公开(公告)号：US20130210221A1

公开(公告)日：2013-08-15

申请号：US13765733

申请日：2013-02-13

申请人： YI-CHIAU HUANG ,  Jiping Li ,  Miao Jin ,  Bingxi Sun Wood ,  Errol Antonio C. Sanchez ,  Yihwan Kim

发明人： YI-CHIAU HUANG ,  Jiping Li ,  Miao Jin ,  Bingxi Sun Wood ,  Errol Antonio C. Sanchez ,  Yihwan Kim

IPC分类号： H01L21/02

CPC分类号： H01L21/02694 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02647 ,  H01L21/02675

摘要： Methods and apparatus for forming a germanium containing film on a patterned substrate are described. The patterned substrate is a silicon, or silicon containing material, and may have a mask material formed on a surface thereof. The germanium containing material is formed selectively on exposed silicon in the recesses of the substrate, and an overburden of at least 50% is formed on the substrate. The germanium containing layer is thermally treated using pulsed laser radiation, which melts a portion of the overburden, but does not melt the germanium containing material in the recesses. The germanium containing material in the recesses is typically annealed, at least in part, by the thermal treatment. The overburden is then removed.

摘要翻译： 描述了在图案化衬底上形成含锗膜的方法和装置。 图案化衬底是硅或含硅材料，并且可以在其表面上形成掩模材料。 含锗材料在衬底的凹槽中的暴露的硅上选择性地形成，并且在衬底上形成至少50％的覆盖层。 使用脉冲激光辐射对含锗层进行热处理，所述脉冲激光辐射熔化上覆层的一部分，但不熔化凹陷中的含锗材料。 凹陷中的含锗材料通常通过热处理至少部分退火。 然后卸下覆盖层。

公开(公告)号：US20120325784A1

公开(公告)日：2012-12-27

申请号：US13194552

申请日：2011-07-29

申请人： Stephen Moffatt ,  Douglas E. Holmgren ,  Samuel C. Howells ,  Edric Tong ,  Bruce E. Adams ,  Jiping Li ,  Aaron Muir Hunter

发明人： Stephen Moffatt ,  Douglas E. Holmgren ,  Samuel C. Howells ,  Edric Tong ,  Bruce E. Adams ,  Jiping Li ,  Aaron Muir Hunter

IPC分类号： B23K26/00

CPC分类号： H01L21/477 ,  B23K26/0006 ,  B23K26/03 ,  B23K26/032 ,  B23K26/04 ,  B23K26/0608 ,  B23K26/0622 ,  B23K26/08 ,  B23K26/127 ,  B23K26/354 ,  B23K2101/40 ,  B23K2103/56 ,  F27B5/14 ,  H01L21/268 ,  H01S3/0057

摘要： The present invention generally relates to an optical system that is able to reliably deliver a uniform amount of energy across an anneal region contained on a surface of a substrate. The optical system is adapted to deliver, or project, a uniform amount of energy having a desired two-dimensional shape on a desired region on the surface of the substrate. An energy source for the optical system is typically a plurality of lasers, which are combined to form the energy field.

公开(公告)号：US08232503B2

公开(公告)日：2012-07-31

申请号：US12886809

申请日：2010-09-21

申请人： Jiping Li ,  Bruce E. Adams ,  Timothy N. Thomas ,  Aaron Muir Hunter ,  Abhilash J. Mayur ,  Rajesh S. Ramanujam

发明人： Jiping Li ,  Bruce E. Adams ,  Timothy N. Thomas ,  Aaron Muir Hunter ,  Abhilash J. Mayur ,  Rajesh S. Ramanujam

IPC分类号： B23K26/08

CPC分类号： B23K26/0665 ,  B23K26/03 ,  B23K26/032 ,  B23K26/034 ,  B23K26/18 ,  B23K2101/40

摘要： In a laser annealing system for workpieces such as semiconductor wafers, a pyrometer wavelength response band is established within a narrow window lying between the laser emission band and a fluorescence emission band from the optical components of the laser system, the pyrometer response band lying in a wavelength region at which the optical absorber layer on the workpiece has an optical absorption coefficient as great as or greater than the underlying workpiece. A multi-layer razor-edge interference filter having a 5-8 nm wavelength cut-off edge transition provides the cut-off of the laser emission at the bottom end of the pyrometer response band.

