： B08B3/003 ,  H01L21/67028 ,  H01L21/67046 ,  Y10S134/902

摘要： An apparatus for use in processing a substrate includes a brush enclosure extending over a length. The brush enclosure is configured to be disposed over a surface of the substrate and has an open region that is configured to be disposed in proximity to the substrate. The open region extends over the length of the brush enclosure and enables foam from within the brush enclosure to contact the surface of the substrate. A substrate cleaning system and method for cleaning a substrate are also described.

摘要翻译： 用于处理衬底的装置包括在一定长度上延伸的刷子外壳。 电刷外壳被配置为设置在基板的表面上，并且具有被配置为设置在基板附近的开放区域。 开放区域在刷子外壳的长度上延伸，并使来自刷子外壳内的泡沫能够接触基板的表面。 还描述了用于清洁衬底的衬底清洁系统和方法。

公开(公告)号：US20080146025A1

公开(公告)日：2008-06-19

申请号：US11641364

申请日：2006-12-18

申请人： Yezdi Dordi ,  John Boyd ,  Fritz Redeker ,  William Thie ,  Tiruchirapalli Arunagiri ,  Alex Yoon

发明人： Yezdi Dordi ,  John Boyd ,  Fritz Redeker ,  William Thie ,  Tiruchirapalli Arunagiri ,  Alex Yoon

IPC分类号： H01L21/4763 ,  C25D3/38

CPC分类号： C23C8/02 ,  C23C8/80 ,  C23C10/02 ,  C23C10/60 ,  C23C16/54 ,  C23C16/56 ,  C23C18/1601 ,  C23C18/1632 ,  C23C18/54 ,  C23C26/00 ,  C23C28/023 ,  C23C28/322 ,  C23C28/34 ,  C25D7/123 ,  C25D17/001 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/76855 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873

摘要： This invention pertains to methods and systems for fabricating semiconductor devices. One aspect of the present invention is a method of depositing a gapfill copper layer onto barrier layer for semiconductor device metallization. In one embodiment, the method includes forming the barrier layer on a surface of a substrate and subjecting the barrier layer to a process condition so as to form a removable passivated surface on the barrier layer. The method further includes removing the passivated surface from the barrier layer and depositing the gapfill copper layer onto the barrier layer. Another aspect of the present invention is an integrated system for depositing a copper layer onto a barrier layer for semiconductor device metallization. In one embodiment, the integrated system comprises at least one process module configured for barrier layer deposition and passivated surface formation and at least one other process module configured for passivated surface removal and deposition of copper onto the barrier layer. The system further includes at least one transfer module coupled so that the substrate can be transferred between the modules substantially without exposure to an oxide-forming environment.

摘要翻译： 本发明涉及用于制造半导体器件的方法和系统。 本发明的一个方面是在用于半导体器件金属化的阻挡层上沉积间隙填充铜层的方法。 在一个实施例中，该方法包括在衬底的表面上形成阻挡层，并使阻挡层经受处理条件，以便在阻挡层上形成可移除的钝化表面。 该方法还包括从阻挡层去除钝化表面并将间隙填充铜层沉积到阻挡层上。 本发明的另一方面是用于在用于半导体器件金属化的阻挡层上沉积铜层的集成系统。 在一个实施例中，集成系统包括被配置用于阻挡层沉积和钝化表面形成的至少一个工艺模块和被配置用于钝化表面去除和沉积到阻挡层上的至少一个其它工艺模块。 所述系统还包括至少一个传送模块，所述至少一个传送模块被耦合，使得所述基板可以在所述模块之间基本上不被暴露于氧化物形成环境中。

公开(公告)号：US20070264436A1

公开(公告)日：2007-11-15

申请号：US11611736

申请日：2006-12-15

申请人： Yezdi Dordi ,  William Thie ,  John Boyd ,  Fritz Redeker

发明人： Yezdi Dordi ,  William Thie ,  John Boyd ,  Fritz Redeker

IPC分类号： B05D1/18 ,  B05C13/02

CPC分类号： H01L21/02074 ,  C23C18/1628 ,  C23C18/38 ,  C23C18/50 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76883 ,  Y10S134/902