摘要翻译： 在用于诸如半导体晶片的工件的激光退火系统中，在位于激光发射带和来自激光系统的光学部件的荧光发射带之间的狭窄窗口内建立高温计波长响应带，高温计响应带位于 工件上的光吸收层的光吸收系数大于或大于下面工件的波长区域。 具有5-8nm波长截止边缘跃迁的多层剃刀边缘干涉滤光器提供在高温计响应带的底端处的激光发射的截止。

公开(公告)号：US20120171853A1

公开(公告)日：2012-07-05

申请号：US13418069

申请日：2012-03-12

申请人： Jiping Li ,  Aaron Muir Hunter ,  Bruce E. Adams ,  Theodore Moffitt ,  Stephen Moffatt

发明人： Jiping Li ,  Aaron Muir Hunter ,  Bruce E. Adams ,  Theodore Moffitt ,  Stephen Moffatt

IPC分类号： H01L21/268

CPC分类号： H01L21/26513 ,  H01L21/26566 ,  H01L21/2658

摘要： A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then annealed to completely dissociate and activate the boron clusters. The annealing may take place by melting the implanted regions or by a sub-melt annealing process.

摘要翻译： 一种用硼簇植入半导体衬底的方法和装置。 通过等离子体浸渍或离子束注入，注入十八硼烷衬底。 然后将衬底表面退火以完全解离并激活硼簇。 退火可以通过熔化注入区域或通过亚熔融退火工艺进行。

公开(公告)号：US20120148701A1

公开(公告)日：2012-06-14

申请号：US13401553

申请日：2012-02-21

申请人： Bruce E. Adams ,  Samuel C. Howells ,  Dean Jennings ,  Jiping Li ,  Timothy N. Thomas ,  Stephen Moffatt

发明人： Bruce E. Adams ,  Samuel C. Howells ,  Dean Jennings ,  Jiping Li ,  Timothy N. Thomas ,  Stephen Moffatt

IPC分类号： B29C35/08

CPC分类号： B23K26/073 ,  B23K26/0613 ,  B23K26/0622 ,  B23K26/067 ,  B23K26/0732 ,  B23K2103/56 ,  G02B27/0961

摘要： The present invention generally relates to an optical system that is able to reliably deliver a uniform amount of energy across an anneal region contained on a surface of a substrate. The optical system is adapted to deliver, or project, a uniform amount of energy having a desired two-dimensional shape on a desired region on the surface of the substrate. Typically, the anneal regions may be square or rectangular in shape. Generally, the optical system and methods of the present invention are used to preferentially anneal one or more regions found within the anneal regions by delivering enough energy to cause the one or more regions to re-melt and solidify.

摘要翻译： 本发明一般涉及一种光学系统，其能够在包含在基板的表面上的退火区域上可靠地传递均匀的能量。 光学系统适于在衬底的表面上的期望区域上传送或投影具有期望的二维形状的均匀量的能量。 通常，退火区域可以是正方形或矩形形状。 通常，本发明的光学系统和方法用于通过递送足够的能量以使一个或多个区域再熔化和固化来优先退火在退火区域内发现的一个或多个区域。

公开(公告)号：US07379185B2

公开(公告)日：2008-05-27

申请号：US10979397

申请日：2004-11-01

申请人： Peter G. Borden ,  Jiping Li ,  Edgar Genio

发明人： Peter G. Borden ,  Jiping Li ,  Edgar Genio

IPC分类号： G01N21/55

CPC分类号： G01N21/171 ,  G01N21/95684 ,  G01N21/95692 ,  H01L22/20

摘要： A patterned dielectric layer is evaluated by measuring reflectance of a region which has openings. A heating beam may be chosen for having reflectance from an underlying conductive layer that is several times greater than absorptance, to provide a heightened sensitivity to presence of residue and/or changes in dimension of the openings. Reflectance may be measured by illuminating the region with a heating beam modulated at a preset frequency, and measuring power of a probe beam that reflects from the region at the preset frequency. Openings of many embodiments have sub-wavelength dimensions (i.e. smaller than the wavelength of the heating beam). The underlying conductive layer may be patterned into links of length smaller than the diameter of heating beam, so that the links float to a temperature higher than a corresponding temperature attained by a continuous trace that transfers heat away from the illuminated region by conduction.

摘要翻译： 通过测量具有开口的区域的反射率来评估图案化的介电层。 加热束可以被选择为具有比吸收率大几倍的下层导电层的反射率，以提供对残留物的存在和/或开口尺寸变化的更高的灵敏度。 反射率可以通过以预设频率调制的加热光束照射该区域并测量从预设频率的区域反射的探测光束的功率来测量。 许多实施例的开口具有亚波长尺寸（即小于加热束的波长）。 底层导电层可以被图案化成长度小于加热束直径的链节，使得链节浮动到高于通过传导将热量从照射区域传递的连续迹线获得的相应温度的温度。

公开(公告)号：US06940592B2

公开(公告)日：2005-09-06

申请号：US09974571

申请日：2001-10-09

申请人： Peter G. Borden ,  Jiping Li ,  Jon Madsen

发明人： Peter G. Borden ,  Jiping Li ,  Jon Madsen

IPC分类号： G01N21/27 ,  G01N21/55 ,  G01N21/95 ,  G01J3/28 ,  G01B11/28 ,  G01N21/00 ,  G01N21/86

CPC分类号： G01N21/9501 ,  G01N21/274 ,  G01N21/55 ,  G01N21/95607

摘要： Two more measurements are made on the same workpiece, during fabrication. Each measurement may be made employing a different process. The measurements are used together to determine a property of the workpiece. For example, multiple measurements from a first process are used with a predetermined value of the property of interest in a simulator to generate a simulated value of a signal to be measured in a second process. One or more such simulated values and a measured value are used to identify a value of the property of interest. When the workpiece's property is found to not match the specification, a process control parameter used in the workpiece's fabrication is adjusted, thereby to implement process control.

摘要翻译： 在制造过程中，在同一工件上进行两次测量。 可以使用不同的处理来进行每个测量。 这些测量结果一起用于确定工件的特性。 例如，来自第一处理的多个测量与模拟器中感兴趣的属性的预定值一起使用，以在第二过程中产生要测量的信号的模拟值。 使用一个或多个这样的模拟值和测量值来识别感兴趣的属性的值。 当发现工件的特性不符合规范时，调整工件制造中使用的过程控制参数，从而实现过程控制。

公开(公告)号：US06489801B1

公开(公告)日：2002-12-03

申请号：US09544280

申请日：2000-04-06

申请人： Peter G. Borden ,  Regina G. Nijmeijer ,  Jiping Li

发明人： Peter G. Borden ,  Regina G. Nijmeijer ,  Jiping Li

IPC分类号： G01R3126

CPC分类号： G01N21/1717 ,  G01R31/2648 ,  G01R31/2656 ,  G01R31/311 ,  H01L22/12

摘要： An apparatus and method uses diffusive modulation (without generating a wave of carriers) for measuring a material property (such as any one or more of: mobility, doping, and lifetime) that is used in evaluating a semiconductor wafer. The measurements are carried out in a small area, for use on wafers having patterns for integrated circuit dice. The measurements are based on measurement of reflectance, for example as a function of carrier concentration. In one implementation, the semiconductor wafer is illuminated with two beams, one with photon energy above the bandgap energy of the semiconductor, and another with photon energy near or below the bandgap. The diameters of the two beams relative to one another are varied to extract additional information about the semiconductor material, for use in measuring, e.g. lifetime.