摘要： An electroless plating chamber is provided. The electroless plating chamber includes a chuck configured to support a substrate and a bowl surrounding a base and a sidewall of the chuck. The base has an annular channel defined along an inner diameter of the base. The chamber includes a drain connected to the annular channel. The drain is capable of removing fluid collected from the chuck. A proximity head capable of cleaning and substantially drying the substrate is included in the chamber. A method for performing an electroless plating operation is also provided.

摘要翻译： 提供无电镀室。 化学镀室包括配置成支撑基板的卡盘和围绕卡盘的基部和侧壁的碗。 底座具有沿着底座的内径限定的环形通道。 该腔室包括连接到环形通道的排水口。 排水口能够去除从卡盘收集的流体。 能够清洁和基本上干燥基板的接近头包括在腔室中。 还提供了一种执行化学镀操作的方法。

公开(公告)号：US20070087950A1

公开(公告)日：2007-04-19

申请号：US11519354

申请日：2006-09-11

申请人： Mikhail Korolik ,  Erik Freer ,  John de Larios ,  Katrina Mikhaylichenko ,  Mike Ravkin ,  Fritz Redeker

发明人： Mikhail Korolik ,  Erik Freer ,  John de Larios ,  Katrina Mikhaylichenko ,  Mike Ravkin ,  Fritz Redeker

IPC分类号： B08B3/00 ,  B08B7/00 ,  C11D7/32

CPC分类号： C11D11/0047 ,  B08B7/02 ,  C11D1/146 ,  C11D3/2079 ,  C11D9/02 ,  C11D17/0013 ,  C11D17/0017 ,  C23G1/18 ,  G03F7/423 ,  H01L21/02052 ,  H01L21/31133 ,  H01L21/6708 ,  H01L21/67086

摘要： Cleaning compounds, apparatus, and methods to remove contaminants from a substrate surface are provided. An exemplary cleaning compound to remove particulate contaminants from a semiconductor substrate surface is provided. The cleaning compound includes a viscous liquid with a viscosity between about 1 cP to about 10,000 cP. The cleaning compound also includes a plurality of solid components dispersed in the viscous liquid, the plurality of solid components interact with the particulate contaminants on the substrate surface to remove the particulate contaminants from the substrate surface.

摘要翻译： 提供了清除化合物，设备和从基材表面除去污染物的方法。 提供了从半导体衬底表面去除颗粒污染物的示例性清洁化合物。 清洁化合物包括粘度在约1cP至约10,000cP之间的粘性液体。 清洁化合物还包括分散在粘性液体中的多个固体组分，多个固体组分与基底表面上的颗粒污染物相互作用以从基底表面去除颗粒污染物。

公开(公告)号：US20060269877A1

公开(公告)日：2006-11-30

申请号：US11204907

申请日：2005-08-15

申请人： John Boyd ,  Fritz Redeker ,  David Hemker

发明人： John Boyd ,  Fritz Redeker ,  David Hemker

IPC分类号： B08B3/00 ,  G03C5/00

CPC分类号： G03F7/30 ,  B08B3/04 ,  G03F7/3092 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  Y10S134/902

摘要： A first proximity head is configured to define a meniscus of a photoresist developer solution on a substrate. The meniscus is to be defined between a bottom of the first proximity head and the substrate. A second proximity head is configured to define a rinsing meniscus on the substrate and remove the rinsing meniscus from the substrate. The second proximity head is positioned to follow the first proximity head relative to a traversal direction of the first and second proximity heads over the substrate. Exposure of the substrate to the meniscus of photoresist developer solution causes previously irradiated photoresist material on the substrate to be developed to render a patterned photoresist layer. The first and second proximity heads enable precise control of a residence time of the photoresist developer solution on the substrate during the development process.