摘要翻译： 一种装置和方法使用扩散调制（不产生载波）来测量用于评估半导体晶片的材料性质（例如，迁移率，掺杂和寿命中的任何一个或多个）。 测量在小面积上进行，用于具有用于集成电路芯片的图案的晶片。 测量是基于反射率的测量，例如作为载流子浓度的函数。 在一个实施方案中，用两个光束照射半导体晶片，一个光子能量高于半导体的带隙能量，另一个具有接近或低于带隙的光子能量。 改变两个光束相对于彼此的直径以提取关于半导体材料的附加信息，以用于测量例如半导体材料。 一生。

公开(公告)号：US08970963B2

公开(公告)日：2015-03-03

申请号：US13715804

申请日：2012-12-14

申请人： Stephen Moffatt ,  Douglas E. Holmgren ,  Samuel C. Howells ,  Edric Tong ,  Bruce E. Adams ,  Jiping Li ,  Aaron Muir Hunter

发明人： Stephen Moffatt ,  Douglas E. Holmgren ,  Samuel C. Howells ,  Edric Tong ,  Bruce E. Adams ,  Jiping Li ,  Aaron Muir Hunter

IPC分类号： G02B27/12 ,  G02B27/10 ,  G02B27/14 ,  G02B17/08

CPC分类号： G02B27/106 ,  G02B17/0888 ,  G02B27/0025 ,  G02B27/10 ,  G02B27/1006 ,  G02B27/12 ,  G02B27/123 ,  G02B27/126 ,  G02B27/14 ,  G02B27/143 ,  G02B27/30

摘要： Apparatus and methods for combining beams of amplified radiation are disclosed. A beam combiner has a collimating optic positioned to receive a plurality of coherent radiation beams at a constant angle of incidence with respect to an optical axis of the collimating optic. The respective angles of incidence may also be different in some embodiments. The collimating optic has an optical property that collimates the beams. The optical property may be refractive or reflective, or a combination thereof. A collecting optic may also be provided to direct the plurality of beams to the collimating optic. The beam combiner may be used in a thermal processing apparatus to combine more than two beams of coherent amplified radiation, such as lasers, into a single beam.

摘要翻译： 公开了用于组合放大辐射束的装置和方法。 光束组合器具有准直光学器件，其被定位成以相对于准直光学器件的光轴的恒定入射角接收多个相干辐射束。 在一些实施例中，相应的入射角也可以不同。 准直光学元件具有使光束准直的光学特性。 光学性质可以是折射或反射的，或其组合。 还可以提供收集光学器件以将多个光束引导到准直光学元件。 光束组合器可以用在热处理装置中，以将多于两个的相干放大辐射束（例如激光器）组合成单个光束。

公开(公告)号：US08674257B2

公开(公告)日：2014-03-18

申请号：US12029403

申请日：2008-02-11

申请人： Jiping Li

发明人： Jiping Li

IPC分类号： B23K26/00

CPC分类号： B23K26/046 ,  B23K26/03 ,  B23K26/032 ,  B23K26/034 ,  B23K26/0613 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/123 ,  G01J5/0003 ,  G01J5/0007 ,  G01J5/02 ,  G01J5/029 ,  G01J5/04 ,  G01J5/061 ,  G01J5/08 ,  G01J5/0803 ,  G01J5/0806 ,  G01J5/0821 ,  G01J5/0846 ,  G01J5/0896

摘要： An apparatus for thermally processing a substrate includes a first radiation source configured to heat a substrate and emit radiation at a heating wavelength, focusing optics configured to direct radiation from the first radiation source to the substrate, and a second radiation source configured to emit radiation at a second wavelength different from the heating wavelength and at a lower power than the first radiation source. Radiation from the second radiation source is directed onto the substrate. The apparatus further includes a first detector configured to receive reflected radiation at the second wavelength and a computer system configured to receive an output from the first detector and adjust a focus plane of the first radiation source relative to the substrate. The second radiation source is configured to have substantially the same focus plane as the first radiation source.

摘要翻译： 一种用于热处理衬底的装置包括：第一辐射源，被配置为加热衬底并以加热波长发射辐射，聚焦光学器件被配置为将辐射从第一辐射源引导到衬底;以及第二辐射源，被配置为发射辐射， 与加热波长不同的第二波长和比第一辐射源低的功率。 来自第二辐射源的辐射被引导到基底上。 该装置还包括：第一检测器，被配置为接收第二波长的反射辐射;以及计算机系统，被配置为接收来自第一检测器的输出并调节第一辐射源相对于基板的聚焦平面。 第二辐射源被配置为具有与第一辐射源基本相同的聚焦平面。